# Bipolar (BJT) Single Transistor, NPN, 60 V, 1 A, 350 mW, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:1251226/)

**URL**: https://novapart.co/products/ZXTN2038F/bipolar-bjt-single-transistor-npn-60-v-1-a-350-mw
**SKU**: ZXTN2038F
**Manufacturer**: DIODES INC.
**Price**: €0.1170
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:150MHz; Power Dissipation Pd:350mW; DC Collector Current:1A; DC Current Gain hFE:100hFE; Transistor Case S

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 350mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 150MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 100hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 1A |
| Collector Emitter Voltage Max | 60V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1251226/)

**A Product Line of Diodes Incorporated** 

## **ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor** 

## **Summary** 

V > 80V (BR)CEV V > 60V (BR)CEO I = 1A c(cont) Vce(sat) <  500mV @ 1A 

## **Complementary type** 

ZXTP2039F 

## **Description** 

This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching. 

## **Features** 

- Low saturation voltage for reduced power dissipation 

- 1 to 2 amp high current capability 

- Pb-free 

- SOT23 package 

## **Applications** 

- Power MOSFET gate driving 

- Low loss power switching 

## **Ordering information** 

|**Device**|**Reel size**|**Tape width**|**Quantity per reel**|
|---|---|---|---|
|ZXTN2038FTA|7”|8mm|3,000|
|ZXTN2038FTC|13”|8mm|10,000|



## **Device marking** 

N38 

**Issue 4 - January 2009** © Diodes Incorporated, 2008 

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**www.zetex.com www.diodes.com** 

## **ZXTN2038F** 

## **Absolute maximum ratings** 

|**Parameter**|**Symbol**|**Limit**|**Unit**|
|---|---|---|---|
|Collector-base voltage|VCBO|80|V|
|Collector-emitter voltage|VCEV|80|V|
|Collector-emitter voltage|VCEO|60|V|
|Emitter-base voltage|VEBO|5.0|V|
|Peak pulse current|ICM|2|A|
|Continuous collector current(*)|IC|1|A|
|Peak base current|IBM|1|A|
|Power dissipation @ TA=25°C(*)|PD|350|mW|
|Operating and storage temperature|Tj:Tstg|55 to +150|°C|



## **NOTES:** 

(*) For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 

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**ZXTN2038F** 

## **Electrical characteristics (@TAMB = 25°C)** 

|**Parameter**|**Symbol**|**Min.**|**Max.**|**Unit**|**Conditions**|
|---|---|---|---|---|---|
|Collector-base breakdown<br>voltage|V(BR)CBO|80||V|IC=100�A|
|Collector-emitter breakdown<br>voltage|V(BR)CEV|80||V|IC=100�A,<br>0.3V > VBE> -1V|
|Collector-emitter breakdown<br>voltage|V(BR)CEO|60||V|IC=10mA(*)|
|Emitter-base breakdown voltage|V(BR)EBO|5||V|IE=100�A|
|Collector-emitter cut-off current|ICES||100|nA|VCE=60V|
|Collector-base cut-off current|ICBO||100|nA|VCB=60V|
|Emitter-base cut-off current|IEBO||100|nA|VEB=4V|
|Static forward current transfer<br>ratio|hFE|100<br>100<br>80<br>30|300||IC=1mA, VCE=5V<br>IC=500mA,  VCE=5V(*)<br>IC=1A,  VCE=5V(*)<br>IC=2A,  VCE=5V(*)|
|Collector-emitter saturation<br>voltage|VCE(sat)||0.2<br>0.25<br>0.5|V<br>V<br>V|IC=100mA, IB=2mA(*)<br>IC=500mA,<br>IB=50mA(*)<br>IC=1A, IB=100mA(*)|
|Base-emitter saturation voltage|VBE(sat)||1.1|V|IC=1A, IB=100mA(*)|
|Base-emitter turn-on voltage|VBE(on)||1.0|V|IC=1A, VCE=5V(*)|
|Transition frequency|fT|150|||IC=50mA, VCE=10V<br>f=100MHz|
|Output capacitance|Cobo||10|pF|VCB=10V, f=1MHz|



## **NOTES:** 

(*) Measured under pulsed conditions. Pulse width=300�S. Duty cycle �2% Spice parameter data is available upon request for this device 

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**ZXTN2038F** 

## **Typical characteristics** 

**==> picture [434 x 576] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.6 0.6<br>+25 ° C IC/IB=10<br>0.5 0.5<br>0.4 0.4<br>0.3 0.3<br>IC/IB=10 -55 °C<br>+25 °C<br>IC/IB=50 +100 °C<br>0.2 0.2<br>0.1 0.1<br>0 0<br>1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A<br>IC-Collector Current IC-Collector Current<br>VCE(sat) v IC VCE(sat) v IC<br>400 VCE=5V IC/IB=10<br>1.0<br>300 +100 °C<br>0.8<br>200 +25 °C 0.6<br>-55 °C<br>+25 °C<br>0.4 +100 °C<br>100 -55 °C<br>0.2<br>0 0<br>1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A<br>IC-Collector Current IC-Collector Current<br>hFE V IC VBE(sat) v IC<br>1.2 10<br>VCE=5V<br>1.0<br>0.8 1<br>0.6<br>DC<br>1s<br>-55 °C 100ms<br>0.4 +25 °C 0.1 10ms<br>+100 °C 1ms<br>100us<br>0.2<br>0 0.01<br>1mA 10mA 100mA 1A 10A 0.1V 1V 10V 100V<br>IC-Collector Current VCE - Collector Emitter Voltage (V)<br>VBE(on) v IC Safe Operating Area<br>-(V) -(V)<br>CE(sat) CE(sat)<br>V V<br> - (V)<br>- Typical Gain BE(sat)<br> FE  V<br>h<br> - (V)<br>BE(on)<br>V<br>-Collector Current (A)<br>IC<br>**----- End of picture text -----**<br>


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## **ZXTN2038F** 

## **Packaging details - SOT23** 

**==> picture [295 x 229] intentionally omitted <==**

**----- Start of picture text -----**<br>
E<br>e<br>b e1<br>3 leads<br>D<br>L1 E1<br>A<br>A1 L c<br>**----- End of picture text -----**<br>


## **Package dimensions** 

|**Dim.**|**Millimeters**|**Millimeters**|**Inches**|**Inches**|**Dim.**|**Millimeters**|**Millimeters**|**Inches**|**Inches**|
|---|---|---|---|---|---|---|---|---|---|
||**Min.**|**Max.**|**Min.**|**Max.**||**Min.**|**Max.**|**Min.**|**Max.**|
|A|-|1.12|-|0.044|e1|1.90 NOM||0.075 NOM||
|A1|0.01|0.10|0.0004|0.004|E|2.10|2.64|0.083|0.104|
|b|0.30|0.50|0.012|0.020|E1|1.20|1.40|0.047|0.055|
|c|0.085|0.20|0.003|0.008|L|0.25|0.60|0.0098|0.0236|
|D|2.80|3.04|0.110|0.120|L1|0.45|0.62|0.018|0.024|
|e|0.95 NOM||0.037 NOM||-|-|-|-|-|



**Note:** Controlling dimensions are in millimeters. Approximate dimensions are provided in inches 

**Issue 4 - January 2009** © Diodes Incorporated, 2008 

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**ZXTN2038F** 

## **Definitions** 

## **Product change** 

Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. 

## **Applications disclaimer** 

The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Diodes Inc. with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Diodes Inc. does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. 

## **Life support** 

Diodes Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A. Life support devices or systems are devices or systems which: 

1. are intended to implant into the body 

or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

## **Reproduction** 

The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. 

## **Terms and Conditions** 

All products are sold subjects to Diodes Inc. terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Diodes Zetex sales office. 

## **Quality of product** 

Diodes Zetex Semconductors Limited is an ISO 9001 and TS16949 certified semiconductor manufacturer. 

To ensure quality of service and products we strongly advise the purchase of parts directly from Diodes Inc. or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: **www.zetex.com or www.diodes.com** Diodes Inc. does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. **ESD (Electrostatic discharge)** 

Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. 

## **Green compliance** 

Diodes Inc. is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. 

All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. 

**Product status key:** “Preview” Future device intended for production at some point. Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued 

**Datasheet status key:** “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. 

## **Sales offices** 

|**The Americas**|**Europe**|**Taiwan**|**Shanghai**|**Shenzhen**|**Korea**|
|---|---|---|---|---|---|
|3050 E. Hillcrest Drive|Kustermann-Park|7F, No. 50,|Rm. 606, No.1158|ANLIAN Plaza, #4018|6 Floor, Changhwa B/D,|
|Westlake Village,|Balanstraße 59,|Min Chuan Road|Changning Road|Jintian Road|1005-5 Yeongtong-dong,|
|CA 91362-3154|D-81541 München|Hsin-Tien|Shanghai, China|Futian CBD,|Yeongtong-gu, Suwon-si,|
|Tel: (+1) 805 446 4800|Germany|Taipei, Taiwan|Tel: (+86) 215 241 4882|Shenzhen, China|Gyeonggi-do, Korea 443-813|
|Fax: (+1) 805 446 4850|Tel: (+49) 894 549 490|Tel: (+886) 289 146 000|Fax (+86) 215 241 4891|Tel: (+86) 755 882 849 88|Tel: (+82) 312 731 884|
||Fax: (+49) 894 549 4949|Fax: (+886) 289 146 639||Fax: (+86) 755 882 849 99|Fax: (+82) 312 731 885|



## **Issue 4 - January 2009** 

**6** 

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© Diodes Incorporated, 2008 



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