# Bipolar (BJT) Single Transistor, NPN, 60 V, 5 A, 1.2 W, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3405160/)

**URL**: https://novapart.co/products/ZXTN2018FQTA/bipolar-bjt-single-transistor-npn-60-v-5-a-12-w
**SKU**: ZXTN2018FQTA
**Manufacturer**: DIODES INC.
**Price**: €0.2490
**Stock**: 1000+
**Lead Time**: 302 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.2W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 130MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 40hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 5A |
| Collector Emitter Voltage Max | 60V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3405160/)

**ZXTN2018FQ** ~~>~~ 

## **60V NPN MEDIUM POWER TRANSISTOR IN SOT23** 

## **Description** 

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirement of Automotive Applications. 

## **Features** 

- BVCEO > 60V 

- Maximum Continuous Collector Current IC = 5A 

## **Mechanical Data** 

   - Case: SOT23 

   - Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 

   - Weight: 0.008 grams (Approximate) 

- VCE(SAT) < 45mV @ 1A 

- RCE(SAT) = 25m Ω 

- High Power Dissipation SOT23 (Type DN) Package 

- High Peak Current 

- Low Saturation Voltage 

- 140V Forward Blocking Voltage 

## **Applications** 

   - MOSFET and IGBT Gate Driving 

   - Motor Drive 

   - Relay, Lamp and Solenoid Drive 

- Complementary Part Number ZXTP2027FQ 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

**==> picture [347 x 103] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT23 (Type DN)  C<br>B<br>@ ©<br>E<br>Top View<br>Top View  Device Symbol  Pin-Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 5) 

|||||||
|---|---|---|---|---|---|
|**Part Number**|**Compliance**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity per Reel**|
|ZXTN2018FQTA|Automotive|851|7|8|3,000|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/. 

5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

|||||||SOT23 (Type DN)|SOT23 (Type DN)|SOT23 (Type DN)|SOT23 (Type DN)|SOT23 (Type DN)|SOT23 (Type DN)|SOT23 (Type DN)|||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||851<br>YM||||||||851 = Product Type Marking Code<br>YM = Date Code Marking<br>Y = Year ex: G = 2019|||||||||
|||||||||||||||M = Month ex: 9 = September|||||||||
|Date Code Key|||||||||||||||||||||||
|**Year**<br>**2018**<br>**2019**<br>**2020**<br>**2021**<br>**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>**2027**<br>**2028**<br>**2029**<br>**Code**<br>F<br>G<br>H<br>I<br>J<br>K<br>L<br>M<br>N<br>O<br>P<br>Q<br>**Month**<br>**Jan**<br>**Feb**<br>**Mar**<br>**Apr**<br>**May**<br>**Jun**<br>**Jul**<br>**Aug**<br>**Sep**<br>**Oct**<br>**Nov**<br>**Dec**<br>**Code**<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>O<br>N<br>D<br>~~ee~~<br>~~SS SS~~|||||||||||||||||||||||
|ZXTN2018FQ||||||||||||||1 of 7|||||||May 2019|May 2019|
|Document number: DS41628  Rev. 1 - 2||||||||||||||**www.diodes.com**||||||© Diodes Incorporated||© Diodes Incorporated|



May 2019 © Diodes Incorporated 

**ZXTN2018FQ** 

## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|140|V|
|Collector-Emitter Voltage|VCEV|140|V|
|Collector-Emitter Voltage|VCEO|60|V|
|Emitter-Base Voltage|VEBO|7|V|
|Continuous Collector Current|IC|5|A|
|Base Current|IB|1|A|
|Peak Pulse Current|ICM|12|A|



**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation<br>Linear Derating Factor|(Note 6)|PD|1.0<br>8.0|W<br>mW/°C|
||(Note 7)||1.2<br>9.6||
||(Note 8)||1.56<br>12.5||
|Thermal Resistance, Junction to Ambient|(Note 6)|RθJA|125|°C/W|
||(Note7)||104||
||(Note 8)||80||
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



## **ESD Ratings** (Note 9) 

|**ESD Ratingsgss **(Note 9)|**ESD Ratingsgss **(Note 9)|**ESD Ratingsgss **(Note 9)|**ESD Ratingsgss **(Note 9)|**ESD Ratingsgss **(Note 9)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge - Human BodyModel|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|400|V|C|



Notes: 6. For a device mounted with the collector lead on 18mm  18mm 2oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in steady-state. 

7. Same as note (6), except the device is mounted on 30mm  30mm 2oz copper. 

8. Same as note (6), except measured at t < 5 seconds. 

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

**==> picture [240 x 593] intentionally omitted <==**

**----- Start of picture text -----**<br>
V CE(SAT) eeA ee See Note (7)<br>10 eS Limited ee<br>Ht SRE PRE IA<br>1<br>DC<br>1s<br>100m footy 100ms LORNA<br>10ms<br>Single Pulse<br>T =25 o C 1ms<br>10m A 1 100  s<br>100m 1 10<br>VCE  Collector-Emitter Voltage (V)<br>Safe Operating Area<br>120<br>T =25oC<br>100 A YU T FA<br>See Note (7)<br>80<br>60 D=0.5<br>ae TAC aEAP| TT<br>40<br>D=0.2 Single Pulse<br>20 aw Al> aillin D=0.05 Il<br>D=0.1<br>0<br>100μ100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s)<br>Transient Thermal Impedance<br>1.2<br>See Note (7)<br>i<br>1.0<br>0.8 TP TNNSIN, N<br>0.6<br>See Note (6)<br>0.4 oa| Nee<br>0.2 eeee N ee<br>0.0 Pt}ET PE EN Us<br>0 20 40 60 80 100 120 140 160<br> Temperature (oC)<br>Derating Curve<br>  Collector Current (A)<br>C<br>I<br>C/W)<br>o<br>Thermal Resistance (<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


**==> picture [242 x 387] intentionally omitted <==**

**----- Start of picture text -----**<br>
100100µ μ SS SS SS SSS SS _ SSS S SS SS<br>rrrr<br>BV =60V<br>(BR)CEO<br>eee eee ====-===—<br>10µ10 μ || | | | | tt Failure may occur |<br>in this region<br>1µ1 μ SERRE See<br>= T A =25 o C CCE BV (BR)CEV =140V -<br>0 20 40 60 80 100 120 140<br>VCE Collector-Emitter Voltage (V)<br>Safe Operating Area<br>100<br>NATIT IIE TAI Single Pulse |<br>o<br>T =25 C<br>A<br>See Note (7)<br>10<br>HINmT LINEA LN l<br>SeesCCH re oceanCI e Gea PRved eo nema oes<br>1<br>100μ100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s)<br>Pulse Power Dissipation<br> Collector Current (A)<br>C<br> I<br> Maximum Power (W)<br>**----- End of picture text -----**<br>


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## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|Collector-Base Breakdown Voltage<br>~~GD~~|BVCBO<br>~~GD~~|140<br>~~GD~~|180|—<br>~~(OOO~~|V<br>~~(OOO~~|IC= 100µA<br>~~(OOO~~|
|Collector-Emitter Breakdown Voltage<br>~~GD~~|BVCEV<br>~~GD~~|140<br>~~GD~~|180|—<br>~~(OOO~~|V<br>~~(OOO~~|IC= 1µA,-1V < VBE< +0.3V<br>~~(OOO~~|
|Collector-Emitter Breakdown Voltage(Note 10)<br>~~GD~~<br>~~eo~~|BVCEO<br>~~GD~~<br>~~eo~~|60<br>~~GD~~<br>~~eo~~|80<br>~~eo~~|—<br>~~(OOO~~<br>~~eo~~|V<br>~~(OOO~~<br>~~eo~~|IC= 10mA<br>~~(OOO~~<br>~~eo~~|
|Emitter-Base Breakdown Voltage<br>~~eo~~|BVEBO<br>~~eo~~|7<br>~~eo~~|8<br>~~eo~~|—<br>~~eo~~|V<br>~~eo~~|IE= 100µA<br>~~eo~~|
|Collector-Base Cutoff Current<br>~~—————~~|ICBO<br>~~—————~~|—<br>~~—————~~|< 1<br>~~—————~~|50<br>~~—————~~|nA<br>~~—————~~|VCB= 110V<br>~~—————~~|
|Collector-Emitter Cutoff Current<br>~~—————~~|ICEV<br>~~—————~~|—<br>~~—————~~|< 1<br>~~—————~~|100<br>~~—————~~|nA<br>~~—————~~|VCB= 110V,VBE= -1V<br>~~—————~~|
|Emitter-Base Cutoff Current<br>~~—————~~|IEBO<br>~~—————~~|—<br>~~—————~~|< 1<br>~~—————~~|10<br>~~—————~~|nA<br>~~—————~~|VEB= 6V<br>~~—————~~<br>~~ES~~|
|Static Forward Current Transfer Ratio (Note 10)<br>~~REE~~|hFE<br>~~REE~~|100<br>~~REE~~|220<br>~~REE~~|—<br>~~REE~~|—<br>~~REE~~<br>~~Eo~~|IC= 10mA,VCE= 1V<br>~~REE~~<br>~~ES~~|
|||100<br>~~REE~~|200<br>~~REE~~|300<br>~~REE~~||IC= 2A,VCE= 1V<br>~~REE~~<br>~~ES~~|
|||40<br>~~REE~~|65<br>~~REE~~|—<br>~~REE~~||IC= 5A,VCE= 1V<br>~~REE~~<br>~~ES~~|
|||15<br>~~REE~~<br>~~Eo~~|25<br>~~REE~~<br>~~Eo~~|—<br>~~REE~~<br>~~Eo~~||IC= 10A,VCE= 1V<br>~~REE~~<br>~~ES~~<br>~~Eo~~|
|Collector-Emitter Saturation Voltage (Note 10)<br>~~=~~|VCE(SAT)<br>~~=~~|—<br>~~Eo~~<br>~~=~~|15<br>~~Eo~~<br>~~=~~|30<br>~~Eo~~<br>~~=~~|mV<br>~~Eo~~<br>~~=~~|IC= 0.1A,IB= 5mA<br>~~ES~~<br>~~Eo~~<br>~~=~~|
|||—<br>~~=~~|35<br>~~=~~|45<br>~~=~~||IC= 1A,IB= 100mA<br>~~=~~|
|||—<br>~~=~~|40<br>~~=~~|55<br>~~=~~||IC= 1A,IB= 50mA<br>~~=~~|
|||—<br>~~=~~<br>~~Sn~~|85<br>~~=~~<br>~~Sn~~|110<br>~~=~~<br>~~Sn~~||IC= 2A,IB= 50mA<br>~~=~~|
|||—<br>~~=~~<br>~~Sn~~|145<br>~~=~~<br>~~Sn~~|170<br>~~=~~<br>~~Sn~~||IC= 5A,IB= 250mA<br>~~=~~|
|||—<br>~~=~~|170<br>~~=~~|210<br>~~=~~||IC= 6A,IB= 300mA<br>~~=~~|
|Base-Emitter Saturation Voltage(Note 10)|VBE(SAT)|—|0.92|1.00|V|IC= 5A,IB= 250mA|
|Base-Emitter Saturation Voltage(Note 10)<br>~~ee~~|VBE(ON)<br>~~ee~~|—<br>~~ee~~|0.85<br>~~ee~~|0.95<br>~~ee~~|V<br>~~ee~~|IC= 5A,VCE= 1V<br>~~ee~~|
|Output Capacitance<br>~~ee~~|COBO<br>~~ee~~<br>~~rs~~|—<br>~~ee~~|28<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~|VCB= 10V,f = 1MHz<br>~~ee~~|
|Transition Frequency<br>~~es~~|fT<br>~~es~~<br>~~rs~~|—<br>~~es~~|130<br>~~es~~|—<br>~~es~~|MHz<br>~~es~~|VCE= 10V, IC= 100mA,<br>f = 50MHz<br>~~es~~|
|Turn-On Time<br>~~rE~~|tON<br>~~rs~~<br>~~rE~~|—<br>~~rE~~|33<br>~~rE~~|—<br>~~rE~~|ns<br>~~rE~~|VCC= 10V, IC= 1A,<br>IB1= -IB2= 100mA<br>~~rE~~|
|Turn-Off Time<br>~~rE~~|tOFF<br>~~rE~~|—<br>~~rE~~|668<br>~~rE~~|—<br>~~rE~~|ns<br>~~rE~~||



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## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

**==> picture [487 x 604] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 0.6<br>Sa T =25oC aSees A A  OO)estes i: I /I =10 a a<br>A 0.5 C B<br>100m poa FY 0.4 EYEH an<br>0.3 100 o C<br>eA ET o SU)!<br>Pere a I C /I B =50 0.2 TT 25 C Sn)<br>10m SeLT erte eas I I C C /I /I B B =10 =20 ia 0.1 eeEN22NYA -55oC |<br>=PEESerrEE EEeet rH— 0.0 Seepe|ae<br>1m 10m 100m 1 10 1m 10m 100m 1 10<br>IC   Collector Current (A) IC   Collector Current (A)<br>V  v I V  v I<br>CE(SAT) C CE(SAT) C<br>280 1.6<br>V CE =1V I C /I B =10<br>1.2 HI eae o || 240 1.4 ee<br>Seem 100 C Fo<br>1.00.8 PETITeeTreTI 25 o C NTTTINTTT 200160 1.2 PAIOnNN - Tn 55oC I TT<br>=i a 1.0 meal TILT Lee<br>o<br>0 4 25 C Hie OCH CHA<br>0.6 120<br>0PC rr. NTH 0.8 eeeS eeeedll<br>o<br>0.4 PTTTih TI -55 C 1S 80 TIN, re TI<br>| TCI] 0.6 a eret<br>0.2 | 40 PTT rN TIE TET<br>0.4 100 o C<br>0.0 eHPCI PCr TPS 0 etPEaTT ll<br>1m 10m 100m 1 10 1m 10m 100m 1 10<br>IC   Collector Current (A) IC   Collector Current (A)<br>h  v I V  v I<br>FE C BE(SAT) C<br>1.4 V =1V PT<br>CE aeeTET TTT<br>1.2 a<br>aa -55oC A<br>1.0 a ee<br>25 o C<br>0.8 pk TIN<br>AUT NE Sr<br>eT<br>0.6 |ereT I IIT<br>0.4 arr | i o tT<br>100 C<br>PTT P|tt PtHETI<br>1m 10m 100m 1 10<br>IC   Collector Current (A)<br>V  v I<br>BE(ON) C<br>  (V)<br>  (V)<br>CE(SAT)<br>CE(SAT)<br>V<br>V<br>)<br>FE<br>  (V)<br>BE(SAT)<br>V<br>Normalised Gain  Typical Gain (h<br> (V)<br>BE(ON)<br>V<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT23 (Type DN)** 

**==> picture [439 x 216] intentionally omitted <==**

**----- Start of picture text -----**<br>
b<br>“ L E<br>SOT23 (Type DN)<br>E Dim  Min  Max  Typ<br>> A  0.89  1.12  1.00<br>A1  0.01  0.10  0.05<br>b  0.30  0.51  0.45<br>c  0.08  0.20  0.10<br>e D  2.80  3.04  3.00<br>e1 E  2.10  2.64  2.42<br>E1  1.20 1.40 1.37<br>ey D === e  0.95 REF<br>E1<br>e1  1.90 REF<br>L  0.25 0.60 0.30<br>L<br>L1  0.45  0.62  0.54<br>A All Dimensions in mm<br>c<br>Si NU 4 J |<br>A1<br>L<br>Ju<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT23 (Type DN)** 

**==> picture [136 x 123] intentionally omitted <==**

**----- Start of picture text -----**<br>
Y<br>Y1 ae C<br>oH<br>Poo X X1<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|2.0|
|**X**|0.8|
|**X1**|1.35|
|**Y**|0.9|
|**Y1**|2.9|



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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

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## Links

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- [Supplier page](https://es.farnell.com/diodes-inc/zxtn2018fqta/trans-npn-60v-1-2a-150deg-c-1/dp/3405160)
---

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