# Bipolar (BJT) Single Transistor, NPN, 20 V, 7.5 A, 27.8 W, SOT-89, Surface Mount

![Product image](https://novapart.co/image/farnell:3943378RL/)

**URL**: https://novapart.co/products/ZXTN19020DZTA/bipolar-bjt-single-transistor-npn-20-v-75-a-278-w
**SKU**: ZXTN19020DZTA
**Manufacturer**: DIODES INC.
**Price**: €0.2530
**Stock**: 500+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 27.8W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 160MHz |
| Transistor Case Style | SOT-89 |
| Dc Current Gain Hfe Min | 150hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 7.5A |
| Collector Emitter Voltage Max | 20V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943378RL/)

**ZXTN19020DZ** [7 **20V NPN HIGH GAIN TRANSISTOR IN SOT89** 

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Green<br>&<br>**----- End of picture text -----**<br>


## **Features** 

## **Mechanical Data** 

- BVCEO > 20V 

- IC = 7.5A Continuous Current 

- Low Saturation Voltage VCE(sat) < 35mV @ 1A 

- Rsat = 27mΩ for a Low Equivalent On-Resistance 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** 

- Case: SOT89 

- Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 

- Weight: 0.05 grams (Approximate) 

**https://www.diodes.com/quality/product-definitions/** 

## **Application** 

- Emergency lighting circuits 

- Motor driving 

- Camera strobe 

- Boost converter 

- CCFL backlight inverters 

- MOSFET gate drivers 

- LED Driving 

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SOT89<br>C<br>E<br>B<br>C C<br>B<br>E<br>Top View<br>Top View  Device Symbol  Pin Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|---|---|---|
|||||||
|**Part Number**|**Compliance**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity Per Reel**|
|ZXTN19020DZTA|Standard|1L8|7|12|1,000|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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1L8<br>**----- End of picture text -----**<br>


1L8 = Product Type Marking Code 

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**ZXTN19020DZ** 

## **Absolute Maximum Ratings** (@ TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@ TA = +25°C, unless otherwise specified.)TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|70|V|
|Collector-emitter voltage (forward blocking voltage)|VCEX|70|V|
|Collector-Base Voltage|VCBS|20|V|
|Emitter-Collector voltage (reverse blocking)|VECX|6|V|
|Emitter-Base Voltage|VEBO|7|V|
|Continuous Collector Current|IC|7.5|A|
|Peak Pulse Collector Current (single pulse)|ICM|20|A|
|Base Current|IB|1|A|



## **Thermal Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation (Note 5)<br>Linear DeratingFactor|PD|1.1<br>1.8|W<br>mW/°C|
|Power Dissipation (Note 6)<br>Linear DeratingFactor|PD|1.8<br>14.4|W<br>mW/°C|
|Power Dissipation (Note 7)<br>Linear DeratingFactor|PD|2.4<br>19.2|W<br>mW/°C|
|Power Dissipation (Note 8)<br>Linear DeratingFactor|PD|4.46<br>35.7|W<br>mW/°C|
|Power Dissipation (Note 9)<br>Linear DeratingFactor|PD|27.8<br>222|W<br>mW/°C|
|Thermal Resistance, Junction to Ambient (Note 5)|RθJA|117|°C/W|
|Thermal Resistance, Junction to Ambient (Note 6)|RθJA|68|°C/W|
|Thermal Resistance, Junction to Ambient (Note 7)|RθJA|51|°C/W|
|Thermal Resistance, Junction to Ambient (Note 8)|RθJA|28|°C/W|
|Operating and Storage Temperature Range (Note 9)|TJ,TSTG|-55 to +150|°C|



Notes: 5. For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; device measured when operating in steady state condition. 

6. Same as note (5), except the device is mounted on 25mm x 25mm x 0.6mm single sided 1oz weight copper. 

7. Same as note (5), except the device is mounted on 50mm x 50mm x 0.6mm single sided 1oz weight copper. 

8. Same as note (5), except the device is measured at t<5 seconds. 

9. Junction to case (collector tab). Typical. 

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**ZXTN19020DZ** 

## **Thermal Characteristics and Derating Information** 

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**ZXTN19020DZ** 

## **Thermal Characteristics and Derating Information** 

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120 100<br>ai T amb =25°C A EH Single Pulse<br>10080 THM see note (5) TCT TTIAf SSa a a see note (5) T amb =25°C ill<br>D=0.5<br>60 STee weilti?AuAttt 10 iCOST\ aTTa a il<br>40<br>acl D=0.2 HemetLZ Sin | gle Pulse il BoE: a a<br>20 Tenist D=0.05 ni CT TT TIME TTT SSSI TT TTT<br>0 SeeFssonieees antiSA D=0.1 inAMTl 1 ST UME EAITT CTVT  TT INH TT PP SsURLI<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


## **Transient Thermal Impedance** 

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100<br>7060 | see note (6)T75 amb =25°C a N CO TTT TTT TT Single PulseT amb =25°C<br>- of nf7 | | see note (6) il<br>50 ieee| (Zl ll a ~a a | ll<br>40 D=0.5<br>pn N= mnAMT AN 10 Bin| |<br>30<br>Cee ae Single Pulse SSE eaet eee Se ee eet<br>D=0.2<br>20 Se a A ill Sr<br>a enOeor ee D=0.05 ouWiecH pnFTCa a ST<br>10 se Z ae nil LIPS TTT<br>D=0.1<br>EE a TINE TCIM TIT | AT<br>0 Se et CCH 1 TIME HAI ATI TN IEE I<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>100<br>50 | Tamb=25 ° C EL i SavilleCoCeesti Single Pulse<br>see note (7) Tamb=25°C<br>40 see note (7)<br>aaa all —T VA a a a Hill<br>D=0.5<br>30<br>eee Aerstataa TI 10 MTSETINSaTE TET Il<br>20 FHArover D=0.2 eZ Zal D=0.05 Single Pulse il ptyon Conna INCee<br>10 peoyZan SN IE TIE I TT TM sSTTT<br>D=0.1<br>0 eTSteerCO aa LLETTUT 1 UECTTHAI ATTNIETR<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


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**www.diodes.com** 

**ZXTN19020DZ** 

**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~Te~~|**Symbol**<br>~~Te~~|**Min**<br>~~Te~~|**Typ**<br>~~Te~~|**Max**<br>~~Te~~|**Unit**<br>~~Te~~|**Test Condition**<br>~~Te~~|
|Collector-Base Breakdown Voltage<br>~~Te~~|BVCBO<br>~~Te~~|70<br>~~Te~~|100<br>~~Te~~|—<br>~~Te~~|V<br>~~Te~~|IC= 100μA<br>~~Te~~|
|Collector-Emitter Breakdown Voltage<br>(forward blocking)<br>~~OO~~|BVCEX<br>~~OO~~|70<br>~~OO~~|100<br>~~OO~~<br>~~GG~~|—<br>~~OO~~<br>~~GG~~|V<br>~~OO~~<br>~~GG~~|IC= 100µA, RBE≤ 1kΩ or<br>-1V < VBE< 0.25V<br>~~OO~~|
|Collector- Emitter Breakdown Voltage (Note 10)<br>~~DG~~|BVCEO<br>~~DG~~|20<br>~~DG~~|30<br>~~DG~~<br>~~GG~~|—<br>~~DG~~<br>~~GG~~|V<br>~~DG~~<br>~~GG~~|IC= 10mA<br>~~DG~~|
|Emitter-Collector Breakdown Voltage<br>(reverse blocking)<br>~~OO~~|BVECX<br>~~OO~~<br>~~a~~|6<br>~~OO~~|8.4<br>~~GG~~<br>~~OO~~|—<br>~~GG~~<br>~~OO~~|V<br>~~GG~~<br>~~OO~~|IE= 100µA, RBC≤ 1kΩ or<br>0.25V > VBE> -0.25V<br>~~OO~~|
|Emitter-Collector Breakdown Voltage<br>(reverse blocking)<br>~~eS~~<br>~~Se~~|BVECO<br>~~eS~~<br>~~a~~|4.5<br>~~eS~~|5.7<br>~~eS~~|—<br>~~eS~~<br>~~CO~~|V<br>~~eS~~<br>~~CO~~|IE= 100μA<br>~~eS~~|
|Emitter-Base Breakdown Voltage<br>~~GG~~<br>~~Se~~|BVEBO<br>~~a~~<br>~~GG~~|7.0<br>~~GG~~|8.4<br>~~GG~~|—<br>~~GG~~<br>~~CO~~|V<br>~~GG~~<br>~~CO~~|IE= 100μA<br>~~GG~~|
|Collector-Base Cut-Off Current<br>~~Se~~<br>~~Se~~|ICBO<br>~~OO~~|—<br>~~OO~~|1<br>~~OO~~|50<br>0.5<br>~~CO~~|nA<br>µA<br>~~CO~~|VCB= 70V<br>VCB= 70V, Tamb=100°C|
|Collector-Emitter Cut-Off current<br>~~Se~~<br>~~Se~~|ICEX<br>~~OO~~|—<br>~~OO~~<br>~~QO~~|—<br>~~OO~~<br>~~QO~~|100<br>~~CO~~<br>~~QO~~|nA<br>~~CO~~|VCE = 70V, RBE≤ 1kΩ or<br>-1V < VBE< 0.25V|
|Emitter-Base Cut-Off Current<br>~~Se~~<br>~~eG~~|IEBO<br>~~OO~~<br>~~eG~~|—<br>~~OO~~<br>~~eG~~<br>~~QO~~|1<br>~~OO~~<br>~~eG~~<br>~~QO~~|50<br>~~eG~~<br>~~QO~~|nA<br>~~eG~~|VEB= 5.6V<br>~~eG~~|
|Collector-Emitter Saturation Voltage (Note 10)|VCE(sat)|—<br>~~QO~~|26<br>50<br>75<br>60<br>83<br>155<br>~~QO~~|32<br>70<br>100<br>80<br>105<br>200<br>~~QO~~|mV|IC= 1A, IB= 100mA<br>IC= 1A, IB= 10mA<br>IC= 2A, IB= 20mA<br>IC= 2A, IB= 40mA<br>IC= 4A, IB= 400mA<br>IC= 7.5A, IB= 375mA|
|Base-Emitter Saturation Voltage (Note 10)|VBE(sat)|—|1000|1100|mV|IC= 7.5A, IB= 375mA|
|Base-Emitter Turn-On Voltage (Note 10)|VBE(on)|—|870|1000|mV|IC= 7.5A, VCE= 2V|
|DC Forward Gain (Note 10)|hFE|300<br>260<br>150<br>50<br>—|450<br>390<br>210<br>75<br>35|900<br>—<br>—<br>—<br>—|—|IC= 100mA, VCE= 2V<br>IC= 2A, VCE= 2V<br>IC= 7.5A, VCE= 2V<br>IC= 15A, VCE= 2V<br>IC= 20A, VCE= 2V|
|Transitional frequency<br>~~a ~~|fT<br> ~~a~~|—<br>~~a~~|160<br>~~a~~|—|MHz|IC= 50mA, VCE= 10V<br>f = 100MHz|
|Input Capacitance<br>~~EE~~|Cibo<br>~~EE~~|—<br>~~EE~~|297<br>~~EE~~|400<br>~~EE~~|pF<br>~~EE~~|VEB= 0.5V, f = 1MHz<br>~~EE~~|
|Output Capacitance<br>~~EE~~<br>~~ee~~|Cobo<br>~~EE~~|—<br>~~EE~~|32.6<br>~~EE~~<br>~~||~~|40<br>~~EE~~|pF<br>~~EE~~|VCB= 10V, f = 1MHz<br>~~EE~~|
|Delay time<br>~~ee~~<br>~~ee~~|td<br>~~ee~~|—|129<br>~~||~~<br>~~||~~|—|ns|IC= 1A, VCC= 10V,<br>IB1=-IB2= 10mA|
|Rise time<br>~~ee~~<br>~~ee~~|tr<br>~~ee~~||96<br>~~||~~<br>~~||~~||||
|Storage time<br>~~ee~~<br>~~ee~~|ts<br>~~ee~~||398<br>~~||~~<br>~~|~~||||
|Fall time<br>~~ee~~|tf||90<br>~~|~~||||



Note: 10. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%. 

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**ZXTN19020DZ** 

**Typical Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.) 

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## **Package Outline Dimensions** 

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Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SOT89<br>D1<br>> c<br>SOT89<br>- H Dim  Min  Max  Typ<br>E A  1.40 1.60  1.50<br>B  0.50  0.62  0.56<br>B1  0.42  0.54  0.48<br>c  0.35  0.43  0.38<br>B1 L D  4.40 4.60 4.50<br>B<br>D1  1.62  1.83 1.733<br>cee e { oe D2  1.61  1.81  1.71<br>D2 E  2.40  2.60  2.50<br>TOP VIEW<br>E2  2.05  2.35  2.20<br>e  -  -  1.50<br>H  3.95 4.25 4.10<br>- a H1 r === H1  2.63 2.93 2.78<br>E2 L  0.90 1.20  1.05<br>A L1  0.327 0.527 0.427<br>z  0.20 0.40  0.30<br>L1 All Dimensions in mm<br>ee D z 4<br>eal Anal 5===<br>BOTTOM VIEW<br>Suggested Pad Layout<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>8° (<br>4X)<br>R0.200<br>**----- End of picture text -----**<br>


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SOT89<br>X2<br>Value<br>Dimensions<br>(in mm)<br>Y3 C  1.500<br>Y1 G  0.244<br>m n —— X  0.580<br>Y4 X G X1  0.760<br>X2  1.933<br>Y  1.730<br>Y Y2 Y1  3.030<br>Y2  1.500<br>Y3  0.770<br>X1 Y4  4.530<br>= C<br>**----- End of picture text -----**<br>


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## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/)  or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2021 Diodes Incorporated 

**www.diodes.com** 

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## Links

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- [Supplier page](https://es.farnell.com/diodes-inc/zxtn19020dzta/trans-npn-20v-7-5a-150deg-c-2/dp/3943378RL)
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