# Bipolar (BJT) Single Transistor, NPN, 150 V, 1 A, 1.5 W, SOT-89, Surface Mount

![Product image](https://novapart.co/image/farnell:3943374RL/)

**URL**: https://novapart.co/products/ZXTN10150DZTA/bipolar-bjt-single-transistor-npn-150-v-1-a-15-w
**SKU**: ZXTN10150DZTA
**Manufacturer**: DIODES INC.
**Price**: €0.1650
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.5W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 135MHz |
| Transistor Case Style | SOT-89 |
| Dc Current Gain Hfe Min | 100hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 1A |
| Collector Emitter Voltage Max | 150V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943374RL/)

**A Product Line of Diodes Incorporated** 

**ZXTN10150DZ** 

## **150V NPN LED DRIVING TRANSISTOR IN SOT89** 

## **Features** 

- BVCEO > 150V 

- hFE > 100  for IC = 150mA, VCE = 0.25V 

- IC (cont) = 1A 

- **Lead Free, RoHS Compliant (Note 1)** 

- **Halogen and Antimony Free "Green" Device (Note 2)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

- Case: SOT-89 

- Case Material: Molded Plastic. “Green” Molding Compound. 

- • UL Flammability Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Matte Tin Finish 

- Weight: 0.008 grams (Approximate) 

## **Applications** 

- LED TV backlight 

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SOT89<br>C<br>E<br>B C C<br>B<br>E<br>Top View  Device symbol  Pinout – top view<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Product**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|---|---|---|---|---|
|ZXTN10150DZTA|1R4|7|12|1000|



Notes: 1. No purposefully added lead. 

2. “Green” devices, Halogen and Antimony Free, Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 

## **Marking Information** 

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1R4 1R4 - Product Type Marking Code<br>**----- End of picture text -----**<br>


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ZXTN10150DZ Document Number: DS35096 Rev: 1 - 2 

November 2010 © Diodes Incorporated 

**A Product Line of Diodes Incorporated ZXTN10150DZ** ——— 

**Maximum Ratings** @TA = 25°C unless otherwise specified 

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|||||
|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Collector-Base Voltage|VCBO|150|V|
|Collector-Emitter Voltage|VCEO|150|V|
|Emitter-Base Voltage|VEBO|7|V|
|Continuous Collector Current|IC|1|A|
|Peak Pulse Current (Note 4)|ICM|3|A|
|Base Current|IB|500|mA|

**----- End of picture text -----**<br>


**Thermal Characteristics** @TA = 25°C unless otherwise specified 

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|||||
|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Power Dissipation (Note 3)|PD|1.5|W|
|Thermal Resistance, Junction to Ambient (Note 3)|RθJA|83|°C/W|
|Thermal Resistance, Junction to Leads|RθJL|6.36|°C/W|
|Operating and Storage Temperature Range|TJ, TSTG|-55 to +150|°C|

**----- End of picture text -----**<br>


Notes: 3. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions. 4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%. 

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ZXTN10150DZ Document Number: DS35096 Rev: 1 - 2 

November 2010 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXTN10150DZ** 

## **Thermal Characteristics and Derating information** 

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V<br>CE(sat) 1.5<br>Limited<br>1 |TD,TSWN SS PLTPLINGEEEET ELET ETTELE<br>ham DC 1s LAL NOEL NOUN INT A 1.0 NQ<br>PTT IONS SERN<br>100m 100ms<br>po 10ms NONE 0.5 POOP NTT<br>Single Pulse 1ms<br>SSeS Pee == COLELLO NTT<br>Tamb=25°C 100µs<br>10m EN 0.0 PL TT TT TT [TIEN] I I<br>100m 1 10 100 0 25 50 75 100 125 150 175<br>VCE  Collector-Emitter Voltage (V)  Temperature (°C)<br>Safe Operating Area<br>Derating Curve<br>90<br>80 T amb =25 ° C 100 Single Pulse<br>70 Fa ALTATCTLAT TCETTL TATAA UESe Tamb=25°C lltt<br>60 ST TT TT Aa Il FFE<br>50 D=0.5<br>a [a] ec i CESTFEE CH CHECE<br>40 Sacre UL a 10 SUTIL UTS UTE AMT<br>30 ITLL Lereceat Hill SSS eee mece ttt eestiattest<br>D=0.2 D=0.05<br>20<br>D=0.1<br>10<br>pane eee RL | O00800<br>0 eerie TI (TI Single Pulse TTI 1 PTE CITI UI ETE ITs<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>  Collector Current (A)<br>IC<br> Max Power Dissipation (W)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


**Transient Thermal Impedance** 

**Pulse Power Dissipation** 

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ZXTN10150DZ Document Number: DS35096 Rev: 1 - 2 

November 2010 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

## **ZXTN10150DZ** [ 

## **Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specifiedpecifiedecified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specifiedpecifiedecified|||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol **|**Min**|**Typ**|**Max **|**Unit**|**Test Condition **|
|Collector-Base Breakdown Voltage|BVCBO|150|300|-|V|IC= 100µA|
|Collector-Emitter Breakdown Voltage(Note 5)|BVCEO|150|175|-|V|IC= 10mA|
|Emitter-Base Breakdown Voltage|BVEBO|7|8.3|-|V|IE= 100µA|
|Collector Cut-off Current|ICBO|-|-|50|nA|VCB= 150V|
|Emitter Cut-off Current|IEBO|-|-|50|nA|VEB= 7V|
|Static Forward Current Transfer Ratio (Note 5)<br>~~es~~|hFE<br>~~es~~|200<br>60<br>100<br>~~es~~|450<br>180<br>150<br>~~es~~|-<br>-<br>-<br>~~es~~|-<br>~~es~~|IC= 30mA, VCE= 5V<br>IC= 85mA, VCE= 0.20V<br>IC= 150mA,VCE= 0.25V<br>~~es~~|
|Base-Emitter Turn-On Voltage(Note 5)<br>~~es~~|VBE(on)<br>~~es~~|-<br>~~es~~|0.701<br>~~es~~|0.95<br>~~es~~|V<br>~~es~~|IC= 150mA,VCE= 0.25V<br>~~es~~|
|Output Capacitance|COBO|-|10|-|pF|VCB= 10V,f = 1MHz|
|Current Gain-Bandwidth Product|ft|-|135|-|MHz|VCB= 10V, Ic = 10mA,<br>f = 100MHz|
|DelayTime|t(d)|-|625|-|ns|VCC= 110V, IC= 150mA,<br>-IB2= 1.5mA, VCE(ON) = 0.25V<br>~~————~~|
|Rise Time|t(r)|-|562|-|ns||
|Storage Time|t(s)<br>~~ee~~|-<br>~~ee~~|2465<br>~~ee~~|-<br>~~ee~~|ns<br>~~ee~~||
|Fall Time<br>~~————~~|t(f)<br>~~————~~<br>~~ee~~|-<br>~~————~~<br>~~ee~~|289<br>~~————~~<br>~~ee~~|-<br>~~————~~<br>~~ee~~|ns<br>~~————~~<br>~~ee~~||
|Storage Time<br>~~————~~|t(s)<br>~~————~~<br>~~ee~~|-<br>~~————~~<br>~~ee~~|461<br>~~————~~<br>~~ee~~|-<br>~~————~~<br>~~ee~~|ns<br>~~————~~<br>~~ee~~|VCC= 110V, IC= 150mA,<br>-IB2= 1.5mA,VCE(ON)= 4V<br>~~————~~|
|Fall Time<br>~~————~~|t(f)<br>~~————~~<br>~~ee~~|-<br>~~————~~<br>~~ee~~|52<br>~~————~~<br>~~ee~~|-<br>~~————~~<br>~~ee~~|ns<br>~~————~~<br>~~ee~~||



Notes: 5. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2% 

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ZXTN10150DZ Document Number: DS35096 Rev: 1 - 2 

November 2010 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXTN10150DZ** 

## **Typical Characteristics** 

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1<br>PT Tamb=25 TTT °C IC/IB=100 fn) IC/IB=20<br>a=el =FA A HW<br>_ IC/IB=50 i Ae ill 0.1 125°C i/}<br>IC/IB=20 A SA 100°C ff<br>100m<br>25°C<br>pe SH =e WS<br>PN TT SSS<br>I C /I B =10 -55°C<br>10m 0.0<br>Pete =  LL<br>1m 10m 100m 1 1m 10m 100m 1<br>IC   Collector Current (A) IC   Collector Current (A)<br>V  v I V  v I<br>CE(sat) C CE(sat) C<br>500 ETT 125°C * UM TT V CE =0.25V IM 1.0 I C /I B =20 mil -55°C TMT<br>a Ff 25 ° C Ui"<br>400<br>A 85°C  i 0.8 ae aa anil<br>PTT NO eT<br>300 pom I TTT aT NLee<br>25°C<br>PN CT 0.6 Ne eal<br>200 Ee TTeee<br>100 PTEPL -55°C TAITCCEAT [HCH] TTTCET [NQH] N S lT [EI] 0.4 TeeTT Teeell 85°C Till 125°C TITTill<br>0 PT TAT 0.2 PTT PITT<br>100µ 1m 10m 100m 1 1m 10m 100m 1<br>IC   Collector Current (A) IC   Collector Current (A)<br>h  v I V  v I<br>FE C BE(sat) C<br>1.2 30<br>1.0 ee V CE =0.25V a -55°C a 25 TTLHet ooo f = 1MHz T]<br>TTT 25°C = The POPSET PET PTT<br>20<br>0.8 En SCH Ser PPS<br>jp Ne<br>15<br>0.6 Se|_| pe esor Ee SSE~s <q<br>10 Cobo<br>Ser eee COao<br>0.4 125°C<br>5<br>IN 85°C fo Arora<br>0.2 aTPE) | | 0 CCIPii<br>1m 10m 100m 1 100m 1 10 100<br>IC   Collector Current (A) Voltage(V)<br>VBE(on) v IC Capacitance v Voltage<br>  (V)   (V)<br>CE(sat) CE(sat)<br>V V<br>  (V)<br>BE(sat)<br>V<br>Typical Gain (hFE)<br> (V)<br>BE(on)<br>V<br>Capacitance (pF)<br>**----- End of picture text -----**<br>


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ZXTN10150DZ Document Number: DS35096 Rev: 1 - 2 

November 2010 © Diodes Incorporated 

**A Product Line of Diodes Incorporated ZXTN10150DZ** [| 

## **Package Outline Dimensions** 

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D1<br>7 C<br>E<br>H<br>B L<br>Le] T a m C y,<br>B1 e<br>e1<br>A<br>D<br>8° (4X)<br>R0.200<br>**----- End of picture text -----**<br>


|**SOT89-3L**|**SOT89-3L**|**SOT89-3L**|
|---|---|---|
|**Dim**|**Min**|Max|
|**A**|1.40|1.60|
|**B**|0.44|0.62|
|**B1**|0.35|0.54|
|**C**|0.35|0.43|
|**D**|4.40|4.60|
|**D1**|1.52|1.83|
|**E**|2.29|2.60|
|**e**|1.50 Typ||
|**e1**|3.00Typ||
|**H**|3.94|4.25|
|**L**|0.89|1.20|
|**L**<br>0.89<br>1.20<br>**All Dimensions in mm**|||



## **Suggested Pad Layout** 

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X1<br>X2  ( 2x)<br>Y1<br>Y3 Y4<br>Y Y2<br>ia<br>C<br>‘Ol t<br>X (3x)<br>**----- End of picture text -----**<br>


|**Dimensions **|**Value (in mm)**|
|---|---|
|**esos**<br>**X**|**aue()**<br>0.900|
|**X1**|1.733|
|**X2**|0.416|
|**Y**|1.300|
|**Y1**<br>**Y2**|4.600<br>1.47|
|**Y2**|1.475|
|**Y3**|0.950|
|**Y4**|1.125|
|**C**|1.500|



6 of 7 **www.diodes.com** 

ZXTN10150DZ Document Number: DS35096 Rev: 1 - 2 

November 2010 © Diodes Incorporated 

**A Product Line of Diodes Incorporated ZXTN10150DZ** ——— 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

|A.   Life support devices or systems are devices or systems which:|A.   Life support devices or systems are devices or systems which:|
|---|---|
||1. are intended to implant into the body, or|



2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2010, Diodes Incorporated **www.diodes.com** 

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ZXTN10150DZ Document Number: DS35096 Rev: 1 - 2 

November 2010 © Diodes Incorporated 



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- [Supplier page](https://es.farnell.com/diodes-inc/zxtn10150dzta/trans-npn-150v-1a-150deg-c-1-5w/dp/3943374RL)
---

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