# Bipolar (BJT) Single Transistor, NPN, 400 V, 500 mA, 1.5 W, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:1471195/)

**URL**: https://novapart.co/products/ZXTN08400BFFTA/bipolar-bjt-single-transistor-npn-400-v-500-ma-15
**SKU**: ZXTN08400BFFTA
**Manufacturer**: DIODES INC.
**Price**: €0.2560
**Stock**: 1000+
**Lead Time**: 302 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:40MHz; Power Dissipation Pd:1.5W; DC Collector Current:500mA; DC Current Gain hFE:180hFE; Transistor Cas

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.5W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 40MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 180hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 500mA |
| Collector Emitter Voltage Max | 400V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1471195/)

**ZXTN08400BFF 400V NPN MEDIUM POWER HIGH VOLTAGE TRANSISTOR IN SOT23F** 

## DIODES. 

## **Features** 

## **Mechanical Data** 

- BVCEX > 450V 

- BVCEO > 400V 

- BVECO > 6V 

- IC = 0.5A Continuous Collector Current 

- Low Saturation Voltage VCE(SAT) < 175mV @ 500mA 

- 1.5W Power Dissipation 

- Complementary PNP Type: ZXTP08400BFF 

   - Case: SOT23F 

   - Case Material: Molded Plastic. ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 

   - Weight: 0.012 grams (Approximate) 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description** 

This NPN transistor has been designed for applications requiring high voltage blocking. The SOT23F package is pin compatible with the industry standard SOT23 foot print but offers lower profile and higher power dissipation for applications where power density is of utmost importance. 

## **Applications** 

- High Voltage 

- Low Saturation Voltage 

- Low Profile Small Package Outline 

**==> picture [379 x 136] intentionally omitted <==**

**----- Start of picture text -----**<br>
C<br>SOT23F<br>E<br>B<br>C<br>B<br>E<br>Top View  Device Symbol  Top View<br>Pin Configuration<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|
|---|---|---|---|---|---|
|||||||
|**Product**|**Compliance**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity per Reel**|
|ZXTN08400BFFTA|AEC-Q101|1D5|7|8|3,000|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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SOT23F<br>**----- End of picture text -----**<br>


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1D5<br>YW<br>**----- End of picture text -----**<br>


1D5 = Product Type Marking Code YW = Date Code Marking Y = Year : 0~9 W = Week : A~Z : 1~26 a~z : 27~52 z represents 52 & 53 week 

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## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Characteristic**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Collector-Base Voltage|VCBO|450|V|
|Collector-Emitter Voltage(Forward Blocking)|VCEX|450|V|
|Collector-Emitter Voltage|VCEO|400|V|
|Emitter-Collector Voltage(Reverse Blocking)|VECO|6|V|
|Emitter-Base Voltage|VEBO|7|V|
|Continuous Collector Current|IC|0.5|A|
|Peak Pulse Current|ICM|1|A|
|Base Current|IB|0.2|A|



**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Characteristic**|**Characteristic**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|---|
|Power Dissipation<br>Linear Derating Factor|(Note 5)|PD|0.84<br>6.72|W<br>mW/°C|
||(Note 6)||1.34<br>10.72||
||(Note 7)||1.5<br>12||
||(Note 8)||2<br>16||
|Thermal Resistance, Junction to Ambient|(Note 5)|RθJA|149|°C/W|
||(Note 6)||93.4||
||(Note 7)||83.3||
||(Note 8)||60||
|Thermal Resistance,Junction to Lead|(Note 9)|RθJL|43.8|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **ESD Ratings** (Note 10) 

|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|---|---|---|---|---|
|Electrostatic Discharge – Human BodyModel|ESD HBM|4,000|V|3A|
|Electrostatic Discharge – Machine Model|ESD MM|400|V|C|



Notes: 5.   For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 

6.   Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 

7.   Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 

8.   Same as Note 7, whilst measured at t < 5 seconds. 

9.   Thermal resistance from junction to solder-point (at the end of the collector lead). 

10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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## **Thermal Characteristics and Derating Information** 

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**----- Start of picture text -----**<br>
1m<br>V cot I i SS<br>CE(SAT) 50mm x 50mm FR-4, 2oz Cu i SS Failure may occur<br>1 Limited<br>100μ100 BV (BR)CEO =400V in this region<br>100m<br>oN DC 1s 10μ10 _<br>100ms<br>10m Tt SS a<br>10ms 1μ1<br>SinT AMB gle Pulse=25 o C 1ms 100s T AMB =25oC BV(BR)CEX=450V<br>1m les ics PO REE<br>100m 1 10 100 0 100 200 300 400 500 600 700<br>VCE  Collector-Emitter Voltage (V) VCE Collector-Emitter Voltage (V)<br>Safe Operating Area Safe Operating Area<br>80 T =25 o C<br>70 50mm x 50mm FR-4 AMB Tin Lo 100 NTT, Single Pulse TAMB=25oC |<br>2oz Cu oo iNT ee 50mm x 50mm FR-4 HI)<br>60<br>2oz Cu<br>50 D=0.5 M0 a Saiinstiimtiiath |<br>eee ‘i W it SN |<br>40<br>eet LS 10<br>30<br>D=0.2 Single Pulse<br>20 pA<br>LIT D=0.05 gs tl tHCoS<br>10 eee= im grr cll aS ee ET CC TT CnTSCHC -<br>D=0.1<br>0 saci 1 CUT UE TTI ETE Ta<br>100μ100 1m 10m 100m 1 10 100 1k 100μ100 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>1.6<br>1.4 —~_<br>50mm x 50mm FR-4, 2oz Cu<br>1.2 QO<br>Fo NN<br>25mm x 25mm FR-4<br>1.0 PNK<br>0.8 NN—— = WZ Z 2oz Cu<br>0.6<br>0.4<br>Ne<br>0.20.0 15mm x 15mm FR-4, oz Cu NeSN<br>0 20 40 60 80 100 120 140 160<br> Temperature (oC)<br>Derating Curve<br>  Collector Current (A)C  Collector Current (A)C<br>I  I<br>C/W)<br>o<br> Maximum Power (W)<br>Thermal Resistance (<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


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## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Characteristic**<br>~~———~~|**Symbol**<br>~~———~~|**Min**<br>~~———~~|**Typ**<br>~~———~~|**Max**<br>~~———~~|**Unit**<br>~~———~~|**Test Condition**<br>~~———~~|
|---|---|---|---|---|---|---|
|**OFF CHARACTERISTICS**<br>~~———~~|||||||
|Collector-Base Breakdown Voltage<br>~~———~~|BVCBO<br>~~———~~|450<br>~~———~~|550<br>~~———~~|—<br>~~———~~|V<br>~~———~~|IC= 100µA<br>~~———~~|
|Collector-Emitter Breakdown Voltage<br>(Forward Blocking)<br>~~———~~|BVCEX<br>~~———~~|450<br>~~———~~|550<br>~~———~~|—<br>~~———~~|V<br>~~———~~|IC= 100µA, RBE≤1kΩ or<br>-1V < VBE< 0.25V<br>~~———~~|
|Collector-Emitter Breakdown Voltage<br>(Base Open) (Note11)<br>~~ee~~|BVCEO<br>~~ee~~|400<br>~~ee~~|500<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|IC= 10mA<br>~~ee~~|
|Emitter-Base Breakdown Voltage<br>~~TT~~|BVEBO<br>~~TT~~|7<br>~~TT~~|8.1<br>~~TT~~|—<br>~~TT~~|V<br>~~TT~~|IE= 100µA<br>~~TT~~|
|Emitter-Collector Breakdown Voltage<br>(Reverse Blocking)<br>~~TT~~|BVECX<br>~~TT~~|6<br>~~TT~~|8<br>~~TT~~|—<br>~~TT~~|V<br>~~TT~~|IE= 100µA, RBC≤1kΩ or<br>-0.25V < VBC< 0.25V<br>~~TT~~|
|Emitter-Collector Breakdown Voltage<br>(Base Open)<br>~~ee~~|BVECO<br>~~ee~~|6<br>~~ee~~|8.5<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|IE= 100µA<br>~~ee~~|
|Collector-Base Cutoff Current<br>~~re~~|ICBO<br>~~re~~|—<br>~~re~~|<1<br>—<br>~~re~~|50<br>20<br>~~re~~|nA<br>µA<br>~~re~~|VCB= 360V<br>VCB= 360V,TA= +100°C<br>~~re~~|
|Collector-Emitter Cutoff Current<br>~~a~~|ICEX<br>~~a~~|—<br>~~a~~|<1<br>~~a~~|100<br>~~a~~|nA<br>~~a~~|VCE= 360V, RBE≤1kΩ<br>-1V < VBE<0.25V<br>~~a~~|
|Emitter-Base Cutoff Current<br>~~a~~|IEBO<br>~~a~~|—<br>~~a~~|<1<br>~~a~~|50<br>~~a~~|nA<br>~~a~~|VEB= 5.6V<br>~~a~~|
|**ON CHARACTERISTICS**(Note 11)<br>~~e~~<br>~~ee~~|||||||
|Static Forward Current Transfer Ratio<br>~~e~~<br>~~ee~~|hFE<br>~~e~~~~**e**~~<br>~~e~~<br>~~ee~~|90<br>100<br>10<br>~~**e**~~<br>~~ee~~|165<br>180<br>20<br>~~**e**~~<br>~~ee~~<br>~~ee~~|300<br>~~**e**~~<br>~~ee~~|—<br>~~**e**~~<br>~~ee~~|IC= 1mA, VCE= 5V<br>IC= 50mA, VCE= 5V<br>IC= 500mA,VCE= 5V<br>~~**e**~~<br>~~ee~~|
|Collector-Emitter Saturation Voltage<br>~~ee~~|VCE(SAT)<br>~~e~~<br>~~ee~~|—<br>~~ee~~|70<br>50<br>120<br>125<br>~~ee~~<br>~~ee~~|85<br>70<br>170<br>175<br>~~ee~~|mV<br>~~ee~~|IC= 20mA, IB= 1mA<br>IC= 50mA, IB= 5mA<br>IC= 300mA, IB= 30mA<br>IC= 500mA,IB= 100mA<br>~~ee~~|
|Base-Emitter Saturation Voltage<br>~~ee~~|VBE(SAT)<br>~~ee~~|—<br>~~ee~~|865<br>~~ee~~|950<br>~~ee~~|mV<br>~~ee~~|IC=500mA,IB= 100mA<br>~~ee~~|
|Base-Emitter On Voltage<br>~~ee~~|VBE(ON)<br>~~ee ~~|—<br> ~~ee~~|800<br>~~ee~~|900<br>~~ee~~|mV<br>~~ee~~|IC= 500mA,VCE= 10V<br>~~ee~~|
|**SMALL SIGNAL CHARACTERISTICS**(Note 11)<br>~~Sa~~|||||||
|Transition Frequency<br>~~Sa~~|fT<br>~~Sa~~|—<br>~~Sa~~|40<br>~~Sa~~|—<br>~~Sa~~|MHz<br>~~Sa~~|IC= 10mA, VCE= 20V,<br>f = 20MHz<br>~~Sa~~|
|Output Capacitance<br>~~Sa~~<br>~~——————~~|COBO<br>~~Sa~~<br>~~——————~~|—<br>~~Sa~~|8<br>~~Sa~~|10<br>~~Sa~~|pF<br>~~Sa~~<br>~~ee~~|VCB= 20V,f = 1MHz<br>~~Sa~~<br>~~ee~~|
|DelayTime<br>~~——————~~|tD<br>~~——————~~|—|100|—|ns<br>~~ee~~|VCC= 100V,<br>IC= 100mA,<br>IB1=10mA<br>IB2= -20mA<br>~~ee~~|
|Rise Time<br>~~——————~~|tR<br>~~——————~~|—|52|—|ns<br>~~ee~~||
|Storage Time<br>~~——————~~|tS<br>~~——————~~|—|3122|—|ns<br>~~ee~~||
|Fall Time<br>~~——————~~|tF<br>~~——————~~|—|240|—|ns<br>~~ee~~||



Note: 11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. 

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## LOUES. 

## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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**----- Start of picture text -----**<br>
3.0<br>TAMB=25 o C ee ee I C /I B =10 Bee<br>1 ell IC/IB=50 2.5 150 o C |<br>_—SSSee)Roeee Sor I C /I B =20 enyI)cooeaeseer eeeenl)neey ee =  EE 2.01.5 H+TT 100oC <THfi=<br>100m Py AATY 1.0 e s re 25oC S|Th<br>IC/IB=10<br>Oo — PTT pt hi<br>a 0.5 eens<br>Tr I C /I B =5 || Ae -55 o C<br>10m I ETA TTI 0.0 eese eesneey)/<br>1m 10m 100m 1 10m 100m 1<br>IC   Collector Current (A) IC   Collector Current (A)<br>V  v I V  v I<br>CE(SAT) C CE(SAT) C<br>360 1.0<br>1.6 150 o C a a V CE =10V 320 IC/IB=10 -55oC 25oC | Le<br>1.4 CTTT 280 0.8 ea!rel<br>1.2 ONT 100 o C 240 al] | | Le]<br>1.0 Pe 200 Tie<br>0.6<br>0.8 o 160<br>saeeaeaica 25 C Canta etl<br>0.6 elasSooo " eee 120 amNNPcaecl<q 150oC<br>0.4 -55oC PE TAA 80 0.4 Pee— oe 100oC ell<br>0.20.0 tematicPate TA 400 0.2 5TAee lll<br>1m | 10m 100m 1 1m 10m PT 100m<br>IC   Collector Current (A) IC   Collector Current (A)<br>h  v I V  v I<br>FE C BE(SAT) C<br>V =10V<br>1.0 CE<br>-55oC 25oC<br>Co<br>LT<br>0.8<br>ao|<br>0.6<br>ne<br>err eerCereel<br>0.4 150 o C<br>a 100oC ae<br>0.2 coerSTHCw TOI<br>1m 10m 100m 1<br>IC   Collector Current (A)<br>V  v I<br>BE(ON) C<br>  (V)   (V)<br>CE(SAT) CE(SAT)<br>V V<br>)<br>FE<br>  (V)<br>BE(SAT)<br>V<br>Normalised Gain<br> Typical Gain (h<br> (V)<br>BE(ON)<br>V<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT23F** 

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**----- Start of picture text -----**<br>
D<br>c<br>b<br>L1<br>to tf a SOT23F<br>Dim  Min  Max  Typ<br>| E1 E ——— A  0.80 1.00 0.90<br>A1  0.00 0.10 0.01<br>b 0.35 0.50 0.44<br>c  0.10 0.20 0.16<br>D  2.80 3.00 2.90<br>n nip b e l e  0.95 REF<br>A1 e1  1.90 REF<br>e1 E  2.30 2.50 2.40<br>e E1  1.50 1.70 1.65<br>k  1.20 -  -<br>L L  0.30 0.65 0.50<br>aa ——<br>L1  0.30 0.50 0.40<br>R  0.05 0.15 -<br>A<br>k All Dimensions in mm<br>a<br>R<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT23F** 

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X C<br>Y1<br>OO<br>Y<br>us<br>**----- End of picture text -----**<br>


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Value<br>Dimensions<br>(in mm)<br>C  0.95<br>X  0.80<br>Y  1.110<br>Y1  3.000<br>8 £e<br>—-—<br>**----- End of picture text -----**<br>


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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

**www.diodes.com** 

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- [Supplier page](https://es.farnell.com/diodes-inc/zxtn08400bffta/transistor-npn-sot-23f/dp/1471195)
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