# Bipolar (BJT) Single Transistor, NPN, 45 V, 4 A, 2 W, SOT-23F, Surface Mount

![Product image](https://novapart.co/image/farnell:3943373RL/)

**URL**: https://novapart.co/products/ZXTN07045EFFTA/bipolar-bjt-single-transistor-npn-45-v-4-a-2-w-sot
**SKU**: ZXTN07045EFFTA
**Manufacturer**: DIODES INC.
**Price**: €0.2170
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 190MHz |
| Transistor Case Style | SOT-23F |
| Dc Current Gain Hfe Min | 70hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 4A |
| Collector Emitter Voltage Max | 45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943373RL/)

**ZXTN07045EFF** ~~7~~ 

## **45V NPN LOW SATURATION TRANSISTOR** 

## **Features** 

## **Mechanical Data** 

- BVCEO > 45V 

- IC = 4A Continuous Collector Current 

- Low Saturation Voltage VCE(sat) < 80mV @ 1A 

- RCE(sat) = 50mΩ 

- hFE Characterised up to 4A 

- High hFE  Min 400 @ 1A 

- 1.5W Power Dissipation 

   - Case: SOT23F 

   - Case Material: Molded Plastic. “Green” Molding Compound UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 

   - Weight: 0.012 grams (Approximate) 

- Complementary PNP Type: ZXTP07040DFF 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 and 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description** 

## **Applications** 

- Boost Converters 

This low voltage NPN transistor has been designed for applications requiring high gain and very low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. 

- MOSFET and IGBT Gate Drivers 

- Lamp and Relay Driver 

- Motor Drive 

- Siren Driver 

**==> picture [377 x 127] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT23F  C<br>E<br>B C<br>B<br>E<br>Top View<br>Top View  Device Symbol  Pin Configuration<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|
|---|---|---|---|---|---|
|||||||
|**Product**|**Compliance**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|ZXTN07045EFFTA|AEC-Q101|1D4|7|8|3,000|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

SOT23F 

**==> picture [34 x 14] intentionally omitted <==**

**----- Start of picture text -----**<br>
1D4<br>**----- End of picture text -----**<br>


1D4 = Product Type Marking Code YW = Date Code Marking Y = Year : 0~9 W = Week : A~Z : 1~26 a~z : 27~52 z represents 52 & 53 week 

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**ZXTN07045EFF** 

## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|45|V|
|Collector-Emitter Voltage|VCEO|45|V|
|Emitter-Collector Voltage (Reverse Blocking)|VECO|6|V|
|Emitter-Base Voltage|VEBO|7|V|
|Continuous Collector Current|IC|4|A|
|Peak Pulse Current|ICM|6|A|
|Base Current|IB|1|A|



**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation<br>Linear Derating Factor|(Note 5)|PD|0.84<br>6.72|W<br>mW/C|
||(Note 6)||1.34<br>10.72||
||(Note 7)||1.50<br>12.0||
||(Note 8)||2.0<br>16.0||
|Thermal Resistance, Junction to Ambient|(Note 5)|RθJA|149|C/W|
||(Note 6)||93||
||(Note 7)||83||
||(Note 8)||60||
|Thermal Resistance, Junction to Lead|(Note 9)|RθJL|43.77|C/W|
|Operating and Storage Temperature Range||TJ,TSTG|-55 to +150|C|



## **ESD Ratings** (Note 10) 

|**ESD Ratingsgss **(Note 10)|**ESD Ratingsgss **(Note 10)|**ESD Ratingsgss **(Note 10)|**ESD Ratingsgss **(Note 10)|**ESD Ratingsgss **(Note 10)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge - Human BodyModel|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|400|V|C|



- Notes: 5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 

   6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 

   7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 

   8. Same as Note 7, whilst measured at t < 5 seconds. 

   9. Thermal resistance from junction to solder-point (at the end of the collector lead). 

   10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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**ZXTN07045EFF** 

## **Thermal Characteristics and Derating Information** 

**==> picture [440 x 347] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.6<br>10 V CE(sat) 50mmX50mm FR4, 2oz Cu 1.4<br>Limited 50mmX50mm FR4, 2oz Cu<br>eH 1.2 =Neee<br>1 1.0<br>25mmX25mm<br>DC 0.8 FR4, 2oz Cu<br>1s 0.6 N<br>100m 100ms<br>0.4<br>Single Pulse 10ms 1ms 15mmX15mm<br>T =25 o C 100s 0.2 FR4, 1oz Cu<br>amb<br>10m | 0.0 OSA<br>100m 1 10 0 20 40 60 80 100 120 140 160<br>VCE  Collector-Emitter Voltage (V)  Temperature (oC)<br>Safe Operating Area Derating Curve<br>80 T =25 o C<br>amb 100<br>50mmX50mm FR4,  Single Pulse<br>2oz Cu T =25oC<br>60 amb<br>50mmX50mm FR4,<br>D=0.5 2oz Cu<br>Ha , ol a eal ian ee tea<br>40 a all y fi y CHRUA N T |<br>10 eS TT<br>D=0.2<br>20 “Ye Single Pulse PeONE<br>_—_ kd<br>pA su D=0.05 TTI TIT PITTITTT<br>D=0.1<br>0 ey ogee | TT ail 1 B01 PTE 000 CITI AIMEaETATiPT<br>100μµ  1m 10m 100m 1 10 100 1k 100μµ  1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>C/W)<br>o<br>  Collector Current (A)<br>IC<br> Max Power Dissipation (W)<br> Maximum Power (W)<br>Thermal Resistance (<br>**----- End of picture text -----**<br>


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**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

||||||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~a~~|**Symbol**<br>~~a~~|**Min**<br>~~a~~|**Typ**<br>~~a~~|**Max**<br>~~a~~|**Unit**<br>~~a~~|**Test Condition**<br>~~a~~|
|**OFF CHARACTERISTICS**<br>~~a~~|||||||
|Collector-Base Breakdown Voltage<br>~~a~~<br>~~Ce~~|BVCBO<br>~~a~~<br>~~es~~<br>|45<br>~~a~~<br>~~es~~<br>|160<br>~~a~~<br>~~tees~~<br>|—<br>~~a~~<br>~~es~~<br>|V<br>~~a~~<br>~~es~~<br>|IC= 100µA<br>~~a~~<br>|
|Collector-Emitter Breakdown Voltage<br>(Base Open) (Note 11)<br>~~ee~~<br>~~Ce~~|BVCEO<br>~~ee~~<br>~~es~~<br>|45<br>~~ee~~<br>~~es~~<br>|60<br>~~ee~~<br>~~tees~~<br>|—<br>~~ee~~<br>~~es~~<br>|V<br>~~ee~~<br>~~es~~<br>|IC= 10mA<br>~~ee~~<br>|
|Emitter-Base Breakdown Voltage<br>~~Ce~~|BVEBO<br>~~es~~<br>|7<br>~~es~~<br>|8.3<br>~~tees~~<br>|—<br>~~es~~<br>|V<br>~~es~~<br>|IE= 100µA<br>|
|Emitter-Collector Breakdown Voltage<br>(Reverse Blocking)<br>~~CeI~~|BVECX<br>~~es ~~<br>~~I~~|6<br> ~~es ~~<br>~~I~~|8.2<br> ~~tees ~~<br>~~I~~|—<br> ~~es ~~<br>~~I~~|V<br> ~~es~~<br>~~I~~|IE= 100µA; RBC< 1kΩ or<br>-0.25V < VBC< 0.25V<br>~~I~~|
|Emitter-Collector Breakdown Voltage<br>(Base Open)<br>~~TELL~~|BVECO<br>~~TELL~~|6<br>~~TELL~~|7.2<br>~~TELL~~|—<br>~~TELL~~|V<br>~~TELL~~|IE= 100µA<br>~~TELL~~|
|Collector-Base Cut-Off Current<br>~~OO~~|ICBO<br>~~OO~~|—<br>~~OO~~<br>~~GO~~|<1<br>—<br>~~OO~~<br>~~GO~~|50<br>20<br>~~OO~~<br>~~GO~~|nA<br>µA<br>~~OO~~<br>~~(GO~~|VCB= 35V<br>VCB= 35V,TA= +100°C<br>~~OO~~<br>~~(GO~~|
|Emitter-Base Cut-Off Current<br>~~GO~~|IEBO<br>~~GO~~|—<br>~~GO~~<br>~~GO~~|<1<br>~~GO~~<br>~~GO~~|50<br>~~GO~~<br>~~GO~~|nA<br>~~GO~~<br>~~(GO~~|VEB= 5.6V<br>~~GO~~<br>~~(GO~~|
|**ON CHARACTERISTICS(Note 11)**<br>~~GO~~<br>~~GO~~<br>~~GO (GO~~|||||||
|Static Forward Current Transfer Ratio|hFE|500<br>400<br>250<br>70|800<br>710<br>530<br>125|1500<br>—<br>—<br>—|—|IC= 100mA, VCE= 2V<br>IC= 1A, VCE= 2V<br>IC= 2A, VCE= 2V<br>IC= 4A,VCE= 2V|
|Collector-Emitter Saturation Voltage|VCE(sat)|—|45<br>160<br>60<br>200<br>230|70<br>230<br>80<br>270<br>280|mV|IC= 0.1A, IB= 0.5mA<br>IC= 1A, IB= 5mA<br>IC= 1A, IB= 100mA<br>IC= 2A, IB= 20mA<br>IC= 4A,IB= 200mA|
|Base-Emitter Saturation Voltage|VBE(sat)|—|1000|1100|mV|IC= 4A,IB= 200mA|
|Base-Emitter On Voltage|VBE(on)|—|875|1000|mV|IC= 4A,VCE= 2V|
|**SMALL SIGNAL CHARACTERISTICS**<br>~~LLL~~|||||||
|Transition Frequency<br>~~LLL~~<br>~~———_——~~|fT<br>~~LLL~~<br>~~a~~|150<br>~~LLL~~|190<br>~~LLL~~|—<br>~~LLL~~|MHz<br>~~LLL~~|IC= 50mA, VCE= 5V,<br>f = 50MHz<br>~~LLL~~|
|Input Capacitance<br>~~———~~<br>~~———_——~~|Cibo<br>~~———~~<br>~~a~~|—<br>~~———~~|225<br>~~———~~|—<br>~~———~~|pF<br>~~———~~|VEB= 0.5V,f = 1MHz<br>~~———~~|
|Output Capacitance<br>~~———~~<br>~~———_——~~|Cobo<br>~~———~~<br>~~a~~|—<br>~~———~~|18.4<br>~~———~~|25<br>~~———~~|pF<br>~~———~~|VCB= 10V,f = 1MHz<br>~~———~~|
|DelayTime<br>~~———_——~~|td<br>~~a~~|—|22.3|—|ns|VCC= 10V,<br>IC= 500mA,<br>IB1= IB2= 50mA|
|Rise Time<br>~~———_——~~|tr<br>~~a~~|—|10.6|—|ns||
|Storage Time<br>~~———_——~~<br>~~SS~~|ts<br>~~a~~<br>~~SS~~|—<br>~~SS~~|613<br>~~SS~~|—<br>~~SS~~|ns<br>~~SS~~||
|Fall Time<br>~~———_——~~<br>~~SS~~|tf<br>~~a~~<br>~~SS~~|—<br>~~SS~~|146<br>~~SS~~|—<br>~~SS~~|ns<br>~~SS~~||



Note: 11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. 

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**ZXTN07045EFF** 

## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

**==> picture [443 x 549] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 3.0<br>o<br>Tamb=25 C I C /I B =200 2.5 I C /I B =100<br>et PH A |<br>100m 2.0 o<br>IC/IB=100 150 C<br>a eM ee<br>1.5 100 o C<br>10m ee IC/IB=50 1.0 TM 25 o C SCH Ii<br>pr a NT<br>ee I C /I B =10 0.5 HI<br>-55 o C<br>1m SEPU ET ce UIT | 0.0 Sectane| ||<br>1m 10m 100m 1 10 10m 100m 1 10<br>IC   Collector Current (A) V  v I IC   Collector Current (A) V  v I<br>CE(SAT) C CE(SAT) C<br>1.0<br>1.6 150 o C V CE =2V 13001200 IC/IB=100 -55 o C 25 o C<br>1.4<br>AerpT ee 1100 0.8 Slyl <uuussee q N | Lr e nr cer 77<br>1.2 nt 1000 TT 7 |<br>1.00.8 cueerrr 10025 oo CC HT e re,S 900800700600 0.6 peTtPmoo,ooII |LaaTNY pe |AA|||<br>0.6 EeeMTctiemmnatia anitTn 500 p=eeBer areath.ll<br>0.4 ere -55 o C HE ETE NAATATT 400300 0.4 |aPatil = all o nllll 150oC |<br>0.2 ee ettiiesmtiiion Wim 200 alll 100 C lll |<br>PEE eH CN 100 a<br>0.0 PCE sis S| 0 0.2 ell TfL<br>1m 10m 100m 1 10 1m 10m 100m 1<br>IC   Collector Current (A) h  v I IC   Collector Current (A) V  v I<br>FE C BE(SAT) C<br>1.0 V CE =2V 25oC<br>-55oC<br>pT Sn<br>ee<br>0.8<br>pe ff<br>eer en<br>0.6<br>EE TT | AIL<br>eea aa A<br>0.4 o<br>pe cA 100 C<br>ee err o Hil<br>150 C<br>0.2 ttt Till TT<br>1m 10m 100m 1<br>IC   Collector Current (A) V  v I<br>BE(ON) C<br>  (V)   (V)<br>CE(SAT) CE(SAT)<br>V V<br>)<br>FE<br>  (V)<br>BE(SAT)<br>V<br>Normalised Gain<br> Typical Gain (h<br> (V)<br>BE(ON)<br>V<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT23F** 

**==> picture [406 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
D c<br>b<br>te L1 tf<br>SOT23F<br>Dim  Min  Max  Typ<br>| ——— A  0.80 1.00 0.90<br>E1 E<br>b  0.35 0.50 0.44<br>c  0.10 0.20 0.16<br>D  2.80 3.00 2.90<br>e 0.95 REF<br>= b a e1  0.190 REF<br>E  2.30 2.50 2.40<br>e1<br>ae . + E1  1.50 1.70 1.65<br>e k  1.20 -  -<br>L  0.30 0.65 0.50<br>ny Th 4 L + L1  0.30 0.50 0.40<br>R  0.05 0.15 -<br>A All Dimensions in mm<br>k<br>a<br>R<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT23F** 

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**----- Start of picture text -----**<br>
X C<br>tr<br>Y1<br>oo<br>Y<br>o<br>**----- End of picture text -----**<br>


**==> picture [94 x 79] intentionally omitted <==**

**----- Start of picture text -----**<br>
Value<br>Dimensions<br>(in mm)<br>C  0.95<br>X  0.80<br>Y  1.110<br>- Y1  3.000<br>**----- End of picture text -----**<br>


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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

**www.diodes.com** 

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- [Supplier page](https://es.farnell.com/diodes-inc/zxtn07045effta/trans-npn-45v-4a-150deg-c-1-5w/dp/3943373RL)
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