# Bipolar Transistor Array, Dual NPN, 50 V, 4 A, 1.7 W

![Product image](https://novapart.co/image/farnell:3944376/)

**URL**: https://novapart.co/products/ZXTD619MCTA/bipolar-transistor-array-dual-npn-50-v-4-a-17-w
**SKU**: ZXTD619MCTA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT
**Price**: €0.2820
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Product Range | - |
| Qualification | - |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | Dual NPN |
| Power Dissipation Npn | 1.7W |
| Power Dissipation Pnp | - |
| Transistor Case Style | DFN3020B |
| Transition Frequency Npn | 165MHz |
| Transition Frequency Pnp | - |
| Operating Temperature Max | 150°C |
| Dc Current Gain Hfe Min Npn | 40hFE |
| Dc Current Gain Hfe Min Pnp | - |
| Continuous Collector Current Npn | 4A |
| Continuous Collector Current Pnp | - |
| Collector Emitter Voltage Max Npn | 50V |
| Collector Emitter Voltage Max Pnp | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3944376/)

**A Product Line of Diodes Incorporated** | ZETEX **ZXTD619MC** ~~[sd~~ 

## LrOJES. 

## **DUAL 50V NPN LOW SATURATION SWITCHING TRANSISTOR** 

## **Features and Benefits** 

- BVCEO > 50V 

- IC = 4A Continuous Collector Current 

- Low Saturation Voltage (100mV max @  1A) 

- RSAT = 68mΩ for Low Equivalent On Resistance 

- hFE specified up to 6A for high current gain holds up 

- Dual NPN saving footprint and component count 

- Low profile 0.8mm high package for thin applications 

- RθJA efficient, 40% lower than SOT26 

## **Mechanical Data** 

   - Case: DFN3020B-8 

   - Case Material: Molded Plastic. “Green” Molding Compound. 

   - Terminals: Pre-Plated NiPdAu leadframe. 

   - UL Flammability Rating 94V-0 

   - Nominal package height: 0.8mm 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Weight: 0.013 grams (approximate) 

- 2 

- • 6mm footprint, 50% smaller than TSOP6 and SOT26 

## **Applications** 

- **Lead-Free, RoHS Compliant (Note 1)** 

- **Halogen and Antimony Free. “Green” Device (Note 2)** 

- DC – DC Converters 

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• Qualified to AEC-Q101 Standards for High Reliability   DC – DC Converters<br>• MOSFET gate drivers<br>• Charging circuits<br>• Motor Control<br>• Power switches<br>• Portable applications<br>DFN3020B-8  C2 C1 C2 C2 C1 C1<br>B2 B1 C2 C1<br>© €<br>we Py} E2 LI B2 LI E1 B1 Pin 1<br>E2 E1<br>Top View  Bottom View  NPN Transistor  NPN Transistor  Bottom View<br>Pin Out<br>Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 3) 

|**Product**|**Marking**|**Reel size (inches)**|**Tape width (mm)**|**Quantity per reel **|
|---|---|---|---|---|
|ZXTD619MCTA|DCC|7|8|3,000|



Notes: 1. No purposefully added lead. 

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 

3. For Packaging Details, go to our website at http://www.diodes.com. 

## **Marking Information** 

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**----- Start of picture text -----**<br>
DCC<br>**----- End of picture text -----**<br>


DCC = Product type Marking Code Top view, dot denotes Pin 1 

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ZXTD619MC Document Number DS31932 Rev. 3 - 2 

January 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** | **ZXTD619MC** | 

**Maximum Ratings** @TA = 25°C unless otherwise specified 

**==> picture [492 x 75] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||
|---|---|---|---|
|Parameter|Symbol|Limit|Unit|
|Collector-Base Voltage|VCBO|100|V|
|Collector-Emitter Voltage|VCEO|50|V|
|Emitter-Base Voltage|VEBO|7|V|
|Peak Pulse Current|ICM|6|A|
|Continuous Collector Current (Note 4 and 7)|IC|4|A|
|Base Current|IB|1|A|

**----- End of picture text -----**<br>


## **Thermal Characteristics** @TA = 25°C unless otherwise specified 

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||||||
|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|1.5|
|(Notes 4 & 7)|12|
|2.45|
|Power Dissipation|(Notes 5 & 7)|19.6|W|
|Linear Derating Factor|PD|1.13|mW/°C|
|(Notes 6 & 7)|
|8|
|1.7|
|(Notes 6 & 8)|13.6|
|(Notes 4 & 7)|83.3|
|(Notes|5|& 7)|51.0|
|Thermal Resistance, Junction to Ambient|(Notes 6 & 7)|RθJA|111|°C/W|
|(Notes 6 & 8)|73.5|
|Thermal Resistance, Junction to Lead|(Notes 7 & 9)|RθJL|17.1|
|Operating and Storage Temperature Range|TJ, TSTG|-55 to +150|°C|

**----- End of picture text -----**<br>


Notes: 4. For a dual device surface mounted on 28mm x 28mm (8cm[2] ) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition.  The heatsink is split in half with the exposed collector pads connected to each half. 

5. Same as note (4), except the device is measured at t <5 sec. 

6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm[2] ) FR4 PCB with high coverage of single sided 1oz copper. 

7. For a dual device with one active die. 

8. For dual device with 2 active die running at equal power. 

9. Thermal resistance from junction to solder-point (at the end of the collector lead). 

2 of 7 **www.diodes.com** 

ZXTD619MC Document Number DS31932 Rev. 3 - 2 

January 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXTD619MC** 

## **Thermal Characteristics** 

3 of 7 **www.diodes.com** 

ZXTD619MC Document Number DS31932 Rev. 3 - 2 

January 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** | **ZXTD619MC** | 

## **Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol **|**Min**|**Typ**|**Max **|**Unit**|**Test Condition **|
|Collector-Base Breakdown Voltage|V(BR)CBO|100|190|-|V|IC= 100µA|
|Collector-Emitter Breakdown Voltage(Note 10)|V(BR)CEO|50|65|-|V|IC= 10mA|
|Emitter-Base Breakdown Voltage|V(BR)EBO|7|8.2|-|V|IE= 100µA|
|Collector Cutoff Current|ICBO|-|-|100|nA|VCB= 80V|
|Emitter Cutoff Current|IEBO|-|-|100|nA|VEB= 6V|
|Collector Emitter Cutoff Current|ICES|-|-|100|nA|VCES= 40V|
|Static Forward Current Transfer Ratio<br>(Note 10)|hFE|200<br>300<br>200<br>100<br>-|400<br>450<br>400<br>225<br>40|-<br>-<br>-<br>-<br>-|-<br>-<br>-<br>-<br>-|IC= 10mA, VCE= 2V<br>IC= 200mA, VCE= 2V<br>IC= 1A, VCE= 2V<br>IC= 2A, VCE= 2V<br>IC= 6A,VCE = 2V|
|Collector-Emitter Saturation Voltage<br>(Note 10)|VCE(sat)|-<br>-<br>-<br>-<br>-<br>-|10<br>70<br>145<br>115<br>225<br>270|20<br>100<br>200<br>220<br>300<br>320|mV<br>mV<br>mV<br>mV<br>mV<br>mV|IC=0.1A, IB= 10mA<br>IC= 1A, IB= 50mA<br>IC= 1A, IB= 10mA<br>IC= 2A, IB= 50mA<br>IC= 3A, IB= 100mA<br>IC= 4A,IB = 200mA|
|Base-Emitter Turn-On Voltage(Note 10)|VBE(on)|-|0.94|1.00|V|IC= 4A,VCE = 2V|
|Base-Emitter Saturation Voltage(Note 10)|VBE(sat)|-|1.00|1.07|V|IC= 4A,IB= 200mA|
|Output Capacitance|Cobo|-|12|20|pF|VCB= 10V. f = 1MHz|
|Transition Frequency|fT<br>~~ee~~|100<br>~~ee~~|165<br>~~eee~~|-<br>~~eee~~|MHz<br>~~eee~~|VCE= 10V, IC= 50mA,<br>f = 100MHz|
|Turn-on Time<br>~~ee~~|ton<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|170<br>~~ee~~<br>~~eee~~|-<br>~~ee~~<br>~~eee~~|ns<br>~~ee~~<br>~~eee~~|VCC= 10V, IC= 1A<br>IB1= IB2= 10mA<br>~~ee~~|
|Turn-off Time<br>~~ee~~|toff<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|750<br>~~ee~~<br>~~eee~~|-<br>~~ee~~<br>~~eee~~|ns<br>~~ee~~<br>~~eee~~||



Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2% 

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ZXTD619MC Document Number DS31932 Rev. 3 - 2 

January 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** | **ZXTD619MC** | 

## LOLS. 

## **Typical Electrical Characteristics** 

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**----- Start of picture text -----**<br>
0.25<br>Tamb=25°C I C /I B =50<br>0.20<br>WAZ |<br>100m IC/IB=100 0.15 100°C<br>25°C<br>10m IC/IB=50 0.10<br>a ee VY -55°C<br>ee IC/I TT B=10 0.05 CHK CTS<br>SESH<br>1m1m PT UUIIT 10m PEIag 100m PEIced 1 PTT 10 0.001m EEeeCTT 10m 100m 1 10<br>IC   Collector Current (A) IC   Collector Current (A)<br>V  v I V  v I<br>CE(SAT) C CE(SAT) C<br>6 30 1.0<br>1.2 V CE =2V 5 40 IC/IB=50<br>100°C<br>1.0 4 50 0.8<br>Eisen easel<br>-55°C<br>0.8 25°C 3 60<br>ST ell<br>HEH tH ce<br>0.6 2 70 0.6 25°C<br>0.4 EH -55°C 1 80 pt<br>100°C<br>0.2 cree ee 9 0 0.4 PA Pa<br>PERETTI ee Nt rr<br>0.0 FH HAH 0 ceeTAT [CHET]<br>1m 10m 100m 1 10 1m 10m 100m 1 10<br>IC   Collector Current (A) IC   Collector Current (A)<br>h  v I V  v I<br>FE C BE(SAT) C<br>1.0<br>V =2V<br>CE<br>0.8 Ca<br>ylFeo<br>-55°C<br>0.6 Fyuy CoATTt<br>25°C<br>ermTT<br>Fen UT<br>0.4 100°C<br>1SeT<br>1m 10m 100m 1 10<br>IC   Collector Current (A)<br>V  v I<br>BE(ON) C<br>  (V)   (V)<br>CE(SAT) CE(SAT)<br>V V<br>)<br>FE<br>  (V)<br>BE(SAT)<br>V<br>Normalised Gain<br> Typical Gain (h<br> (V)<br>BE(ON)<br>V<br>**----- End of picture text -----**<br>


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ZXTD619MC Document Number DS31932 Rev. 3 - 2 

January 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** | **ZXTD619MC** | 

## **Package Outline Dimensions** 

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DFN3020B-8<br>A A3 Dim Min  Max  Typ<br>A  0.77 0.83 0.80<br>A1  0 0.05 0.02<br>A1<br>Hesecl FLEE A3 -  -  0.15<br>b 0.25 0.35 0.30<br>D<br>D  2.95 3.075 3.00<br>D2  0.82 1.02  0.92<br>D4  1.01 1.21  1.11<br>e -  -  0.65<br>D4 D4 E  1.95 2.075 2.00<br>Too) =  EEE<br>D2 E2  0.43 0.63 0.53<br>E E2 L  0.25 0.35 0.30<br>Z  -  -  0.375<br>Z b e<br>All Dimensions in mm<br>L eT 7 Pod<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

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C X<br>Y1<br>G1<br>G co t i o<br>Y2<br>Y<br>EI<br>X1<br>[EU UU<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|0.650|
|**G**|0.285|
|**G1 **|0.090|
|**X**|0.400|
|**X1**|1.120|
|**Y**|0.730|
|**Y1**|0.500|
|**Y2**|0.365|



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ZXTD619MC Document Number DS31932 Rev. 3 - 2 

January 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** | **ZXTD619MC** | 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2011, Diodes Incorporated 

**www.diodes.com** 

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ZXTD619MC Document Number DS31932 Rev. 3 - 2 

January 2011 © Diodes Incorporated 



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---

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