# Bipolar Transistor Array, NPN, PNP, 80 V, 80 V, 4 A, 4 A, 1.7 W

![Product image](https://novapart.co/image/farnell:3944373RL/)

**URL**: https://novapart.co/products/ZXTC6720MCTA/bipolar-transistor-array-npn-pnp-80-v-4-a-17-w
**SKU**: ZXTC6720MCTA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT
**Price**: €0.2360
**Stock**: 10+
**Lead Time**: 126 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Product Range | - |
| Qualification | - |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN, PNP |
| Power Dissipation Npn | 1.7W |
| Power Dissipation Pnp | 1.7W |
| Transistor Case Style | DFN3020B |
| Transition Frequency Npn | 160MHz |
| Transition Frequency Pnp | 180MHz |
| Operating Temperature Max | 150°C |
| Dc Current Gain Hfe Min Npn | 40hFE |
| Dc Current Gain Hfe Min Pnp | 40hFE |
| Continuous Collector Current Npn | 4A |
| Continuous Collector Current Pnp | 4A |
| Collector Emitter Voltage Max Npn | 80V |
| Collector Emitter Voltage Max Pnp | 80V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3944373RL/)

**A Product Line of Diodes Incorporated ZXTC6720MC** | 

## **DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION** 

## **Features and Benefits** 

NPN Transistor 

   - BVCEO > 80V 

   - IC = 3.5A Continuous Collector Current 

   - Low Saturation Voltage (185mV max @ 1A) 

- RSAT = 68mΩ for a low equivalent On-Resistance 

- PNP Transistor 

   - BVCEO > -70V 

   - IC = -2.5A Continuous Collector Current 

## **Mechanical Data** 

   - Case: DFN3020B-8 

   - Case Material: Molded Plastic. “Green” Molding Compound. 

   - Terminals: Pre-Plated NiPdAu leadframe. 

   - Nominal package height: 0.8mm 

   - UL Flammability Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Weight: 0.013 grams (approximate) 

- Low Saturation Voltage (-220mV max @ -1A) 

- RSAT = 117mΩ for a low equivalent On-Resistance 

## **Applications** 

- hFE characterized up to -5A for high current gain hold up 

   - DC – DC Converters 

- Low profile 0.8mm high package for thin applications 

   - Charging circuits 

- RθJA efficient, 40% lower than SOT26 

- 2 

- • 6mm footprint, 50% smaller than TSOP6 and SOT26 

   - Power switches 

- **Lead-Free, RoHS Compliant (Note 1)** 

   - Motor control 

- **Halogen and Antimony Free. “Green” Device (Note 2)** • 

- Portable applications 

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• Qualified to AEC-Q101 Standards for High Reliability<br>C1 C2<br>DFN3020B-8<br>C2 C2 C1 C1<br>B1 B2<br>C2 C1<br>& &  O E1 © E2 E2 B2 E1 B1 Pin 1<br>Top View  Bottom View  NPN Transistor  PNP Transistor  Bottom View<br>Pin Out<br>Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 3) 

|**Product**|**Marking**|**Reel size (inches)**|**Tape width (mm)**|**Quantity per reel **|
|---|---|---|---|---|
|ZXTC6720MCTA|DE4|7|8|3,000|



Notes: 1. No purposefully added lead. 

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 

3. For Packaging Details, go to our website at http://www.diodes.com. 

## **Marking Information** 

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DE4 = Product type marking code<br>DE4 Top View, Dot Denotes Pin 1<br>**----- End of picture text -----**<br>


ZXTC6720MC Document number: DS31929 Rev. 3 - 2 

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**A Product Line of Diodes Incorporated** 

## **ZXTC6720MC** fp 

**Maximum Ratings** @ TA = 25°C unless otherwise specified 

**==> picture [501 x 83] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||||
|---|---|---|---|---|---|---|---|
|Parameter|Symbol|NPN|PNP|Unit|
|Collector-Base Voltage|VCBO|100|-70|
|Collector-Emitter Voltage|VCEO|80|-70|V|
|Emitter-Base Voltage|VEBO|7|-7|
|Peak Pulse Current|ICM|5|-3|
|(Notes 4 & 7)|3.5|-2.5|
|Continuous Collector Current|(Notes|5|& 7)|IC|4|-3|A|
|Base Current|IB|1|

**----- End of picture text -----**<br>


**Thermal Characteristics** @ TA = 25°C unless otherwise specified 

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||||||||
|---|---|---|---|---|---|---|
|Characteristic|Symbol|NPN|PNP|Unit|
|1.5|
|(Notes 4 & 7)|12|
|2.45|
|Power Dissipation|(Notes 5 & 7)|19.6|W|
|Linear Derating Factor|PD|1.13|mW/°C|
|(Notes 6 & 7)|
|8|
|1.7|
|(Notes 6 & 8)|13.6|
|(Notes 4 & 7)|83.3|
|(Notes 5 & 7)|51.0|
|Thermal Resistance, Junction to Ambient|(Notes|6|& 7)|RθJA|111|°C/W|
|(Notes|6|&|8)|73.5|
|Thermal Resistance, Junction to Lead|(Notes 7 & 9)|RθJL|17.1|
|Operating and Storage Temperature Range|TJ, TSTG|-55 to +150|°C|

**----- End of picture text -----**<br>


Notes: 4. For a dual device surface mounted on 28mm x 28mm (8cm[2] ) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition.  The heatsink is split in half with the exposed collector pads connected to each half. 

5. Same as note (4), except the device is measured at t <5 sec. 

6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm[2] ) FR4 PCB with high coverage of single sided 1oz copper. 

7. For a dual device with one active die. 

8. For dual device with 2 active die running at equal power. 

9. Thermal resistance from junction to solder-point (at the end of the collector lead). 

ZXTC6720MC Document number: DS31929 Rev. 3 - 2 

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**ZXTC6720MC** 

## **Thermal Characteristics** 

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**----- Start of picture text -----**<br>
10<br>PSN ONS ON HF PAAFNNONN<br>1 p= DC 7 NAN SO 1 ZINN DC ONAV<br>aaa 1s Ht _ Zt A YAN AAT SAL 1s / HS .<br>V V<br>0.1 Limited CE(SAT) 100ms 10ms 0.1 Limited CE(SAT) 100ms 10ms<br>8sqcm 2oz Cu 1ms 8sqcm 2oz Cu 1ms<br>One active die 100us One active die 100us<br>Single Pulse, T amb =25°C Single Pulse, T amb =25°C<br>0.010.1 1 Sor.PTT 10 ONTP T 100 0.010 .1 1 tH ail 10 Ce maa il 10 0<br>VCE  Collector-Emitter Voltage (V) -VCE Collector-Emitter Voltage (V)<br>NPN Safe Operating Area PNP Safe Operating Area<br>2.0<br>10sqcm 1oz Cu<br>80 8sqcm 2oz Cu<br>Two active die<br>One active die<br>STI HEHE P| til P| [i<br>1.5<br>60 EE LC Th NY 8sqcm 2oz Cu a<br>One active die<br>AIIM a A sen ol TT OX rT |<br>D=0.5<br>rmLr laa IL 1.0 = 10sqcm 1oz Cu |<br>40 SaiUUeeat eAMONI! TL PSSa aNe One active die a<br>D=0.2 Single Pulse<br>0.5<br>20 a ZA Ill PNR<br>D=0.05<br>AIM HI po<br>ee. D=0.1 Ill ~ SNS.<br>0 ee Li) 1 CA 0.0 PE<br>100µ 1m 10m 100m 1 10 100 1k 0 25 50 75 100 125 150<br>Pulse Width (s)  Temperature (°C)<br>Transient Thermal Impedance Derating Curve<br>3.5 225<br>3.0 T amb =25°C HitiT 2oz CuTwo active die meal 200 SE 1oz Cu HA Ht<br>T =150°C<br>j max 175 One active die<br>2.5 Continuous HOE LtSatTY RONPREY 1fy 1oz Cu<br>150 Two active die<br>2oz Cu<br>2.0 = One active die mann 125 ORS<br>1.5 pteen Na e ps tt 100 ONSPT re = _|<br>75<br>1.0 ee <20TTT YS 2oz Cu i<br>= 1oz Cu 50 Once active die —— sl<br>0.5 1oz Cu Two active die 2oz Cu<br>ant One active die ell i 25 Two active die am/A80 eT<br>0.0 pT Pe 7 0 0 EEa tdel<br>100m 1 10 100 0.1 1 10 100<br>Board Cu Area (sqcm) Board Cu Area (sqcm)<br>  Collector Current (A)IC   Collector Current (A)-IC<br>Thermal Resistance (°C/W)  Max Power Dissipation (W)<br> Dissipation (W)<br>D<br>P<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


## **Power Dissipation v Board Area** 

## **Thermal Resistance v Board Area** 

ZXTC6720MC Document number: DS31929 Rev. 3 - 2 

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## **ZXTC6720MC** [| 

## **Electrical Characteristics, NPN Transistor** (at TA = 25°C unless otherwise specified) 

|**Electrical Characteristics, NPN Transistor, NPN Transistor NPN Transistor** (at TA = 25°C unless otherwise specified)A = 25°C unless otherwise specified)= 25°C unless otherwise specified)|**Electrical Characteristics, NPN Transistor, NPN Transistor NPN Transistor** (at TA = 25°C unless otherwise specified)A = 25°C unless otherwise specified)= 25°C unless otherwise specified)|**Electrical Characteristics, NPN Transistor, NPN Transistor NPN Transistor** (at TA = 25°C unless otherwise specified)A = 25°C unless otherwise specified)= 25°C unless otherwise specified)|**Electrical Characteristics, NPN Transistor, NPN Transistor NPN Transistor** (at TA = 25°C unless otherwise specified)A = 25°C unless otherwise specified)= 25°C unless otherwise specified)|**Electrical Characteristics, NPN Transistor, NPN Transistor NPN Transistor** (at TA = 25°C unless otherwise specified)A = 25°C unless otherwise specified)= 25°C unless otherwise specified)|**Electrical Characteristics, NPN Transistor, NPN Transistor NPN Transistor** (at TA = 25°C unless otherwise specified)A = 25°C unless otherwise specified)= 25°C unless otherwise specified)|**Electrical Characteristics, NPN Transistor, NPN Transistor NPN Transistor** (at TA = 25°C unless otherwise specified)A = 25°C unless otherwise specified)= 25°C unless otherwise specified)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|Collector-Base Breakdown Voltage|BVCBO|100|180|-|V|IC= 100µA|
|Collector-Emitter Breakdown Voltage(Note 10)|BVCEO|80|110|-|V|IC= 10mA|
|Emitter-Base Breakdown Voltage|BVEBO|7|8.2|-|V|IE= 100µA|
|Collector Cutoff Current|ICBO|-|-|100|nA|VCB= 80V|
|Emitter Cutoff Current|IEBO|-|-|100|nA|VEB= 6V|
|Collector Emitter Cutoff Current|ICES|-|-|100|nA|VCE= 65V|
|Static Forward Current Transfer Ratio<br>(Note 10)|hFE|200<br>300<br>110<br>60<br>20<br>-|450<br>450<br>170<br>90<br>30<br>10|-<br>900<br>-<br>-<br>-<br>-|-|IC= 10mA, VCE= 2V<br>IC= 200mA, VCE= 2V<br>IC= 1A, VCE= 2V<br>IC= 1.5A, VCE= 2V<br>IC= 3A, VCE= 2V<br>IC= 5A,VCE = 2V|
|Collector-Emitter Saturation Voltage<br>(Note 10)<br>~~|~~|VCE(sat)<br>~~|~~|-<br>-<br>-<br>-<br>-<br>~~|~~|15<br>45<br>145<br>160<br>240<br>~~|~~|20<br>60<br>185<br>200<br>340<br>~~|~~|mV<br>~~|~~|IC= 0.1A, IB= 10mA<br>IC= 0.5A, IB= 50mA<br>IC= 1A, IB= 20mA<br>IC= 1.5A, IB= 50mA<br>IC= 3.5A,IB = 300mA<br>~~|~~|
|Base-Emitter Turn-On Voltage(Note 10)<br>~~|~~|VBE(on)<br>~~|~~|-<br>~~|~~|0.96<br>~~|~~|1.05<br>~~|~~|V<br>~~|~~|IC= 3.5A,VCE = 2V<br>~~|~~|
|Base-Emitter Saturation Voltage(Note 10)<br>~~SE~~|VBE(sat)<br>~~SE~~|-<br>~~SE~~|1.09<br>~~SE~~|1.175<br>~~SE~~|V<br>~~SE~~|IC= 3.5A,IB = 300mA<br>~~SE~~|
|Output Capacitance<br>~~SE~~|Cobo<br>~~SE~~|-<br>~~SE~~|11.5<br>~~SE~~|18<br>~~SE~~|pF<br>~~SE~~|VCB= 10V. f = 1MHz<br>~~SE~~|
|Transition Frequency<br>~~SE~~|fT<br>~~SE~~|100<br>~~SE~~|160<br>~~SE~~|-<br>~~SE~~|MHz<br>~~SE~~|VCE= 10V, IC= 50mA,<br>f = 100MHz<br>~~SE~~|
|Turn-on Time<br>~~ro~~|ton<br>~~ro~~|-<br>~~ro~~|86<br>~~ro~~|-<br>~~ro~~|ns<br>~~ro~~|VCC= 10V, IC= 1A<br>IB1= IB2= 25mA<br>~~ro~~|
|Turn-off Time<br>~~ro~~|toff<br>~~ro~~|-<br>~~ro~~|1128<br>~~ro~~|-<br>~~ro~~|ns<br>~~ro~~||



ZXTC6720MC Document number: DS31929 Rev. 3 - 2 

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**ZXTC6720MC** 

## **NPN - Typical Electrical Characteristics** 

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**----- Start of picture text -----**<br>
0.25<br>-—+ 4+ Ft<br>Tamb=25°C I C /I B =50<br>100m |TiinaAWparalii 0.20 THITt<br>TTNT a IC/IB I =20 C/IB=10 0.150.10 25°C 100 ° C YY<br>10m SSO<br>SS SSS SSS IC/IB=50 Rete OAS -55°C<br>SSS<br>EHPBRHE IC/IB=100 tr SB 0.05 |eea AZerAlll<br>1m EL TTAIIT | ok)TT ahTUne 0.00 PSSSCTTM PTETTTLUM |<br>1m 10m 100m 1 10 1m 10m 100m 1<br>IC   Collector Current (A) IC   Collector Current (A)<br>V  v I V  v I<br>CE(SAT) C CE(SAT) C<br>1.4 630<br>VCE=2V 1.0 I C /I B =50<br>1.2 aeEC 100°C Nt| 540 agIMTTTT 1<br>1.0 PCN 450 as<br>0.8 eT 25°C ETT 360 0.8 aHi -55°C aeecea<br>aAET I tATTL |||<br>0.6 0CrNT 270 0.6 YY]ar 25°C SoeCeTT<br>0.4 ST -55°C SN OCTTTI 180 = 1 la<br>lll rr aie 100°C THAN | qT<br>0.2 90 0.4<br>0.0 BelPCT Etiieatiie,TSSHITTIN TTTCee TTT 0 peatPLL IINE aeLL AIII EEUIIATTTT FYTTT<br>1m 10m 100m 1 10 1m 10m 100m 1<br>IC   Collector Current (A) IC   Collector Current (A)<br>h  v I V  v I<br>FE C BE(SAT) C<br>1.0 V CE =2V<br>ROA<br>e/a<br>0.8<br>Ee<br>TE -55°C AAI<br>0.6 |<br>mai ecm i Tf<br>25°C<br>TT<br>0.4 100°C<br>tn HT Pte<br>memilll HI ETM<br>0.2 PT TTAIT TEIN TET EV<br>1m 10m 100m 1 10<br>IC   Collector Current (A)<br>V  v I<br>BE(ON) C<br>  (V)   (V)<br>CE(SAT) CE(SAT)<br>V V<br>)<br>FE<br>  (V)<br>BE(SAT)<br>V<br>Normalised Gain<br> Typical Gain (h<br> (V)<br>BE(ON)<br>V<br>**----- End of picture text -----**<br>


ZXTC6720MC Document number: DS31929 Rev. 3 - 2 

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## **ZXTC6720MC** [| 

**PNP - Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**PNP - Electrical Characteristics**|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|Collector-Base Breakdown Voltage|V(BR)CBO|-70|-150|-|V|IC= -100µA|
|Collector-Emitter Breakdown Voltage(Note 11)|V(BR)CEO|-70|-125|-|V|IC= -10mA|
|Emitter-Base Breakdown Voltage|V(BR)EBO|-7|-8.5|-|V|IE= -100µA|
|Collector Cutoff Current|ICBO|-|-|-100|nA|VCB= -55V|
|Emitter Cutoff Current|IEBO|-|-|-100|nA|VEB= -6V|
|Collector Emitter Cutoff Current<br>~~ee eee~~|ICES<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~|-100<br>~~eee~~|nA<br>~~eee~~|VCE= -55V<br>~~eee~~|
|Static Forward Current Transfer Ratio<br>(Note 11)<br>~~ee eee~~<br>~~re~~|hFE<br>~~eee~~<br>~~ee~~|200<br>300<br>175<br>40<br>-<br>~~eee~~<br>~~ee~~|470<br>450<br>275<br>60<br>10<br>~~eee~~<br>~~ee~~|-<br>-<br>-<br>-<br>-<br>~~eee~~<br>~~ee~~|-<br>~~eee~~<br>~~ee~~|IC= -10mA, VCE= -5V<br>IC= -100mA, VCE= -5V<br>IC= -1A, VCE= -5V<br>IC= -1.5A, VCE= -5V<br>IC= -3A,VCE = -5V<br>~~eee~~<br>~~ee~~|
|Collector-Emitter Saturation Voltage<br>(Note 11)<br>~~ee eee~~<br>~~re~~|VCE(sat)<br>~~eee~~<br>~~ee~~|-<br>-<br>-<br>-<br>~~eee~~<br>~~ee~~|-35<br>-135<br>-140<br>-175<br>~~eee~~<br>~~ee~~|-50<br>-200<br>-220<br>-270<br>~~eee~~<br>~~ee~~|mV<br>~~eee~~<br>~~ee~~|IC= -0.1A, IB= -10mA<br>IC= -0.5A, IB= -20mA<br>IC= -1.0A, IB= -100mA<br>IC= -1.5A,IB = -200mA<br>~~eee~~<br>~~ee~~|
|Base-Emitter Turn-On Voltage(Note 11)<br>~~re~~|VBE(on)<br>~~ee~~|-<br>~~ee~~|0.78<br>~~ee~~|1.00<br>~~ee~~|V<br>~~ee~~|IC= -1.5A,VCE = -5V<br>~~ee~~|
|Base-Emitter Saturation Voltage(Note 11)<br>~~re ~~<br>~~SE~~|VBE(sat)<br> ~~ee~~<br>~~SE~~|-<br>~~ee~~<br>~~SE~~|0.94<br>~~ee~~<br>~~SE~~|1.05<br>~~ee~~<br>~~SE~~|V<br>~~ee~~<br>~~SE~~|IC= -1.5A,IB = -200mA<br>~~ee~~<br>~~SE~~|
|Output Capacitance<br>~~SE~~|Cobo<br>~~SE~~|-<br>~~SE~~|14<br>~~SE~~|20<br>~~SE~~|pF<br>~~SE~~|VCB= -10V. f = 1MHz<br>~~SE~~|
|Transition Frequency<br>~~SE~~|fT<br>~~SE~~<br>~~oo~~|150<br>~~SE~~<br>~~oo~~|180<br>~~SE~~<br>~~oo~~|-<br>~~SE~~<br>~~oo~~|MHz<br>~~SE~~|VCE= -10V, IC= -50mA,<br>f = 100MHz<br>~~SE~~|
|Turn-on Time<br>~~ee~~|ton<br>~~ee~~<br>~~oo~~|-<br>~~ee~~<br>~~oo~~|40<br>~~ee~~<br>~~oo~~|-<br>~~ee~~<br>~~oo~~|ns<br>~~ee~~|VCC = -50V, IC= -1A<br>IB1= IB2= -50mA<br>~~ee~~|
|Turn-off Time<br>~~ee~~|toff<br>~~ee~~<br>~~oo~~|-<br>~~ee~~<br>~~oo~~|700<br>~~ee~~<br>~~oo~~|-<br>~~ee~~<br>~~oo~~|ns<br>~~ee~~||



Notes: 11. Measured under pulsed conditions.  Pulse width ≤ 300µs. Duty cycle ≤  2%. 

ZXTC6720MC Document number: DS31929 Rev. 3 - 2 

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**ZXTC6720MC** 

## **PNP - Typical Electrical Characteristics** 

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**----- Start of picture text -----**<br>
1 0.4<br>A Tamb=25°C TTT TTTTTA 0.3 I C /I B =10 TT<br>THM I /I =50 A<br>C B<br>100m IM pm i<br>up A 0.2 rr Aa<br>I /I =20 150°C<br>C B<br>I C /I B =10 0.1 100°C<br>Cem<br>25°C<br>10m ee I /I =5 pn yf<br>IN C B |eee<br>-55°C<br>SS ast eee 0.0 ——Se<br>1m 10m 100m 1 10 10m 100m 1<br>- IC   Collector Current (A) - IC   Collector Current (A)<br>V  v I V  v I<br>CE(SAT) C CE(SAT) C<br>800 PS 150°C He V CE =5V 1.0 IC/IB=10 He 25°C FTI<br>700 ee, a | -55°C | ee)<br>SSE eG<br>600 100°C 0.8<br>RR LE<br>500<br>400 25°C 0.6 150°C<br>300 PTSeer eemetntieen, Cee eeLeeen|ee<br>200 -55°C 0.4 100°C<br>100 ES beet<br>0 EE HE HH 0.2 PT TINE TMEITEH<br>1m 10m 100m 1 1m 10m 100m 1<br>- IC   Collector Current (A) - IC   Collector Current (A)<br>h  v I V  v I<br>FE C BE(SAT) C<br>1.0 V CE =5V<br>25°C<br>TA -55°C<br>0.8 Tt) CHUL<br>ONS|<br>TT<br>0.6<br>I<br>erm| eer TH<br>0.4<br>150°C<br>Cert<br>Ts ttt<br>100°C<br>0.2 eTSiTT. |<br>Cn nn<br>1m 10m 100m 1<br>- IC   Collector Current (A)<br>V  v I<br>BE(ON) C<br>  (V)   (V)<br>CE(SAT) CE(SAT)<br>- V - V<br>)<br>FE<br>  (V)<br>BE(SAT)<br>- V<br> Typical Gain (h<br> (V)<br>BE(ON)<br>- V<br>**----- End of picture text -----**<br>


ZXTC6720MC Document number: DS31929 Rev. 3 - 2 

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**A Product Line of Diodes Incorporated** | **ZXTC6720MC** | 

## **Package Outline Dimensions** 

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**----- Start of picture text -----**<br>
DFN3020B-8<br>A A3<br>Dim Min  Max  Typ<br>A  0.77 0.83 0.80<br>A1<br>eco fee A1  0 0.05 0.02<br>A3 -  -  0.15<br>D<br>b 0.25 0.35 0.30<br>D  2.95 3.075 3.00<br>D2  0.82 1.02  0.92<br>D4  1.01 1.21  1.11<br>D4 D4 e -  -  0.65<br>oom, D2 |  EEE E  1.95 2.075 2.00<br>E E2 E2  0.43 0.63 0.53<br>L  0.25 0.35 0.30<br>Z b e Z  -  -  0.375<br>L AP L O —— All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

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**----- Start of picture text -----**<br>
C X<br>Y1<br>G1<br>G<br>Y2<br>Y<br>TEI<br>X1<br>NOUOUU<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|0.650|
|**G**|0.285|
|**G1 **|0.090|
|**X**|0.400|
|**X1**|1.120|
|**Y**|0.730|
|**Y1**|0.500|
|**Y2**|0.365|



ZXTC6720MC Document number: DS31929 Rev. 3 - 2 

8 of 9 **www.diodes.com** 

January 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** | **ZXTC6720MC** fp 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2011, Diodes Incorporated 

**www.diodes.com** 

ZXTC6720MC Document number: DS31929 Rev. 3 - 2 

9 of 9 **www.diodes.com** 

January 2011 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/ZXTC6720MCTA/bipolar-transistor-array-npn-pnp-80-v-4-a-17-w)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/zxtc6720mcta/bipolar-array-npn-pnp-80v-4a/dp/3944373RL)
---

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