# Bipolar Transistor Array, Complementary NPN and PNP, 20 V, 20 V, 4.5 A, 4.5 A, 1.7 W ![Product image](https://novapart.co/image/farnell:3944370RL/) **URL**: https://novapart.co/products/ZXTC6718MCTA/bipolar-transistor-array-complementary-npn-and-pnp **SKU**: ZXTC6718MCTA **Manufacturer**: DIODES INC. **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT **Price**: €0.2540 **Stock**: 10+ **Lead Time**: 126 days (indicative) ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 8Pins | | Product Range | - | | Qualification | AEC-Q101 | | Transistor Mounting | Surface Mount | | Transistor Polarity | Complementary NPN and PNP | | Power Dissipation Npn | 1.7W | | Power Dissipation Pnp | 1.7W | | Transistor Case Style | W-DFN3020 | | Transition Frequency Npn | 140MHz | | Transition Frequency Pnp | 180MHz | | Operating Temperature Max | 150Β°C | | Dc Current Gain Hfe Min Npn | 100hFE | | Dc Current Gain Hfe Min Pnp | 100hFE | | Continuous Collector Current Npn | 4.5A | | Continuous Collector Current Pnp | 4.5A | | Collector Emitter Voltage Max Npn | 20V | | Collector Emitter Voltage Max Pnp | 20V | ## Datasheet πŸ“„ [Download PDF](https://novapart.co/datasheet/farnell:3944370RL/) **A Product Line of Diodes Incorporated** ' N c o Rr P o Rr art **ZXTC6718MC** ## **COMPLEMENTARY 20V LOW SATURATION TRANSISTORS** ## **Features** NPN Transistor - BVCEO > 20V - IC = 4.5A Continuous Collector Current - Low Saturation Voltage (150mV max @ 1A) - RSAT = 47mΩ for a low equivalent On-Resistance - PNP Transistor - BVCEO > -20V - IC = -3.5A Continuous Collector Current - Low Saturation Voltage (-220mV max @ -1A) ## **Mechanical Data** - Case: W-DFN3020-8 Type B - Nominal package height: 0.8mm - Case material: molded plastic. β€œGreen” molding compound. - β€’ UL Flammability Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals: Finish - NiPdAu, Solderable per MIL-STD-202, Method 208 Β© **e4** - β€’ Weight: 0.013 grams (approximate) - RSAT = 64mΩ for a low equivalent On-Resistance - hFE characterized up to 6A for high current gain hold up - Low profile 0.8mm high package for thin applications - RΞΈJA efficient, 40% lower than SOT26 - 2 - β€’ 6mm footprint, 50% smaller than TSOP6 and SOT26 β€’ **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. β€œGreen” Device (Note 3)** - **Qualified to AEC-Q101 Standards for High Reliability** - **PPAP capable (Note 4)** ## **Applications** - DC – DC Converters - Charging circuits - Power switches - Motor control - LED Backlighting circuits - Portable applications **==> picture [493 x 141] intentionally omitted <==** **----- Start of picture text -----**
C1 C2
W-DFN3020-8
Type B C2 C2 C1 C1
B1 B2 C2 C1
P11 E2 B2 1 E1 Ch B1
E1 E2 Pin 1
Top View Bottom View NPN Transistor PNP Transistor Bottom View
Pin-Out
Equivalent Circuit
**----- End of picture text -----**
## **Ordering Information** (Note 4 & 5) |**Product**|**Compliance**|**Marking**|**Reel size (inches)**|**Tape width (mm)**|**Quantity per reel **| |---|---|---|---|---|---| |ZXTC6718MCTA|AEC-Q101|DB2|7|8|3,000| |ZXTC6718MCQTA|Automotive|DB2|7|8|3,000| - Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. 5. For packaging details, go to our website at http://www.diodes.com ## **Marking Information** **==> picture [21 x 9] intentionally omitted <==** **----- Start of picture text -----**
DB2
**----- End of picture text -----**
DB2 = Product type marking code Top view, dot denotes pin 1 ZXTC6718MC Document number: DS31927 Rev. 4 - 2 1 of 9 **www.diodes.com** October 2012 Β© Diodes Incorporated **A Product Line of Diodes Incorporated ZXTC6718MC** ~~[~~ ## **Maximum Ratings** (@TA = +25Β°C, unless otherwise specified.) |**Maximum Ratingsgss **(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|||| |---|---|---|---|---|---| |**Characteristic**||**Symbol**|**NPN**|**PNP**|**Unit**| |Collector-Base Voltage||VCBO|40|-25|V| |Collector-Emitter Voltage||VCEO|20|-20|V| |Emitter-Base Voltage||VEBO|7|-7|V| |Peak Pulse Current||ICM|12|-6|A| |Continuous CollectorCurrent|(Notes 6 & 9)|IC|4.5|-3.5|A| |Continuous CollectorCurrent|(Notes7& 9)||5|-3.8|| |Base Current||IB|1||A| ## **Thermal Characteristics** (@TA = +25Β°C, unless otherwise specified.) |**Thermal Characteristics **(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|||| |---|---|---|---|---|---| |**Characteristic**||**Symbol**|**NPN**|**PNP**|**Unit**| |Power Dissipation
Linear Derating Factor|(Notes 6 & 9)|PD|1.5
12||W
mW/Β°C| ||(Notes 7 & 9)||2.45
19.6||| ||(Notes 8 & 9)||1.13
8||| ||(Notes 8 & 10)||1.7
13.6||| |Thermal Resistance, Junction to Ambient|(Notes 6 & 9)|RΞΈJA|83.3||Β°C/W| ||(Notes 7 & 9)||51.0||| ||(Notes 8 & 9)||111||| ||(Notes 8 &10)||73.5||| |Thermal Resistance,Junction to Lead|(Notes 9 & 11)|RΞΈJL|17.1||| |Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150||Β°C| Notes: 6. For a dual device surface mounted on 28mm x 28mm (8cm[2] ) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half. 7. Same as note (6), except the device is measured at t <5 sec. 8. Same as note (6), except the device is surface mounted on 31mm x 31mm (10cm[2] ) FR4 PCB with high coverage of single sided 1oz copper. 9. For a dual device with one active die. 10. For dual device with 2 active die running at equal power. 11. Thermal resistance from junction to solder-point (on the exposed collector pads). ZXTC6718MC Document number: DS31927 Rev. 4 - 2 2 of 9 **www.diodes.com** October 2012 Β© Diodes Incorporated **A Product Line of Diodes Incorporated** **ZXTC6718MC** ## **Thermal Characteristics and Derating Information** **==> picture [455 x 542] intentionally omitted <==** **----- Start of picture text -----**
10
10 V CE(SAT) | Jo ee VCE(SAT)
Limited Limited
|} NNO SSR AO I PNITNON PNA
PZ DC | 7 ALINTY SEN ZV 1 DC PT NOSSO DAY
1
1s
1s
100ms 100ms
10ms
10ms
0.1 1ms 0.1 1ms
Pt TT" TPS LAIN
8sqcm 2oz Cu 100us 8sqcm 2oz Cu 100us
One active dieSingle Pulse, T amb a =25Β°C One active dieSingle Pulse, T amb =25Β°C ee
0.01 ee 0.01 ee
0.1 1 10 0.1 1 10
VCE Collector-Emitter Voltage (V) -VCE Collector-Emitter Voltage (V)
NPN Safe Operating Area PNP Safe Operating Area
2.0
10sqcm 1oz Cu
80 8sqcm 2oz Cu
Two active die
One active die
MRT BE ati P| | Tt Pf ff
HN as 1.5 SO a
8sqcm 2oz Cu
60
TTT ee a Con One active die Zs
D=0.5
ON oat ee A 1.0 == eG 10sqcm 1oz Cu ry
40 ee ma WYZ >< >.< One active die
emma a Se DeaNe Fy
Zak D=0.2 Single Pulse Hl ~ NN
0.5
20
owENYr D=0.1D=0.05 ill See NNGSEe
0 erin Ll | TM ygHTL LI 0.0 pSeee
100Β΅ 1m 10m 100m 1 10 100 1k 0 25 50 75 100 125 150
Pulse Width (s) Temperature (Β°C)
Transient Thermal Impedance Derating Curve
3.5 225
3.0 T amb =25Β°C TM 2oz CuTwo active die LI 200 o_o 1oz Cu
T =150Β°C
j max H tet SCE 175 RST One active die IE E oonETE
2.5 Continuous a ee \ AT PONTNew Saal aTn 1oz Cu cr
150 Two active die
2oz Cu
2.0 = One active die SePTT ee 125 APOE NSSISSEETOHE
1.5 eton eerie 10075 REPY= coo
1.0 | | | ee ee 2oz Cu tl
fe 1oz Cu || 50 Once active die PT TT
0.5 1oz Cu Two active die 2oz Cu
25
One active die Two active die
0.0 acron aeFeo| 0 -}β€”tse+ EH Ettemi
100m 1 10 100 0.1 1 10 100
Board Cu Area (sqcm) Board Cu Area (sqcm)
Collector Current (A)IC Collector Current (A)-IC
Thermal Resistance (Β°C/W) Max Power Dissipation (W)
Dissipation (W)
D
P
Thermal Resistance (Β°C/W)
**----- End of picture text -----**
## **Power Dissipation v Board Area** ## **Thermal Resistance v Board Area** ZXTC6718MC Document number: DS31927 Rev. 4 - 2 3 of 9 **www.diodes.com** October 2012 Β© Diodes Incorporated **A Product Line of Diodes Incorporated ZXTC6718MC** | **NPN - Electrical Characteristics** (@TA = +25Β°C, unless otherwise specified.) |**NPN - Electrical Characteristics**(@TA = +25Β°C, unless otherwise specified.)|(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)||| |---|---|---|---|---|---|---| |**Characteristic**
~~β€”β€”β€”~~|**Symbol **
~~β€”β€”β€”~~|**Min**
~~β€”β€”β€”~~|**Typ**
~~β€”β€”β€”~~|**Max **
~~β€”β€”β€”~~|**Unit**
~~β€”β€”β€”~~|**Test Condition **
~~β€”β€”β€”~~| |Collector-Base Breakdown Voltage
~~β€”β€”β€”~~|BVCBO
~~β€”β€”β€”~~|40
~~β€”β€”β€”~~|100
~~β€”β€”β€”~~|-
~~β€”β€”β€”~~|V
~~β€”β€”β€”~~|IC= 100Β΅A
~~β€”β€”β€”~~| |Collector-Emitter Breakdown Voltage(Note 12)
~~β€”β€”β€”~~|BVCEO
~~β€”β€”β€”~~|20
~~β€”β€”β€”~~|27
~~β€”β€”β€”~~|-
~~β€”β€”β€”~~|V
~~β€”β€”β€”~~|IC= 10mA
~~β€”β€”β€”~~| |Emitter-Base Breakdown Voltage
~~β€”β€”β€”~~|BVEBO
~~β€”β€”β€”~~|7
~~β€”β€”β€”~~|8.2
~~β€”β€”β€”~~|-
~~β€”β€”β€”~~|V
~~β€”β€”β€”~~|IE= 100Β΅A
~~β€”β€”β€”~~| |Collector Cutoff Current
~~β€”β€”β€”~~
~~a~~|ICBO
~~β€”β€”β€”~~
~~ee~~|-
~~β€”β€”β€”~~
~~ee~~|-
~~β€”β€”β€”~~
~~ee~~|100
~~β€”β€”β€”~~
~~ee~~|nA
~~β€”β€”β€”~~
~~ee~~|VCB= 30V
~~β€”β€”β€”~~| |Emitter Cutoff Current
~~a~~|IEBO
~~ee~~|-
~~ee~~|-
~~ee~~|100
~~ee~~|ο€ nA
~~ee~~|VEB= 6V| |Collector Emitter Cutoff Current
~~a~~
~~ee~~|ICES
~~ee~~
~~ee~~|-
~~ee~~
~~ee~~|-
~~ee~~
~~ee~~|100
~~ee~~
~~ee~~|nA
~~ee~~
~~ee~~|VCE= 16V
~~ee~~| |Static Forward Current Transfer Ratio (Note 12)
~~a~~
~~ee~~|hFE
~~ee~~
~~ee~~|200
300
200
100
~~ee ~~
~~ee~~|400
450
360
180
~~ee ~~
~~ee~~|-
-
-
-
~~ee~~
~~ee~~
~~ff~~|-
-
-
-
~~ee~~
~~ee~~
~~ff~~|IC= 10mA, VCE= 2V
IC= 200mA, VCE= 2V
IC= 2A, VCE= 2V
IC= 6A,VCE = 2V
~~ee~~
~~ff~~| |Collector-Emitter Saturation Voltage (Note 12)
~~ee ~~
~~ft~~|VCE(sat)
~~ee~~
~~ft~~|-
~~ee~~
~~ft~~|8
90
115
190
210
~~ee~~
~~ft~~|15
150
135
250
300
~~ee~~
~~ft~~
~~ff~~|mV
~~ee~~
~~ft~~
~~ff~~|IC= 0.1A, IB= 10mA
IC= 1A, IB= 10mA
IC= 2A, IB= 50mA
IC= 3A, IB= 100mA
IC= 4.5A,IB = 125mA
~~ee~~
~~ft~~
~~ff~~| |Base-Emitter Turn-On Voltage(Note 12)
~~ft~~|VBE(on)
~~ft~~|-
~~ft~~|0.88
~~ft~~|0.97
~~ft~~
~~ff~~|V
~~ft~~
~~ff~~|IC= 4.5A,VCE = 2V
~~ft~~
~~ff~~| |Base-Emitter Saturation Voltage(Note 12)
~~ft~~|VBE(sat)
~~ft~~|-
~~ft~~|0.98
~~ft~~|1.07
~~ft~~
~~ff~~|V
~~ft~~
~~ff~~|IC= 4.5A,IB= 125mA
~~ft~~
~~ff~~| |Output Capacitance
~~SS~~|Cobo
~~SS~~|-
~~SS~~|23
~~SS~~|30
~~ff~~
~~SS~~|pF
~~ff~~
~~SS~~|VCB= 10V,f = 1MHz
~~ff~~
~~SS~~| |Transition Frequency
~~SS~~|fT
~~SS~~|100
~~SS~~|140
~~SS~~|-
~~ff~~
~~SS~~
~~ee~~|MHz
~~ff~~
~~SS~~
~~aoe~~|VCE= 10V, IC= 50mA,
f = 100MHz
~~ff~~
~~SS~~
~~ae~~| |Turn-on Time
~~Se~~|ton
~~Se~~|-
~~Se~~|170
~~Se~~|-
~~Se~~
~~ee~~|ns
~~Se~~
~~aoe~~|VCC= 10V, IC= 3A
IB1= IB2= 10mA
~~Se~~
~~ae~~| |Turn-off Time
~~Se~~|toff
~~Se~~|-
~~Se~~|400
~~Se~~|-
~~Se~~
~~ee~~|ns
~~Se~~
~~aoe~~|| ZXTC6718MC Document number: DS31927 Rev. 4 - 2 4 of 9 **www.diodes.com** October 2012 Β© Diodes Incorporated **A Product Line of Diodes Incorporated** **ZXTC6718MC** ## Lr ## **NPN - Typical Electrical Characteristics** (@TA = +25Β°C, unless otherwise specified.) **==> picture [439 x 539] intentionally omitted <==** **----- Start of picture text -----**
0.25
Tamb=25Β°C I C /I B =50
ee aa 0.20 a eae
100m eT mH Za | [ET
100Β°C
I C /I B =100 0.15
Poorer eA 25Β°C Ly)
ee CO 0.10 | Il NVA
10m === IC/IB=50 SSS eesti M -55Β°C
IC/IB=10 0.05
Sa te Na
eee 11 PL UTTIIE | eer | LTT
1m PLEIN [EV] CET TT 0.00 PTPC TT
1m 10m 100m 1 10 1m 10m 100m 1 10
IC Collector Current (A) IC Collector Current (A)
V v I V v I
CE(SAT) C CE(SAT) C
630
1.2 On ooo V CE =2V 540 1.0 I C /I B =50 TTL
Sansa 100Β°C Sit eae
1.0 Bay HtET 450 CLMae
0.8
0.8 Sea 25Β°C 360 -55Β°C esa PO
at At CCCer Ay
0.6 ec 270 TT
0.6 25Β°C
0.4 EEE -55Β°C 180 Cee een Cl
ntti CE ASN Bh as 100Β°C
0.2 eerie TS AE 90 0.4 a8 ag
SHH are
0.0 oni on orn 0 PL TUT ETT ae EL {HAE ET
1m 10m 100m 1 10 1m 10m 100m 1 10
IC Collector Current (A) IC Collector Current (A)
h v I V v I
FE C BE(SAT) C
1.0 V CE =2V
CAR TIE A
0.8
BN Neel
a -55Β°C esc
0.6 Aea
err 25Β°C TA
Te
0.4 100 Β° C
SEE mnie aAAI MARI ETH
1m 10m 100m 1 10
IC Collector Current (A)
V v I
BE(ON) C
(V) (V)
CE(SAT) CE(SAT)
V V
)
FE
(V)
BE(SAT)
V
Normalised Gain
Typical Gain (h
(V)
BE(ON)
V
**----- End of picture text -----**
ZXTC6718MC Document number: DS31927 Rev. 4 - 2 5 of 9 **www.diodes.com** October 2012 Β© Diodes Incorporated **A Product Line of Diodes Incorporated ZXTC6718MC** | **PNP - Electrical Characteristics** (@TA = +25Β°C, unless otherwise specified.) |**PNP - Electrical Characteristics**(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)
~~SSS~~
~~5555S>~~|**PNP - Electrical Characteristics**(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)
~~SSS~~
~~5555S>~~|**PNP - Electrical Characteristics**(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)
~~SSS~~
~~5555S>~~|**PNP - Electrical Characteristics**(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)
~~SSS~~
~~5555S>~~|**PNP - Electrical Characteristics**(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)
~~SSS~~
~~5555S>~~|**PNP - Electrical Characteristics**(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)
~~SSS~~
~~5555S>~~|**PNP - Electrical Characteristics**(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)
~~SSS~~
~~5555S>~~| |---|---|---|---|---|---|---| |~~SSS~~
~~5555S>~~||||||| |**Characteristic**
~~SSS~~|**Symbol **
~~SSS~~|**Min**
~~5555S>~~|**Typ**
~~5555S>~~|**Max **
~~5555S>~~|**Unit**
~~5555S>~~|**Test Condition **
~~5555S>~~| |Collector-Base Breakdown Voltage
~~SSS~~|BVCBO
~~SSS~~|-25
~~5555S>~~|-35
~~5555S>~~|-
~~5555S>~~|V
~~5555S>~~|IC= -100Β΅A
~~5555S>~~| |Collector-Emitter Breakdown Voltage(Note 12)
~~SSS~~|BVCEO
~~SSS~~|-20
~~5555S>~~|-25
~~5555S>~~|-
~~5555S>~~|V
~~5555S>~~|IC= -10mA
~~5555S>~~| |Emitter-Base Breakdown Voltage
~~SSS~~|BVEBO
~~SSS~~|-7
~~5555S>~~|-8.5
~~5555S>~~|-
~~5555S>~~|V
~~5555S>~~|IE= -100Β΅A
~~5555S>~~| |Collector Cutoff Current
~~SSS~~
~~β€”β€”β€”β€”β€”β€”β€”β€”β€”β€”~~|ICBO
~~SSS~~
~~β€”β€”β€”β€”β€”β€”β€”β€”β€”β€”~~|-
~~5555S>~~
~~β€”β€”β€”β€”β€”β€”β€”β€”β€”β€”~~|-
~~5555S>~~
~~β€”β€”β€”β€”β€”β€”β€”β€”β€”β€”~~|-100
~~5555S>~~
~~β€”β€”β€”β€”β€”β€”β€”β€”β€”β€”~~|nA
~~5555S>~~
~~β€”β€”β€”β€”β€”β€”β€”β€”β€”β€”~~|VCB= -20V
~~5555S>~~
~~β€”β€”β€”β€”β€”β€”β€”β€”β€”β€”~~| |Emitter Cutoff Current
~~SSS~~
~~β€”β€”β€”β€”β€”β€”β€”β€”β€”β€”~~|IEBO
~~SSS~~
~~β€”β€”β€”β€”β€”β€”β€”β€”β€”β€”~~|-
~~5555S>~~
~~β€”β€”β€”β€”β€”β€”β€”β€”β€”β€”~~|-
~~5555S>~~
~~β€”β€”β€”β€”β€”β€”β€”β€”β€”β€”~~|-100
~~5555S>~~
~~β€”β€”β€”β€”β€”β€”β€”β€”β€”β€”~~|ο€ nA
~~5555S>~~
~~β€”β€”β€”β€”β€”β€”β€”β€”β€”β€”~~|VEB= -6V
~~5555S>~~
~~β€”β€”β€”β€”β€”β€”β€”β€”β€”β€”~~| |Collector Emitter Cutoff Current
~~β€”β€”β€”β€”β€”β€”β€”β€”β€”β€”~~|ICES
~~β€”β€”β€”β€”β€”β€”β€”β€”β€”β€”~~
~~ee~~|-
~~β€”β€”β€”β€”β€”β€”β€”β€”β€”β€”~~|-
~~β€”β€”β€”β€”β€”β€”β€”β€”β€”β€”~~|-100
~~β€”β€”β€”β€”β€”β€”β€”β€”β€”β€”~~
~~eee~~|nA
~~β€”β€”β€”β€”β€”β€”β€”β€”β€”β€”~~
~~eee~~|VCES= -16V
~~β€”β€”β€”β€”β€”β€”β€”β€”β€”β€”~~
~~eee~~| |Static Forward Current Transfer Ratio (Note 12)
~~ee~~|hFE
~~ee~~
~~ee~~|300
300
150
15
~~ee~~|475
450
230
30
~~ee~~|-
-
-
-
~~ee~~
~~eee~~|-
~~ee~~
~~eee~~|IC= -10mA, VCE= -2V
IC= -100mA, VCE= -2V
IC= -2A, VCE= -2V
IC= -6A,VCE= -2V
~~ee~~
~~eee~~| |Collector-Emitter Saturation Voltage (Note 12)|VCE(sat)
~~ee~~|-
-
-
-
-|-19
-170
-190
-240
-225|-30
-220
-250
-350
-300
~~eee~~|mV
~~eee~~|IC= -0.1A, IB= -10mA
IC= -1A, IB= -20mA
IC= -1.5A, IB= -50mA
IC= -2.5A, IB= -150mA
IC= -3.5A,IB= -350mA
~~eee~~| |Base-Emitter Turn-On Voltage(Note 12)|VBE(on)|-|-0.87|-0.95|V|IC= -3.5A,VCE= -2V| |Base-Emitter Saturation Voltage(Note 12)|VBE(sat)|-|-1.01|-1.12|V|IC= -3.5A,IB= -350mA| |Output Capacitance
~~OO~~|Cobo
~~OO~~|-
~~OO~~|21
~~OO~~|30
~~OO~~|pF
~~OO~~|VCB= -10V. f = 1MHz
~~OO~~| |Transition Frequency
~~OO~~|fT
~~OO~~|150
~~OO~~|180
~~OO~~|-
~~OO~~|MHz
~~OO~~|VCE= -10V, IC= -50mA,
f = 100MHz
~~OO~~| |Turn-on Time
~~ee~~|ton
~~ee~~|-
~~ee~~|40
~~ee~~|-
~~ee~~|ns
~~ee~~|VCC= -10V, IC= -1A
IB1= IB2= -10mA
~~ee~~| |Turn-off Time
~~ee~~|toff
~~ee~~|-
~~ee~~|670
~~ee~~|-
~~ee~~|ns
~~ee~~|| Notes: 12. Measured under pulsed conditions. Pulse width ≀ 300Β΅s. Duty cycle ≀ 2%. ZXTC6718MC Document number: DS31927 Rev. 4 - 2 6 of 9 **www.diodes.com** October 2012 Β© Diodes Incorporated **A Product Line of Diodes Incorporated** **ZXTC6718MC** ## BOB ## **PNP - Typical Electrical Characteristics** (@TA = +25Β°C, unless otherwise specified.) **==> picture [438 x 539] intentionally omitted <==** **----- Start of picture text -----**
1 0.25
Tamb=25Β°C I C /I B =50
0.20
100Β°C
100m Set A PA am 0.15 SAUMUR
a IC/IB=100 a Z| ATI 25Β°C
a 0.10 TT SATT
sommmeegars I C /I B =50 recone) ae CHOICE.Pr CT,CSanCA -55Β°C Hill
10m 0.05
ae IC/IB=10 e AATDee lll
SG i sie seeciiermaa 0.00 PEN TLEa ualPETITE TTT
1m 10m 100m 1 10 1m 10m 100m 1 10
IC Collector Current (A) IC Collector Current (A)
V v I V v I
CE(SAT) C CE(SAT) C
1.4 630
1.2 ernest 100Β°C | VCE=2V 540 1.0 I C /I B =50 LIM A
FFmaa a HEC S S N Hit FMC FALet A
1.0 PETITTT TNT TTT 450 0.8 PT TTTL ot eTill
0.8 25Β°C 360 -55Β°C
llCeri TSAOPe NTE TTT at_ aaaLeB= slil ATTI
0.6 0 aTT 270 0.6 a 25Β°C B=. tt β€” eePali lll
0.4 NNmani -55Β°C = ll| 180 =TT anil oi.er 100Β°C ETT UTI
0.2 Sonn, CaS 90 0.4 ie
EH HH rH A TCH nT
0.0 0, 0 PE TATIM ETI ELE LTT
1m 10m 100m 1 10 1m 10m 100m 1 10
IC Collector Current (A) IC Collector Current (A)
h v I V v I
FE C BE(SAT) C
1.0 V CE =2V
a a
Nl
0.8
PTIrr
-55Β°C
0.6 a Al
| ty eco |A |
25Β°C
a et
0.4 100Β°C
eeSe i e d ner PUTTIN aL TT
0.2 PITTFFT
1m 10m 100m 1 10
IC Collector Current (A)
V v I
BE(ON) C
(V) (V)
CE(SAT) CE(SAT)
V V
)
FE
(V)
BE(SAT)
V
Normalised Gain
Typical Gain (h
(V)
BE(ON)
V
**----- End of picture text -----**
ZXTC6718MC Document number: DS31927 Rev. 4 - 2 7 of 9 **www.diodes.com** October 2012 Β© Diodes Incorporated **A Product Line of Diodes Incorporated ZXTC6718MC** | ## **Package Outline Dimensions** Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. **==> picture [318 x 175] intentionally omitted <==** **----- Start of picture text -----**
W-DFN3020-8
A A3 Type B
Dim Min Max Typ
ee A1 a ee A 0.77 0.83 0.80
A1 0 0.05 0.02
D A3 - - 0.15
b 0.25 0.35 0.30
ee D 2.95 3.075 3.00
D2 0.82 1.02 0.92
D4 D4 D4 1.01 1.21 1.11
e - - 0.65
Peer D2 oo
E E 1.95 2.075 2.00
E2
E2 0.43 0.63 0.53
Z b e L 0.25 0.35 0.30
L FP LC β€”}β€”} Z - - 0.375
All Dimensions in mm
**----- End of picture text -----**
## **Suggested Pad Layout** Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. **==> picture [137 x 108] intentionally omitted <==** **----- Start of picture text -----**
C X
Y1
G1
G dota
Y2
Y
LL
X1
MO OU
**----- End of picture text -----**
|**Dimensions**|**Value(in mm)**| |---|---| |**C**|0.650| |**G**|0.285| |**G1**|0.090| |**X**|0.400| |**X1**|1.120| |**Y**|0.730| |**Y1**|0.500| |**Y2**|0.365| ZXTC6718MC Document number: DS31927 Rev. 4 - 2 8 of 9 **www.diodes.com** October 2012 Β© Diodes Incorporated **A Product Line of Diodes Incorporated ZXTC6718MC** ~~[~~ ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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