# Bipolar Transistor Array, Complementary NPN and PNP, 20 V, 20 V, 4 A, 4 A, 1.1 W

![Product image](https://novapart.co/image/farnell:3944369/)

**URL**: https://novapart.co/products/ZXTC2062E6TA/bipolar-transistor-array-complementary-npn-and-pnp
**SKU**: ZXTC2062E6TA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT
**Price**: €0.2600
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Product Range | - |
| Qualification | - |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | Complementary NPN and PNP |
| Power Dissipation Npn | 1.1W |
| Power Dissipation Pnp | 1.1W |
| Transistor Case Style | SOT-26 |
| Transition Frequency Npn | 215MHz |
| Transition Frequency Pnp | 290MHz |
| Operating Temperature Max | 150°C |
| Dc Current Gain Hfe Min Npn | 140hFE |
| Dc Current Gain Hfe Min Pnp | 140hFE |
| Continuous Collector Current Npn | 4A |
| Continuous Collector Current Pnp | 4A |
| Collector Emitter Voltage Max Npn | 20V |
| Collector Emitter Voltage Max Pnp | 20V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3944369/)

**A Product Line of Diodes Incorporated** | **ZXTC2062E6** [ 

## **20V COMPLEMENTARY MEDIUM POWER TRANSISTORS IN SOT26** 

## **Features** 

## **Mechanical Data** 

- NPN + PNP Combination 

- BVCEO > 20 (-20)V 

- BVEBO > 7 (-7)V 

- Continuous Collector Current IC = 4 (-3.5)A 

- VCE(sat) < 50 (-65)mV @ 1A 

- RCE(sat) = 35 (54)mΩ 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

   - Case: SOT26 

   - Case Material: Molded Plastic, “Green” Molding Compound 

   - UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 

   - Weight: 0.015 grams (Approximate) 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Applications** 

- MOSFET and IGBT Gate Driving 

- Motor Drive 

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**----- Start of picture text -----**<br>
SOT26<br>C1 C2<br>C1 E1<br>B1 B2 B1 B2<br>Q1 OO Q2 C2 =| E2<br>M | | | |<br>E1 E2<br>Top View  Device Symbol Top View<br>Pin-Out<br>Ordering Information (Note 4)<br>Product Marking Reel size (inches) Tape width (mm) Quantity per reel<br>ZXTC2062E6TA 2062  7  8  3,000<br>———<br>**----- End of picture text -----**<br>


- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/ for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free. 3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com. 

## **Marking Information** 

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**----- Start of picture text -----**<br>
SOT26<br>2062 = Product Type Marking Code<br>YM = Date Code Marking<br>2062 Y [M] Y or Y = Year (ex: C = 2015)<br>M or M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025<br>Code C  D  E  F  G  H  I  J  K  L  M<br>[pf | | | |} }— }—_}H<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>Code 1  2  3 4  5 6 7  8 9 O N  D<br>ee<br>**----- End of picture text -----**<br>


1 of 9 **www.diodes.com** 

ZXTC2062E6 Document Number: DS33647 Rev. 3 - 2 

March 2015 © Diodes Incorporated 

**A Product Line of** 

**Diodes Incorporated** 

## **ZXTC2062E6** ~~oe~~ 

## **Absolute Maximum Ratings – Q1 (NPN Transistor)** (@TA = +25°C, unless otherwise specified.) 

|**Characteristic**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Collector-Base Voltage|VCBO|100|V|
|Collector-Emitter Voltage|VCEO|20|V|
|Emitter-Collector Voltage(reverse blocking)|VECO|5|V|
|Emitter-Base Voltage|VEBO|7|V|
|Continuous Collector Current|IC|4|A|
|Peak Pulsed Collector Current|ICM|10|A|
|Base Current|IB|1|A|



## **Absolute Maximum Ratings – Q2 (PNP Transistor)** (@TA = +25°C, unless otherwise specified.) 

|**Characteristic**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Collector-Base Voltage|VCBO|-25|V|
|Collector-Emitter Voltage|VCEO|-20|V|
|Emitter-Collector Voltage(reverse blocking)|VECO|-4|V|
|Emitter-Base Voltage|VEBO|-7|V|
|Continuous Collector Current|IC|-3.5|A|
|Peak Pulsed Collector Current|ICM|-10|A|
|Base Current|IB|-1|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation<br>Linear Derating Factor|(Notes 5 & 9)|PD|0.7<br>5.6|W<br>mW/°C|
||(Notes 6 & 9)||0.9<br>7.2||
||(Notes 6 & 10)||1.1<br>8.8||
||(Notes 7 & 9)||1.1<br>8.8||
||(Notes 8 & 9)||1.7<br>13.6||
|Thermal Resistance, Junction to Ambient|(Notes 5 & 9)|RθJA|179|°C/W|
||(Notes 6 & 9)||139||
||(Notes 6 &10)||113||
||(Notes7& 9)||113||
||(Notes 8 & 9)||73||
|Thermal Resistance,Junction to Lead|(Note 11)|RθJL|87.5||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **ESD Ratings** (Note 12) 

|**ESD Ratingsgss **(Note 12)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge - Human BodyModel|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|400|V|C|



Notes: 5. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

6. Same as Note (5), except the device is surface mounted on 25mm x 25mm 1oz copper. 

7. Same as Note (5), except the device is surface mounted on 50mm x 50mm 2oz copper. 

8. Same as Note (7), except the device is measured at t < 5 seconds. 

9. For device with one active die, both collectors attached to a common heatsink. 

10. For device with two active dice running at equal power, split heatsink 50% to each collector. 

11. Thermal resistance from junction to solder-point (at the end of the collector lead). 

12. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

2 of 9 **www.diodes.com** 

ZXTC2062E6 Document Number: DS33647 Rev. 3 - 2 

March 2015 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXTC2062E6** 

## **Thermal Characteristics and Derating Information** 

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**----- Start of picture text -----**<br>
R R<br>DS(on) DS(on)<br>10 Limit DEE eee 10 Limit tt<br>= SS=== ai<br>_SSN =~a<br>1 |_| ES4)  ESA[| 1 TeerLT SAK<br>DC<br>DC<br>1s<br>; (| 100ms 7 T yy17ARIZASESSNAN |— 1s 100ms |JJASINSSSOS 7 NT<br>100m NPN 10ms JTS 100m | | | PNP 10ms JIS<br>Tamb=25 ° C 1ms ee ee Tamb=25°C 1ms eee<br>10m 50mm x 50mmOne active die 2oz FR4 pT 100µs 10m 50mm x 50mmOne active 2oz FR4die oo 100µs<br>100m 1 10 0.1 1 10<br>VCE  Collector-Emitter Voltage (V) -VCE  Collector-Emitter Voltage (V)<br>Safe Operating Area Safe Operating Area<br>2.0<br>110 TaeM 50mm x 50mm 2oz FR4<br>100 oTOC oe eer TTT One activ die,  t < 5 sec<br>90 ALo 1.5 PooIN 25mm x 25mm 1oz FR4<br>80 ConCon CA geTy two activ die<br>E/T<br>70 D=0.5 Coon DAT enTy 50mm x 50mm 2oz FR4<br>60 SlSe srr || mmnill)/ All T amb =25°C || 1.0 PAL OA /»S One activ die<br>50 nA 50mm x 50mm 2oz FR4 | <i 25mm x 25mm 1oz FR4<br>40 Con oi gy One activ die | iz One activ die<br>D=0.2 AA<br>30 SaETZ/BP // (mul D=0.1 | | 0.5 ——~—>»va<br>etal, | ———— wy, “<br>20100 TTmethto e r TeTLANill NN| N Single PulseD=0.05 (Oo|CoACoCaCOCOoonCro 0.0 15mm x 15mm 1oz FR4One activ die aS SSS“Sy~<br>100µ 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 120 140 160<br> Pulse Width (s)  Temperature (°C)<br>Transient Thermal Impedance<br>Derating Curve<br>100<br>EE | oo<br>| Single Pulse Ca<br>YONON oo Tamb=25 ° C |Connll<br>GT) 50mm x 50mm  mill<br>2oz FR4<br>10 SU ee———————————————TATPTTTTeeeSETeeeeeeeeeeeeOo One active die eeeee eeeee Al eee<br>EL<br>PTT CEI POU TCT ETT TTT TTT<br>AE<br>1 VT UIE VIN Tire e e<br>100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s)<br>Pulse Power Dissipation<br>  Collector Current (A)   Collector Current (A)<br>IC -IC<br> Thermal Resistance (°C/W)  Max Power Dissipation (W)<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


3 of 9 **www.diodes.com** 

ZXTC2062E6 Document Number: DS33647 Rev. 3 - 2 

March 2015 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXTC2062E6** 

**Electrical Characteristics – Q1 (NPN Transistor)** (@TA = +25°C, unless otherwise specified.) 

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||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|QO|Characteristic|Symbol|Min|(OR|Typ|Max|(OQ|Unit|Test Condition|
|Pe|OFF CHARACTERISTICS|
|DQ|Collector-Base Breakdown Voltage|BVCBO|GO|100|QO|140|QO||(QO|V|IC = 100µA, IE = 0|
|DG|Collector-Emitter Breakdown Voltage (Note 13)|BVCEO|20|GO|35|GO||GO|V|IC = 10mA, IB = 0|
|Pee|Emitter-Base Breakdown Voltage|BVEBO|7|8.3||V|IE = 100µA, IC = 0|
|Emitter-Collector breakdown voltage (base open)|BVECO|5|6||V|IE = 100µA|
|ee|Collector Cutoff Current|ICBO||<1|0.5 50|nA µA|VVCBCB = 100V  = 100V, TA = +100°C|
|Pee|Collector Cutoff Current|efee|IEBO|ee||ee|<1|50|ee|nA|VEB = 5.6V|ee|
|FT|ON CHARACTERISTICS|(Note 13)|
|300|450|900|IC = 10mA, VCE = 2V|
|DC Current Gain|hFE|280 140|420 210|||IICC = 1A, V = 4A, VCECE = 2V   = 2V|
||15||IC = 15A, VCE = 2V|
|40|50|IC = 1.0A, IB = 100mA|
|Collector-Emitter Saturation Voltage|VCE(sat)||60 95|115 75|mV|IICC = 1.0A, I = 2.0A, IB B = 20mA = 40mA|
|140|190|IC = 4A, IB = 200mA|
|DG|Base-Emitter Saturation Voltage|VBE(sat)||GO|940|GO|1,050|(OO|mV|IC = 4A, IB = 200mA|
|Pee|Base-Emitter Turn-On Voltage|VBE(on)||810|900|mV|IC = 4A, VCE = 2V|
|FC|SMALL SIGNAL CHARACTERISTICS|
|DG|Output Capacitance|Cobo||GOD|17|GO|25|(OO|pF|VCB = 10V, f = 1.0MHz|
|Pee|Current Gain-Bandwidth Product|ef|fT||215||MHz|VCE = 10V, IC = 50mA, f = 100MHz|
|GO|Delay Time|td||68|(||ns|
|GODG|Rise Time Storage Time|ttsr||OO|361 72||ns ns|VCC = 10V, IC = 1A, IB1 = -IB2 = 10mA|
|DD|Fall Time|tf||64||ns|
|Notes:|13. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.|

**----- End of picture text -----**<br>


4 of 9 **www.diodes.com** 

ZXTC2062E6 Document Number: DS33647 Rev. 3 - 2 

March 2015 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXTC2062E6** 

**Electrical Characteristics – Q2 (PNP Transistor)** (@TA = +25°C, unless otherwise specified.) 

**==> picture [521 x 279] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|a|Characteristic|GG|Symbol|Min|Typ|Max|GG|Unit|Test Condition|
|CF|OFF CHARACTERISTICS|
|GO|Collector-Base Breakdown Voltage|BVCBO|-25|GO|-55||GO|V|IC = -100µA, IE = 0|
|GO|Collector-Emitter Breakdown Voltage (Note 13)|BVCEO|-20|GO|-45||(OO|V|IC = -10mA, IB = 0|
|Emitter-Base Breakdown Voltage|BVEBO|-7|-8.3||V|IE = -100µA, IC = 0|
|ee|Collector Cutoff Current Collector Cutoff Current|IICBOEBO|es|ee| |< -1 < -1|-0.5 -50 -50|nA µnA A|VVVCBCBEB = -5.6V  = -25V  = -25V, TA = +100°C|
|OD|(OO|
|Cn|ON CHARACTERISTICS|(Note 13)|
|300|450|900|IC = -10mA, VCE = -2V|
|DC Current Gain|hFE|170 65|300 100|||IICC = -1.0A, V = -3.5A, VCECE = -2V   = -2V|
||15||IC = -10A, VCE = -2V|
|-55|-65|IC = -1.0A, IB = -100mA|
||-100|-135|IC = -1.0A, IB = -20mA|
|Collector-Emitter Saturation Voltage|VCE(sat)| |-185 -190|-280 -250|mV|IICC = -2.0A, I = -3.5A, IB B = -40mA = -175mA|
|GO|Base-Emitter Saturation Voltage|VBE(sat)||-925|-1,000|mV|IC = -3.5A, IB = -175mA|
|GO|(OO|
|GS|Base-Emitter Turn-On Voltage|VBE(on)||-835|-900|mV|IC = -3.5A, VCE = -2V|
|GO|GOO|
|CF|SMALL SIGNAL CHARACTERISTICS|
|GO|Output Capacitance|Cobo||GO|21|30|GO|pF|VCB = -10V, f = 1.0MHz|
|GO|Current Gain-Bandwidth Product|fT||290||GO|MHz|VCE = -10V, IC = -50mA, f = 100MHz|
|a|Delay Time|td||56||ns|
|a|Rise Time|tr||68||ns|VCC = -10V, IC = -1A,|
|a|Storage Time|ts||158||ns|IB1 = -IB2 = -10mA|
|a|Fall Time|tf||59||ns|

**----- End of picture text -----**<br>


Note: 13. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. 

5 of 9 **www.diodes.com** 

ZXTC2062E6 Document Number: DS33647 Rev. 3 - 2 

March 2015 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXTC2062E6** 

## DIODES. 

## **Typical Electrical Characteristics – Q1 (NPN Transistor)** (@TA = +25°C, unless otherwise specified.) 

**==> picture [433 x 540] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 0.5<br>Tamb=25°C IC/IB=100 0.4 I C /I B =10<br>100m nL TT I ee C /I B =50 iy a) i) ane Coin Cn TET Ce|<br>0.3<br>Streit | | )/<br>150°C<br>0.2<br>10m eee I Iu C /I B =20 ri ET 100°C yin<br>eet) eal PTTTT Te<br>1m CerETI TET ETT IC/IB=10 PITCo 0.10.0 eZeT| -55°C25°C<br>1m 10m 100m 1 10 1m 10m 100m 1 10<br> IC   Collector Current (A)  IC   Collector Current (A)<br>V  v I V  v I<br>CE(SAT) C CE(SAT) C<br>1.2<br>1.4 ST 150°C emer V CE =2V 700 I C /I B =10 TY<br>25°C<br>eee LE 600 1.0 Sl Te<br>1.2 timeet itlTINT TTT ys -55°C SULSA~ Sh<br>1.0 100 ° C 500<br>0.8 eeeECpe TTTSPRINGTTI 400 0.8 |LE eeIII Of,<br>25°C TT TINT ee ee ee ae<br>0.6 EHHHE TTT TIT NHQT 300 0.6 ae memeee er call ZN 150°C<br>Lt ee | NTT at —- ae <a<br>0.4 -55°C 200 100 ° C<br>pT TS TT<br>0.2 100 0.4<br>St HEetTTT eaPTT ethNTT ———SHH<br>0.0 FP Fen F FP 0 cs0<br>1m 10m 100m 1 10 1m 10m 100m 1 10<br> IC   Collector Current (A)  IC   Collector Current (A)<br>h  v I V  v I<br>FE C BE(SAT) C<br>1.0<br>V CE =2V -55°C 25°C<br>0.8 ee<br>Se A<br>0.6<br>CT a ea<br>150°C<br>AS<br>0.4<br>pT<br>100°C<br>Se TM<br>0.2 TN UI TTT EET<br>1m 10m 100m 1 10<br> IC   Collector Current (A)<br>V  v I<br>BE(ON) C<br>  (V)   (V)<br>CE(SAT) CE(SAT)<br> V  V<br>)<br>FE<br>  (V)<br>BE(SAT)<br> V<br>Normalised Gain<br> Typical Gain (h<br> (V)<br>BE(ON)<br> V<br>**----- End of picture text -----**<br>


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ZXTC2062E6 Document Number: DS33647 Rev. 3 - 2 

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**A Product Line of Diodes Incorporated** 

**ZXTC2062E6** 

## DIODES. 

## **Typical Electrical Characteristics – Q2 (PNP Transistor)** (@TA = +25°C, unless otherwise specified.) 

**==> picture [437 x 543] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 0.6<br>Tamb=25°C I C /I B =10<br>ceo A A 0.5 aa<br>po SJ<br>I C /I B =100<br>100m MN 0.4 a<br>0.3<br>neon I C /I B =50 TT ey) ili<br>eer 150°C Hh<br>10m ee IC/IB=20 | 0.2 PAI TH 100°C ~Yf<br>Pton I C /I B =10 ai] 0.1 aIlll IWZa 25°C<br>1m 0 0.0 eneAA -55°C<br>1m 10m 100m 1 10 1m 10m 100m 1 10<br>- IC   Collector Current (A) - IC   Collector Current (A)<br>V  v I V  v I<br>CE(SAT) C CE(SAT) C<br>1.81.6 enwei 150°C V CE =2V 900850800750 1.2 Ce I C /I B =10 /<br>1.4 700650 1.0 -55°C 25°C<br>1.2 Sentient 100 ° C See 600550 int IMCL<br>1.0 Fyeet  LN 500450 0.8 Deh|<br>0.8 25°C 400350 150°C<br>0.6 FenSC EHcr PNPRSNHEH 300250 0.6 Aleeaae 100°C<br>0.4 -55 ° C 200150<br>0.2 a.a ce 100 0.4 Sameertim HHH<br>0.0 Poi peeeS 0 [50] Teilttti<br>1m 10m 100m 1 10 1m 10m 100m 1 10<br>- IC   Collector Current (A) - IC   Collector Current (A)<br>h  v I V  v I<br>FE C BE(SAT) C<br>1.2<br>V =2V<br>CE<br>1.0<br>coa<br>-55°C 25°C<br>0.8 ia eeenee<br>Pu ea<br>aeame<br>0.6<br>ee AeA<br>150°C<br>0.4 SetMa 100°C<br>pn etloae<br>erm TE<br>0.2 ee Cmot<br>1m 10m 100m 1 10<br>- IC   Collector Current (A)<br>V  v I<br>BE(ON) C<br>  (V)   (V)<br>CE(SAT) CE(SAT)<br>- V - V<br>)<br>FE<br>  (V)<br>BE(SAT)<br>- V<br>Normalised Gain<br> Typical Gain (h<br> (V)<br>BE(ON)<br>- V<br>**----- End of picture text -----**<br>


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ZXTC2062E6 Document Number: DS33647 Rev. 3 - 2 

March 2015 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXTC2062E6** [| 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

SOT26 

**==> picture [416 x 210] intentionally omitted <==**

**----- Start of picture text -----**<br>
D SOT26<br>Dim Min Max Typ<br>A1 0.013 0.10 0.05<br>A2 1.00 1.30 1.10<br>| A3 | 0.70 | 0.80 | 0.7 | 5<br>- | Ey b 0.35 0.50 0.38<br>E1 “ E | c 0.10 0.20 0.15<br>D 2.90 3.10 | 3.00<br>e -  -  0.95<br>1 | |er eE1 | 2.7- 0 | 3.- 00 | 2.1.8090 |<br>b E1 1.50 1.70 1.60<br>ae a1 === L 0.35 0.55 0.40<br>e1 a -  -  8°<br>a1 -  -  7°<br>| | All Dimensions in mm | | | |<br>A2<br>A1<br>A3<br>Seating Plane a<br>J o e b c = L<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

SOT26 

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**----- Start of picture text -----**<br>
C1<br>Dimensions Value (in mm)<br>C 2.40<br>C1 0.95<br>G 1.60<br>Y1 Y1 G C Cc<br>X 0.55<br>Y 0.80<br>|<br>Y1 3.20<br>ane Y ==<br>“oo0°<br>X<br>**----- End of picture text -----**<br>


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ZXTC2062E6 Document Number: DS33647 Rev. 3 - 2 

March 2015 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** |ZETEX **ZXTC2062E6** TT 

## DIODES. 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated **www.diodes.com** 

9 of 9 **www.diodes.com** 

ZXTC2062E6 Document Number: DS33647 Rev. 3 - 2 

March 2015 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/ZXTC2062E6TA/bipolar-transistor-array-complementary-npn-and-pnp)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/zxtc2062e6ta/bipolar-array-npn-pnp-20v-4a-sot/dp/3944369)
---

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