# Bipolar (BJT) Single Transistor, NPN, 45 V, 3 A, 3 W, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1843755/)

**URL**: https://novapart.co/products/ZXT690BKTC/bipolar-bjt-single-transistor-npn-45-v-3-a-w-to
**SKU**: ZXT690BKTC
**Manufacturer**: DIODES INC.
**Price**: €0.4050
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:150MHz; Power Dissipation Pd:3W; DC Collector Current:3A; DC Current Gain hFE:500hFE; Transistor Case

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 3W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 150MHz |
| Transistor Case Style | TO-252 (DPAK) |
| Dc Current Gain Hfe Min | 500hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 3A |
| Collector Emitter Voltage Max | 45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1843755/)

**ZXT690BK** ~~—~~ **45V NPN HIGH GAIN MEDIUM POWER TRANSISTOR** 

**==> picture [29 x 37] intentionally omitted <==**

**----- Start of picture text -----**<br>
Green<br>®<br>**----- End of picture text -----**<br>


## **Features** 

## **Mechanical Data** 

- BVCEO > 45V 

- IC = 3A High Continuous Collector Current 

- ICM = 6A Peak Pulse Current 

- High Gain Device >400 @1A 

- RCE(SAT) = 77mΩ for Low Equivalent On-Resistance 

- hFE Specified Up to 6A for a High Gain Hold Up 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

   - Case: TO252 (DPAK) 

   - Case Material:  Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish – Matte Tin Plated Leads. Solderable per MILSTD-202, Method 208 **e3** 

   - Weight: 0.34 grams (Approximate) 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP capable (Note 4)** 

## **Applications** 

- DC-DC Converters 

- Power Switches 

- IGBT & MOSFET Gate Drivers 

- Motor Control 

- Automotive Circuits 

 

- Siren Drivers 

**==> picture [322 x 134] intentionally omitted <==**

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C<br>TO252 (DPAK)  C<br>B<br>C<br>ea@ © |,<br>E B E<br>Top View  Equivalent Circuit  Package Pin<br>Configuration<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|
|---|---|---|---|---|---|
|||||||
|**Product**|**Compliance**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity per Reel**|
|ZXT690BKTC|AEC-Q101|ZXT690B|13|16|2,500|
|ZXT690BKQTC|Automotive|ZXT690B|13|16|2,500|



- Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to https://www.diodes.com/quality/. 

   5. For packaging details, go to our website at http://www.diodes.com/products/packages.html 

## **Marking Information** 

ZXT690B = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 17 = 2017) WW = Week Code (01 – 53) 

1 of 7 **www.diodes.com** 

ZXT690BK Document number: DS31996 Rev. 5 - 2 

April 2017 © Diodes Incorporated 

**ZXT690BK** 

## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|BVCBO|60|V|
|Collector-Emitter Voltage|BVCEO|45|V|
|Emitter-Base Voltage|BVEBO|7|V|
|Continuous Collector Current|IC|3|A|
|Peak Pulse Current|ICM|6|A|
|Base Current|IB|0.5|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation|(Note 6)|PD|4.0|W|
||(Note 7)||3.4||
||(Note 8)||2.1||
||(Note 9)||1.6||
|Thermal Resistance, Junction to Ambient Air|(Note 6)|RθJA|32|°C/W|
||(Note 7)||36||
||(Note 8)||59||
||(Note 9)||80||
|Thermal Resistance, Junction to Leads|(Note 10)|RθJL|3||
|Thermal Resistance, Junction to Case|(Note 11)|RθJC|14.6||
|Operating and Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



## **ESD Ratings** (Note 12) 

|**ESD Ratingsgss **(Note 12)|**ESD Ratingsgss **(Note 12)|**ESD Ratingsgss **(Note 12)|**ESD Ratingsgss **(Note 12)|**ESD Ratingsgss **(Note 12)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge - Human BodyModel|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|400|V|C|



- Notes: 6. For a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 

   7. Same as Note (6), except mounted on 25mm x 25mm 2oz copper. 

   8. Same as Note (6), except mounted on 25mm x 25mm 1oz copper. 

   9. Same as Note (6), except mounted on minimum recommended pad (MRP) layout. 

   10. Thermal resistance from junction to solder-point (on the exposed collector pad). 

   11. Thermal resistance from junction to the top of the case. 

   12. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

2 of 7 **www.diodes.com** 

ZXT690BK Document number: DS31996 Rev. 5 - 2 

April 2017 © Diodes Incorporated 

**ZXT690BK** [| 

## Lr 

## **Thermal Characteristics and Derating Information** 

**==> picture [497 x 595] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 V CE(sat) 10 V CE(sat)<br>Limit Limit<br>|lle eaea — sss ne pee—<—s.—.-<_ae ee<br>eT | TT UT UN NNT NTT YT TT ee eee eS TE |<br>ee ata oe eee ee A STAN<br>1 DC 1 DC<br>1s<br>ee 1s tv an eteee ea NN Ve EEE SEES IONE<br>pT fT 7 tT TAT TT UA ASATTTTT ee AT oT TTT IAZAT NSATTTTT<br>100ms 100ms<br>100m ptt [ 10ms Tt TAT ENZO N ATT 100m TTT. 10ms TTT BRN Inni<br>Ett Tamb=25°C S 1ms iy T amb =25°C  tA 1ms<br>25mm x 25mm  50mm x 50mm<br>1oz FR4 100µs 2oz FR4 100µs<br>10m ESSCH.TP, ASEotAT  InnE 10m EyCe.AAT oo  inal<br>1 10 1 10<br>VCE  Collector-Emitter Voltage (V) VCE  Collector-Emitter Voltage (V)<br>Safe Operating Area Safe Operating Area<br>60<br>Tn on oo 3030 Too<br>5060 a TTamb amb =25°C=25°C HA 7, al TT ambamb =25=25°C ° C HA ARN7a<br>a 25mm x 25mm  25mm x 25mm  1 A" A 25 al 50mm x 50mm 50mm x 50mm  He eH<br>405 0 1oz FR4 1oz FR4 2oz FR42oz FR4<br>a my ll 2 00 Bl MIN eer ge TT<br>4 0 D=0.5<br>et D=0.5D=0.5 eT<br>30 D=0.5 TOMA CT ae We<br>ts LA 15 ee TTT<br>3 0 ALZ PM LIM LATTEPTR| TIT LTT<br>2020 EAPN D=0.2D=0.2 aeWA Single PulseSingle Pulse | 1010 D=0.2D=0.2 aneageal HM vab’ Single Pulse mT Single Pulse N. rnI<br>1010 CT= sein erSEZeS D=0.05 D=0.05 iil | 5 Seesnaist eet7 al D=0.05D=0.05 Ti<br>— or D=0.1 = =e D=0.1<br>00 erooietT D=0.1 PTTS 00 commr C D=0.1 MT<br>10100µ 0µ 1m 1m 10m 10m 100m 100m 1 1 10 10 100 100 1 1kk 100µ1 00µ 1m 1m 10m 10m 100m 100m 1 1 10 10 100 100 1k1k<br> Pulse Width (s) Pulse Width (s)<br> Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Transient Thermal Impedance<br>Transient Thermal Impedance Transient Thermal Impedance<br>4.5<br>SRESEECTT TTTEeTTI TTT Single PulseSingle Pulse aall 4.04.0 ee<br>100 TT ambamb =25=25°C°C 3.53.5 50mm x 50mm 50mm x 50mm<br>100 CAPRI I 3.0 HIN 2oz FR42oz FR4 HH<br>3.0<br>50mm x 50mm 50mm x 50mm 2oz FR42oz FR4 2.52.5 25mm x 25mm 25mm x 25mm  1oz FR4 1oz FR4<br>ee = PE KT |<br>FH FHSSAHi 2.02.0 PetaEN a<br>101 0<br>1 .5.5<br>1 .0.0<br>yNy<br>25mm x 25mm<br>Cn oT 25mm x 25mm  Tt -CMSS 0 .5.5 ee Ne<br>1oz FR4<br>1oz FR4<br>1 1 CTT TT UAE 0.00.0 P| ty te [USS] 2<br>100µ100µ 1m1m 10m10m 100m100m 11 1010 100100 1k1k 00 2020 4040 6060 8080 100100 120120 140140 160160<br>Pulse Width (s)Pulse Width (s)  Temperature (°C) Temperature (°C)<br>Pulse Power DissipatPulse Power Dissipation Derating CurveDerating Curve<br>  Collector Current (A)   Collector Current (A)<br>IC IC<br> Thermal Resistance (°C/W) Thermal Resistance (°C/W)<br> Max Power Dissipation (W)  Max Power Dissipation (W)<br> Thermal Resistance (°C/W) Thermal Resistance (°C/W)<br> Max Power Dissipation (W)  Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


3 of 7 **www.diodes.com** 

ZXT690BK Document number: DS31996 Rev. 5 - 2 

April 2017 © Diodes Incorporated 

**ZXT690BK** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~po~~|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|Collector-Base Breakdown Voltage<br>~~po~~<br>~~pp~~<br>~~**p**o~~|BVCBO<br>~~pp~~|60<br>~~pp~~|145<br>~~pp~~|<br>~~pp~~|V<br>~~pp~~|IC= 100μA<br>~~pp~~|
|Collector-Emitter Breakdown Voltage (Note 13)<br>~~**p**o~~|BVCEO|45|65||V|IC= 10mA|
|Emitter-Base Breakdown Voltage<br>~~**p**o~~<br>~~pO~~|BVEBO|7<br>~~p~~|8.2<br>~~p~~|<br>~~p~~|V<br>~~p~~|IE= 100μA<br>~~p~~|
|Collector Cutoff Current<br>~~pO~~<br>~~**p**o~~|ICBO||<1|20|nA|VCB= 35V|
|Collector Cutoff Current<br>~~pO~~<br>~~**p**o~~|ICES||<1|20|nA|VCE= 35V|
|Emitter Cutoff Current<br>~~**p**o~~|IEBO|<br>~~p~~|<1<br>~~p~~|20<br>~~p~~|nA<br>~~p~~|VEB= 5.6V<br>~~p~~|
|Collector-Emitter Saturation Voltage (Note 13)<br>~~**p**O~~|VCE(SAT)||50<br>~~a~~|85|mV<br>~~Pp~~|IC= 0.1A, IB= 0.5mA<br>~~po~~|
||||240<br>~~a~~|360||IC= 1A, IB= 5mA<br>~~pO~~|
||||210<br>~~a~~<br>~~a~~|320||IC= 2A, IB= 40mA<br>~~po~~<br>~~Pp~~|
||||230<br>~~a~~|350||IC= 3A, IB= 150mA<br>~~Pp~~|
|Base-Emitter Saturation Voltage (Note 13)<br>~~**p**O~~|VBE(SAT)||1.0<br>~~a~~|1.2|V<br>~~Pp~~|IC= 3A, IB= 150mA<br>~~Pp~~|
|Base-Emitter Turn-On Voltage (Note 13)<br>~~**p**O~~|VBE(ON)|<br>~~O~~<br>~~a~~|0.9<br>~~a~~<br>~~O~~|1.1<br>~~O~~|V<br>~~Pp~~<br>~~O~~<br>~~Pp~~|IC= 3A, VCE= 2V<br>~~Pp~~<br>~~O~~<br>~~Pp~~|
|DC Current Gain (Note 13)<br>~~pO~~|hFE|500<br>~~a~~<br>~~a~~|700||<br>~~Pp~~<br>~~Pp~~<br>~~Pp~~<br>~~Pp~~|IC= 100mA, VCE= 2V<br>~~Pp~~<br>~~Pp~~|
|||400<br>~~a~~<br>~~a~~<br>~~a~~|600|||IC= 1A, VCE= 2V<br>~~Pp~~<br>~~Pp~~<br>~~Pp~~|
|||150<br>~~a~~<br>~~a~~<br>~~a~~|350|||IC= 2A, VCE= 2V<br>~~Pp~~<br>~~Pp~~<br>~~Pp~~|
|||60<br>~~a~~<br>~~a~~|120|||IC= 3A, VCE= 2V<br>~~Pp~~<br>~~Pp~~|
|Current Gain-Bandwidth Product<br>~~pO~~<br>~~pO~~|fT|150<br>~~a~~|||MHz<br>~~Pp~~|IC= 50mA, VCE= 5V, f = 50MHz<br>~~Pp~~|
|Output Capacitance<br>~~pO~~<br>~~pO~~|COBO<br>~~ee~~|<br>~~a~~<br>~~ee~~|16<br>~~ee~~|<br>~~ee~~|pF<br>~~Pp~~<br>~~ee~~|VCB= 10V, f = 1MHz<br>~~Pp~~|
|Turn-On Time<br>~~pO~~<br>~~**e**~~|tON<br>~~**e**~~<br>~~ee~~<br>~~ee~~|<br>~~**e**e~~<br>~~ee~~<br>~~ee~~|33<br>~~e~~<br>~~ee~~<br>~~ee~~|<br>~~e~~<br>~~ee~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~<br>~~ee~~|IC= 500mA, VCC= 10V,<br>IB1= -IB2= 50mA<br>~~e~~<br>~~ee~~|
|Turn-Off Time<br>~~**e**~~|tOFF<br>~~**e**~~<br>~~ee~~<br>~~e~~<br>~~ee~~|<br>~~**e**e~~<br>~~ee~~<br>~~e~~<br>~~ee~~|1,300<br>~~e~~<br>~~ee~~<br>~~e~~<br>~~ee~~|<br>~~e~~<br>~~ee~~<br>~~e~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~<br>~~e~~<br>~~ee~~||



Note: 13. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. 

4 of 7 **www.diodes.com** 

ZXT690BK Document number: DS31996 Rev. 5 - 2 

April 2017 © Diodes Incorporated 

**ZXT690BK** ~~7~~ 

## DIODES 

## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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**----- Start of picture text -----**<br>
1.0<br>Tamb=25°C I /I =100<br>C B -55°C<br>0.8<br>tt = A |<br>100m<br>aan IC/IB=200 me Zan 0.6 25 ° C<br>I C /I B =100 0.4 100°C<br>10m<br>IC/IB=10 0.2<br>1m aSS ag eee = 0.0 aECLITee CL<br>1m 10m 100m 1 10 1m 10m 100m 1<br>IC   Collector Current (A) IC   Collector Current (A)<br>V  v I V  v I<br>CE(SAT) C CE(SAT) C<br>1000<br>1.2 S|a me V CE =2V 900 1.0 I C /I B =100 IMETE EANE | UT<br>100°C 800<br>1.0 ceSEECMI 700 sul TCTee<br>0.8 -55°C<br>0.8 ATH 25°C eerCo e r reat=H Th 600 Ce alpe Y<br>500<br>25°C<br>0.6<br>Prin. UMC CIN CT 400 0.6 TY<br>0.4 SL= AEE -55°C RE 300 AIM ete 100°C Eee UTI<br>nailat am T T TT LTT<br>200<br>0.2 0.4<br>SEH HEHOV 100 SnHa i l tch<br>0.0 on CF 0 eeatit<br>1m 10m 100m 1 10 1m 10m 100m 1 10<br>IC   Collector Current (A) IC   Collector Current (A)<br>h  v I V  v I<br>FE C BE(SAT) C<br>1.0 V CE =2V<br>a ey<br>UE<br>0.8 OE -55°C TT ll<br>a eee<br>25°C<br>0.6 a 7A<br>CTT era TT<br>100°C<br>tet<br>0.4<br>ett<br>THI EAI EPI A<br>1m 10m 100m 1 10<br>IC   Collector Current (A)<br>V  v I<br>BE(ON) C<br>  (V)   (V)<br>CE(SAT) CE(SAT)<br>V V<br>)<br>FE<br>  (V)<br>BE(SAT)<br>V<br>Normalised Gain<br> Typical Gain (h<br> (V)<br>BE(ON)<br>V<br>**----- End of picture text -----**<br>


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ZXT690BK Document number: DS31996 Rev. 5 - 2 

April 2017 © Diodes Incorporated 

**ZXT690BK** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **TO252 (DPAK)** 

**==> picture [520 x 546] intentionally omitted <==**

**----- Start of picture text -----**<br>
E<br>A<br>b3<br>7°±1°<br>c<br>L3<br>TO252 (DPAK)<br>Dim Min  Max  Typ<br>A  2.19 2.39 2.29<br>D A2 A1  0.00 0.13 0.08<br>L4 H A2  0.97  1.17  1.07<br>b  0.64  0.88 0.783<br>b2  0.76  1.14  0.95<br>a b3  5.21  5.46  5.33<br>c  0.45  0.58 0.531<br>D  6.00  6.20  6.10<br>e b(3x) D1  5.21  -  -<br>e  -  -  2.286<br>b2(2x)<br>E  6.45 6.70 6.58<br>0.508 E1  4.32  -  -<br>Gauge Plane<br>H  9.40 10.41  9.91<br>L  1.40  1.78  1.59<br>E1 D1 Seating Plane L3  0.88  1.27  1.08<br>L L4  0.64  1.02  0.83<br>A1<br>a  0°  10°  -<br>2.74REF<br>All Dimensions in mm<br>=<br>Suggested Pad Layout ggested Pad Layout ested Pad Layout yout out<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>TO252 (DPAK)<br>X1 |<br>Y1 Dimensions  Value (in mm)<br>C  4.572<br>a X  1.060<br>Y2 X1  5.632<br>Y  2.600<br>C Y1  5.700<br>LL Y2  10.700<br>Y<br>X<br>a<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout ggested Pad Layout ested Pad Layout yout out** 

6 of 7 **www.diodes.com** 

ZXT690BK Document number: DS31996 Rev. 5 - 2 

April 2017 © Diodes Incorporated 

**ZXT690BK** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2017, Diodes Incorporated 

**www.diodes.com** 

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