# Bipolar Transistor Array, Dual NPN, 20 V, 3.5 A, 1.04 W

![Product image](https://novapart.co/image/farnell:3944365RL/)

**URL**: https://novapart.co/products/ZXT12N20DXTA/bipolar-transistor-array-dual-npn-20-v-35-a-104-w
**SKU**: ZXT12N20DXTA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT
**Price**: €0.6740
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Product Range | SuperSOT4 Series |
| Qualification | - |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | Dual NPN |
| Power Dissipation Npn | 1.04W |
| Power Dissipation Pnp | - |
| Transistor Case Style | MSOP |
| Transition Frequency Npn | 112MHz |
| Transition Frequency Pnp | - |
| Operating Temperature Max | 150°C |
| Dc Current Gain Hfe Min Npn | 200hFE |
| Dc Current Gain Hfe Min Pnp | - |
| Continuous Collector Current Npn | 3.5A |
| Continuous Collector Current Pnp | - |
| Collector Emitter Voltage Max Npn | 20V |
| Collector Emitter Voltage Max Pnp | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3944365RL/)

**ZXT12N20DX** ER 

## **SuperSOT4™ DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR** 

**SUMMARY VCEO=20V; RSAT = 40m ; IC= 3.5A** 

## **DESCRIPTION** 

This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. 

**MSOP8** 

## **FEATURES** 

- Extremely Low Equivalent On Resistance 

**==> picture [387 x 219] intentionally omitted <==**

**----- Start of picture text -----**<br>
C1 C2<br>Extremely Low Saturation Voltage<br>hFE characterised up to 10AFE characterised up to 10A characterised up to 10A<br>IC=3.5A Continuous Collector CurrentC=3.5A Continuous Collector Current=3.5A Continuous Collector Current B1 B2<br>MSOP8 package<br>APPLICATIONS<br>DC - DC Converters<br>E1 E2<br>Power Management Functions<br>Power switches<br>Motor control<br>E1 C1<br>ORDERING INFORMATION B1 C1<br>DEVICE REEL SIZE TAPE WIDTH QUANTITY E2 C2<br>(inches) (mm) PER REEL B2 C2<br>ZXT12N20DXTA 7 12mm embossed 1000 units<br>Top View<br>ZXT12N20DXTC 13 12mm embossed 4000 units<br>:<br>1 8<br>2 7<br>3 6<br>4 5<br>**----- End of picture text -----**<br>


- Extremely Low Saturation Voltage 

- hFE characterised up to 10AFE characterised up to 10A characterised up to 10A 

- IC=3.5A Continuous Collector CurrentC=3.5A Continuous Collector Current=3.5A Continuous Collector Current 

- MSOP8 package 

## **APPLICATIONS** 

- DC - DC Converters 

- Power Management Functions 

- Power switches 

- Motor control 

## **ORDERING INFORMATION** 

## **DEVICE MARKING** 

T12N20DX 

**ISSUE 1 - MARCH 2000** ~~so~~ **1** 

**ZXT12N20DX** 

## **ABSOLUTE MAXIMUM RATINGS.** 

|**ABSOLUTE MAXIMUM RATINGS.**||||
|---|---|---|---|
|PARAMETER|SYMBOL|LIMIT|UNIT|
|Collector-Base Voltage|VCBO|50|V|
|Collector-Emitter Voltage|VCEO|20|V|
|Emitter-Base Voltage|VEBO|7.5|V|
|Peak Pulse Current|ICM|15|A|
|Continuous Collector Current|IC|3.5|A|
|Base Current|IB|500|mA|
|Power Dissipation at TA=25°C (a)(d)<br>Linear Derating Factor|PD|0.87<br>6.9|W<br>mW/°C|
|Power Dissipation at TA=25°C (a)(e)<br>Linear Derating Factor|PD|1.04<br>8.3|W<br>mW/°C|
|Power Dissipation at TA=25°C (b)(d)<br>Linear Derating Factor|PD|1.25<br>10|W<br>mW/°C|
|Operating and Storage Temperature Range|Tj:Tstg|-55 to +150|°C|



## **THERMAL RESISTANCE** 

|**THERMAL RESISTANCE**||||
|---|---|---|---|
|PARAMETER|SYMBOL|VALUE|UNIT|
|Junction to Ambient (a)(d)|RθJA|143|°C/W|
|Junction to Ambient (b)(d)|RθJA|100|°C/W|
|Junction to Ambient (a)(e)|RθJA|120|°C/W|



## NOTES 

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions 

(b) For a device surface mounted on FR4 PCB measured at t�5 secs. 

(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. 

(d) For device with one active die. 

(e) For device with two active die running at equal power. 

**ISSUE 1 - MARCH 2000** 

**2** 

**ZXT12N20DX** 

## **CHARACTERISTICS** 

**==> picture [416 x 342] intentionally omitted <==**

**ISSUE 1 - MARCH 2000** 

**3** 

## **ZXT12N20DX** 

## **ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).** 

|PARAMETER|SYMBOL|MIN.|TYP.|MAX.|UNIT|CONDITIONS.|
|---|---|---|---|---|---|---|
|Collector-Base Breakdown<br>Voltage|V(BR)CBO|50|100||V|IC=100�A|
|Collector-Emitter Breakdown<br>Voltage|V(BR)CEO|20|30||V|IC=10mA*|
|Emitter-Base Breakdown Voltage|V(BR)EBO|7.5|8.5||V|IE=100�A|
|Collector Cut-Off Current|ICBO|||100|nA|VCB=40V|
|Emitter Cut-Off Current|IEBO|||100|nA|VEB=6V|
|Collector Emitter Cut-Off Current|ICES|||100|nA|VCES=40V|
|Collector-Emitter Saturation<br>Voltage|VCE(sat)||7.0<br>65<br>120<br>160|10<br>100<br>160<br>200|mV<br>mV<br>mV<br>mV|IC=0.1A, IB=10mA*<br>IC=1A, IB=10mA*<br>IC=3A, IB=150mA*<br>IC=3.5A, IB=50mA*|
|Base-Emitter Saturation Voltage|VBE(sat)||0.9|1.0|V|IC=3.5A, IB=50mA*|
|Base-Emitter Turn-On Voltage|VBE(on)||0.85|0.9|V|IC=3.5A, VCE=2V*|
|Static Forward Current Transfer<br>Ratio|hFE|250<br>300<br>200<br>40|400<br>450<br>320<br>70|900||IC=10mA, VCE=2V*<br>IC=1A, VCE=2V*<br>IC=3.5A, VCE=2V*<br>IC=10A, VCE=2V*|
|Transition Frequency|fT||112||MHz|IC=50mA, VCE=10V<br>f=50MHz|
|Output Capacitance|Cobo||43||pF|VCB=10V, f=1MHz|
|Turn-On Time|t(on)||65||ns|VCC=10V, IC=2A<br>IB1=IB2=40mA|
|Turn-Off Time|t(off)||400||ns||



*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2% 

**ISSUE 1 - MARCH 2000** 

**4** 

**ZXT12N20DX** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [416 x 510] intentionally omitted <==**

**ISSUE 1 - MARCH 2000** 

**5** 

## **ZXT12N20DX** 

## **PACKAGE DIMENSIONS** 

## **PAD LAYOUT DETAILS** 

**==> picture [193 x 138] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>8 7 6 5<br>1 2 3 4<br>e X 6<br>θ°<br>L<br>B C<br>E H<br>A1<br>**----- End of picture text -----**<br>


Conforms to JEDEC MO-187 Iss A 

|DIM|Millimetres|Millimetres|Inches|Inches|
|---|---|---|---|---|
||MIN|MAX|MIN|MAX|
|A||1.10||0.043|
|A1|0.05|0.15|0.002|0.006|
|B|0.25|0.40|0.010|0.016|
|C|0.13|0.23|0.005|0.009|
|D|2.90|3.10|0.114|0.122|
|e|0.65<br>BSC||0.0256<br>BSC||
|E|2.90|3.10|0.114|0.122|
|H|4.90<br>BSC||0.193<br>BSC||
|L|0.40|0.70|0.016|0.028|
|q°|0°|6°|0°|6°|



Zetex plc. 

Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 

||<br>Fax: (44)161 622 4420|||
|---|---|---|---|
|Zetex GmbH|Zetex Inc.|Zetex (Asia) Ltd.|These are supported by|
|Streitfeldstraße 19|47 Mall Drive, Unit 4|3510 Metroplaza, Tower 2|agents and distributors in|
|D-81673 München|Commack NY 11725|Hing Fong Road,|major countries world-wide|
|Germany|USA|Kwai Fong, Hong Kong|© Zetex plc 2000|
|Telefon: (49) 89 45 49 49 0|Telephone: (631) 543-7100|Telephone:(852) 26100 611||
|Fax: (49) 89 45 49 49 49|Fax: (631) 864-7630|Fax: (852) 24250 494|**Internet:http://www.zetex.com**|



This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. 

I **SSUE 1 - MARCH 2000** 

**6** 



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---

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