# Power MOSFET, Enhancement Mode, N Channel, 60 V, 2.8 A, 0.1 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:1902499/)

**URL**: https://novapart.co/products/ZXMS6006SGTA/power-mosfet-enhancement-mode-n-channel-60-v-28-a
**SKU**: ZXMS6006SGTA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4450
**Stock**: 10+
**Lead Time**: 148 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:2.8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.075ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:1V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| No. Of Pins | 4Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 5V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.8A |
| Drain Source On State Resistance | 0.1ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1902499/)

**A Product Line of Diodes Incorporated** 

## **ZXMS6006SG** 

## **60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE** _**INTELLIFET[®]**_ **MOSFET** 

## **Product Summary** 

- Continuos drain source voltage        60V 

- On-state resistance                          100mΩ 

- Nominal load current (VIN = 5V)        2.8A 

- Clamping Energy                              480mJ 

## **Features and Benefits** 

- Compact high power dissipation package 

- • Low input current 

- Logic Level Input (3.3V and 5V) 

- Short circuit protection with auto restart 

- Over voltage protection (active clamp) 

- Thermal shutdown with auto restart 

## **Description and Applications** 

The ZXMS6006SG is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6006SG is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. 

- Over-current protection 

- Input Protection (ESD) 

- High continuous current rating 

- **Green, RoHS Compliant (Note 1)** 

- **Halogen and Antimony Free. (Note 2)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

- Lamp Driver 

   - Case: SOT-223 

- Motor Driver 

- Relay Driver 

- Solenoid Driver 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Matte Tin Finish 

- Weight: 0.112 grams (approximate) 

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SOT-223<br>**----- End of picture text -----**<br>


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Top View<br>**----- End of picture text -----**<br>


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D<br>IN<br>S<br>Device symbol  Top view<br>Pin Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 3) 

|**Ordering Informationg Information Information** (Note 3)|**Ordering Informationg Information Information** (Note 3)|**Ordering Informationg Information Information** (Note 3)|**Ordering Informationg Information Information** (Note 3)|**Ordering Informationg Information Information** (Note 3)|
|---|---|---|---|---|
||||||
|**Product**|**Marking**|**Reel size (inches)**|**Tape width (mm)**|**Quantity per reel **|
|ZXMS6006SGTA|ZXMS6006S|7|12|1,000|



- Notes: 1. Contain <900ppm bromine, chlorine (<1500ppm total) and <1000ppm antimony compounds. 

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 

3. For packaging details, go to our website at http://www.diodes.com 

## **Marking Information** 

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ZXMS<br>6006S<br>**----- End of picture text -----**<br>


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ZXMS6006S = Product type Marking Code<br>**----- End of picture text -----**<br>


IntelliFET[®] is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 

1 of 9 

ZXMS6006SG Document number: DS35141 Rev. 2 - 2 

November 2011 © Diodes Incorporated 

**www.diodes.com** 

**A Product Line of Diodes Incorporated** 

**ZXMS6006SG** 

## **Functional Block Diagram** 

IntelliFET[®] is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. ZXMS6006SG 2 of 9 November 2011 Document number: DS35141 Rev. 2 - 2 **www.diodes.com** © Diodes Incorporated 

November 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXMS6006SG** 

**Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|
|||||
|**Characteristic**<br>~~RO~~|**Symbol **<br>~~RO~~|**Value**<br>~~RO~~|**Units**<br>~~RO~~|
|Continuous Drain-Source Voltage|VDS|60|V|
|Drain-Source Voltage for short circuitprotection<br>~~a~~|VDS(SC)<br>~~a~~|16<br>~~a~~|V<br>~~a~~|
|Continuous Input Voltage<br>~~a~~|VIN<br>~~a~~|-0.5 ... +6<br>~~a~~|V<br>~~a~~|
|Continuous Input Current @-0.2V ≤ VIN≤ 6V<br>Continuous Input Current@VIN< -0.2V or VIN> 6V<br>~~a~~|IIN<br>~~a~~<br>~~ee ee~~|No limit<br>│IIN │≤2<br>~~a~~<br>~~ee~~|mA<br>~~a~~|
|Pulsed Drain Current@VIN= 3.3V<br>~~ee~~|IDM<br>~~ee~~<br>~~ee ee~~|11<br>~~ee~~<br>~~ee~~|A<br>~~ee~~|
|Pulsed Drain Current@VIN= 5V<br>~~ee~~|IDM<br>~~ee~~<br>~~ee ee~~|13<br>~~ee~~<br>~~ee~~|A<br>~~ee~~|
|Continuous Source Current(BodyDiode) (Note 4)<br>~~ee~~|IS<br>~~ee ee~~<br>~~ee~~|2<br>~~ee~~<br>~~ee~~|A<br>~~ee~~|
|Pulsed Source Current(BodyDiode)<br>~~ee~~|ISM<br>~~ee~~|12<br>~~ee~~|A<br>~~ee~~|
|Unclamped Single Pulse Inductive Energy,<br>TJ= 25°C,ID= 0.5A,VDD= 24V<br>~~a~~|EAS<br>~~a~~|480<br>~~a~~|mJ<br>~~a~~|
|Electrostatic Discharge(Human BodyModel)<br>~~ee~~|VESD<br>~~ee~~|4000<br>~~ee~~|V<br>~~ee~~|
|Charged Device Model<br>~~ee~~|VCDM<br>~~ee~~|1000<br>~~ee~~|V<br>~~ee~~|



## **Thermal Characteristics** @TA = 25°C unless otherwise specified 

|**Thermal Characteristics **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Units**|
|Power Dissipation at TA= 25°C (Note 4)<br>Linear DeratingFactor|PD|1.0<br>8.0|W<br>mW/°C|
|Power Dissipation at TA= 25°C (Note 5)<br>Linear DeratingFactor|PD|1.6<br>12.8|W<br>mW/°C|
|Thermal Resistance,Junction to Ambient(Note 4)|RθJA|125|°C/W|
|Thermal Resistance,Junction to Ambient(Note 5)|RθJA|83|°C/W|
|Thermal Resistance,Junction to Case(Note 6)|RθJC|39|°C/W|
|OperatingTemperature Range|TJ|-40 to +150|°C|
|Storage Temperature Range|TSTG|-55 to +150|°C|



Notes: 4. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditions. Sink split drain 80% and source 20% to isolate connections. 

5. For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in still air conditions. Sink split drain 80% and source 20% to isolate connections. 

6. Thermal resistance between junction and the mounting surfaces of drain and source pins. 

IntelliFET[®] is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. ZXMS6006SG 3 of 9 November 2011 Document number: DS35141 Rev. 2 - 2 **www.diodes.com** © Diodes Incorporated 

November 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXMS6006SG** 

## **Recommended Operating Conditions** 

The ZXMS6006SG is optimized for use with µC operating from 3.3V and 5V supplies. 

|**Characteristic**|**Symbol **|**Min**|**Max **|**Unit**|
|---|---|---|---|---|
|Input voltage range|VIN|0|5.5|V|
|Ambient temperature range|TA|-40|125|°C|
|High Level Input Voltage for MOSFET to be on|VIH|3|5.5|V|
|Low Level Input Voltage for MOSFET to be off|VIL|0|0.7|V|
|Peripheral SupplyVoltage(voltage to which load is referred)|VP|0|16|V|



## **Thermal Characteristics** 

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**----- Start of picture text -----**<br>
Limited HO Limited by Over-Current Protection 1.6 $<<br>10 by R DS(on) 1ms 1.4 50X50X1.6 mm<br>1.2 Single 2oz FR4<br>1 ED aw ST 1.0 ‘<br>DC 1s 0.8<br>100ms 0.6<br>100m PA” Single Pulse PREP SH PoUN<br>Tamb=25°C 10ms 0.4<br>15X15X1.6 mm<br>15X15X1.6 mm<br>10m Single 1oz FR4  Limit of s/c protection 0.2 Single 1oz FR4<br>0.0<br>1 10 0 25 50 75 100 125 150<br>VDS  Drain-Source Voltage (V)  Temperature (°C)<br>Safe Operating Area Derating Curve<br>120 15X15X1.6 mm<br>Single 1oz FR4 100 15X15X1.6 mm<br>100 : T amb =25°C Ha A Siti, Seti sti ee Single 1oz FR4  tf<br>Se au Se at BU ll<br>Single Pulse<br>80 D=0.5 || MN T amb =25°C<br>60 pe LY (ET | 10 EN RRND, ET<br>Single Pulse<br>40<br>D=0.2<br>D=0.05<br>20 ae LUAAY Sk is<br>0 eeemt TL | UT D=0.1 UT UT 1 STPA STEEP CoUP CEES<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>  Drain Current (A)<br>ID<br> Max Power Dissipation (W)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


IntelliFET[®] is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 

4 of 9 

ZXMS6006SG Document number: DS35141 Rev. 2 - 2 

November 2011 © Diodes Incorporated 

**www.diodes.com** 

**A Product Line of Diodes Incorporated** | ~~ZETEX~~ **ZXMS6006SG** ~~J~~ 

**Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|
|~~ee~~<br> ~~—~~|||||||
|**Characteristic**<br>~~ee~~<br> <br>~~——————~~|**Symbol**<br> ~~—~~<br>~~——————~~|**Min**<br>~~—~~<br>~~——————~~|**Typ**<br>~~——————~~|**Max**<br>~~——————~~|**Unit**<br>~~——————~~|**Test Condition**<br>~~——————~~|
|**Static Characteristics**<br>~~ee~~<br> ~~—~~<br>~~——————~~|||||||
|Drain-Source ClampVoltage<br>~~ee~~<br> <br>~~——————~~|VDS(AZ)<br> ~~—~~<br>~~——————~~|60<br>~~—~~<br>~~——————~~|65<br>~~——————~~|70<br>~~——————~~|V<br>~~——————~~|ID= 10mA<br>~~——————~~|
|Off State Drain Current<br>~~ee~~<br> <br>~~fr~~|IDSS<br> ~~—~~<br>~~fr~~|-<br>~~—~~<br>~~fr~~|-<br>~~fr~~|1<br>~~fr~~|µA<br>~~fr~~|VDS= 12V,VIN= 0V<br>~~fr~~|
|||-<br>~~fr~~|-<br>~~fr~~|2<br>~~fr~~||VDS= 36V,VIN= 0V<br>~~fr~~|
|Input Threshold Voltage<br>~~fr~~|VIN(th)<br>~~fr~~|0.7<br>~~fr~~|1<br>~~fr~~|1.5<br>~~fr~~|V<br>~~fr~~|VDS= VGS,ID= 1mA<br>~~fr~~|
|Input Current<br>~~———~~|IIN<br>~~———~~|-<br>~~———~~|60<br>~~———~~|100<br>~~———~~|μA<br>~~———~~<br>~~(QO~~|VIN= +3V<br>~~———~~|
|||-<br>~~———~~|120<br>~~———~~<br>~~GO~~|400<br>~~———~~<br>~~(QO~~||VIN= +5V<br>~~———~~<br>~~(QO~~|
|Input Current While Over Temperature Active<br>~~GG~~|-<br>~~GG~~|-<br>~~GG~~|-<br>~~GG~~<br>~~GO~~|300<br>~~GG~~<br>~~(QO~~|μA<br>~~GG~~<br>~~(QO~~|VIN= +5V<br>~~GG~~<br>~~(QO~~|
|Static Drain-Source On-State Resistance<br>~~ee~~|RDS(on)<br>~~ee~~|-<br>~~ee~~|85<br>~~GO ~~<br>~~ee~~|125<br> ~~(QO~~<br>~~ee~~|mΩ<br>~~(QO~~<br>~~ee~~|VIN= +3V,ID= 1A<br>~~(QO~~<br>~~ee~~|
|||-<br>~~ee~~|75<br>~~ee~~|100<br>~~ee~~||VIN= +5V,ID= 1A<br>~~ee~~|
|Continuous Drain Current (Note 4)<br>~~ee~~|ID<br>~~ee~~|2.0<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|A<br>~~ee~~|VIN= 3V;TA= 25°C<br>~~ee~~|
|||2.2|-|-||VIN= 5V;TA= 25°C|
|Continuous Drain Current (Note 5)<br>~~rr~~||2.6|-|-||VIN= 3V;TA= 25°C|
|||2.8|-|-||VIN= 5V;TA= 25°C|
|Current Limit (Note 7)<br>~~re~~|ID(LIM)<br>~~re~~|4<br>~~re~~|8<br>~~re~~|-<br>~~re~~|A<br>~~re~~|VIN= +3V<br>~~re~~|
|||6<br>~~re~~|13<br>~~re~~|-<br>~~re~~||VIN= +5V<br>~~re~~|
|**Dynamic Characteristics**<br>~~re~~<br>~~——~~<br>~~ee~~|||||||
|Turn On DelayTime<br>~~Po~~<br>~~——~~|td(on)|-|8.6|-<br>~~ee~~|μs<br>~~ee~~|VDD= 12V, ID= 1A, VGS= 5V<br>~~ee~~|
|Rise Time<br>~~——~~|tr|-|18|-<br>~~ee~~|||
|Turn Off DelayTime<br>~~——~~|td(off)|-|34|-<br>~~ee~~|||
|Fall Time<br>~~——~~<br>~~oo~~|ff<br>~~oo~~|-|15|-<br>~~ee~~|||
|**Over-Temperature Protection**<br>~~——~~<br>~~ee~~<br>~~oo~~|||||||
|Thermal Overload TripTemperature(Note 8)<br>~~oo~~|TJT<br>~~oo~~|150|175|-|°C|-|
|Thermal Hysteresis(Note 8)<br>~~oo~~|ff<br>~~oo~~|-|10|-|°C|-|



8. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal operating range, so this part is not designed to withstand over-temperature for extended periods.. 

IntelliFET[®] is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. ZXMS6006SG 5 of 9 November 2011 Document number: DS35141 Rev. 2 - 2 **www.diodes.com** © Diodes Incorporated 

November 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXMS6006SG** 

## **Typical Characteristics** 

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16<br>14 Hee EOE V IN 120 t+ +_+}+-+++_|+f<br>LESS EE 5V<br>12 EfTS ASRS 4.5V4V 100 aee eeeeeeeee<br>108 feHe 3.5V 3V3V 80 eeP| ff eee aeeee<br>2 20000 60 ee<br>6 2.5V<br>|ee 40 po ee eee<br>4 | S>_AneaS esbfee<br>2V<br>2 Po TA = 25°C 20 a<br>0 PECeee PEEP PPE 0 a ae eee eee<br>0 1 2 3 4 5 6 7 8 9 10 11 12 0 1 2 3 4 5<br>VDS  Drain-Source Voltage (V) VIN Input Voltage (V)<br>Typical Output Characteristic Input Current vs Input Voltage<br>1.4<br>0.20 I D  = 1A 1.3 a V IN = V DS<br>So ee ee I D  = 1mA<br>1.2<br>0.15 Se ee<br>Nee | 1.1 eS<br>TJ = 150°C<br>0.10 PNSS | 1.0 ies<br>i eee a a<br>0.9<br>0.05<br>ee TJ = 25°C 0.8 a<br>0.00 a a 0.7 a<br>2.0 2.5 3.0 3.5 4.0 4.5 5.0 -50 -25 0 25 50 75 100 125 150<br>VIN  Input Voltage (V) TJ  Junction Temperature (°C)<br>On-Resistance vs Input Voltage Threshold Voltage vs Temperature<br>0.20<br>10<br>TJ=150°C<br>0.15 SR V IN  = 3V e ee nme<br>= a ae 4 eee<br>1<br>0.10<br>T J =25°C<br>VIN = 5V 0.1<br>0.05 | PNT | ff<br>i A ey Ge ee ee<br>0.00 0.01 ARee<br>-50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0<br>TJ  Junction Temperature (°C)  VSD  Source-Drain Voltage (V)<br>On-Resistance vs Temperature Reverse Diode Characteristic<br>A)<br>μ<br>  Drain Current (A)<br>ID  Input Current (IIN<br>)<br>Ω<br> On-Resistance (<br>DS(on)   Threshold Voltage (V)<br>R TH<br>V<br>)<br>Ω<br> On-Resistance (<br>  Source Curent (A)<br>DS(on) S<br>R  I<br>**----- End of picture text -----**<br>


IntelliFET[®] is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. ZXMS6006SG 6 of 9 November 2011 Document number: DS35141 Rev. 2 - 2 **www.diodes.com** © Diodes Incorporated 

November 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXMS6006SG** 

## **Typical Characteristics - Continued** 

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**----- Start of picture text -----**<br>
12 12<br>10 RCA V DS Ere I D =1A eee 10 Po VDS ee I D =1A ef<br>8 SoEP| [i Senie 8 mlPTPt ieye TePt tt tT yt yp<br>6 Pt; [Ty | eT yy TT fT Tee TT 6 PT yt | tT tt<br>P| | yy te TT TT Tt rT [| Tet Ty Ty Ty rt ef [[|]<br>4 V IN 4 V IN<br>ee ee<br>2 eeBEREANaeee [ee] 2 P|rTTVTTTTTTy tTey eyft [Ty]<br>0 Ptft | |]NT 0 YTTle| [|<br>-50 0 50 100 150 200 250 300 -50 0 50 100 150 200 250 300<br>Time (μs) Time (μs)<br>Switching Speed Switching Speed<br>Drain-Source Voltage (V) Drain-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Switching Speed** 

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10<br>a ee eee V IN  = 5V<br>8 a ee ee V DS  = 15V<br>ee ee ee RD = 0Ω<br>6 ae AN ee<br>i i ee eee eee<br>4 eeee aeeeeee ee 1|<br>2 ee ee eee |<br>ee a ee |<br>0 ee ee ee ee |<br>0 5 10<br>Time (ms)<br>Typical Short Circuit Protection<br>  Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


IntelliFET[®] is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. ZXMS6006SG 7 of 9 November 2011 Document number: DS35141 Rev. 2 - 2 **www.diodes.com** © Diodes Incorporated 

November 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXMS6006SG** 

## **Package Outline Dimensions** 

|**DIM**<br>~~e~~|**Millimeters**<br>~~**e**e~~<br>~~es~~|**Millimeters**<br>~~**e**e~~<br>~~es~~|**Inches**<br>~~ee~~<br>~~eeeee~~|**Inches**<br>~~ee~~<br>~~eeeee~~|**DIM**<br>~~ee~~|**Millimeters**<br>~~eeee~~<br>~~ee~~|**Millimeters**<br>~~eeee~~<br>~~ee~~|**Inches**|**Inches**|
|---|---|---|---|---|---|---|---|---|---|
||**Min**<br>~~**e**e~~|**Max**<br>~~e~~<br>~~es~~|**Min**<br>~~ee~~<br>~~ee~~|**Max**<br>~~ee~~<br>~~eee~~||**Min**<br>~~ee~~<br>~~ee~~|**Max**<br>~~ee~~|**Min**|**Max**|
|A<br>~~e~~<br>~~a~~<br>~~a~~|-<br>~~**e**e~~<br>~~ss~~<br>~~es~~|1.80<br>~~e ~~<br>~~es ~~<br>~~ssNG~~<br>~~ss~~|-<br> ~~ee~~<br> ~~ee ~~<br>~~NG~~<br>~~ss~~|0.071<br>~~ee~~<br> ~~eee~~<br>~~NG~~<br>~~ss~~|e<br>~~ee~~<br>~~NG~~|2.30 BSC<br>~~ee ee~~<br>~~ee~~<br>~~NG~~||0.0905 BSC<br>~~NG~~||
|A1<br>~~a~~<br>~~a~~|0.02<br>~~es~~<br>~~es~~|0.10<br>~~ss~~<br>~~es~~|0.0008<br>~~ss~~<br>~~se~~|0.004<br>~~ss~~<br>~~se~~|e1|4.60 BSC||0.181 BSC||
|b<br>~~a~~<br>~~a~~|0.66<br>~~es ~~<br>~~es~~|0.84<br> ~~ss~~<br>~~es~~|0.026<br>~~ss~~<br>~~se~~|0.033<br>~~ss~~<br>~~se~~|E|6.70|7.30|0.264|0.287|
|b2<br>~~a~~<br>~~Gs~~<br>~~a~~|2.90<br>~~es~~<br>~~Gs~~|3.10<br>~~es ~~<br>~~Gs~~|0.114<br> ~~se~~<br>~~Gs~~<br>~~GG~~|0.122<br>~~se~~<br>~~Gs~~<br>~~GG~~|E1<br>~~Gs~~<br>~~GG~~|3.30<br>~~Gs~~|3.70<br>~~Gs~~|0.130<br>~~Gs~~|0.146<br>~~Gs~~|
|C<br>~~ee~~<br>~~a~~|0.23<br>~~ee~~<br>~~es es~~|0.33<br>~~ee~~<br>~~es~~|0.009<br>~~ee~~<br>~~GG~~<br>~~sf~~|0.013<br>~~ee~~<br>~~GG~~<br>~~sf~~|L<br>~~ee~~<br>~~GG~~|0.90<br>~~ee~~|-<br>~~ee~~|0.355<br>~~ee~~|-<br>~~ee~~|
|D<br>~~a~~|6.30<br>~~es es~~|6.70<br>~~es~~|0.248<br>~~GG~~<br>~~sf~~|0.264<br>~~GG~~<br>~~sf~~|-<br>~~GG~~|-|-|-|-|



Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches. 

## **Suggested Pad Layout** 

**==> picture [184 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.8<br>0.15<br>2.0 , [=] | [m][i]<br>0.079<br>|<br>=| | i.|<br>|||<br>|| |} o 6.3 —<br>| || 0.248<br>|| |<br>| | |<br>2.0<br>0.079<br>+ _A . ]<br>1.5 mm<br>inches<br>0.059 2.3<br>0.091<br>**----- End of picture text -----**<br>


IntelliFET[®] is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. ZXMS6006SG 8 of 9 November 2011 Document number: DS35141 Rev. 2 - 2 **www.diodes.com** © Diodes Incorporated 

November 2011 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXMS6006SG** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated **www.diodes.com** 

IntelliFET[®] is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. ZXMS6006SG 9 of 9 November 2011 Document number: DS35141 Rev. 2 - 2 **www.diodes.com** © Diodes Incorporated 

November 2011 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/ZXMS6006SGTA/power-mosfet-enhancement-mode-n-channel-60-v-28-a)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/zxms6006sgta/mosfet-n-ch-esd-60v-2-8a-sot223/dp/1902499)
---

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