# Power MOSFET, Enhancement Mode, N Channel, 60 V, 2 A, 0.2 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:1902501RL/)

**URL**: https://novapart.co/products/ZXMS6005SGTA/power-mosfet-enhancement-mode-n-channel-60-v-2-a
**SKU**: ZXMS6005SGTA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3440
**Stock**: 200+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:1V; Pow

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 5V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2A |
| Drain Source On State Resistance | 0.2ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1902501RL/)

## **ZXMS6005SG** & -—— **60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET** 

## **Product Summary** 

- Continuous Drain Source Voltage    VDS = 60V 

- On-State Resistance                            200mΩ 

- Nominal Load Current (VIN = 5V)                2A 

- Clamping Energy                                  480mJ 

## **Features and Benefits** 

- Compact High Power Dissipation Package 

- Low Input Current 

- Logic Level Input (3.3V and 5V) 

- Short Circuit Protection with Auto Restart 

- Over Voltage Protection (Active Clamp) 

## **Description** 

The ZXMS6005SG is a self protected low side IntelliFET[TM] MOSFET with logic level input. It integrates over-temperature; over-current, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6005SG is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. 

- Thermal Shutdown with Auto Restart 

- Over-Current Protection 

- Input Protection (ESD) 

- High Continuous Current Rating 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **An Automotive-Compliant Part is Available Under Separate Datasheet (ZXMS6005SGQ)** 

## **Applications** 

- Especially Suited for Loads with a High In-rush Current such as Lamps and Motors 

- All Types of Resistive, Inductive and Capacitive Loads in Switching Applications 

- μC Compatible Power Switch for 12V DC Applications 

- Automotive Rated 

## **Mechanical Data** 

   - Case: SOT223 (Type DN) 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Matte Tin Finish © **e3** 

   - Weight: 0.112 grams (Approximate) 

- Replaces Electromechanical Relays and Discrete Circuits 

- Linear Mode capability - the current-limiting protection circuitry is designed to de-activate at low VDS to minimize on state power dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product’s ability to self- protect at low VDS. 

SOT223 (Type DN) 

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Top View<br>Top View  Pin Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|---|---|
||||||
|**Part Number**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity Per Reel**|
|ZXMS6005SGTA|ZXMS6005S|7|12|1,000 Units|



Notes: 

1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

ZXMS6005S = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 8 = 2018) WW or WW = Week Code (01 to 53) 

_IntelliFET is a trademark of Diodes Incorporated._ 

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**ZXMS6005SG** [ 

## **Functional Block Diagram** 

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dV/dt<br>Limitation<br>oe<br>**----- End of picture text -----**<br>


**Absolute Maximum Ratings** (@TA = +25°C, unless otherwise stated.) 

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||||||||
|---|---|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Continuous Drain-Source Voltage|VDS|60|V|
|Drain-Source Voltage for Short Circuit Protection|VDS(SC)|24|V|
|Continuous Input Voltage|VIN|-0.5 to +6|V|
|Continuous Input Current @-0.2V ≤ VIN ≤ 6V|No limit|
|Continuous Input Current @VIN < -0.2V or VIN > 6V|IIN|│|IIN|│|≤2|mA|
|Pulsed Drain Current @VIN = 3.3V|IDM|5|A|
|Pulsed Drain Current @VIN = 5V|IDM|6|A|
|Continuous Source Current (Body Diode) (Note 5)|IS|2.5|A|
|Pulsed Source Current (Body Diode)|ISM|10|A|
|Unclamped Single Pulse Inductive Energy,|
|TJ = +25°C, ID = 0.5A, VDD = 24V|EAS|480|mJ|
|Electrostatic Discharge (Human Body Model)|VESD|4000|V|
|Charged Device Model|VCDM|1000|V|

**----- End of picture text -----**<br>


## **Thermal Characteristics** (@TA = +25°C, unless otherwise stated.) 

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|||||
|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Power Dissipation at TA = +25°C (Note 5)|1.0|W|
|Linear Derating Factor|PD|8.0|mW/°C|
|Power Dissipation at TA = +25°C (Note 6)|1.6|W|
|Linear Derating Factor|PD|12.8|mW/°C|
|Thermal Resistance, Junction to Ambient (Note 5)|RθJA|125|°C/W|
|Thermal Resistance, Junction to Ambient (Note 6)|RθJA|83|°C/W|
|Thermal Resistance, Junction to Case (Note 7)|RθJC|39|°C/W|
|Operating Temperature Range|TJ|-40 to +150|°C|
|Storage Temperature Range|TSTG|-55 to +150|°C|

**----- End of picture text -----**<br>


Notes: 5. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR-4 board, in still air conditions. Sink split drain 80% and source 20% to isolate connections. 

6. For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR-4 board, in still air conditions. Sink split drain 80% and source 20% to isolate connections. 

7. Thermal resistance between junction and the mounting surfaces of drain and source pins. 

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**ZXMS6005SG** 

## **Recommended Operating Conditions** 

The ZXMS6005SG is optimized for use with μC operating from 3.3V and 5V supplies. 

|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|---|---|---|---|---|
|Input Voltage Range|VIN|0|5.5|V|
|Ambient Temperature Range|TA|-40|+125|°C|
|High Level Input Voltage for MOSFET to be on|VIH|3|5.5|V|
|Low Level Input Voltage for MOSFET to be off|VIL|0|0.7|V|
|Peripheral SupplyVoltage(voltage to which load is referred)|VP|0|24|V|



## **Thermal Characteristics** 

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Single Pulse<br>TA = 25°C<br>See Note 5<br>**----- End of picture text -----**<br>


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See Note 6<br>See Note 5<br>**----- End of picture text -----**<br>


## **Safe Operating Area                                                   Derating Curve** 

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TA = 25°C<br>See Note 5<br>**----- End of picture text -----**<br>


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Single Pulse<br>TA = 25°C<br>See Note 5<br>**----- End of picture text -----**<br>


## **Transient Thermal Impedance                                    Pulse Power Dissipation** 

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**ZXMS6005SG** 

## **Electrical Characteristics** (@TA = +25°C, unless otherwise stated.) 

|**Characteristic**<br>~~RD~~<br>~~————~~|**Symbol**<br>~~RD~~<br>~~DO~~<br>~~———~~|**Min**<br>~~RD~~<br>~~DO~~<br>~~———~~|**Typ**<br>~~RD~~<br>~~(~~<br>~~———~~|**Max**<br>~~RD~~<br>~~(~~<br>~~———~~|**Unit**<br>~~RD~~<br>~~(~~<br>~~———~~|**Test Condition**<br>~~RD~~<br>~~(~~<br>~~———~~|
|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~DO~~<br>~~( (~~<br>~~————~~|||||||
|Drain-Source ClampVoltage<br>~~————~~|VDS(AZ)<br>~~———~~|60<br>~~———~~<br>~~_ E~~|65<br>~~———~~<br>~~E~~<br>~~E~~|70<br>~~———~~<br>~~E~~|V<br>~~———~~|ID= 10mA<br>~~———~~|
|Off State Drain Current<br>~~————~~<br>~~i~~|IDSS<br>~~———~~<br>~~i~~<br>~~Gs~~|—<br>~~———~~<br>~~i~~<br>~~_ E~~|—<br>~~———~~<br>~~i~~<br>~~E~~<br>~~E~~|1<br>~~———~~<br>~~i~~<br>~~E~~|μA<br>~~———~~<br>~~i~~<br>~~(~~|VDS= 12V, VIN= 0V<br>~~———~~<br>~~i~~|
|||—<br>~~i~~<br>~~_ E~~<br>~~Gs~~|—<br>~~i~~<br>~~E~~<br>~~E~~<br>~~SD~~|2<br>~~i~~<br>~~E~~<br>~~(~~||VDS= 36V, VIN= 0V<br>~~i~~<br>~~(~~|
|Input Threshold Voltage<br>~~rs~~|VIN(TH)<br>~~rs~~<br>~~Gs~~<br>~~es~~|0.7<br>~~_ E~~<br>~~rs~~<br>~~Gs~~<br>~~es~~|1.2<br>~~E~~<br>~~E~~<br>~~rs~~<br>~~SD~~|1.5<br>~~E~~<br>~~rs~~<br>~~(~~|V<br>~~rs~~<br>~~(~~<br>~~ee~~|VDS= VGS, ID= 1mA<br>~~rs~~<br>~~(~~<br>~~ee~~|
|Input Current<br>~~es~~|IIN<br>~~Gs~~<br>~~es~~<br>~~es~~<br>~~Gs~~|—<br>~~Gs~~<br>~~es~~<br>~~es~~|60<br>~~SD~~<br>~~es~~|100<br>~~(~~<br>~~es~~|μA<br>~~( ~~<br>~~es~~<br>~~ee~~<br>~~(~~|VIN= 3V<br> ~~(~~<br>~~es~~<br>~~ee~~|
|||—<br>~~es~~<br>~~es~~<br>~~Gs~~|120<br>~~es~~<br>~~SD~~|200<br>~~es~~<br>~~(~~||VIN= 5V<br>~~es~~<br>~~ee~~<br>~~(~~|
|Input Current While Over Temperature Active<br>~~rs~~|—<br>~~es~~<br>~~rs~~<br>~~Gs~~<br>~~en~~|—<br>~~es~~<br>~~rs~~<br>~~Gs~~<br>~~en~~|—<br>~~rs~~<br>~~SD~~|300<br>~~rs~~<br>~~(~~|μA<br>~~ee~~<br>~~rs~~<br>~~(~~<br>~~ee~~|VIN = 5V<br>~~ee~~<br>~~rs~~<br>~~(~~<br>~~ee~~|
|Static Drain-Source On-State Resistance<br>~~es~~|RDS(ON)<br>~~Gs~~<br>~~es~~<br>~~en~~|—<br>~~Gs~~<br>~~es~~<br>~~en~~|170<br>~~SD~~<br>~~es~~|250<br>~~(~~<br>~~es~~|mΩ<br>~~( ~~<br>~~es~~<br>~~ee~~|VIN= 3V, ID= 1A<br> ~~(~~<br>~~es~~<br>~~ee~~|
|||—<br>~~es~~<br>~~en~~|150<br>~~es~~|200<br>~~es~~||VIN= 5V, ID= 1A<br>~~es~~<br>~~ee~~|
|Continuous Drain Current (Note 5)<br>~~Be~~|ID<br>~~en~~<br>~~ee~~|1.4<br>~~en~~|—|—|A<br>~~ee~~<br>~~**PO**~~<br>~~ee~~|VIN = 3V, TA= +25°C<br>~~ee~~|
|||1.6<br>~~**ee**~~|—<br>~~**ee**~~|—||VIN= 5V, TA= +25°C<br>~~**PO**~~|
|Continuous Drain Current (Note 6)<br>~~Be~~||1.9<br>~~**ee**~~|—<br>~~**ee**~~|—||VIN = 3V, TA= +25°C<br>~~**PO**~~|
|||2.0<br>~~**ee**~~<br>~~ee~~|—<br>~~**ee**~~|—||VIN= 5V, TA= +25°C<br>~~**PO**~~<br>~~ee~~|
|Current Limit (Note 8)<br>~~Be~~<br>~~es~~|ID(LIM)<br>~~es~~<br>~~ee~~|2.2<br>~~**ee** ~~<br>~~es~~<br>~~ee~~|5<br> ~~**ee**~~<br>~~es~~|—<br>~~es~~|A<br>~~**PO**~~<br>~~es~~<br>~~ee~~|VIN= 3V<br>~~**PO**~~<br>~~es~~<br>~~ee~~|
|||3.3<br>~~es~~<br>~~ee~~|7<br>~~es~~|—<br>~~es~~||VIN= 5V<br>~~es~~<br>~~ee~~|
|**Dynamic Characteristics**<br>~~ee~~<br>~~ee~~<br>~~ee~~|||||||
|Turn On DelayTime<br>~~rs~~|tD(ON)<br>~~rs~~<br>~~ee~~|—<br>~~rs~~|6<br>~~rs~~|—<br>~~rs~~|μs|VDD= 12V, ID= 1A, VGS= 5V|
|Rise Time|tR<br>~~ee~~<br>~~es~~|—<br>~~es~~|14|—|||
|Turn Off DelayTime<br>~~es~~|tD(OFF)<br>~~es~~<br>~~es~~<br>~~rs~~|—<br>~~es~~<br>~~es~~|34<br>~~es~~|—<br>~~es~~|||
|Fall Time<br>~~Ps~~|tF<br>~~es~~<br>~~Ps~~<br>~~rs~~|—<br>~~es~~<br>~~Ps~~|19<br>~~Ps~~|—<br>~~Ps~~|||
|**Over-Temperature Protection**<br>~~rs~~|||||||
|Thermal Overload TripTemperature (Note 9)<br>~~ff~~|TJT<br>~~ff~~|+150<br>~~ff~~|+175<br>~~ff~~|—<br>~~ff~~|°C<br>~~ff~~|—<br>~~ff~~|
|Thermal Hysteresis(Note 9)<br>~~ff~~|—<br>~~ff~~|—<br>~~ff~~|+10<br>~~ff~~|—<br>~~ff~~|°C<br>~~ff~~|—<br>~~ff~~|



Notes:      8. The drain current is restricted only when the device is in saturation (see graph ‘Typical Output Characteristic’). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. 

9. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal operating range, so this part is not designed to withstand over-temperature for extended periods. 

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**ZXMS6005SG** 

## **Typical Characteristics** 

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9<br>8 TLPees 5V A 4.5V = T AT = 25 A = 25 °C  °C 120 ee,A<br>7 oe 4V 100 es<br>6 ioFoGe _4GEEEREee SSS 3.5V SSS| 80 eeee<br>5 oo 3V ee ee<br>4 2.5V 60<br>pce,2/4000ee poee ae<br>321 —————|| #20Aoeee eee 2V TT VIN 4 4020 PoYPeee| || dT| CUTWeyYA eee| | fy<br>1.5V<br>0 pSvTILITTT TTT eerT 0 aeS ae<br>0 1 2 3 4 5 6 7 8 9 10 11 12 0 1 2 3 4 5<br>VDS  Drain-Source Voltage (V) VIN Input Voltage (V)<br>Typical Output CharacteristicTypical Output Characteristic                    Input Current vs Input Voltage Input Current vs Input Voltage<br>1.4<br>ee<br>ID = 1A 1.3 ee eee V IN  = V DS<br>0.4 1.2 Poeee I D  = 1mA<br>ee<br>1.1 ee<br>0.2 T T J= 150J  = 150° C  °C (a<br>1.0 ee ee ee<br>PN<br>0.9 ee<br>0.0 TTJJ = 25°C= 25°C  0.8 aa<br>2.0 2.5 3.0 3.5 4.0 4.5 5.0 -75 -50 -25 0 25 50 75 100 125 150<br>VIN  Input Voltage (V) TJ  Junction Temperature (°C)(°C)<br>On-Resistance vs Input VoltageOn-Re istance vs Input Voltage               Threshold Voltage vs Temperature Threshold Voltage vs Temperature<br>0.40 10<br>0.35<br>0.30 TT J J == 15 00°°C C<br>0.25 | [|] VIN = 3V aesA 1 po p Ay<br>0.20 | [|] weal f f F<br>0.15 aA ey Ae 2 T J =25°C TJ = 25°C  I<br>0.1<br>0.10 ee V IN  = 5V ee ee eece<br>0.05 a2 == === ===<br>| Tt ft | =<br>0.00 Pt tT Te | tT Te 0.01 i A<br>-75 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2<br>TJ  Junction Temperature  (°C  ) )  VSD  Source-Drain Voltage (V)<br>On-Resistance vs TemperatureOn-Resistance vs Temperature                    Reverse Diode Characteristic Reverse Diode Characteristic<br>A)<br><br>  Drain Current (A)<br>ID  Input Current (IIN<br>)<br><br> On-Resistance (<br>DS(on)   Threshold Voltage (V)<br>R TH<br>V<br>)<br><br> On-Resistance (<br>  Source Curent (A)<br>DS(on) S<br>R  I<br>**----- End of picture text -----**<br>


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**ZXMS6005SG** 

## **Typical Characteristics** (Cont.) 

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12 12<br>10 |tHe| TU V DS | | I D =1A EHFnin 10 mimioe VDS | | | | I D =1A | |it<br>8 |So| {yi Seee ie 8 mimirt itt tTeete tT the eeetT tT ht hE<br>nm ei a eee<br>6 P| ty Tt yt tt ye 6 aeee<br>rt tT ttt Tt tt ey tq Tt rT<br>4 V IN 4 V IN<br>;ee | Py eePt iyee eeeH+PYee{| ft<br>2 rTTINTTt tT TT [ie] TT 2 rt yy tT tT | te tT ye et [tT]<br>ER ReNE eee eee Ptty Tt tT | tT tT fT TAT Tf<br>0 0<br>-50 0 50 100 150 200 250 300 -50 0 50 100 150 200 250 300<br>Time (s) Time (s)<br>Switching Speed Switching Speed<br>Drain-Source Voltage (V) Drain-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Switching Speed** 

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8 V IN  = 5V<br>PT LT Ty yy V DS  = 15V<br>6 RD = 0<br>PT NET<br>P][NEETTT<br>4 PT ETT<br>PT yey| | PeeEE TE Ee a<br>2 SERRE<br>SERRE<br>0 SERREi<br>-2 0 2 4 6 8 10 12<br>Time (ms)<br>Typical Short Circuit ProtectionTypical Short Circuit Protection<br>  Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT223 (Type DN)** 

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**----- Start of picture text -----**<br>
D<br>b2<br>C<br>Es) F<br>. E1 E<br>Gauge<br>Plane<br>0.25<br>Seating L<br>Plane<br>e b<br>i e1 oe<br>A A1<br>A2<br>——!<br>**----- End of picture text -----**<br>


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SOT223 (Type DN)<br>Dim  Min  Max  Typ<br>A --  1.70 --<br>A1 0.01  0.15 --<br>===<br>A2 1.50  1.68  1.60<br>b 0.60  0.80  0.70<br>b2 2.90  3.10  --<br>c 0.20  0.32  --<br>D 6.30  6.70  --<br>E 6.70  7.30  --<br>E1 3.30  3.70  --<br>e --  --  2.30<br>e1 --  --  4.60<br>L 0.85 --  --<br>=== All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT223 (Type DN)** 

X1 Y1 ~~aan~~ C1 Y2 Y ~~poo~~ X C 

|**Dimensions V**|**Value (in mm)**|
|---|---|
|**C**|2.30|
|**C1**|6.40|
|**X**|1.20|
|**X1**|3.30|
|**Y**|1.60|
|**Y1**|1.60|
|**Y2**|8.00|



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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

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Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2018, Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

ZXMS6005SG Document number: DS32249  Rev. 2 - 2 

July 2018 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/ZXMS6005SGTA/power-mosfet-enhancement-mode-n-channel-60-v-2-a)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/zxms6005sgta/mosfet-n-ch-w-esd-60v-2a-sot223/dp/1902501RL)
---

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