# Power MOSFET, N Channel, 60 V, 2 A, 0.15 ohm, SOIC, Surface Mount
**URL**: https://novapart.co/products/ZXMS6005N8-13/power-mosfet-n-channel-60-v-2-a-015-ohm-soic
**SKU**: ZXMS6005N8-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2890
**Stock**: 1000+
**Lead Time**: 106 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.65W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 5V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2A |
| Drain Source On State Resistance | 0.15ohm |
| Gate Source Threshold Voltage Max | 1V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3944010/)
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**ZXMS6005N8 60V N-CHANNEL SELF-PROTECTED ENHANCEMENT MODE IntelliFET MOSFET**
## **Product Summary**
- Continuous Drain Source Voltage: 60V
- On-State Resistance: 200mΩ
- Nominal Load Current (VIN = 5V): 2.0A
- Clamping Energy: 120mJ
## **Features and Benefits**
- Low Input Current
- Logic Level Input (3.3V and 5V)
- Short Circuit Protection with Auto Restart
- Overvoltage Protection (Active Clamp)
- Thermal Shutdown with Auto Restart
- Overcurrent Protection
## **Description**
The ZXMS6005N8 is a self-protected low side IntelliFET[TM] MOSFET with logic level input. It integrates over-temperature, overcurrent, overvoltage (active clamp) and ESD protected logic level functionality. The ZXMS6005N8 is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.
- Input Protection (ESD)
- High Continuous Current Rating
- **Totally Lead-Free & Fully RoHS Compliant (Notes 1& 2)**
- **Halogen and Antimony Free. “Green” Device (Note 3)**
- **An Automotive-Compliant Part is Available Under Separate Datasheet (ZXMS6005N8Q)**
## **Applications**
## **Mechanical Data**
- Especially Suited for Loads with a High In-Rush Current such as Lamps and Motors
- Case: SO-8
- Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0
- All Types of Resistive, Inductive and Capacitive Loads in Switching Applications
- Moisture Sensitivity: Level 1 per J-STD-020
- μC Compatible Power Switch for 12V and 24V DC Applications
- Terminals: Matte Tin Finish
- Replaces Electromechanical Relays and Discrete Circuits
- Weight: 80.2mg (Approximate)
- Linear Mode Capability– the current-limiting protection circuitry is designed to deactivate at low VDS to minimize on-state power dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product’s ability to self-protect at low VDS.
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SO-8 D
S D
S [|] D
IN
S D
ON ; i
S
IN D
Top View Device Symbol
Top View
Pin Out
g Information Information (Note 4)
Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
ZXMS6005N8-13 6005N8 13 12 2,500 Units
**----- End of picture text -----**
## **Ordering Information Information** (Note 4)
- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
## **Marking Information**
## oH = Manufacturer’s Marking
6005N8 = Product Type Marking Code YYWW = Date Code Marking YY: Year WW: Week: 01~52; 52 represents 52 and 53 week
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Top View
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_IntelliFET is a trademark of Diodes Incorporated._
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ZXMS6005N8 Document number: DS38473 Rev. 3 - 2
June 2017 © Diodes Incorporated
**ZXMS6005N8** [
## **Functional Block Diagram**
## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise stated.)
|**Absolute Maximum Ratingsgss **(@TA = +25°C, unless otherwise stated.)A = +25°C, unless otherwise stated.)= +25°C, unless otherwise stated.)|**Absolute Maximum Ratingsgss **(@TA = +25°C, unless otherwise stated.)A = +25°C, unless otherwise stated.)= +25°C, unless otherwise stated.)|**Absolute Maximum Ratingsgss **(@TA = +25°C, unless otherwise stated.)A = +25°C, unless otherwise stated.)= +25°C, unless otherwise stated.)|**Absolute Maximum Ratingsgss **(@TA = +25°C, unless otherwise stated.)A = +25°C, unless otherwise stated.)= +25°C, unless otherwise stated.)|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Continuous Drain-Source Voltage|VDS|60|V|
|Drain-Source Voltage for Short Circuit Protection|VDS(SC)|24|V|
|Continuous Input Voltage|VIN|-0.5 to +6|V|
|Continuous Input Current @-0.2V ≤ VIN≤ 6V
Continuous Input Current@VIN< -0.2V or VIN> 6V|IIN|No Limit
│IIN│≤ 2|mA|
|Pulsed Drain Current @VIN= 3.3V|IDM|5|A|
|Pulsed Drain Current @VIN= 5V|IDM|6|A|
|Continuous Source Current (Body Diode) (Note 5)|IS|2.5|A|
|Pulsed Source Current (Body Diode)|ISM|10|A|
|Unclamped Single Pulse Inductive Energy,
TJ= +25°C,ID= 0.5A,VDD= 24V|EAS|120|mJ|
|Electrostatic Discharge (Human Body Model)|VHBM|4,000|V|
|Charged Device Model|VCDM|1,000|V|
## **Recommended Operating Conditions**
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|---|---|---|---|---|
|Input Voltage Range|VIN|0|5.5|V|
|Ambient Temperature Range|TA|-40|+125|°C|
|High Level Input Voltage for MOSFET to be On|VIH|3|5.5|V|
|Low Level Input Voltage for MOSFET to be Off|VIL|0|0.7|V|
|Peripheral Supply Voltage (Voltage to which Load is Referred)|VP|0|24|V|
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ZXMS6005N8 Document number: DS38473 Rev. 3 - 2
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**ZXMS6005N8**
**Thermal Resistance** (@TA = +25°C, unless otherwise specified.)
|||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation @TA= +25°C (Note 5)
Linear DeratingFactor|PD|1.28
10|W
mW/°C|
|Power Dissipation @TA= +25°C (Note 6)
Linear DeratingFactor|PD|1.65
12.4|W
mW/°C|
|Thermal Resistance, Junction to Ambient (Note 5)|RθJA|98|°C/W|
|Thermal Resistance, Junction to Ambient (Note 6)|RθJA|76|°C/W|
|Thermal Resistance, Junction to Case (Note 7)|RθJC|12|°C/W|
|Operating Temperature Range|TJ|-40 to +150|°C|
|Storage Temperature Range|TSTG|-55 to +150|°C|
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Thermal resistance between junction and the mounting surfaces of drain and source pins.
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Single Pulse NE
TA = 25°C
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PD (Note 6)
PD (Note 5)
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**ZXMS6005N8**
**Electrical Characteristics** (@TA = +25°C, unless otherwise stated.)
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|||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|rs|Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition|
|Static Characteristics|
|Drain-Source Clamp Voltage|VDS(AZ)|60|65|70|V|ID = 10mA|
|—|—|1|VDS = 12V,|VIN = 0V|
|——|Off-State Drain Current|IDSS|rs|rs(|μA|(|
|—|—|2|VDS = 36V,|VIN = 0V|
|a|Ee|OE|
|Input Threshold Voltage|VIN(TH)|0.7|1|1.5|V|VDS = VGS,|ID = 1mA|
|—|60|100|VIN = 3V|
|Input Current|IIN|μA|
|a|EO|—|120|200|VIN = 5V|
|es|Input Current while Overtemperature Active|I|—|IID|—|nD|—|300|I|(OO|μA|(OO|VIN = 5V|
|—|170|250|VIN = 3V,|ID = 1.0A|
|O_O|Static Drain-Source On-State Resistance|RDS(ON)|—|150|200|mΩ|VIN = 5V,|ID = 1.0A|
|1.4|—|—|VIN = 3V,|TA = +25°C|
|Continuous Drain Current (Note 5)|
|1.6|—|—|VIN = 5V,|TA = +25°C|
|ID|A|
|1.9|—|—|VIN = 3V,|TA = +25°C|
|Continuous Drain Current (Note 6)|
|2.0|—|—|VIN = 5V,|TA = +25°C|
|BY|a|ee|PO|
|o_O|Current Limit (Note 8)|ID(LIM)|Ce|2.2 3.3|5 7|— —|A|VVIN IN = 3V= 5V|
|Dynamic Characteristics|
|es|Turn-On Delay Time|tD(|es|ON)|—|5|—|
|Rise Time|tR|—|14|—|
|μs|VDD = 12V, ID = 0.5A, VGS = 5V|
|rs|Turn-Off Delay Time|es|tD(OFF)|Ge|—|34|—|
|es|Fall Time|eres|tF|ee|—|19|—|
|Overtemperature Protection|
|Ds|Thermal Overload Trip Temperature (Note 9)|TJT|+150|+175|I|I|—|(|°C|—|
|Se|Thermal Hysteresis (Note 9)|∆TJT|—|+10|—|°C|—|
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Notes: 8. The drain current is restricted only when the device is in saturation (see Typical Output Characteristic graph). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary.
9. Overtemperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as ―outside‖ normal operating range, so this part is not designed to withstand overtemperature for extended periods.
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ZXMS6005N8 Document number: DS38473 Rev. 3 - 2
June 2017 © Diodes Incorporated
**ZXMS6005N8**
## **Typical Characteristics**
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0.20 | | ee
a
018= ee of
0.10 — Vin = OV
os | TF | | | |
0.
oohgL
, Source Current (A)
IS
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**ZXMS6005N8**
## **Typical Characteristics** (Cont.)
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**ZXMS6005N8**
## **Package Outline Dimensions**
Please see http://www.diodes.com/package-outlines.html for the latest version.
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SO-8
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SO-8
Dim Min Max Typ
A 1.40 1.50 1.45
E == A1 0.10 0.20 0.15
b 0.30 0.50 0.40
c 0.15 0.25 0.20
1
D 4.85 4.95 4.90
E 5.90 6.10 6.00
E1 3.80 3.90 3.85
E0 3.85 3.95 3.90
b
E1 e -- -- 1.27
h h - -- 0.35
Q L 0.62 0.82 0.72
7° Q 0.60 0.70 0.65
c All Dimensions in mm
A 4°± 3°
G auge Plane
S eating Plane
L
e A1 E0
D
9° (All sides)
R 0.1
45°
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## **Suggested Pad Layout**
Please see http://www.diodes.com/package-outlines.html for the latest version.
**SO-8**
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X1
Y1
ee
Y
OO C X
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|**Dimensions Value**|**Dimensions Value(in mm)**|
|---|---|
|**C**|1.27|
|**X**|0.802|
|**X1**|4.612|
|**Y**|1.505|
|**Y1**|6.50|
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ZXMS6005N8 Document number: DS38473 Rev. 3 - 2
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**ZXMS6005N8**
## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
- A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
**www.diodes.com**
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ZXMS6005N8 Document number: DS38473 Rev. 3 - 2
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---
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