# Power MOSFET, N Channel, 60 V, 2 A, 0.2 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:3944009/)

**URL**: https://novapart.co/products/ZXMS6005DGQ-13/power-mosfet-n-channel-60-v-2-a-02-ohm-sot-223
**SKU**: ZXMS6005DGQ-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3090
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.69W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 5V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2A |
| Drain Source On State Resistance | 0.2ohm |
| Gate Source Threshold Voltage Max | 1.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3944009/)

## **ZXMS6005DGQ-13 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET** 

## **Product Summary** 

- Continuous Drain Source Voltage          60V 

- On-state Resistance                          200mΩ 

- Nominal Load Current (VIN = 5V)           2.0A 

- Clamping Energy                                490mJ 

## **Features and Benefits** 

- Compact High Power Dissipation Package 

- Low Input Current 

- Logic Level Input (3.3V and 5V) 

- Short Circuit Protection with Auto Restart 

- Over Voltage Protection (Active Clamp) 

## **Description** 

The ZXMS6005DGQ-13 is a self protected low side IntelliFET[TM] MOSFET with logic level input. It integrates over-temperature, overcurrent, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6005DGQ-13 is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. 

- Thermal Shutdown with Auto Restart 

- Over-current Protection 

- Input Protection (ESD) 

- High Continuous Current Rating 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Applications** 

- Lamp Driver 

- Motor Driver 

- Relay Driver 

- Solenoid Driver 

## **Mechanical Data** 

- Case: SOT223 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Matte Tin Finish **e3** 

- Weight: 0.12 grams (Approximate) 

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SOT223 (Type DN)<br>Top View<br>**----- End of picture text -----**<br>


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D<br>S<br>D D<br>IN<br>IN<br>S<br>Top View<br>Device Symbol<br>Pin Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 5) 

|**Part Number**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity Per Reel**|
|---|---|---|---|---|
|ZXMS6005DGQ-13|ZXMS6005D|13|12|2,500 Units|



- Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable. Please refer to https://www.diodes.com/quality/. 

   5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

ZXMS6005D = Product Type Marking Code YWW = Date Code Marking Y or Y = ~~|~~ Last Digit of Year (ex: 8 = 2018) WW or WW = Week Code (01 to 53) 

_IntelliFET is a trademark of Diodes Incorporated._ 

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## **Functional Block Diagram** 

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[dV/dt ]<br>Limitation<br>oe<br>**----- End of picture text -----**<br>


## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Continuous Drain-Source Voltage|VDS|60|V|
|Drain-Source Voltage for Short Circuit Protection|VDS(SC)|24|V|
|Continuous Input Voltage|VIN|-0.5 to +6|V|
|Continuous Input Current @-0.2V ≤ VIN≤ 6V<br>Continuous Input Current@VIN< -0.2V or VIN> 6V|IIN|No limit<br>│IIN │≤2|mA|
|Pulsed Drain Current@VIN= 3.3V|IDM|5|A|
|Pulsed Drain Current@VIN= 5V|IDM|6|A|
|Continuous Source Current(BodyDiode) (Note 6)|IS|2.5|A|
|Pulsed Source Current(BodyDiode)|ISM|10|A|
|Unclamped Single Pulse Inductive Energy,<br>TJ= +25°C,ID= 0.5A,VDD= 24V|EAS|490|mJ|
|Electrostatic Discharge(Human BodyModel)|VESD|4000|V|
|Charged Device Model|VCDM|1000|V|



**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation at TA= +25°C (Note 6)<br>Linear DeratingFactor|PD|1.32<br>10.5|W<br>mW/°C|
|Power Dissipation at TA= +25°C (Note 7)<br>Linear DeratingFactor|PD|1.69<br>13.5|W<br>mW/°C|
|Thermal Resistance, Junction to Ambient(Note 6)|RθJA|94.8|°C/W|
|Thermal Resistance, Junction to Ambient(Note 7)|RθJA|74|°C/W|
|Thermal Resistance, Junction to Case(Note 8)|RθJC|9.3|°C/W|
|OperatingTemperature Range|TJ|-40 to +150|°C|
|Storage Temperature Range|TSTG|-55 to +150|°C|



Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 

7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

8. Thermal resistance between junction and the mounting surfaces of drain and source pins. 

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## **Recommended Operating Conditions** 

The ZXMS6005DGQ-13 is optimized for use with μC operating from 3.3V and 5V supplies. 

|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|---|---|---|---|---|
|Input Voltage Range|VIN|0|5.5|V|
|Ambient Temperature Range|TA|-40|+125|°C|
|High Level Input Voltage for MOSFET to be on|VIH|3|5.5|V|
|Low Level Input Voltage for MOSFET to be off|VIL|0|0.7|V|
|Peripheral SupplyVoltage(voltage to which load is referred)|VP|0|24|V|



## **Thermal Characteristics** 

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TA = 25°C<br>See Note 6<br>**----- End of picture text -----**<br>


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Single Pulse<br>TA = 25°C<br>See Note 6<br>**----- End of picture text -----**<br>


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## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**Static Characteristics**|||||||
|Drain-Source ClampVoltage|VDS(AZ)|60|65|70|V|ID= 10mA|
|Off State Drain Current|IDSS|—|—|1|μA|VDS= 12V,VIN= 0V|
|||—|—|2||VDS= 36V,VIN= 0V|
|Input Threshold Voltage<br>~~i~~|VIN(TH)|0.7|1.2<br>~~—— —~~|1.5<br>~~—~~|V<br>~~—~~|VDS= VGS,ID= 1mA|
|Input Current<br>~~i~~|IIN|—|60<br>~~—— —~~|100<br>~~—~~|μA<br>~~—~~|VIN= 3V|
|||—|120<br>~~—— —~~|200<br>~~—~~||VIN= 5V|
|Input Current While Over Temperature Active<br>~~i~~|—|—|—<br>~~—— —~~|300<br>~~—~~|μA<br>~~—~~|VIN= 5V|
|Static Drain-Source On-State Resistance<br>~~i~~|RDS(ON)|—|170<br>~~—— —~~|250<br>~~—~~|mΩ<br>~~—~~|VIN= 3V,ID= 1A|
|||—|150<br>~~—— —~~|200<br>~~—~~||VIN= 5V,ID= 1A|
|Continuous Drain Current (Note 6)<br>~~i~~<br>~~Po~~|ID|1.4|—<br>~~—— —~~|—<br>~~—~~|A<br>~~—~~<br>~~Pr~~|VIN= 3V,TA= +25°C|
|||1.6<br>~~ee~~|—<br>~~ee~~|—||VIN= 5V,TA= +25°C<br>~~Pr~~|
|Continuous Drain Current (Note 7)<br>~~Po~~||1.9<br>~~ee~~<br>~~ES~~|—<br>~~ee~~<br>~~ES~~|—<br>~~ES~~||VIN= 3V,TA= +25°C<br>~~Pr~~|
|||2.0<br>~~ee~~<br>~~ES~~|—<br>~~ee~~<br>~~ES~~|—<br>~~ES~~||VIN= 5V,TA= +25°C<br>~~Pr~~|
|Current Limit (Note 9)<br>~~Po~~<br>~~pF~~|ID(LIM)<br>~~pF~~|2.2<br>~~ee~~<br>~~pF~~<br>~~ES~~|5<br>~~ee~~<br>~~pF~~<br>~~ES~~|—<br>~~pF~~<br>~~ES~~|A<br>~~Pr~~<br>~~pF~~|VIN= 3V<br>~~Pr~~<br>~~pF~~|
|||3.3<br>~~pF~~<br>~~ES~~|7<br>~~pF~~<br>~~ES~~|—<br>~~pF~~<br>~~ES~~||VIN= 5V<br>~~pF~~|
|**Dynamic Characteristics**<br>~~ES~~<br>~~Ce~~<br>~~ee~~|||||||
|Turn On DelayTime<br>~~Ce~~|tD(ON)|—|6<br>~~ee~~|—<br>~~ee~~|μs|VDD= 12V, ID= 1A, VGS= 5V|
|Rise Time<br>~~Ce~~|tR|—|14<br>~~ee~~|—<br>~~ee~~|||
|Turn Off DelayTime|tD(OFF)|—|34|—|||
|Fall Time|tF|—|19|—|||
|**Over-Temperature Protection**<br>~~ee~~|||||||
|Thermal Overload TripTemperature(Note 10)<br>~~ee~~|TJT<br>~~ee~~|+150<br>~~ee~~|+175<br>~~ee~~|—<br>~~ee~~|°C<br>~~ee~~|—<br>~~ee~~|
|Thermal Hysteresis(Note 10)<br>~~ee~~|ff<br>~~ee~~|—<br>~~ee~~|+10<br>~~ee~~|—<br>~~ee~~|°C<br>~~ee~~|—<br>~~ee~~|



10. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal operating range, so this part is not designed to withstand over-temperature for extended periods. 

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## **Typical Characteristics** 

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ID = 1A  ee VIN = VDS<br>1.3 ID = 1mA<br>hs<br>© a ee<br>o a<br>@ 412<br>Oo= Fe eeaeee<br>TJ = 150C 2 if | | | | | TN<br>® a ee<br>TJ = 25C “= aa po} |<br>**----- End of picture text -----**<br>


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® oss pf pf _ ~ TJ = 150C ~a<br>CcoO 030 | | V | IN = 3V || at 4—ze eaeL<br>en oe Nee |g RS<br>TJ = 25C —<br>él ees — [-A]<br>Ogio)idet  eeeetele VIN = 5V rr)3 SSSoe 2 eee==<br>**----- End of picture text -----**<br>


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**Typical Characteristics** (Cont.) 

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12 12<br>10 aPTOe V DS I D =1A ni 10 a VDS I D =1A Cir<br>| Po Ferre<br>8 | 8 |<br>PAE A<br>6 Py 6 A<br>a a<br>4 V IN 4 V IN<br>oea Cee COPSOs<br>2 A) 2 Os<br>a i<br>0 es ee 0 i ee<br>-50 0 50 100 150 200 250 300 -50 0 50 100 150 200 250 300<br>Time (s) Time (s)<br>Switching Speed Switching Speed<br>Drain-Source Voltage (V) Drain-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Switching Speed** 

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8 V IN  = 5V<br>Ge Gee V DS  = 15V<br>6 RD = 0<br>PIT NET TTT tt tt<br>Pi][NEE<br>4 Pt TE TT<br>Ge ERR| Pree eee<br>2<br>pitti |<br>SRRRRtt TT | a<br>0 SS  EERRRRREEEi<br>-2 0 2 4 6 8 10 12<br>Time (ms)<br>  Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Typical Short Circuit Protection** 

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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT223 (Type DN)<br>**----- End of picture text -----**<br>


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D<br>b2<br>C<br>Ea] F<br>. E1 E<br>Gauge<br>Plane<br>0.25<br>Seating L<br>Plane<br>e b<br>| e1<br>A A1<br>A2<br>——s<br>**----- End of picture text -----**<br>


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SOT223 (Type DN)<br>Dim  Min  Max  Typ<br>A --  1.70  --<br>= A1 0.01  0.15  --<br>A2 1.50 1.68 1.60<br>b 0.60 0.80 0.70<br>b2 2.90 3.10 --<br>c 0.20 0.32  --<br>D 6.30  6.70  --<br>E 6.70  7.30  --<br>E1 3.30  3.70  --<br>e --  --  2.30<br>e1 --  --  4.60<br>L 0.85  --  --<br>=== All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT223 (Type DN)** 

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X1<br>Y1<br>7<br>C1 Y2<br>Y<br>oo. X C<br>**----- End of picture text -----**<br>


|**Dimensions Value**|**Dimensions Value(in mm)**|
|---|---|
|**C**|2.30|
|**C1 **|6.40|
|**X**|1.20|
|**X1**|3.30|
|**Y**|1.60|
|**Y1**|1.60|
|**Y2**|8.00|



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**ZXMS6005DGQ-13 IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: ; | 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2018, Diodes Incorporated 

**www.diodes.com** 

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- [Supplier page](https://es.farnell.com/diodes-inc/zxms6005dgq-13/mosfet-n-ch-60v-2a-sot-223/dp/3944009)
---

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