# Power MOSFET, N Channel, 60 V, 2 A, 0.5 ohm, SOT-23F, Surface Mount

![Product image](https://novapart.co/image/farnell:4318406/)

**URL**: https://novapart.co/products/ZXMS6004FFTA/power-mosfet-n-channel-60-v-2-a-05-ohm-sot-23f
**SKU**: ZXMS6004FFTA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3400
**Stock**: 10+
**Lead Time**: 260 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 830mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 5V |
| Transistor Case Style | SOT-23F |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2A |
| Drain Source On State Resistance | 0.5ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4318406/)

**ZXMS6004FF** [sd 

**60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET** 

## **Product Summary** 

- Continuous Drain Source Voltage: 60V 

- On-State Resistance: 500mΩ 

- Nominal Load Current (VIN = 5V): 1.3A 

- Clamping Energy: 90mJ 

## **Features and Benefits** 

- Compact High Power Dissipation Package 

- Low Input Current 

- Logic Level Input (3.3V and 5V) 

- Short Circuit Protection with Auto Restart 

- Over Voltage Protection (Active Clamp) 

## **Description** 

The ZXMS6004FF is a self-protected low side IntelliFET™ MOSFET with logic level input. It integrates overtemperature, overcurrent, overvoltage (active clamp) and ESD protected logic level functionality. The ZXMS6004FF is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. 

## **Applications** 

- Especially Suited for Loads with a High In-Rush Current such as Lamps and Motors 

- All Types of Resistive, Inductive and Capacitive Loads in Switching Applications 

- μC Compatible Power Switch for 12V and 24V DC Applications 

- Automotive Rated 

- Replaces Electromechanical Relays and Discrete Circuits 

- Linear Mode Capability – the current-limiting protection circuitry is designed to de-activate at low VDS to minimize on state power dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product’s ability to self-protect at low VDS. 

- Thermal Shutdown with Auto Restart 

- Overcurrent Protection 

- Input Protection (ESD) 

- High Continuous Current Rating 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at** 

   - 

   - **https://www.diodes.com/products/automotive/automotive products/.** 

- **This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.** 

**https://www.diodes.com/quality/product-definitions/** 

- **An Automotive-Compliant Part is Available Under Separate Datasheet (ZXMS6004FFQ)** 

## **Mechanical Data** 

- Case: SOT23F 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Matte Tin Finish @>d 

- Weight: 0.012 grams (Approximate) 

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SOT23F<br>**----- End of picture text -----**<br>


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Top View  Top view<br>Pin Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|---|---|
||||||
|**Part Number**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity per Reel**|
|ZXMS6004FFTA|1K6|7|12|3,000|
|ZXMS6004FF-7|1K6|7|8|3,000|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

_IntelliFET is a trademark of Diodes Incorporated._ 

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**ZXMS6004FF** 

## LIVES. 

## **Marking Information** 

- 1K6 = Product Type Marking Code Y or Y:  Year: 0 to 9 

- **1K6** W or W: Week: A to Z: 1 to 26 a to z: 27 to 52 

- —& z: Represents 52 & 53 Week 

## **Functional Block Diagram** 

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## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Continuous Drain-Source Voltage|VDS|60|V|
|Drain-Source Voltage for Short Circuit Protection|VDS(SC)|36|V|
|Continuous Input Voltage|VIN<br>~~ee~~|-0.5 ... +6|V|
|Continuous Input Current @-0.2V ≤ VIN≤ 6V<br>Continuous Input Current@VIN< -0.2V or VIN> 6V<br>~~ee~~|IIN<br>~~ee~~<br>~~ee~~|No limit<br>│IIN │≤2<br>~~ee~~|mA<br>~~ee~~|
|Pulsed Drain Current@VIN= 3.3V|IDM<br>~~ee~~|2|A|
|Pulsed Drain Current@VIN= 5V|IDM|2.5|A|
|Continuous Source Current(BodyDiode)|IS|1|A|
|Pulsed Source Current(BodyDiode)|ISM|5|A|
|Unclamped Single Pulse Inductive Energy,<br>TJ= +25°C,ID= 0.5A,VDD= 24V<br>~~a~~|EAS<br>~~a~~|90<br>~~a~~|mJ<br>~~a~~|
|Electrostatic Discharge(Human BodyModel)|VESD|4,000|V|
|Charged Device Model|VCDM|1,000|V|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation @TA= +25°C (Note 5)<br>Linear DeratingFactor|PD|0.83<br>6.66|W<br>mW/°C|
|Power Dissipation @TA= +25°C (Note 6)<br>Linear DeratingFactor|PD|1.5<br>12.0|W<br>mW/°C|
|Thermal Resistance,Junction to Ambient(Note 5)|RθJA|150|C/W|
|Thermal Resistance,Junction to Ambient(Note 6)|RθJA|83|°C/W|
|Thermal Resistance,Junction to Case(Note 7)|RθJC|44|°C/W|
|OperatingTemperature Range|TJ|-40 to +150|°C|
|Storage Temperature Range|TSTG|-55 to +150|°C|



## **Recommended Operating Conditions** 

|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|---|---|---|---|---|
|Input Voltage Range|VIN|0|5.5|V|
|Ambient Temperature Range|TA|-40|+125|°C|
|High Level Input Voltage for MOSFET to be On|VIH|3|5.5|V|
|Low Level Input Voltage for MOSFET to be Off|VIL|0|0.7|V|
|Peripheral SupplyVoltage(Voltage to Which Load is Referred)|VP|0|36|V|



Notes: 5. For a device surface mounted on 15mm x 15mm single sided, 1oz weight copper on 1.6mm FR4 board, in still air conditions. 

6. For a device surface mounted on 50mm x 50mm single sided, 2oz weight copper on 1.6mm FR4 board, in still air conditions. 

7. Thermal resistance from junction and the mounting surfaces of the drain pins. 

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## LIES. 

## **Typical Thermal Characteristics** 

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1.6<br>——>__: |: nna a<br>Limited Limited by Over-Current Protection 1.4<br>by R DS(on)<br>1 Ci SSRN ELE SS =O 1.2 aN 50X50mm FR4<br>NES 1.0 FOR        2oz Cu<br>DC 1s 0.8<br>100m PiEE 100ms SESSANAS 0.6 pittN|NTXX<br>Single Pulse<br>T amb =25° o C Tt 10ms | 1ms SEH 0.4 15X15mm FR4  MS<br>10m 15X15mm FR4  1oz Cu Limit of s/c protection 0.2        1oz Cu<br>0.0<br>1 10 0 25 50 75 100 125 150<br>VDS  Drain-Source Voltage (V)  Temperature  ( o°C)C)<br>Safe Operating Area Derating Curve<br>160<br>140 T amb =25°o C 100 Single Pulse<br>15X15mm FR4  oS )| ha® T =25°oCC  I<br>amb<br>120 1oz Cu<br>15X15mm FR4<br>100 a Satins watt 1oz Cu ul<br>D=0.5<br>80 Lamas BRNO"Faull a 10 CTH TATA il<br>60 PCT Cogan Single Pulse EH HE SNE<br>40 D=0.2 i977LUI VAAN D=0.05 i i SetiTETseat seit util wetil aeti atl<br>20 SHAani D=0.1 Mi 1 MMMTIT  TSS TI TTT STTTT TlTTT<br>0 rtm TT atl TT 1 0 EEESei ee e eeet eseE t eecEEE t e<br>100µμ  1m 10m 100m 1 10 100 1k 100µμ  1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>  Drain Current (A)<br>ID<br> Max Power Dissipation (W)<br>/W)<br>C  Maximum Power (W)<br>Thermal Resistance (°<br>o<br>**----- End of picture text -----**<br>


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## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**<br>~~ee~~|**Test Condition**|
|**Static Characteristics**<br>~~ee~~<br>~~ee~~|||||||
|Drain-Source ClampVoltage<br>~~ee~~|VDS(AZ)<br>~~ee~~|60<br>~~ee~~|65<br>~~ee~~|70<br>~~ee~~|V<br>~~ee~~<br>~~ee~~|ID= 10mA<br>~~ee~~|
|Off-State Drain Current<br>~~ee~~|IDSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|500<br>~~ee~~|nA<br>~~ee~~<br>~~ee~~|VDS= 12V,VIN= 0V<br>~~ee~~|
|||—<br>~~ee~~|—<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~<br>~~GO~~|VDS= 36V,VIN= 0V<br>~~ee~~|
|Input Threshold Voltage<br>~~a~~|VIN(TH)<br>~~GG~~|0.7<br>~~GG~~|1<br>~~GG~~|1.5<br>~~GG~~|V<br>~~GG~~<br>~~GO~~|VDS= VGS,ID= 1mA<br>~~GG~~|
|Input Current<br>~~ey~~|IIN<br>~~ey~~|—<br>~~ey~~|60<br>~~ey~~|100<br>~~ey~~|μA<br>~~GO~~<br>~~ey~~<br>~~GO~~|VIN= +3V<br>~~ey~~|
|||—<br>~~ey~~|120<br>~~ey~~|200<br>~~ey~~||VIN= +5V<br>~~ey~~|
|Input Current while Overtemperature Active<br>~~a~~|—<br>~~GG~~|—<br>~~GG~~|—<br>~~GG~~|220<br>~~GG~~|μA<br>~~GG~~<br>~~GO~~|VIN= +5V<br>~~GG~~|
|Static Drain-Source On-State Resistance<br>~~py~~|RDS(ON)<br>~~py~~|—<br>~~py~~|400<br>~~py~~|600<br>~~py~~|mΩ<br>~~GO~~<br>~~py~~|VIN= +3V,ID= 0.5A<br>~~py~~|
|||—<br>~~py~~|350<br>~~py~~|500<br>~~py~~||VIN= +5V,ID= 0.5A<br>~~py~~|
|Continuous Drain Current (Note 5)<br>~~et~~|ID<br>~~t~~|0.9|—|—|A<br>~~eepO~~|VIN= 3V,TA= +25°C|
|||1.0<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~||VIN= 5V,TA= +25°C<br>~~pO~~|
|Continuous Drain Current (Note 6)<br>~~et~~||1.2<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~||VIN= 3V,TA= +25°C<br>~~pO~~|
|||1.3<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~||VIN= 5V,TA= +25°C<br>~~pO~~|
|Current Limit (Note 8)<br>~~et~~<br>~~ee~~|ID(LIM)<br>~~t~~<br>~~ee~~|0.7<br>~~ee~~<br>~~ee~~|1.7<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|A<br>~~ee pO~~<br>~~ee~~|VIN= +3V<br>~~pO~~<br>~~ee~~|
|||1<br>~~ee~~|2.2<br>~~ee~~|—<br>~~ee~~||VIN= +5V<br>~~ee~~|
|**Dynamic Characteristics**|||||||
|Turn-On DelayTime<br>~~a~~|tD(ON)<br>~~a~~|—<br>~~a~~|5<br>~~a~~|—<br>~~a~~|μs|VDD= 12V, ID= 0.5A, VGS= 5V|
|Rise Time<br>~~a~~|tR<br>~~a~~|—<br>~~a~~|10<br>~~a~~|—<br>~~a~~|||
|Turn-Off DelayTime|tD(OFF)|—|45|—|||
|Fall Time|fF|—|15|—|||
|**Overtemperature Protection**<br>~~eeeeeeeeee~~|||||||
|Thermal Overload TripTemperature(Note 9)<br>~~ee~~|TJT<br>~~ee~~<br>~~ee~~|+150<br>~~ee~~<br>~~ee~~|+175<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~<br>~~ee~~|—<br>~~ee~~|
|Thermal Hysteresis(Note 9)<br>~~ee~~|fF<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|+10<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~<br>~~ee~~|—<br>~~ee~~|



Notes: 5. For a device surface mounted on 15mm x 15mm single sided, 1oz weight copper on 1.6mm FR4 board, in still air conditions. 6. For a device surface mounted on 50mm x 50mm single sided, 2oz weight copper on 1.6mm FR4 board, in still air conditions. 

7. Thermal resistance from junction and the mounting surfaces of the drain pins. 

8. The drain current is restricted only when the device is in saturation (see graph ‘Typical Output Characteristic’). This allows the device to be used in the fully on-state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. 

   9. Overtemperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal operating range, so this part is not designed to withstand over-temperature for extended periods. 

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## **Typical Performance Characteristics** 

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120<br>100<br>pf fof ff ft fT tA<br>80<br>ee<br>eee eee<br>60<br>40 a |<br>20<br>0 ee,ey,aey,aa a<br>0 1 2 3 4 5<br>VIN Input Voltage (V)IN Input Voltage (V) Input Voltage (V)<br>A)<br><br> Input Current (IININ<br>IININ<br>**----- End of picture text -----**<br>


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3 TA = 25°o C<br>VIN 100<br>TALL LL pf fof ff ft fT tA<br>5.5V<br>2 fyNee(\szaz=sss=======eS 5.0V 80 ee<br>ee 4.5V eee eee<br>4.0V 60<br>3.5V<br>1 | MSSASUUNERRRORREEREREE 3.0V 40 a |<br>2.5V<br>2.0V 20<br>0 PLUPELL  EEL 4TTT EEL EL  ET EL 0 ee,ey,aey,aa a<br>0 1 2 3 4 5 6 7 8 9 10 11 12 0 1 2 3 4 5<br>VDS  Drain-Source Voltage (V) VIN Input Voltage (V)IN Input Voltage (V) Input Voltage (V)<br>Typical Output Characteristic Input Current vs Input Voltage<br>1.4<br>1.4<br>I D  = 0.5A 1.3 VIN = VDS<br>1.2 I  = 1mA<br>SRS D<br>1.0 1.2<br>fs eee SFFSSARREPEE<br>0.8<br>1.1 PoNIE<br>oe 4]<br>0.6 FX | | i T = 150° o C ee ee<br>a J 1.0 a<br>0.4<br>0.9<br>0.20.0 ===a T J  = 25° o C 0.8 POSSa PSN<br>1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -75 -50 -25 0 25 50 75 100 125 150<br>VIN  Input Voltage (V) TJ  Junction Temperature (°C)( [o] C)<br>On-Resistance vs Input Voltage Threshold Voltage vs Temperature<br>0.9 10<br>0.8<br>T =150°o C<br>J<br>0.7<br>1<br>0.6 +++ V IN  = 3V LT [TAA vw] of ll<br>0.5 Beeneaee el  ==IZ27 = T ———= J =25° o C<br>0.1<br>0.4 V IN  = 5V<br>0.3 eeeEe Seana===<br>0.2 Ptr] TEL 0.01 ey a<br>-75 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2<br>TJ  Junction Temperature (°C)( [o] C)   VSD  Source-Drain Voltage (V)<br>A)<br><br>  Drain Current (A)<br>ID  Input Current (IININ<br>)<br><br> On-Resistance (<br>DS(on)   Threshold Voltage (V)<br>R TH<br>V<br>)<br><br> On-Resistance (<br>  Source Curent (A)<br>DS(on) S<br>R  I<br>**----- End of picture text -----**<br>


**Reverse Diode Characteristic** 

**On-Resistance vs Temperature** 

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**ZXMS6004FF** 

## **Typical Performance Characteristics** (Continued) 

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12 12<br>I D =500mA V I D =500mA<br>10 Se V 10 OS DS<br>con DS | | fT cor ain<br>| tt | | | | | | tT ee eee<br>8 mma eee 8 aee<br>|] ty] | dT dT | | | TTTT | {| tT | TT | PT | TT TT<br>6 | | tt} | TdT hd | dT | TE Tf TT 6 |] Wey | | Th | cE Tt TT<br>|] Tht | | | | TE | ET TT PEteee<br>4 V IN 4 V IN<br>FREER EEA) AREER ERE<br>2 eee ei 2 eee ee<br>BN P| WAT | | | cP | TE ET<br>0 2ee| ee 0 eeeeee<br>-50 0 50 100 150 200 250 300 -50 0 50 100 150 200 250 300<br>Time (s) Time (s)<br>Drain-Source Voltage (V) Drain-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Switching Speed** 

## **Switching Speed** 

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2.5<br>| | | | | | V IN  = 5V<br>2.0 | fe | | ct V DS  = 15V<br>| A | | | R D  = 0<br>1.5 2Ne<br>p|Mt<br>1.0 | | | |vPhmmfhhanh| | dt<br>ee<br>0.5<br>Pt |TI<br>ee<br>0.0 ee<br>0 5 10 15 20<br>Time (ms)<br>  Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Typical Short Circuit Protection** 

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**ZXMS6004FF** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT23F** 

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D c<br>b<br>SOT23F<br>L1<br>Dim  Min  Max  Typ<br>A  0.80 1.00 0.90<br>1 ———— A1  0.00 0.10 0.01<br>E1 E<br>b 0.35 0.50 0.44<br>c  0.10 0.20 0.16<br>D  2.80 3.00 2.90<br>e  0.95 REF<br>a b = e1  1.90 REF<br>E  2.30 2.50 2.40<br>e1<br>— ——— E1  1.50 1.70 1.65<br>e k  1.20 -  -<br>L  0.30 0.65 0.50<br>L L1  0.30 0.50 0.40<br>ih 5=5= R  0.05 0.15 -<br>A All Dimensions in mm<br>k<br>ai _<br>R<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT23F** 

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**----- Start of picture text -----**<br>
X C<br>Tr<br>Dimensions  Value  (in mm)<br>C  0.95<br>‘i X  0.80<br>Y1 Y  1.110<br>Y1  3.000<br>Y<br>ue —<br>**----- End of picture text -----**<br>


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**ZXMS6004FF** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/)  or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2020 Diodes Incorporated 

**www.diodes.com** 

9 of 9 **www.diodes.com** 

ZXMS6004FF Document number: DS33609 Rev. 8 - 2 

November 2020 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/ZXMS6004FFTA/power-mosfet-n-channel-60-v-2-a-05-ohm-sot-23f)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/zxms6004ffta/mosfet-n-ch-60v-2a-sot-23f/dp/4318406)
---

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