# Power MOSFET, P Channel, 60 V, 3 A, 0.096 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:3405227RL/)

**URL**: https://novapart.co/products/ZXMP6A17GQTA/power-mosfet-p-channel-60-v-3-a-0096-ohm-sot-223
**SKU**: ZXMP6A17GQTA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2190
**Stock**: 200+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3A |
| Drain Source On State Resistance | 0.096ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3405227RL/)

@ **Green** 

**ZXMP6A17GQ** [ 

## **60V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(on)**|**ID**<br>**TA = +25°C**|
|-60V|125mΩ @ VGS= -10V|-4.3A|
||190mΩ @ VGS= -4.5V|-3.5A|



## **Features and Benefits** 

- Fast Switching Speed 

- Low Gate Drive 

- Low Input Capacitance 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Description** 

This MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. 

## **Mechanical Data** 

- Case: SOT223 

- Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

## **Applications** 

- Motor Control 

- DC-DC Converters 

   - Terminals: Finish—Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.112 grams (Approximate) 

- Power Management Functions 

- Uninterrupted Power Supply 

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    SOT223<br>**----- End of picture text -----**<br>


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## **Ordering Information** (Notes 4 & 5) 

|**Ordering Informationg Information Information**(Notes 4 & 5)|**Ordering Informationg Information Information**(Notes 4 & 5)|**Ordering Informationg Information Information**(Notes 4 & 5)|**Ordering Informationg Information Information**(Notes 4 & 5)|
|---|---|---|---|
|**Part Number**<br>**Compliance**<br>**Case**<br>**Packaging**<br>ZXMP6A17GQTA<br>Automotive<br>SOT223<br>1000/Tape &Reel<br>ZXMP6A17GQTC<br>Automotive<br>SOT223<br>4000/Tape &Reel||||
|**Part Number**|**Compliance**|**Case**|**Packaging**|
|ZXMP6A17GQTA|Automotive|SOT223|1000/Tape &Reel|
|ZXMP6A17GQTC|Automotive|SOT223|4000/Tape &Reel|



Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/. 

5. For packaging details, see http://www.diodes.com/products/packages.html. 

## **Marking Information** 

SOT223 

ZXMP6A17 = Product Type Marking Code YWW = Date Code Marking Y or Y= Year (ex: 8 = 2018) WW or WW = Week (01 - 53) 

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**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-60|V|
|Gate-Source Voltage|||VGS|20|V|
|Continuous Drain Current|VGS= 10V|(Note 7)|ID|-4.3|A|
|||TA= +70°C(Note 7)||-3.5||
|||(Note 6)||-3||
|Pulsed Drain Current|VGS= 10V|(Note 8)|IDM|-13.7|A|
|Continuous Source Current (BodyDiode)||(Note 7)|IS|-4.8|A|
|Pulsed Source Current (BodyDiode)||(Note 8)|ISM|-13.7|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation<br>Linear Derating Factor|(Note 6)|PD|2<br>16|W<br>mW/°C|
||(Note 7)||3.9<br>31||
|Thermal Resistance, Junction to Ambient|(Note 6)|RϴJA|62.5|°C/W|
||(Note 7)||32||
|Thermal Resistance, Junction to Lead|(Note 9)|RϴJL|9.8||
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



Notes: 6. For a device surface mounted on 25mm × 25mm × 1.6mm FR4 PCB with high coverage of single-sided 1oz copper. In still air conditions; the device is measured when operating in a steady-state condition. 

7. Same as Note 6 except the device is measured at t  10s. 

8. Same as Note 6 except the device is pulsed with D = 0.02 and pulse width of 300µs. The pulse current is limited by the maximum junction temperature. 

9. Thermal resistance from junction to solder point (at the end of the drain lead). 

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## **Thermal Characteristics** 

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R 2.0<br>10 DS(on) 25mm x 25mm<br>| Limited aeR Y || SS 1oz FR4<br>Rep” A. “Ge, “SEE Ge Se. SE BE 1.6<br>a ee eS ee  anil NX<br>1 SANE NSO 1.2 \<br>DC<br>fm 1s TOSCO ERS pry<br>Yt tty 100ms a ain iil 0.8 \<br>100m<br>10ms<br>2 Single PulseT =25°C a=—.-a 1ms eee. 100µs i. iEni 0.4 \ NN<br>10m amb PP 0.0 N<br>ees anil ELE EE EEE<br>1 10 100 0 20 40 60 80 100 120 140 160<br>-VDS  Drain-Source Voltage (V)  Temperature (°C)<br>Safe Operating Area Derating Curve<br>  Drain Current (A)<br>D<br>-I<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


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70<br>Z Cn nono Sena<br>T =25°C<br>60 F amb CCC RE CHC ECM Single Pulse il<br>T =25°C<br>50 a UATE TUTTE IT |  Tag 100 a a amb Il)<br>vey i FEE HENHEHE<br>40 PECTIC Sait emea teatHEEHHtl<br>30 PPT D=0.5 STLer Tae | ini Ci CnCa SSC CFTC<br>Meee CUCU 10 UA TTI TUTTI TIT ETT TT<br>20 D=0.2 Single Pulse<br>ea Mt as cnn | |<br>10 srr J RlOG D=0.05 HA il! coCCI TSA<br>D=0.1<br>0 SSTet CN COHtCU 1 TCC TTTill<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


**Transient Thermal Impedance** 

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**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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|||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|nD|Characteristic|Us|Symbol|Min|nD|Typ|(I|Max|(RS|Unit|(OO|Test Condition|
|OFF CHARACTERISTICS|
|Paes|Drain-Source Breakdown Voltage|BVDSS|-60|||V|ID = -250µA, VGS = 0V|
|nn|Zero Gate Voltage Drain Current|(nn|IDSS|nS||I||-0.5|I|µA|(OO|VDS = -60V, VGS = 0V|
|nn|Gate-Source Leakage|GU|IGSS||(RD||100|I|nA|(OS|VGS = 20V, VDS = 0V|
|ON CHARACTERISTICS|
|(I|Gate Threshold Voltage|VGS(th)|I|-1|ID||I||V|(OO|ID = -250μA, VDS = VGS|
|0.096|0.125|VGS = -10V, ID = -2.2A|
|Static Drain-Source On-Resistance (Note 10)|RDS(ON)||Ω|
|i|0.12|0.19|VGS = -4.5V, ID = -1.8A|
|Forward Transconductance (Notes 10 & 11)|gfs||4.7||S|VDS = -15V, ID = -2.2A|
|Paes|
|nn|Diode Forward Voltage (Note 10)|(nn|VSD|nS||-0.85|I|-0.95|I|V|(OO|IS = -2A, VGS = 0V, TJ = +25°C|
|Reverse Recovery Time (Note 11)|trr|25.1||ns|IS = -1.7A, di/dt = 100A/µs,|
|Reverse Recovery Charge (Note 11)|Qrr||27.2||nC|TJ = +25°C|
|Ce|DYNAMIC CHARACTERISTICS (Note 11)|
|nD|Input Capacitance|Ciss||637||pF|
|Output Capacitance|Coss||70||pF|VDS = -30V, VGS = 0V|
|f = 1MHz|
|———|Reverse Transfer Capacitance|ee|C|I|rss|ee||ee|53|oe||oe|pF|
|nD|Total Gate Charge (Note 12)|I|Qg|I||I|9|I||nC|I|VGS = -4.5V|
|a|Total Gate Charge (Note 12)|Gd|Qg||17.7||nC|VDS = -30V|
|Gate-Source Charge (Note 12)|Qgs||1.6||nC|VGS = -10V|ID = -2.2A|
|Gate-Drain Charge (Note 12)|Qgd||4.4||nC|
|Turn-On Delay Time (Note 12)|tD(on)||2.6||ns|
|Turn-On Rise Time (Note 12)|tr||3.4||ns|VDD = -30V, VGS = -10V|
|I|
|a|Turn-Off Delay Time (Note 12)|Gd|tD(off)||26.2||ns|ID = -1A, RG  6Ω|
|n|Turn-Off Fall Time (Note 12)|Dynny|tf|nn||11.3|I|EE||GE|ns|ee|

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Notes: 10. Measured under pulsed conditions. Pulse width  300µs; duty cycle  2%. 

11. For design aid only—not subject to production testing. 

12. Switching characteristics are independent of operating junction temperatures. 

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**ZXMP6A17GQ** 

## **Typical Characteristics** 

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T = 25°C 10V 5V T = 150°C 10V 5V<br>10 ii | | | | er 4V | | | 10 ieee -—..... 4.5V ||<br>=—$— === 3.5V = 525 — eee = 3.5V =<br>CotIL|_| peer 3V —_= PoI| | eo enee 3V =_<br>| gh OH | SNe oie eee 2.5V<br>1 2.5V 1<br>WATAZz eee | Bg<br>OF errr LEE 2V 4<br>0.1 oo|a eee 2V 0.1 Boreet| TTif eee -V GS<br>eeler ii; tT 0 ee -VGS |]= 20 ee 1.5V eee<br>0.01 Ee2 ll i 0.01 Ta eee TTTETTTT<br>0.1 1 10 0.1 1 10<br>-VDS  Drain-Source Voltage (V) -VDS  Drain-Source Voltage (V)<br>Output Characteristics Output Characteristics<br>1.8<br>V  = -10V<br>10 GS<br>a<br>SS =—— 1.6 I D  = - 2.3A<br>a es es ee ee<br>R<br>1.4 DS(on)<br>T = 150°C<br>1 [_—————————ee ae 1.2 aer<br>are eees ee)Ae A),  Ae es ee —_<br>T = 25°C 1.0<br>—————— Tm<br>V<br>0.1 4) aa -V  = 10V 0.8 aa V GS  = V DS GS(th)<br>ee A 2 ee es ee DS ee ID = -250uA<br>———_rtCC(iC 0.6 — ——™~<br>1 2 3 4 -50 0 50 100 150<br>-VGS  Gate-Source Voltage (V) Tj  Junction Temperature (°C)<br>Typical Transfer Characteristics Normalised Curves v Temperature<br>100 0ee 2V LEE dd -V ——— 10 PoSS —S= ==_=_—_————<br>GS<br>2.5V<br>10 peeee 3V Se ——_——_— T = 150°C SS SS<br>Dimas 3.5V 1 ny Aur Aen<br>4V<br>1 ieeeeeFo —_———eea Ss Se<br>5V T = 25°C<br>_——S 0.1 Ae) A eee<br>0.1 i 10V See a<br>—— er ny Ay, a<br>et T = 25°C —f VGS= 0V<br>0.01 eesPoo| ere eenaneTT 0.01 aee Aee e aee<br>0.1 1 10 0.2 0.4 0.6 0.8 1.0 1.2<br>-ID  Drain Current (A) -VSD  Source-Drain Voltage (V)<br>On-Resistance v Drain Current Source-Drain Diode Forward Voltage<br>  Drain Current (A)   Drain Current (A)<br>D D<br>-I -I<br>GS(th)<br> and V<br>DS(on)<br>  Drain Current (A)<br>D<br>-I<br>Normalised R<br>  Reverse Drain Current (A)<br>SD<br> Drain-Source On-Resistance  -I<br>DS(on)<br>R<br><br>**----- End of picture text -----**<br>


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## **Typical Characteristics** (continued) 

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1000 10<br>V  = 0V<br>GS<br>mH il PT TT TTT Ty yy<br>800 an. f = 1MHz a 8 PTT TTT TT TTT TTT Ty TT<br>a C el FETT TTT TTT A<br>600 ISS 6<br>C<br>pon GD) OSS  pa PLT TT TT TTT Pe<br>400 Ze se te C RSS fa 4 PITT TTT TT EArt ET<br>eB|) ++ PTT TT TT | AETT<br>200 a 2 PITTI TTA EET I D  = -2.3A TT<br>CI S|SST PyeVeGeeeeeenee V DS  = -30V |a<br>0 ee 0 Viti itt tt ty a<br>0.1 1 10 0 2 4 6 8 10 12 14 16 18<br>-VDS - Drain - Source Voltage (V) Q - Charge (nC)<br>Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge<br>C  Capacitance (pF)<br>  Gate-Source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


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Capacitance v Drain-Source Voltage<br>**----- End of picture text -----**<br>


## **Test Circuits** 

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**ZXMP6A17GQ** 

## **Package Outline Dimensions** 

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Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SOT223<br>D<br>b1 Q<br>C<br>SOT223<br>Dim  Min  Max  Typ<br>A 1.55  1.65  1.60<br>=f | —= A1 0.010 0.15 0.05<br>E E1<br>| === b 0.60 0.80 0.70<br>b1 2.90 3.10 3.00<br>Gauge<br>Plane C 0.20  0.30  0.25<br>0.25 D 6.45  6.55  6.50<br>Seating L E 3.45  3.55  3.50<br>Plane 4) EEE<br>E1 6.90  7.10  7.00<br>e1 b e -  -  4.60<br>e e1 -  -  2.30<br>L 0.85  1.05  0.95<br>Q 0.84  0.94  0.89<br>A A1 7° All Dimensions in mm<br>0°-10°<br>7°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT223<br>**----- End of picture text -----**<br>


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X1<br>Y1<br>a<br>C1 Y2<br>Y<br>aoe X C<br>**----- End of picture text -----**<br>


|**Dimensions Value**|**Dimensions Value(in mm)**|
|---|---|
|**C**|2.30|
|**C1**|6.40|
|**X**|1.20|
|**X1**|3.30|
|**Y**|1.60|
|**Y1**|1.60|
|**Y2**|8.00|



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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2018, Diodes Incorporated **www.diodes.com** 

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## Links

- [View this product on Novapart](https://novapart.co/products/ZXMP6A17GQTA/power-mosfet-p-channel-60-v-3-a-0096-ohm-sot-223)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/zxmp6a17gqta/mosfet-p-ch-60v-3a-150deg-c-2w/dp/3405227RL)
---

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