# Power MOSFET, P Channel, 60 V, 1.1 A, 0.4 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:4318424/)

**URL**: https://novapart.co/products/ZXMP6A13FTA/power-mosfet-p-channel-60-v-11-a-04-ohm-sot-23
**SKU**: ZXMP6A13FTA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2360
**Stock**: 10+
**Lead Time**: 298 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 625mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.1A |
| Drain Source On State Resistance | 0.4ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4318424/)

**ZXMP6A13F** 

**60V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**Max RDS(on)**|**Max ID**<br>**TA = +25**°**C**|
|-60V|400mΩ @VGS= -10V|-1.1A|
||600mΩ @VGS = -4.5V|-0.9A|



## **Features** 

- Fast switching speed 

- Low input capacitance 

- Low gate charge 

- **Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description** 

This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications. 

## **Applications** 

- DC-DC Converters 

- Power Management Functions 

- Relay and Solenoid Driving 

- Motor Control 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

- Case: SOT23 

- Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 

- Weight: 0.008 grams (approximate) 

SOT23 

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## **Ordering Information** (Notes 4) 

|**Ordering Informationg Information Information**(Notes 4)Notes 4)|(Notes 4)Notes 4))|||
|---|---|---|---|
|**Product**|**Compliance**|**Case**|**Packaging**|
|ZXMP6A13FTA|Standard|SOT23|3,000 / Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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7P6<br>**----- End of picture text -----**<br>


7P6 = Product Type Marking Code 

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**ZXMP6A13F** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|-60|V|
|Gate-Source Voltage|||VGS|±20|V|
|Continuous Drain Current|VGS= -10V|(Note 7)<br>TA= +70°C     (Note 7)<br>(Note 6)|ID|-1.1<br>-0.8<br>-0.9|A|
|Pulsed Drain Current(Note 7)|||IDM|-4|A|
|Continuous Source Current(BodyDiode) (Note 6)|||IS|-1.2|A|
|Pulsed Source Current(BodyDiode) (Note 7)|||ISM|-4|A|



**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation (Note 5)<br>Linear DeratingFactor|PD|625<br>5|mW<br>mW/°C|
|Power Dissipation (Note 6)<br>Linear DeratingFactor|PD|806<br>6.5|mW<br>mW/°C|
|Thermal Resistance,Junction to Ambient(Note 5)|RθJA|200|°C/W|
|Thermal Resistance,Junction to Ambient(Note 6)|RθJA|155|°C/W|
|Thermal Resistance,Junction to Leads(Note 8)|RθJL|194|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions 

6. For a device surface mounted on FR4 PCB measured at t ≤ 5secs. 

8. Thermal resistance from junction to solder-point (at the end of the collector lead). 

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**ZXMP6A13F** [ 

## **Thermal Characteristics** 

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10 0.7<br>R<br>DS(on) 0.6<br>Limited<br>1 (ANS 0.5 eV eee<br>0.4<br>DC<br>100m PhuPu 1s CORNOAS OA TL 0.3 fae\<br>100ms<br>EEE 10ms HENS SSE 0.2 IN<br>10m Pt Single Pulse UZ 1ms TINA iil 0.1 eae wr<br>Tamb=25°C 100µs<br>0.0<br>1 10 100 0 20 40 60 80 100 120 140 160<br>-VDS  Drain-Source Voltage (V)  Temperature (°C)<br>Safe Operating Area Derating Curve<br>200 T amb =25°C Single Pulse<br>|aEee tll Ban,S GAH E T amb =25 ° C I<br>150<br>BE 0 A 10 NUT TTT il<br>D=0.5<br>100 pT TTT qo<br>a7, lim | |<br>Single Pulse<br>D=0.2<br>50 nee 55 Aili D=0.05 i 1 A<br>1<br>HIN iy Se<br>D=0.1<br>0<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>  Drain Current (A)<br>D<br>-I<br> Max Power Dissipation (W)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


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**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~Pe~~|**Symbol**<br>~~Pe~~<br>~~fe~~|**Min**<br>~~Pe~~<br>~~fe~~|**Typ**<br>~~Pe~~|**Max**<br>~~Pe~~|**Unit**<br>~~Pe~~|**Test Condition**<br>~~Pe~~|
|**OFF CHARACTERISTICS**<br>~~fe~~<br>~~ODGO~~<br>~~(OO(OO~~|||||||
|Drain-Source Breakdown Voltage<br>~~nD~~<br>~~a~~|BVDSS<br>~~nD~~<br>~~OD~~<br>~~Ds~~|-60<br>~~nD~~<br>~~GO~~<br>~~Ds~~|⎯<br>~~nD~~<br>~~GO~~<br>~~(RR~~|⎯<br>~~nD~~<br>~~(OO~~<br>~~(OR~~|V<br>~~nD~~<br>~~(OO~~<br>~~(OR~~|ID= -250µA, VGS= 0V<br>~~nD~~<br>~~(OO~~<br>~~(OU~~|
|Zero Gate Voltage Drain Current<br>~~RD~~<br>~~a~~|IDSS<br>~~OD~~<br>~~RD~~<br>~~Ds~~<br>~~nD~~|⎯<br>~~GO~~<br>~~RD~~<br>~~Ds~~<br>~~I~~|⎯<br>~~GO~~<br>~~RD~~<br>~~(RR~~<br>~~I~~|-0.5<br>~~(OO~~<br>~~RD~~<br>~~(OR~~<br>~~nD OS~~|µA<br>~~(OO ~~<br>~~RD~~<br>~~(OR~~<br>~~OS~~|VDS= -60V, VGS= 0V<br> ~~(OO~~<br>~~RD~~<br>~~(OU~~|
|Gate-Source Leakage<br>~~a~~|IGSS<br>~~Ds~~<br>~~nD~~|⎯<br>~~Ds~~<br>~~I~~|⎯<br>~~(RR~~<br>~~I~~|±100<br>~~(OR~~<br>~~nD OS~~|nA<br>~~(OR ~~<br>~~OS~~|VGS=±20V, VDS= 0V<br> ~~(OU~~|
|**ON CHARACTERISTICS**<br>~~nD I I~~<br>~~nD OS~~<br>~~—————————————————————E~~|||||||
|Gate Threshold Voltage<br>~~—————————————————————E~~|VGS(th)<br>~~—————————————————————E~~|-1<br>~~—————————————————————E~~|⎯<br>~~—————————————————————E~~|-3<br>~~—————————————————————E~~|V<br>~~—————————————————————E~~|ID= -250μA, VDS= VGS<br>~~—————————————————————E~~|
|Static Drain-Source On-Resistance (Note 9)<br>~~—————————————————————E~~<br>~~a~~|RDS (ON)<br>~~—————————————————————E~~<br>~~a~~<br>~~SD~~|⎯<br>~~—————————————————————E~~<br>~~a~~<br>~~I~~|⎯<br>~~—————————————————————E~~<br>~~a~~<br>~~I~~|0.400<br>~~—————————————————————E~~<br>~~a~~|Ω<br>~~—————————————————————E~~<br>~~a~~<br>~~DS~~|VGS= -10V, ID= -0.9A<br>~~—————————————————————E~~<br>~~a~~|
|||||0.600<br>~~—————————————————————E~~<br>~~a~~<br>~~DS~~||VGS= -4.5V, ID= -0.8A<br>~~—————————————————————E~~<br>~~a~~|
|Forward Transconductance (Notes 9 & 11)<br>~~aD~~|gfs<br>~~aD~~<br>~~SD~~|⎯<br>~~aD~~<br>~~I~~|1.8<br>~~aD~~<br>~~I~~|⎯<br>~~aD~~<br>~~DS~~|S<br>~~aD~~<br>~~DS~~|VDS= -15V, ID= -0.9A<br>~~aD~~|
|Diode Forward Voltage (Note 9)<br>~~S$~~|VSD<br>~~SD ~~<br>~~tt~~|⎯<br> ~~I ~~<br>~~tt~~|-0.85<br> ~~I~~<br>~~tt~~|-0.95<br>~~DS~~<br>~~rH~~|V<br>~~DS~~<br>~~rH~~|TJ= +25°C, IS= -0.8A, VGS= 0V|
|Reverse Recovery Time (Note 11)<br>~~S$~~|trr<br>~~tt~~|⎯<br>~~tt~~|21.1<br>~~tt~~|⎯<br>~~rH~~|ns<br>~~rH~~|TJ= +25°C, IF= -0.9A,<br>di/dt = 100A/μs|
|Reverse Recovery Charge (Note 11)<br>~~S$~~|Qrr<br>~~tt~~|⎯<br>~~tt~~|19.3<br>~~tt~~|⎯<br>~~rH~~|nC<br>~~rH~~||
|**DYNAMIC CHARACTERISTICS** (Note 11)<br>~~S$~~<br>~~tt~~<br>~~rH~~<br>~~es~~<br>~~eeee eeel~~|||||||
|Input Capacitance<br>~~a~~<br>~~es~~|Ciss<br>~~a~~<br>~~es~~<br>~~es~~<br>~~ee~~|⎯<br>~~a~~<br>~~es~~<br>~~ee ee~~|219<br>~~a~~<br>~~es~~<br>~~ee~~|⎯<br>~~a~~<br>~~es~~<br>~~ee~~|pF<br>~~es~~<br>~~el~~|VDS= -30V, VGS= 0V<br>f = 1MHz<br>~~es~~<br>~~el~~|
|Output Capacitance<br>~~es~~|Coss<br>~~es~~<br>~~es~~<br>~~ee~~|⎯<br>~~es~~<br>~~ee ee~~|25.7<br>~~es~~<br>~~ee~~|⎯<br>~~es~~<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~es~~|Crss<br>~~es~~<br>~~ee~~|⎯<br>~~es~~<br>~~ee ee~~|20.5<br>~~es~~<br>~~ee~~|⎯<br>~~es~~<br>~~ee~~|||
|Turn-On Delay Time (Note 10)|tD(on)<br>~~ee ~~|⎯<br> ~~ee ee~~|1.6<br>~~ee~~|⎯<br>~~ee ~~|ns<br> ~~el~~<br>|VDD= -30V, ID= -1A,<br>RG ≅6.0Ω,VGS= -10V<br>~~el~~<br>|
|Turn-On Rise Time (Note 10)<br>~~Ds~~<br>~~a~~|tr<br>~~Ds~~<br>~~es~~<br>|⎯<br>~~Ds~~<br>|2.2<br>~~Ds~~<br>~~GO~~<br>|⎯<br>~~Ds~~<br>|||
|Turn-Off Delay Time (Note 10)<br>~~a~~<br>~~a~~|tD(off)<br>~~a~~<br>~~es~~<br>|⎯<br>~~a~~<br>|11.2<br>~~a~~<br>~~GO~~<br>|⎯<br>~~a~~<br>|||
|Turn-Off Fall Time (Note 10)<br>~~a~~|tf<br>~~es~~<br>|⎯<br>|5.7<br>~~GO~~<br>|⎯<br>|||
|Total Gate Charge (Note 10)<br>~~arp~~|Qg<br>~~es~~<br>~~rp~~<br>~~ee~~|⎯<br>~~rp~~<br>~~ee~~|2.9<br>~~GO~~<br>~~rp~~<br>~~ee~~|⎯<br>~~rp~~<br>~~ee~~|nC<br>~~rp~~<br>~~ee~~|VDS= -30V, VGS= -4.5V,<br>ID= -0.9A<br>~~rp~~|
|Total Gate Charge (Note 10)<br>~~rp~~<br>~~es~~|Qg<br>~~rp~~<br>~~es~~<br>~~ee~~|⎯<br>~~rp~~<br>~~es~~<br>~~ee~~|5.9<br>~~rp~~<br>~~es~~<br>~~ee~~|⎯<br>~~rp~~<br>~~es~~<br>~~ee~~|nC<br>~~rp~~<br>~~es~~<br>~~ee~~|VDS= -30V, VGS= -10V,<br>ID= -0.9A<br>~~rp~~<br>~~es~~|
|Gate-Source Charge (Note 10)<br>~~es~~|Qgs<br>~~es~~<br>~~ee~~|⎯<br>~~es~~<br>~~ee~~|0.74<br>~~es~~<br>~~ee~~|⎯<br>~~es~~<br>~~ee~~|||
|Gate-Drain Charge (Note 10)<br>~~es~~|Qgd<br>~~es~~<br>~~ee~~|⎯<br>~~es~~<br>~~ee~~|1.5<br>~~es~~<br>~~ee~~|⎯<br>~~es~~<br>~~ee~~|||



11. For design aid only, not subject to production testing. 

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## 'nDUES.COR PORATED 

## **Typical Characteristics** 

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10 eePE T = 25°C 10V 4.5V 10 Peetpe T = 150°C TEtt, 10V  PL 5V mai<br>4.5V<br>3.5V 3.5V<br>3V 3V<br>1<br>1 2.5V<br>2.5V<br>2V<br>ry, - > in LA o — por<br>2V 0.1 >Zzaei<br>Qo | | 1.5V<br>0.1 Getm TT eHatt et =o<br>-VGS -V<br>GS<br>a eer 0.01 me<br>ee rt tk TJ Sef ee 20eee<br>0.1 1 10 0.1 1 10<br>-VDS  Drain-Source Voltage (V) -VDS  Drain-Source Voltage (V)<br>Output Characteristics Output Characteristics<br>SS 1.8<br>-V DS  = 10V VGS = -10V<br>aaeaeaeaeae 1.6 ID = -0.9A<br>1 1.4 R DS(on)<br>T = 150 ° C 1.2<br>EO Of<br>ee Mt 1.0 V GS  = V DS<br>Po )fF7fF77 A ID = -250uA<br>T = 25°C 0.8<br>0.1 Pf<br>V<br>es eeeeee GS(th)<br>(a) Ay Ay ee es es es es es es es ee ee ee<br>a ey A eeeeee ee 0.6<br>1 2 3 4 5 -50 0 50 100 150<br>-VGS  Gate-Source Voltage (V)GS  Gate-Source Voltage (V)  Gate-Source Voltage (V) Tj  Junction Temperature (°C)<br>Typical Transfer Characteristics Normalised Curves v Temperature<br>1.5V -V GS 2V 2.5V 3V T = 25°C 10<br>3.5V<br>Co, 3  ==<br>| hz, T = 150°C a wr<br>T = 25°C<br>| 4V 5V 1 SEA<br>1 LWA<br>ee ee [See] eee eea ie 0 eee| Sorees es ye ey es es<br>v= aa J<br>7V 0.1<br><r ) pf fe<br>——SSS——————— Oo 10V Sseea a SS<br>eoPrt 0.01 oeBAWAe<br>0.1 1 10 0.4 0.6 0.8 1.0 1.2 1.4<br>-ID  Drain Current (A) -VSD  Source-Drain Voltage (V)<br>On-Resistance v Drain Current Source-Drain Diode Forward Voltage<br>  Drain Current (A)   Drain Current (A)<br>D D<br>-I -I<br>GS(th)<br> and V<br>DS(on)<br>D<br>Normalised R<br>(Ω)   Reverse Drain Current (A)<br> Drain-Source On-Resistance  SD<br>DS(on) -I<br>R<br>**----- End of picture text -----**<br>


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-V DS  = 10V<br>aaeaeaeaeae<br>1<br>T = 150 ° C<br>EO Of<br>ee Mt<br>Po )fF7fF77 A<br>T = 25°C<br>0.1 Pf<br>es eeeeee<br>(a) Ay Ay ee es es es es es es es ee ee ee<br>a ey A eeeeee ee<br>1 2 3 4 5<br>-VGS  Gate-Source Voltage (V)GS  Gate-Source Voltage (V)  Gate-Source Voltage (V)<br>Typical Transfer Characteristics<br>  Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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**ZXMP6A13F** |sd 

## **Typical Characteristics –** (cont.) 

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10<br>300 V GS  = 0V<br>EL OCC<br>f = 1MHz 8<br>a ee alllll PPP rr<br>CISS<br>200 mal TTT 6 Pi Ty tT rr yy<br>7<br>crit cme) =  EEE<br>100 oeel COSS eT 4 EE HEE<br>sll -o=> 4a<br>S C RSS TE| 2 fyi ttt tt | VI DDS  = -0.9A = -30V<br>0 iiT= ee 0 ViritTitrtyl<br>0.1 1 10 0 1 2 3 4 5 6<br>-VDS - Drain - Source Voltage (V) Q - Charge (nC)<br>Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge<br>C  Capacitance (pF)<br>  Gate-Source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


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Capacitance v Drain-Source Voltage<br>**----- End of picture text -----**<br>


## **Test Circuits** 

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**ZXMP6A13F** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

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SOT23<br>A<br>Dim  Min  Max  Typ<br>A  0.37  0.51  0.40<br>B  1.20  1.40  1.30<br>B C C  2.30  2.50  2.40<br>D  0.89  1.03  0.915<br>F  0.45  0.60  0.535<br>G  1.78  2.05  1.83<br>mm san<br>H H  2.80  3.00  2.90<br>J  0.013 0.10  0.05<br>K M K  0.903 1.10  1.00<br>K1<br>K1  -  -  0.400<br>D<br>Hoe0 J F G Oe L , EE M L  0.0850.45  0.18 0.61  0.11 0.55<br>α  0°  8°  -<br>; {| [  f[ |<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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Y<br>Z<br>ata C<br>X E<br>| Rab&] EP<br>**----- End of picture text -----**<br>


|**Dimensions**<br>**Z**<br>**X**<br>**Y**<br>**C**<br>**E**|**Value(in mm)**|
|---|---|
||2.9|
||0.8|
||0.9|
||2.0|
||1.35|



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## **IMPORTANT NOTICE** 

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Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2013, Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

ZXMP6A13F Document Number DS32014 Rev. 7 - 2 

November 2013 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/ZXMP6A13FTA/power-mosfet-p-channel-60-v-11-a-04-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/zxmp6a13fta/mosfet-p-ch-60v-1-1a-sot-23/dp/4318424)
---

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