# Power MOSFET, P Channel, 60 V, 1.1 A, 0.4 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3127505/)

**URL**: https://novapart.co/products/ZXMP6A13FQTA/power-mosfet-p-channel-60-v-11-a-04-ohm-sot-23
**SKU**: ZXMP6A13FQTA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1780
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-900mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.4ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 625mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.1A |
| Drain Source On State Resistance | 0.4ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3127505/)

**ZXMP6A13FQ** ~~—~~ **60V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**Max RDS(on)**|**Max ID**<br>**TA = +25°C**|
|-60V|400mΩ@VGS= -10V|-1.1A|
||600mΩ@VGS = -4.5V|-0.9A|



## **Features** 

- Fast switching speed 

- Low input capacitance 

- Low gate charge 

- **Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description** 

This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications. 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Available** 

## **Mechanical Data** 

- Case: SOT23 

## **Applications** 

- DC - DC converters 

- Power management functions 

- Relay and solenoid driving 

- Motor control 

- Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 

- Weight: 0.008 grams (approximate) 

SOT23 

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D<br>S<br>G<br>D<br>G<br>S<br>Top View  Top View  Equivalent Circuit<br>Pin Out<br>**----- End of picture text -----**<br>


**Ordering Information** (Notes 4 & 5) 

|**Ordering Informationg Information Information**(Notes 4 & 5)Notes 4 & 5)|(Notes 4 & 5)Notes 4 & 5))||||
|---|---|---|---|---|
|**Product**|**Compliance**|**Case**|**Quantity **|**per reel**|
|ZXMP6A13FQTA|Automotive|SOT23|3,000 Units|000 Units|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable.  Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. 

   5. For packaging details, go to our website at http://www.diodes.com/products/packages.html 

## **Marking Information** 

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**----- Start of picture text -----**<br>
7P6<br>**----- End of picture text -----**<br>


7P6 = Product Type Marking Code 

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## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|-60|V|
|Gate-Source Voltage|||VGS|±20|V|
|Continuous Drain Current|VGS= 10V|(Note 7)<br>TA= +70°C     (Note 7)<br>(Note 6)|ID|-1.1<br>-0.8<br>-0.9|A|
|Pulsed Drain Current(Note 8)|||IDM|-4.0|A|
|Continuous Source Current(BodyDiode) (Note 7)|||IS|-1.2|A|
|Pulsed Source Current(BodyDiode) (Note 8)|||ISM|-4.0|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation (Note 6)<br>Linear DeratingFactor|PD|625<br>5|mW<br>mW/°C|
|Power Dissipation (Note 7)<br>Linear DeratingFactor|PD|806<br>6.5|mW<br>mW/°C|
|Thermal Resistance,Junction to Ambient(Note 6)|RθJA|200|°C/W|
|Thermal Resistance,Junction to Ambient(Note 7)|RθJA|155|°C/W|
|Thermal Resistance,Junction to Leads(Note 9)|RθJL|194|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



Notes: 6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions 

7. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs. 

9. Thermal resistance from junction to solder-point (at the end of the collector lead). 

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## Lr. 

## **Thermal Characteristics** 

**==> picture [418 x 336] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 0.7<br>R<br>DS(on) rr ee, <,  ee eee 0.6 ; [CN]<br>1 Limited SEES SE 0.5 PN<br>0.4<br>DC Co - s/<br>100m 1s 0.3<br>100ms<br>10ms 0.2<br>10m PT Single Pulse  tii UZ 1ms TINi 0.1 eae war<br>Tamb=25°C 100µs<br>0.0<br>1 10 100 0 20 40 60 80 100 120 140 160<br>-VDS  Drain-Source Voltage (V)  Temperature (°C)<br>Safe Operating Area Derating Curve<br>200 T amb =25°C Single Pulse<br>hag aUIC =  Bt T amb =25 ° C<br>150 AH I ss all h<br>Ds Fe 10 CNET! ll<br>D=0.5<br>100<br>SEY Ajman HENGE aa<br>Single Pulse<br>D=0.2<br>50 Ue”ae dain D=0.05 / TNS<br>ATS | TT 1 STINTzn<br>D=0.1<br>0<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>  Drain Current (A)<br>D<br>-I<br> Max Power Dissipation (W)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


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**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~_~~|**Symbol**<br>|**Min**<br>|**Typ**<br>|**Max**<br>|**Unit**<br>|**Test Condition**<br>|
|**OFF CHARACTERISTICS**<br>~~_~~|||||||
|Drain-Source Breakdown Voltage<br>~~_~~|BVDSS<br><br>~~a~~|-60<br><br>~~a~~|<br><br>~~a~~|<br><br>~~a~~|V<br>|ID= -250μA,VGS= 0V<br>|
|Zero Gate Voltage Drain Current<br>~~_———~~|IDSS<br>~~———~~<br>~~a~~|<br>~~———~~<br>~~a~~|<br>~~———~~<br>~~a~~|-0.5<br>~~———~~<br>~~a~~|μA<br>~~———~~|VDS= -60V,VGS= 0V<br>~~———~~|
|Gate-Source Leakage<br>~~———~~|IGSS<br>~~———~~<br>~~a~~|<br>~~———~~<br>~~a~~|<br>~~———~~<br>~~a~~|±100<br>~~———~~<br>~~a~~|nA<br>~~———~~|VGS=20V,VDS= 0V<br>~~———~~|
|**ON CHARACTERISTICS**<br>~~a~~<br>~~ff~~|||||||
|Gate Threshold Voltage<br>~~Ce~~|VGS(th)<br>~~Ce~~<br>~~f~~|-1.0<br>~~Ce~~<br>~~f~~|<br>~~Ce~~<br>~~ff~~|-3.0<br>~~Ce~~<br>~~f~~|V<br>~~Ce~~|ID= -250μA,VDS= VGS<br>~~Ce~~|
|Static Drain-Source On-Resistance (Note 10)<br>~~rr~~|RDS (ON)<br>~~f~~<br>~~rr~~|<br>~~f~~<br>~~rr~~|<br>~~ff~~<br>~~rr~~|0.4<br>~~f~~<br>~~rr~~|Ω<br>~~rr~~|VGS= -10V,ID= -0.9A<br>~~rr~~|
|||||0.6<br>~~rr~~||VGS= -4.5V,ID= -0.8A<br>~~rr~~|
|Forward Transconductance(Notes 10 and 12)<br>~~———~~|gfs<br>~~———~~|<br>~~———~~|1.8<br>~~———~~|<br>~~———~~|S<br>~~———~~|VDS= -15V,ID= -0.9A<br>~~———~~|
|Diode Forward Voltage(Note 10)<br>~~———~~<br>~~———~~<br>~~es~~|VSD<br>~~———~~|<br>~~———~~<br>~~ee~~|-0.85<br>~~———~~<br>~~ee~~|-0.95<br>~~———~~<br>~~ee~~|V<br>~~———~~<br>~~ee~~|TJ= +25°C,IS= -0.8A,VGS= 0V<br>~~———~~|
|Reverse RecoveryTime(Note 12)<br>~~———~~<br>~~es~~|trr|<br>~~ee~~|21.1<br>~~ee~~|<br>~~ee~~|ns<br>~~ee~~|TJ= +25°C, IF= -0.9A,<br>di/dt = 100A/μs|
|Reverse RecoveryCharge(Note 12)<br>~~———~~<br>~~es~~|Qrr|<br>~~ee~~|19.3<br>~~ee~~|<br>~~ee~~|nC<br>~~ee~~||
|**DYNAMIC CHARACTERISTICS** (Note 12)<br>~~———~~<br>~~es~~<br>~~ee ee~~|||||||
|Input Capacitance<br>~~Cn~~|Ciss||219||pF|VDS= -30V, VGS= 0V<br>f = 1.0MHz|
|Output Capacitance|Coss||25.7||||
|Reverse Transfer Capacitance|Crss||20.5||||
|Turn-On DelayTime(Note 11)|tD(on)||1.6||ns|VDD= -30V, ID= -1A,<br>RG 6.0ΩVGS= -10V|
|Turn-On Rise Time(Note 11)<br>~~rr~~|tr<br>~~rr~~|<br>~~rr~~|2.2<br>~~rr~~|<br>~~rr~~|||
|Turn-Off DelayTime(Note 11)<br>~~rr~~|tD(off)<br>~~rr~~|<br>~~rr~~|11.2<br>~~rr~~|<br>~~rr~~|||
|Turn-Off Fall Time(Note 11)<br>~~rr~~|tf<br>~~rr~~|<br>~~rr~~|5.7<br>~~rr~~|<br>~~rr~~|||
|Total Gate Charge (Note 11)<br>~~a~~<br>~~ee~~|Qg<br>~~ee~~|<br>~~ee~~|2.9|<br>~~eee~~|nC<br>~~eee~~|VDS= -30V, VGS= -4.5V,<br>ID= -0.9A<br>~~eee~~|
|Total Gate Charge(Note 11)<br>~~ee~~|Qg<br>~~ee~~|<br>~~ee~~|5.9|<br>~~eee~~|nC<br>~~eee~~|VDS= -30V, VGS= -10V,<br>ID= -0.9A<br>~~eee~~|
|Gate-Source Charge(Note 11)<br>~~ee~~|Qgs<br>~~ee~~|<br>~~ee~~|0.74|<br>~~eee~~|||
|Gate-Drain Charge(Note 11)<br>~~ee~~|Qgd<br>~~ee~~|<br>~~ee~~|1.5|<br>~~eee~~|||



11. Switching characteristics are independent of operating junction temperature. 

12. For design aid only, not subject to production testing 

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**ZXMP6A13FQ** 

## **Typical Characteristics** 

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**----- Start of picture text -----**<br>
10 |ee T = 25°C tt} | 10V 4.5V = 10 PtepT T = 150°C S|td 10V5V Phmal<br>4.5V<br>Se ail 3.5V ee|---|.ee etig 3.5V =—<br>:ZAee 3V | 1 |Ae OD Ss 3V<br>1 2.5V<br>2.5V<br>2V<br>r, ier ate ee as err<br>2V 0.1 >Ziel<br>Gyr Z ge tt ttt| t+ _t 4+ 4 +t 1.5V ——<br>0.1 be or<br>-V<br>a oe eae GS 00 =e -V GS an<br>5 ee ae 0.01 pee I<br>ore rt TF ee<br>0.1 1 10 0.1 1 10<br>-VDS  Drain-Source Voltage (V) -VDS  Drain-Source Voltage (V)<br>Output Characteristics Output Characteristics<br>1.8<br>a es><br>-V DS  = 10V VGS = -10V<br>Se 1.6<br>eeeea Aee ID = -0.9A<br>1 1.4 R DS(on)<br>ee Ae<br>EO T = 150 ° C ———————— 1.2<br>SO ————<br>ee 7 Ae ee 1.0 V GS  = V DS<br>a / ID = -250uA<br>0.1 T = 25°C 0.8<br>Ppa ffee ey A ereeeee ee ee V<br>a ee ee es es ee ee ee eee GS(th)<br>- —— fF -f | | 0.6<br>1 2 3 4 5 -50 0 50 100 150<br>-VGS  Gate-Source Voltage (V) Tj  Junction Temperature (°C)<br>Typical Transfer Characteristics Normalised Curves v Temperature<br>1.5V -V GS 2V 2.5V 3V T = 25°C 10<br>ee<br>Ce ee 3.5V | 6 ee<br>Ae T = 150°C ee ee ee eee<br>} ee ee or<br>T = 25°C<br>4V 5V 1 | AG<br>1<br>| a ee Ae ee ee ee ee ee eee<br>a f<br>7V 0.1<br>TY pfft<br>—rr————_———— 7) 1 0V ffSe<br>Pteee 0.01 feA e y eeee ee<br>0.1 1 10 0.4 0.6 0.8 1.0 1.2 1.4<br>-ID  Drain Current (A) -VSD  Source-Drain Voltage (V)<br>On-Resistance v Drain Current Source-Drain Diode Forward Voltage<br>  Drain Current (A)   Drain Current (A)<br>D D<br>-I -I<br>GS(th)<br> and V<br>DS(on)<br>  Drain Current (A)<br>D<br>-I<br>Normalised R<br>   Reverse Drain Current (A)<br> Drain-Source On-Resistance  SD<br>DS(on) -I<br>R<br>**----- End of picture text -----**<br>


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## BOD 

## **Typical Characteristics - continued** 

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10<br>300 V GS  = 0V<br>nePALI]el f = 1MHz 8 aa<br>CISS<br>200 ne ell ee 6 Pp pe |<br>CIC<br>A) Re<br>100 —TTL COSS 4 RHeee 4aneEH]<br>2 V DS  = -30V<br>T C RSS cnaTT TTT PyZA ET tT Tt tT I D  = -0.9A<br>0 limesTh 0 Anna<br>0.1 1 10 0 1 2 3 4 5 6<br>-VDS - Drain - Source Voltage (V) Q - Charge (nC)<br>Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge<br>C  Capacitance (pF)<br>  Gate-Source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


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Capacitance v Drain-Source Voltage<br>**----- End of picture text -----**<br>


## **Test Circuits** 

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**ZXMP6A13FQ** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

|H|||||||||||A<br>l<br>l<br> <br>7<br>°|**SOT23**<br>**Dim**<br>**Min**<br>**Max**<br>**Typ**<br>**A**<br>0.37<br>0.51<br>0.40|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|K<br>~~1~~<br>K<br>A<br>C<br>B<br>D<br>~~oe~~<br>~~a~~<br>~~tbs~~<br>~~ee~~<br>v~~e~~|||||||||J<br>M||L<br>1<br>L<br>a<br>~~UT~~|**B**<br>1.20<br>1.40<br>1.30<br>**C**<br>2.30<br>2.50<br>2.40<br>**D**<br>0.89<br>1.03<br>0.915<br>**F**<br>0.45<br>0.60<br>0.535<br>**G**<br>1.78<br>2.05<br>1.83<br>**H**<br>2.80<br>3.00<br>2.90<br>**J**<br>0.013<br>0.10<br>0.05<br>**K**<br>0.890<br>1.00<br>0.975<br>**K1**<br>0.903<br>1.10<br>1.025<br>**L**<br>0.45<br>0.61<br>0.55<br>**L1**<br>0.25<br>0.55<br>0.40<br>**M**<br>0.085 0.150<br>0.110<br>**a**<br>8°<br>**All Dimensions in mm**<br>~~ESR~~<br>~~Ft~~<br>~~———~~<br>~~oe~~<br>~~fr~~|



## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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Y<br>Z<br>ja—> C<br>X E<br>BojeRie<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**Z**|2.9|
|**X**|0.8|
|**Y**|0.9|
|**C**|2.0|
|**E**|1.35|



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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2013, Diodes Incorporated 

**www.diodes.com** 

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- [Supplier page](https://es.farnell.com/diodes-inc/zxmp6a13fqta/mosfet-aec-q101-p-ch-60v-sot-23/dp/3127505)
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