# Power MOSFET, P Channel, 40 V, 2.9 A, 0.08 ohm, SOT-26, Surface Mount

![Product image](https://novapart.co/image/farnell:3944003/)

**URL**: https://novapart.co/products/ZXMP4A57E6TA/power-mosfet-p-channel-40-v-29-a-008-ohm-sot-26
**SKU**: ZXMP4A57E6TA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2020
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.1W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-26 |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.9A |
| Drain Source On State Resistance | 0.08ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3944003/)

**ZXMP4A57E6** ae **40V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(ON)max**|**ID max**<br>**TA = +25°C**|
|-40V|80mΩ @ VGS= -10V|-3.7 A|
||150mΩ @ VGS= -4.5V|-2.8 A|



## **Features and Benefits** 

- Fast Switching Speed 

- Low Gate Drive 

- Low Input Capacitance 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description** 

This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Mechanical Data** 

- Case: SOT26 

## **Applications** 

- Motor Control 

- DC-DC Converters 

- Power Management Functions 

- Uninterrupted Power Supply 

- Case Material: Molded Plastic; UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020 

- Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e3** 

- Weight 0.018 grams (Approximate) 

SOT26 

Top View 

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D<br>| |D<br>G<br>| | is|p (a<br>S<br>Top View  Equivalent Circuit<br>Pin-Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Notes 4 & 5) 

|**Ordering Informationg Information Information**(Notes 4 & 5)|**Ordering Informationg Information Information**(Notes 4 & 5)|**Ordering Informationg Information Information**(Notes 4 & 5)|**Ordering Informationg Information Information**(Notes 4 & 5)|
|---|---|---|---|
|||||
|**Part Number**|**Compliance**|**Case**|**Quantity per reel**|
|ZXMP4A57E6TA|Standard|SOT26|3,000|
|ZXMP4A57E6QTA|Automotive|SOT26|3,000|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. 

   5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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**----- Start of picture text -----**<br>
SOT26<br>4A57 = Product Type Marking Code<br>YM = Date Code Marking<br>4A57  Y or Y = Year (ex: C = 2015)<br>M or M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2015 2016 2017 2018 2019 2020 2021 2022<br>EE Code C  D  E  F  G  H  I  J<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>ee Code 1  2  3 4  5 6 7  8 9 O N  D<br>ZXMP4A57E6 1 of 8  February 2015<br>Document Number DS35238 Rev. 3 - 2 www.diodes.com   © Diodes Incorporated<br>YM<br>**----- End of picture text -----**<br>


**ZXMP4A57E6** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-40|V|
|Gate-Source Voltage|||VGS|20|V|
|Continuous Drain Current|VGS= 10V|(Note 7)|ID|-3.7|A|
|||TA= +70°C(Note 7)||-2.9||
|||(Note 6)||-2.9||
|Pulsed Drain Current|VGS= 10V|(Note 8)|IDM|-18|A|
|Continuous Source Current (BodyDiode)||(Note 7)|IS|-2.6|A|
|Pulsed Source Current (BodyDiode)||(Note 8)|ISM|-18|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation<br>Linear Derating Factor|(Note 6)|PD|1.1<br>8.8|W<br>mW/°C|
||(Note 7)||1.7<br>13.7||
|Thermal Resistance, Junction to Ambient|(Note 6)|RθJA|113|°C/W|
||(Note 7)||73||
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



Notes: 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

7. Same as Note 4, except the device is measured at t  5 seconds. 

8. Same as Note 4, except the device is pulsed with D = 0.02 and pulse width 300µs.  The pulse current is limited by the maximum junction temperature. 

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BODimeoereoscserReaAtTE=nD 

**ZXMP4A57E6** 

## **Thermal Characteristics** 

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**----- Start of picture text -----**<br>
1.2<br>R<br>DS(ON) Pot +++ ttt ttt + +1] PTT TT PT rT cP rT cP TT TT<br>10 Limited SN 1.0 PT RET ET TET TT eT<br>= Ne ee<br>oS a Se ee ae 0.8 PT tT TAPE TT TET Tt oT<br>1<br>P| ATSANSAES UTS PT TT TNE ET<br>DC<br>1s 0.6<br>ay? : P| | | dT dT SX<br>100m 100ms SS 10ms A 0.4 PPP PrP iN rrr<br>re 1ms — oe<br>100us 0.2<br>10m See<br>SE Single Pulse, Tamb=25°C = [===:] eet [———==] 0.0 PtPPPeeetT tT TreeneT et et TIN<br>1 10 0 25 50 75 100 125 150<br>-VDS  Drain-Source Voltage (V)  Temperature (°C)<br>P-channel Safe Operating Area Derating Curve<br>  Drain Current (A)<br>D<br>-I<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


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100 PETIT TAIN TTT TTI TEIN aT<br>80 I  | Ag 7 |<br>D=0.5 aaa<br>60 ararererrr ea 7 A<br>4020 CTPWannCtnina D=0.2 ETTmH EACNLPG / ilI| D=0.05 Single Pulse ram mi UTMTTlli)<br>ee al D=0.1<br>0<br>100µ sme 1m 10m MA 100m 1 10 100 1k<br>Pulse Width (s)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


**Transient Thermal Impedance** 

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100 rei memset eee eee Single PulseT =25°C a<br>amb<br>PTI INTTTT<br>PUTT TUS IIIE EETT EI EITTI TTT<br>PT<br>10 LAIMAUTE ETTMT ETT TUT<br>SSSfered rit eerioa e otesteee ettee eed ett et|<br>CTI CeAn Cn SOC COCCC<br>I]<br>UIE ETI TTI TTD TTT TIT TIT<br>1 ee<br>Seren Sentai Seti eidea<br>100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s)<br>Pulse Power Dissipation<br>Maximum Power (W)<br>**----- End of picture text -----**<br>


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**ZXMP4A57E6** 

## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|---|
|||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**||
|**OFF CHARACTERISTICS**<br>~~eee~~<br>~~(tn~~<br>~~IIII~~<br>~~(OO~~||||||||
|Drain-Source Breakdown Voltage<br>~~nn~~|BVDSS<br>~~nn~~<br>~~(tn~~<br>~~Gd~~|-40<br>~~nn~~<br>~~II~~<br>~~(RU~~|<br>~~nn~~<br>~~I~~<br>~~(RU~~|<br>~~nn~~<br>~~I~~<br>~~(RO~~|V<br>~~nn~~<br>~~(OO~~<br>~~(OO~~|ID= -250µA, VGS= 0V<br>~~nn~~<br>~~(OO~~<br>~~(OO~~||
|Zero Gate Voltage Drain Current<br>~~nn~~|IDSS<br>~~(tn~~<br>~~nn~~<br>~~Gd~~|<br>~~II ~~<br>~~nn~~<br>~~(RU~~|<br> ~~I ~~<br>~~nn~~<br>~~(RU~~|-0.5<br> ~~I~~<br>~~nn~~<br>~~(RO~~|µA<br>~~(OO~~<br>~~nn~~<br>~~(OO~~|VDS= -40V, VGS= 0V<br>~~(OO~~<br>~~nn~~<br>~~(OO~~||
|Gate-Source Leakage|IGSS<br>~~Gd~~|<br>~~(RU~~|<br>~~(RU~~|100<br>~~(RO~~|nA<br>~~(OO~~|VGS=20V, VDS= 0V<br>~~(OO~~||
|**ON CHARACTERISTICS**<br>~~RC~~<br>~~eeeee~~||||||||
|Gate Threshold Voltage<br>~~Pee~~<br>~~eeeee~~|VGS(th)<br>~~Pee~~<br>~~ee~~|-1.0<br>~~Pee~~<br>~~ee~~|<br>~~Pee~~<br>~~ee~~|-3.0<br>~~Pee~~|V<br>~~Pee~~|ID= -250µA, VDS= VGS<br>~~Pee~~||
|Static Drain-Source On-Resistance (Note 9)<br>~~eeeee~~<br>~~i~~<br>~~Peeee~~|RDS(ON)<br>~~ee~~<br>~~i~~<br>~~ee~~|<br>~~ee~~<br>~~i~~|<br>~~ee~~<br>~~i~~|0.080<br>~~i~~|Ω<br>~~i~~<br>~~ee~~|VGS= -10V, ID= -4A<br>~~i~~||
|||<br>~~i~~<br>~~ee~~|<br>~~i~~<br>~~ee~~|0.150<br>~~i~~<br>~~ee~~||VGS= -4.5V, ID= -2A<br>~~i~~<br>~~ee~~||
|Forward Transconductance (Notes 9 & 10)<br>~~Peeee~~|gfs<br>~~ee~~|<br>~~ee~~|7.6<br>~~ee~~|<br>~~ee~~|S<br>~~ee~~|VDS= -15V, ID= -4A<br>~~ee~~||
|Diode Forward Voltage (Note 9)<br>~~Pee ee~~<br>~~ee~~|VSD<br>~~ee~~|<br>~~ee~~|-0.86<br>~~ee~~|-0.95<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~|IS= -4A, VGS= 0V<br>~~ee~~<br>~~ee~~||
|Reverse RecoveryTime (Note 10)<br>~~ee~~|trr||17.4|<br>~~ee~~|ns<br>~~ee~~|IS= -1.8A, di/dt = 100A/µs<br>~~ee~~||
|Reverse RecoveryCharge (Note 10)<br>~~ee~~|Qrr||11.1|<br>~~ee~~|nC<br>~~ee~~|||
|**DYNAMIC CHARACTERISTICS**(Note 10)<br>~~ee~~<br>~~ee~~<br>~~Pe~~||||||||
|Input Capacitance<br>~~nD~~|Ciss<br>~~nD~~|<br>~~nD~~|833<br>~~nD~~|<br>~~nD~~|pF<br>~~|~~<br>~~e~~|VDS= -20V, VGS= 0V<br>f = 1MHz<br>~~|~~<br>~~ee~~||
|Output Capacitance<br>~~a~~|Coss<br>~~a~~|<br>~~a~~|122<br>~~a~~|<br>~~a~~||||
|Reverse Transfer Capacitance<br>~~Gd~~<br>~~—<—~~|Crss<br>~~Gd~~||78|<br>~~e~~||||
|Total Gate Charge (Note 11)<br>~~Gd~~<br>~~—<—~~|Qg<br>~~Gd~~||7|<br>~~e~~|nC<br>~~|~~<br>~~e~~|VGS= -4.5V<br>~~|~~<br>~~ee~~|VDS= -20V<br>ID= -4A<br>~~e~~|
|Total Gate Charge (Note 11)<br>~~Gd~~<br>~~nD~~<br>~~—<—~~|Qg<br>~~Gd~~<br>~~nD~~|<br>~~nD~~|15.8<br>~~nD~~|<br>~~nD~~<br>~~e~~||VGS= -10V<br>~~|~~<br>~~ee~~||
|Gate-Source Charge (Note 11)<br>~~—<—~~|Qgs<br>~~Gd~~||3.6|<br>~~e~~||||
|Gate-Drain Charge (Note 11)<br>~~—<—~~<br>~~a~~|Qgd<br>~~a~~<br>~~Gd~~|<br>~~a~~|2.7<br>~~a~~|<br>~~e~~<br>~~a~~||||
|Turn-On DelayTime (Note 11)<br>~~—<—~~<br>~~nD~~|tD(on)<br>~~Gd~~<br>~~nD~~|<br>~~nD~~|2.5<br>~~nD~~|<br>~~e~~<br>~~nD~~|ns<br>~~e~~|VDD= -20V, VGS= -10V<br>ID= -1A, RG 6.0Ω<br>~~ee~~||
|Turn-On Rise Time (Note 11)<br>~~a~~|tr<br>~~a~~|<br>~~a~~|3.3<br>~~a~~|<br>~~a~~||||
|Turn-Off DelayTime (Note 11)|tD(off)<br>~~enn~~|<br>~~en~~|47<br>~~Rs ED~~|<br>~~ED~~||||
|Turn-Off Fall Time (Note 11)<br>~~nD~~|tf<br>~~nD~~<br>~~enn~~|<br>~~nD~~<br>~~en~~|21<br>~~nD~~<br>~~Rs ED~~|<br>~~nD~~<br>~~ED~~||||



10. For design aid only, not subject to production testing. 

11. Switching characteristics are independent of operating junction temperatures. 

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## **Typical Characteristics** 

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T = 25°C 10V 5V T = 150°C 10V 5V<br>10 bowiPetee|.<—_eeho 4.5V 4V | 10 puSSEE SS SF|i| 4.5V 4V3.5V ee_=<br>3.5V<br>|ee OL CC| | aao 3V —]<br>1 1<br>Ze 3V |BA<br>2.5V<br>|et eSseSS SS etSS Fasoeee<br>te HA} HH ae ert<br>0.1 re | TT TT TTT 0.1 pe | TU |<br>2.5V<br>2V<br>2Pm __ eee — 22-200 es a ee eee a<br>0.01 acal ean 11 | Gen eed | -V GS J 0.01 00 a | -V GS<br>0.1 1 10 0.1 1 10<br>-VDS  Drain-Source Voltage (V) -VDS  Drain-Source Voltage (V)<br>Output Characteristics Output Characteristics<br>1.6<br>V  = -10V<br>10 | | I GS= - 4A<br>aaETee ee 1.4 D RDS(on)<br>a ee ee eee eee<br>T = 150°C 1.2<br>1 pO T = 25°C<br>pfa ee) A OfA ee ee 1.0<br>(a A A<br>Of YY — VGS(th)<br>0.8 V  = V<br>pf V  = -10V GS DS<br>DS ID = -250uA<br>0.1 0.6<br>2 3 4 -50 0 50 100 150<br>-VGS  Gate-Source Voltage (V) Tj  Junction Temperature (°C)<br>Typical Transfer Characteristics Normalised Curves v Temperature<br>100 10<br>2.5V -V<br>GS<br>1 T = 150°C<br>3V<br>10<br>3.5V<br>petet——— 4V —F 0.1 eeEeey Ay A T = 25°C<br>1 YT[S555SSStteeTTTaeTTaeeSees Seeeeeey JSEEESa e e 4.5V  meeyi 5V | 0.01 eeaP|SSS SSSee[fieySS SSee|eeSSSeyYFSSee|SSSeeeee| ee|SSSeefteeeeeSSee<br>0.1 SS A) aie 7V |» SS ee. SS ae<br>SSS SSSS S See SS 1E-3 |i fFeee Ae ee eee eee<br>T = 25°C 10V VGS= 0V<br>0.01 aet Sas [enti] Se ee 1E-4 pf>a Aeefeee2ee {ee ee ee |<br>0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.0 1.2<br>On-Resistance v Drain Current -ID  Drain Current (A) -VSD  Source-Drain Voltage (V)<br>Source-Drain Diode Forward Voltage<br>  Drain Current (A)   Drain Current (A)<br>D D<br>-I -I<br>GS(th)<br> and V<br>DS(on)<br>  Drain Current (A)<br>D<br>-I<br>Normalised R<br><br>  Reverse Drain Current (A)<br>SD<br> Drain-Source On-Resistance  -I<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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**ZXMP4A57E6** 

## LES 

## **Typical Characteristics** (cont.) 

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10<br>1000 pe TT TT SEER<br>0 8 PE ye ETE<br>800 C<br>ISS<br>a dt POC Pe<br>6<br>600 HHH C OSS V GS  = 0V PEEP<br>Fr, SEAT f = 1MHz SSS SEo, 2eeeooee<br>4<br>400 C RSS<br>afee| POOP/ EEE I  = -4A<br>200 rree ee | aeee 2 PT Yi Tt tT Ty V D  = -20V |<br>DS<br>a ee oe PYi tT tt tt tt Yt |<br>0 PT Tr 0 ZAREEEEEEEEE a<br>0.1 1 10 0 2 4 6 8 10 12 14 16<br>-VDS - Drain - Source Voltage (V) Q - Charge (nC)<br>Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge<br>C  Capacitance (pF)<br>  Gate-Source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


## **Test Circuits** 

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**ZXMP4A57E6** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

**==> picture [350 x 138] intentionally omitted <==**

**----- Start of picture text -----**<br>
A<br>SOT26<br>Dim  Min  Max Typ<br>A  0.35 0.50 0.38<br>B C<br>B  1.50 1.70 1.60<br>C 2.70 3.00 2.80<br>oe === D    0.95<br>H  2.90 3.10 3.00<br>H al S==5 J  0.013 0.10 0.05<br>K  1.00 1.30 1.10<br>K M L  0.35 0.55 0.40<br>M  0.10 0.20 0.15<br>(Dp J Oa, ===o  0°  8°  <br>D L<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

**==> picture [123 x 105] intentionally omitted <==**

**----- Start of picture text -----**<br>
C2 C2<br>Kate<br>e G ee C1<br>Z<br>Y<br>ooo<br>X<br>**----- End of picture text -----**<br>


|**Dimensions Value**|**Dimensions Value(in mm)**|
|---|---|
|**Z**|3.20|
|**G**|1.60|
|**X**|0.55|
|**Y**|0.80|
|**C1**|2.40|
|**C2**|0.95|



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**ZXMP4A57E6** 

## **IMPORTANT NOTICE** 

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This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

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- Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

ZXMP4A57E6 Document Number DS35238 Rev. 3 - 2 

February 2015 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/ZXMP4A57E6TA/power-mosfet-p-channel-40-v-29-a-008-ohm-sot-26)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/zxmp4a57e6ta/mosfet-p-ch-40v-2-9a-sot-26/dp/3944003)
---

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