# Power MOSFET, P Channel, 40 V, 6.4 A, 0.06 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:7564945RL/)

**URL**: https://novapart.co/products/ZXMP4A16GTA/power-mosfet-p-channel-40-v-64-a-006-ohm-sot-223
**SKU**: ZXMP4A16GTA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4060
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:6.4A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-1V; Power Dissipatio

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 3.9W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6.4A |
| Drain Source On State Resistance | 0.06ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:7564945RL/)

**ZXMP4A16G** 

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Green<br>**----- End of picture text -----**<br>


## **40V P-CHANNEL ENHANCEMENT MODE MOSFET** 

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**----- Start of picture text -----**<br>
Product Summary Features and Benefits<br>BVDSS RDS(on) Max  ID  Low Input Capacitance<br>TA = +25°C   Low On-Resistance<br>60mΩ @ VGS = -10V  -6.4A   Fast Switching Speed<br>-40V   Lead-Free Finish; RoHS Compliant (Notes 1 & 2)<br>100mΩ @ VGS = -4.5V  -5.0A<br>=  Halogen and Antimony Free. “Green” Device (Note 3)<br> For automotive applications requiring specific change control<br>(i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable,<br>Description and Applications  and manufactured in IATF 16949 certified facilities), please<br>This new generation MOSFET is designed to minimize the on-state  contact us or your local Diodes representative.<br>resistance (RDS(on)) yet maintain superior switching performance,  https://www.diodes.com/quality/product-definitions/<br>making it ideal for high-efficiency power management applications.<br>**----- End of picture text -----**<br>


- DC-DC converters 

- Power management functions 

- Backlighting 

## **Mechanical Data** 

- Package: SOT223 

- Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

|||<br>|Terminals: Matte Tin Finish<br>Weight: 0.112 grams (Approximate)|Terminals: Matte Tin Finish<br>Weight: 0.112 grams (Approximate)||
|---|---|---|---|---|---|
|SOT223 (Type DN)<br>~~@~~<br>:||||**D**<br>**S**<br>**G**<br>~~@~~<br> ~~&~~||
|Top View|Pin Out - Top|||Equivalent Circuit||
|**g Information** (Note 4)|(Note 4)|||||
|||||||
|**Part Number**|**Package**|||**Packing**<br>**Qty. **<br>**Carrier**||
|ZXMP4A16GTA|SOT223(Type DN)|||1000|Tape & Reel|
|ZXMP4A16GTC|SOT223(Type DN)|||4000|Tape & Reel|



## **Ordering Information** (Note 4) 

- Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

**ZXMP 4A16** — 

ZXMP4A16 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 2 = 2022) WW or WW = Week Code (01 to 53) ~~-~~ 

1 of 7 **www.diodes.com** 

ZXMP4A16G Document number: DS33584 Rev. 6 - 2 

August 2022 ©  2022 Copyright Diodes Incorporated. All Rights Reserved. 

**ZXMP4A16G** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|-40|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current, VGS= -10V|Steady<br>State|TA= +25°C (Note 5)<br>TA= +70°C (Note 5)<br>TA= +25°C(Note 6)|ID|-6.4<br>-5.1<br>-4.6|A|
|Maximum BodyDiode Forward Current(Note 5)|||IS|-6.4|A|
|Pulsed Drain Current(Note 7)|||IDM|-21|A|
|Pulsed Source Current(Note 7)|||ISM|-21|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

||||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation<br>Linear DeratingFactor|TA= +25°C (Note 6)|PD|2.0<br>16|W<br>mW/°C|
|Total Power Dissipation<br>Linear DeratingFactor|TA= +25°C (Note 5)|PD|3.9<br>31|W<br>mW/°C|
|Thermal Resistance, Junction to Ambient|SteadyState(Note 6)|RθJA|62.5|°C/W|
||SteadyState(Note 5)||32|°C/W|
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~GD~~|**Symbol**<br>~~GD~~|**Min**<br>~~GD~~|**Typ**<br>~~GD~~|**Max**<br>~~GD~~<br>~~(OD~~|**Unit**<br>~~GD~~<br>~~(OO~~|**Test Condition**<br>~~GD~~<br>~~(OO~~|
|**OFF CHARACTERISTICS(Note 8)**<br>~~(OD(OO~~|||||||
|Drain-Source Breakdown Voltage<br>~~GO~~|BVDSS<br>~~GO~~|-40<br>~~GO~~|—<br>~~GO ~~|—<br> ~~OOO~~|V<br>~~OOO~~|VGS= 0V,ID= -250µA<br>~~OOO~~|
|Zero Gate Voltage Drain Current<br>~~ep~~|IDSS<br>~~ep~~|—<br>~~ep~~|—<br>~~ep~~|-1.0<br>~~ep~~|µA<br>~~ep~~|VDS= -40V,VGS= 0V<br>~~ep~~|
|Gate-Source Leakage<br>~~ep~~|IGSS<br>~~ep~~|—<br>~~ep~~|—<br>~~ep~~|±100<br>~~ep~~|nA<br>~~ep~~|VGS= ±20V,VDS= 0V<br>~~ep~~|
|**ON CHARACTERISTICS(Note 8)**<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(th)<br>~~ee~~|-1.0<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= -250µA<br>~~ee~~|
|Static Drain-Source On-Resistance (Note 9)<br>~~EE~~|RDS(on)<br>~~EE~~|—<br>~~EE~~|—|60|mΩ|VGS= -10V,ID= -3.8A|
|||—<br>~~EE~~|—|100||VGS= -4.5V,ID= -2.9A|
|Diode Forward Voltage(Note 9)<br>~~EE~~|VSD<br>~~EE~~|—<br>~~EE~~|-0.85|-1.2|V|VGS= 0V,IS= -3.4A|
|Forward Transconductance(Notes 9 & 10)<br>~~GG~~|gfs<br>~~GG~~|—<br>~~GG~~|8.85<br>~~GG~~|—<br>~~GG~~|S<br>~~GG~~|VDS= -15V,ID= -3.8A<br>~~GG~~|
|**DYNAMIC CHARACTERISTICS(Note 10)**<br>~~eeee~~<br>~~PO~~|||||||
|Input Capacitance<br>~~ee~~<br>~~PO~~<br>~~a~~|Ciss<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|1,007<br>~~ee~~<br>~~ee~~<br>~~-~~|—<br>~~ee~~<br>~~ee~~<br>|pF<br>~~ee~~<br>~~ee~~<br>~~ae~~|VDS= -20V, VGS= 0V<br>f = 1.0MHz<br>~~ee~~<br>~~ae~~|
|Output Capacitance<br>~~ee~~<br>~~PO~~<br>~~a~~|Coss<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|130<br>~~ee~~<br>~~ee~~<br>~~-~~|—<br>~~ee~~<br>~~ee~~<br>|||
|Reverse Transfer Capacitance<br>~~ee~~<br>~~PO~~<br>~~a~~|Crss<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|85<br>~~ee~~<br>~~ee~~<br>~~-~~|—<br>~~ee~~<br>~~ee~~<br>|||
|Total Gate Charge(VGS= -5.0V)<br>~~PO~~<br>~~===~~<br>~~a~~|Qg<br>~~ee~~<br>~~===~~|—<br>~~ee~~<br>~~===~~|13.6<br>~~ee ~~<br>~~===~~<br>~~-~~|—<br> ~~ee~~<br>~~===~~<br>|nC<br>~~ee~~<br>~~===~~<br>~~ae~~|VDS= -20V, ID= -3.8A<br>~~===~~<br>~~ae~~|
|Total Gate Charge(VGS= -10V)<br>~~===~~<br>~~a~~|Qg<br>~~===~~|—<br>~~===~~|26.1<br>~~===~~<br>~~-~~|—<br>~~===~~<br>|||
|Gate-Source Charge<br>~~===~~<br>~~a~~|Qgs<br>~~===~~|—<br>~~===~~|2.8<br>~~===~~<br>~~-~~|—<br>~~===~~<br>|||
|Gate-Drain Charge<br>~~===~~<br>~~a~~|Qgd<br>~~===~~|—<br>~~===~~|4.8<br>~~===~~<br>~~-~~|—<br>~~===~~<br>|||
|Turn-On DelayTime<br>~~a~~|tD(on)|—|2.33<br>~~-~~|—<br>|ns<br> ~~ae~~<br>~~ee~~|VGS= -10V, VDD= -20V, RG= 6.0Ω<br>ID= -1.0A<br>~~ae~~|
|Turn-On Rise Time<br>~~a~~<br>~~PO~~|tr|—|8.84<br>~~- ~~|—<br>|||
|Turn-Off DelayTime|tD(off)|—|29.18<br>~~ee~~|—<br>~~ee~~|||
|Turn-Off Fall Time|tf|—|12.54<br>~~ee~~|—<br>~~ee~~|||
|BodyDiode Reverse RecoveryTime<br>~~a~~|trr<br>~~a~~|—<br>~~a~~|27.2<br>~~a~~<br>~~ee~~|—<br>~~a~~<br>~~ee~~|ns<br>~~a~~<br>~~ee~~|IF= -3A, dI/dt = 100A/μs<br>~~a~~|
|BodyDiode Reverse RecoveryCharge<br>~~a~~|Qrr<br>~~a~~|—<br>~~a~~|25.4<br>~~a~~<br>~~ee~~|—<br>~~a~~<br>~~ee~~|nC<br>~~a~~<br>~~ee~~||



8. Short duration pulse test used to minimize self-heating effect. 

9. Measured under pulsed conditions. Width ≤ 300μs. Duty cycle ≤ 2%. 

10. Guaranteed by design. Not subject to product testing. 

2 of 7 August 2022 **www.diodes.com** ©  2022 Copyright Diodes Incorporated. All Rights Reserved. 

ZXMP4A16G Document number: DS33584 Rev. 6 - 2 

August 2022 

**ZXMP4A16G** 

## **Typical Characteristics** 

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ZXMP4A16G Document number: DS33584 Rev. 6 - 2 

August 2022 ©  2022 Copyright Diodes Incorporated. All Rights Reserved. 

**ZXMP4A16G** 

## **Typical Characteristics** (continued) 

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ZXMP4A16G Document number: DS33584 Rev. 6 - 2 

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**ZXMP4A16G** 

## **Typical Characteristics** (continued) 

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ZXMP4A16G Document number: DS33584 Rev. 6 - 2 

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**ZXMP4A16G** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT223 (Type DN)** 

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**----- Start of picture text -----**<br>
D<br>b2<br>C<br>Ei a<br>E1 E<br>Gauge<br>Plane<br>0.25<br>Seating L<br>Plane<br>e b<br>e1<br>A A1<br>A2<br>—<br>Suggested Pad Layout<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>**----- End of picture text -----**<br>


|**SOT223(Type DN)**<br>~~—~~|**SOT223(Type DN)**<br>~~—~~|**SOT223(Type DN)**<br>~~—~~|**SOT223(Type DN)**<br>~~—~~|
|---|---|---|---|
|**Dim**<br>~~—~~|**Min**<br>~~—~~|**Max**<br>~~—~~|**Typ**<br>~~—~~|
|**A**<br>~~—~~|--<br>~~—~~|1.70<br>~~—~~|--<br>~~—~~|
|**A1**|0.01|0.15|--|
|**A2**|1.50|1.68|1.60|
|**b**|0.60|0.80|0.70|
|**b2**<br>**c**|2.90<br>0.20|3.10<br>032|--|
|**c**|0.20|0.32|--|
|**D**|6.30|6.70|--|
|**E**|6.70|7.30|--|
|**E1**|3.30|3.70|--|
|**e**|--|--|2.30|
|**e1**|--|--|4.60|
|**L**|0.85|--|--|
|**All Dimensions in mm**||||



## **SOT223 (Type DN)** 

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**----- Start of picture text -----**<br>
X1<br>Y1<br>C1 Y2<br>Y<br>oo. X C<br>**----- End of picture text -----**<br>


**==> picture [105 x 76] intentionally omitted <==**

**----- Start of picture text -----**<br>
Dimensions Value (in mm)<br>C 2.30<br>C1  6.40<br>X  1.20<br>X1  3.30<br>Y  1.60<br>Y1  1.60<br>Y2  8.00<br>**----- End of picture text -----**<br>


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ZXMP4A16G Document number: DS33584 Rev. 6 - 2 

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**ZXMP4A16G** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes’ products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes’ products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes’ products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 9. This Notice may be periodically updated with the most recent version available at https://www.diodes.com/about/company/terms-andconditions/important-notice 

DIODES is a trademark of Diodes Incorporated in the United States and other countries. The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries. ©  2022 Diodes Incorporated. All Rights Reserved. 

**www.diodes.com** 

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## Links

- [View this product on Novapart](https://novapart.co/products/ZXMP4A16GTA/power-mosfet-p-channel-40-v-64-a-006-ohm-sot-223)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/zxmp4a16gta/mosfet-p-sot-223/dp/7564945RL)
---

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