# Power MOSFET, Low Voltage, P Channel, 30 V, 1.6 A, 0.21 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:7564937RL/)

**URL**: https://novapart.co/products/ZXMP3A13FTA/power-mosfet-low-voltage-p-channel-30-v-16-a-021
**SKU**: ZXMP3A13FTA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2360
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.21ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-1V; Power Dissipation

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 806mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.6A |
| Drain Source On State Resistance | 0.21ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:7564937RL/)

**ZXMP3A13F** 

**30V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|---|
|**V(BR)DSS**<br>**Max RDS(ON)**<br>**Package**<br>**Max ID **<br>**TA = +25°C**<br>-30V<br>0.21Ω @ VGS= -10V<br>SOT23<br>-1.6A<br>0.33Ω @ VGS= -4.5V<br>-1.1A||||
|**V(BR)DSS**|**Max RDS(ON)**|**Package**|**Max ID **<br>**TA = +25°C**|
|-30V|0.21Ω @ VGS= -10V|SOT23|-1.6A|
||0.33Ω @ VGS= -4.5V||-1.1A|



## **Features** 

- Low On-Resistance 

- Fast Switching Speed 

- Low Threshold 

- Low Gate Drive 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description** 

This new generation of trench MOSFETs utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, and power management applications. 

## **Applications** 

- DC-DC Converters 

## **Mechanical Data** 

   - Case: SOT23 

   - Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Matte Tin Finish Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 

   - Weight: 0.008 grams (Approximate) 

- Power Management Functions 

- Disconnect Switches 

- Motor Control 

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Top View 

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D<br>S<br>G<br>D<br>G &<br>S<br>Top View  Equivalent Circuit<br>Pin Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|
|---|---|---|---|
|**Part Number**<br>**Compliance**<br>**Case**<br>**Quantity per Reel**<br>ZXMP3A13FTA<br>Standard<br>SOT23<br>3,000<br>ZXMP3A13FTC<br>Standard<br>SOT23<br>10,000||||
|**Part Number**|**Compliance**|**Case**|**Quantity per Reel**|
|ZXMP3A13FTA|Standard|SOT23|3,000|
|ZXMP3A13FTC|Standard|SOT23|10,000|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free. 

   3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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313 = Product Type Marking Code 

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ZXMP3A13F Document number: DS33573 Rev. 2 - 2 

October 2015 © Diodes Incorporated 

**ZXMP3A13F** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|-30|V|
|Gate-Source Voltage|||VGS|±20|V|
|Continuous Drain Current|VGS= 10V|(Note 6)<br>TA= +70°C     (Note 6)<br>(Note 5)|(Note 6)<br>= +70°C     (Note 6)<br>ID|-1.6<br>-1.3<br>-1.4|A|
|Pulsed Drain Current(Note 7)|||IDM|-6|A|
|Continuous Source Current(BodyDiode) (Note 6)|||IS|-1.2|A|
|Pulsed Source Current(BodyDiode) (Note 7)|||ISM|-6|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation (Note 5)<br>Linear DeratingFactor|PD|625<br>5|mW<br>mW/°C|
|Power Dissipation (Note 6)<br>Linear DeratingFactor|PD|806<br>6.4|mW<br>mW/°C|
|Thermal Resistance,Junction to Ambient(Note 5)|RθJA|200|°C/W|
|Thermal Resistance,Junction to Ambient(Note 6)|RθJA|155|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions 

6. For a device surface mounted on FR4 PCB measured at t ≤5 secs. 

7. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10μs - pulse current limited by maximum junction temperature. 

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**ZXMP3A13F** 

**Thermal Characteristics** 

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**ZXMP3A13F** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~——~~|**Symbol**<br>~~——~~|**Min**<br>~~——~~|**Typ**<br>~~——~~|**Max**<br>~~——~~|**Unit**<br>~~——~~|**Test Condition**<br>~~——~~|
|**OFF CHARACTERISTICS**<br>~~——~~|||||||
|Drain-Source Breakdown Voltage<br>~~——~~|BVDSS<br>~~——~~|-30<br>~~——~~|<br>~~——~~|<br>~~——~~|V<br>~~——~~|ID= -250µA,VGS= 0V<br>~~——~~|
|Zero Gate Voltage Drain Current<br>~~——~~|IDSS<br>~~——~~|<br>~~——~~|<br>~~——~~|-0.5<br>~~——~~|µA<br>~~——~~|VDS= -30V,VGS= 0V<br>~~——~~|
|Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|±100<br>~~ee~~|nA<br>~~ee~~|VGS=20V,VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS**<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(th)<br>~~ee~~|-1.0<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|V<br>~~ee~~|ID= -250µA,VDS= VGS<br>~~ee~~|
|Static Drain-Source On-Resistance (Note 8)<br>~~Ee~~|RDS(ON)<br>~~Ee~~|<br>~~Ee~~|<br>~~Ee~~|0.21<br>~~Ee~~|Ω<br>~~Ee~~|VGS= -10V,ID= -1.4A<br>~~Ee~~|
|||||0.33<br>~~Ee~~||VGS= -4.5V,ID= -1.1A<br>~~Ee~~|
|Forward Transconductance(Notes 8 & 10)<br>~~Ee~~|gfs<br>~~Ee~~|<br>~~Ee~~|2.4<br>~~Ee~~|<br>~~Ee~~|S<br>~~Ee~~|VDS= -15V,ID= -1.4A<br>~~Ee~~|
|**DYNAMIC CHARACTERISTICS** (Note 10)<br>~~aoeeee~~<br>~~ne~~|||||||
|Input Capacitance<br>~~—————~~|Ciss<br>~~—————~~<br>~~a~~|<br>~~—————~~<br>~~oe~~|206<br>~~—————~~<br>~~eee~~|<br>~~—————~~<br>~~eee~~|pF<br>~~—————~~|VDS= -15V, VGS= 0V<br>f = 1.0MHz<br>~~—————~~<br>~~ne~~|
|Output Capacitance<br>~~—————~~|Coss<br>~~—————~~<br>~~a~~|<br>~~—————~~<br>~~oe~~|59.3<br>~~—————~~<br>~~eee~~|<br>~~—————~~<br>~~eee~~|||
|Reverse Transfer Capacitance<br>~~—————~~|Crss<br>~~—————~~<br>~~a~~|<br>~~—————~~<br>~~oe~~|49.2<br>~~—————~~<br>~~eee~~|<br>~~—————~~<br>~~eee~~|||
|**SWITCHING** (Notes 9 & 10)<br>~~a oe eee~~<br>~~ne~~<br>~~————~~<br>~~ee~~|||||||
|Turn-On DelayTime<br>~~————~~|td(ON)||1.5|<br>~~ee~~|nS<br>~~ee~~|VDD= -15V, ID= -1.0A,<br>RG 6.0ΩVGS= -10V<br>~~ee~~|
|Rise Time<br>~~————~~|tR||3.0|<br>~~ee~~|||
|Turn-Off DelayTime<br>~~————~~|tD(OFF)||11.1|<br>~~ee~~|||
|Fall Time<br>~~————~~|tf||7.6|<br>~~ee~~|||
|Gate Charge<br>~~————~~<br>~~ft~~|Qg<br>~~ft~~|<br>~~ft~~|3.8<br>~~ft~~|<br>~~ee~~<br>~~ft~~|nC<br>~~ee~~<br>~~ft~~|VDS= -15V, VGS= -5.0V,<br>ID= -1.4A<br>~~ee~~<br>~~ft~~<br>~~ee~~|
|Total Gate Charge<br>~~ft~~<br>~~a~~|Qg<br>~~ft~~<br>~~a~~|<br>~~ft~~<br>~~a~~|6.4<br>~~ft~~<br>~~a~~|<br>~~ft~~<br>~~a~~|nC<br>~~ft~~<br>~~a~~|VDS= -15V, VGS= -10V,<br>ID= -1.4A<br>~~ft~~<br>~~a~~<br>~~ee~~|
|Gate-Source Charge<br>~~a~~|Qgs<br>~~a~~|<br>~~a~~|0.69<br>~~a~~|<br>~~a~~|||
|Gate-Drain Charge<br>~~a~~|Qgd<br>~~a~~|<br>~~a~~|2.0<br>~~a~~|<br>~~a~~|||
|**SOURCE-DRAIN DIODE**<br>~~ee~~<br>~~————~~|||||||
|Diode Forward Voltage(Note 8)<br>~~————~~|VSD<br>~~————~~|<br>~~————~~|-0.85<br>~~————~~|-0.95<br>~~————~~|V<br>~~————~~|TJ= +25°C,IS= -1.1A,VGS= 0V<br>~~————~~|
|Reverse RecoveryTime(Note 10)<br>~~————~~<br>~~On~~|tRR<br>~~————~~<br>~~On~~|<br>~~————~~<br>~~On~~|15.6<br>~~————~~<br>~~On~~|<br>~~————~~<br>~~On~~|nS<br>~~————~~<br>~~On~~|TJ= +25°C, IF= -0.95A,<br>di/dt = 100A/µs<br>~~————~~<br>~~On~~|
|Reverse RecoveryCharge(Note 10)<br>~~On~~|QRR<br>~~On~~|<br>~~On~~|9.6<br>~~On~~|<br>~~On~~|nC<br>~~On~~||



10. For design aid only, not subject to production testing. 

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**ZXMP3A13F** 

## **Typical Characteristics** 

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**ZXMP3A13F** 

## **Typical Characteristics** (Continued) 

## **Test Circuits** 

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**ZXMP3A13F** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

## **SOT23** 

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All 7°<br>**----- End of picture text -----**<br>


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H SOT23<br>GAUGE PLANE Dim  Min  Max  Typ<br>0.25 A  0.37  0.51  0.40<br>K1 K J B  1.20 1.40 1.30<br>C  2.30  2.50  2.40<br>D  0.89  1.03  0.915<br>a F  0.45  0.60  0.535<br>A M G  1.78  2.05  1.83<br>oh sah L L1 | a H  2.80  3.00  2.90<br>J  0.013  0.10  0.05<br>K  0.890  1.00  0.975<br>K1  0.903  1.10  1.025<br>(i ---- BEBE<br>C B L  0.45 0.61  0.55<br>L1  0.25 0.55 0.40<br>FS a<br>M  0.085 0.150 0.110<br>a 8°<br>== oees<br>D All Dimensions in mm<br>F G<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

**SOT23** 

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Y<br>Z<br>TE C<br>X E<br>| ahBic e<br>**----- End of picture text -----**<br>


|**Dimensions Value**|**Dimensions Value(in mm)**|
|---|---|
|**Z**|2.9|
|**X**|0.8|
|**Y**|0.9|
|**C**|2.0|
|**E**|1.35|



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**ZXMP3A13F** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

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