# Power MOSFET, Enhancement Mode, P Channel, 100 V, 2.6 A, 0.15 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2061509/)

**URL**: https://novapart.co/products/ZXMP10A18GTA/power-mosfet-enhancement-mode-p-channel-100-v-26-a
**SKU**: ZXMP10A18GTA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7330
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-2.6A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.6A |
| Drain Source On State Resistance | 0.15ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2061509/)

**Green** ~~©,~~ 

**ZXMP10A18G** [_ 

**100V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(on)max**|**ID max**<br>**TA = +25°C**|
|-100V|150mΩ @ VGS= -10V|-3.7A|
||190mΩ @ VGS= -6V|-3.3A|



## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for highefficiency power management applications. 

## **Features and Benefits** 

- Low On-Resistance 

- Fast Switching Speed 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at** 

   - 

   - **https://www.diodes.com/products/automotive/automotive products/.** 

- **This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.** 

**https://www.diodes.com/quality/product-definitions/** 

- Motor controls 

- DC-DC converters 

- Power management functions 

- Relay and solenoid driving 

## **Mechanical Data** 

- Package: SOT223 (Type DN) 

- Package Material: Molded Plastic, UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020 

- Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208 **e3** 

- Weight: 0.112 grams (Approximate) 

SOT223 (Type DN) 

Top View 

Pin Out - Top View 

**==> picture [52 x 86] intentionally omitted <==**

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Equivalent Circuit 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|
|---|---|---|---|---|
||||||
|**Product**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|ZXMP10A18GTA|ZXMP10A18|7|12|1,000|



Notes: 

1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/ 

## **Marking Information** 

SOT223 (Type DN) 

ZXMP10A18 =Product Type Marking Code YWW = Date Code Marking Y or Y= Last Digit of Year (ex: 2 = 2022) : WW or WW = Week Code (01 - 53) 

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ZXMP10A18G Document number: DS33598 Rev. 4 - 2 

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**ZXMP10A18G** 

## **Maximum Ratings** (@TA = +25°C unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-100|V|
|Gate-Source Voltage|||VGSS|20|V|
|Continuous Drain Current|VGS= 10V|(Note 6)|ID|-3.7|A|
|||TA= +70°C(Note 6)||-3.0||
|||(Note 5)||-2.6||
|Pulsed Drain Current|VGS= 10V|(Note 7)|IDM|-16.5|A|
|Continuous Source Current(Bodydiode)||(Note 6)|IS|-3.7|A|
|Pulsed Source Current(Bodydiode)||(Note 7)|ISM|-16.5|A|



## **Thermal Characteristics** (@TA = +25°C unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation<br>Linear Derating Factor|(Note 5)|PD|2.0<br>16|W<br>mW/°C|
||(Note 6)||3.9<br>31||
|Thermal Resistance, Junction to Ambient|(Note 5)|RJA|62.5|°C/W|
||(Note 6)||32.2||
|Thermal Resistance,Junction to Lead|(Note 8)|RJL|7.65||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to 150|°C|



Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

6. Same as Note 5, except the device is measured at t  10 seconds. 

7. Same as Note 5, except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature. 

8. Thermal resistance from junction to solder-point (at the end of the drain lead). 

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**ZXMP10A18G** [| 

## **Thermal Characteristics** 

**==> picture [466 x 364] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 RDS(on) 2.0<br>Limited<br>| eSa \<br>1 PtrNSNSOS PRT [ONS] SH || 1.6 N\A<br>LLIN ATISA TNT 1.2 N<br>DC<br>Cn 1s a<br>YT TT 100ms Aa | 0.8 IN<br>100m<br>10ms<br>Be| Single Pulse Pt TT 1ms 100µs YSLT I 0.4 IN N<br>T = 25° C<br>10m | amb PT TT 0.0 N\<br>1 10 100 0 20 40 60 80 100 120 140 160<br>-VDS  Drain-Source Voltage (V)  Temperature (° C)<br>Safe Operating Area Derating Curve<br>70<br>Z oo Sense<br>T = 25° C<br>60 a amb FCT ANCE In 8 Single Pulse Hil<br>T = 25° C<br>100 amb<br>50 CH Ho TT TTT oll<br>AA<br>40 allA 8  wh  | HEH| GEE HaPht<br>D= 0.5 Lemne PTI TTT TTT TTT TTT TTT)<br>30 itote | eaeti) TTT LTT4 SE STIN TT TT<br>Cl 10 TTI TEIN T IMINO TUTTE [TTI]<br>20 D= 0.2 aAHl LLSt!t LetvlZa Single Pulse HIlll SoeeSPTteresaTSemetic<br>10 TT |  LS |III D= 0.05 1 | a<br>e eeeseeerircaala D= 0.1 vimatill 00<br>0 eee eT CCl ull CTU CTU 1 TIVITYTTT CUT I CET TT<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>  Drain Current (A)<br>D<br>-I<br> Max Power Dissipation (W)<br>Thermal Resistance (° C/W)  Maximum Power (W)<br>**----- End of picture text -----**<br>


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ZXMP10A18G Document number: DS33598 Rev. 4 - 2 

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**ZXMP10A18G** 

## **Electrical Characteristics** (@TA = +25°C unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS**|||||||
|Drain-Source Breakdown Voltage|BVDSS|-100|||V|ID= -250µA,VGS= 0V|
|Zero Gate Voltage Drain Current|IDSS|||-1|µA|VDS= -100V,VGS= 0V|
|Gate-Source Leakage|IGSS|||100|nA|VGS=20V,VDS= 0V|
|**ON CHARACTERISTICS**|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(th)<br>~~ee~~|-2.0<br>~~ee~~|<br>~~ee~~|-4.0<br>~~ee~~|V<br>~~ee~~|ID= -250µA,VDS= VGS<br>~~ee~~|
|Static Drain-Source On-Resistance (Note 9)<br>~~ee~~|RDS(on)<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|150<br>~~ee~~|mΩ<br>~~ee~~|VGS= -10V,ID= -2.8A<br>~~ee~~|
|||||190<br>~~ee~~||VGS= -6V,ID= -2.4A<br>~~ee~~|
|Forward Transconductance(Notes 9 & 10)<br>~~ee~~|gfs<br>~~ee~~<br>~~se~~|<br>~~ee~~<br>~~se~~|6.0<br>~~ee~~<br>~~se~~|<br>~~ee~~<br>~~a~~|S<br>~~ee~~<br>~~a~~|VDS= -15V,ID= -2.8A<br>~~ee~~|
|Diode Forward Voltage(Note 9)<br>~~——————~~|VSD<br>~~——————~~<br>~~se~~|<br>~~——————~~<br>~~se~~|-0.85<br>~~——————~~<br>~~se~~|-0.95<br>~~——————~~<br>~~a~~|V<br>~~——————~~<br>~~a~~|IS= -3.5A,VGS= 0V,TJ= +25°C<br>~~——————~~|
|Reverse RecoveryTime(Note 10)<br>~~——————~~|trr<br>~~——————~~<br>~~se~~|~~——————~~<br>~~se~~|49<br>~~——————~~<br>~~se~~|<br>~~——————~~<br>~~a~~|ns<br>~~——————~~<br>~~a~~|IS= -2.8A, di/dt = 100A/µs,<br>TJ= +25°C<br>~~——————~~|
|Reverse RecoveryCharge(Note 10)<br>~~——————~~|Qrr<br>~~——————~~<br>~~se~~|<br>~~——————~~<br>~~se~~|107<br>~~——————~~<br>~~se~~|<br>~~——————~~<br>~~a~~|nC<br>~~——————~~<br>~~a~~||
|**DYNAMIC CHARACTERISTICS(Note 10)**<br>~~se a~~|||||||
|Input Capacitance|Ciss||1055||pF|VDD= -50V, VGS= 0V<br>f = 1MHz|
|Output Capacitance|Coss||90||pF||
|Reverse Transfer Capacitance|Crss||76||pF||
|Total Gate Charge(Note 11)|Qg||26.9||nC|VGS= -10V, VDS= -50V<br>ID= -2.8A|
|Gate-Source Charge(Note 11)<br>~~a~~|Qgs<br>~~O~~||3.9||nC||
|Gate-Drain Charge(Note 11)<br>~~a~~|Qgd<br>~~O~~||10.2||nC||
|Turn-On DelayTime(Note 11)<br>~~a~~|tD(on)<br>~~O~~||4.6||ns|VDD= -50V, VGS= -10V<br>ID= -1A, RG 6.0Ω|
|Turn-On Rise Time(Note 11)|tr||6.8||ns||
|Turn-Off DelayTime(Note 11)|tD(off)||33.9||ns||
|Turn-Off Fall Time(Note 11)|tf||17.9||ns||



- Notes: 9. Measured under pulsed conditions. Pulse width  300s; duty cycle  2% 

   10. For design aid only, not subject to production testing. 

   11. Switching characteristics are independent of operating junction temperatures. 

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[| 

**ZXMP10A18G** 

## **Typical Characteristics** 

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**----- Start of picture text -----**<br>
T = 25°C 10V<br>10<br>5V<br>i ——_=- _< eee 4.5V<br>1 4V<br>-VGS<br>0.1 |<br>3.5V<br>a |<br>0.01 Die<br>0.1 1 10<br>-VDS  Drain-Source Voltage (V)<br>  Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


## **Output Characteristics** 

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**----- Start of picture text -----**<br>
T = 150°C 10V<br>10 5V<br>SSeS Sarr eee<br>4.5V<br>4V<br>1<br>3.5V<br>JO | — |<br>0.1<br>3V<br>ettth ——Ce ee -VGS<br>0.1 1 10<br>-VDS  Drain-Source Voltage (V)<br>  Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


## **Output Characteristics** 

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**----- Start of picture text -----**<br>
Eeee<br>ee es en ae<br>T = 150°C<br>a<br>T = 25°C<br>1 | LOAn<br>—__—_———_—_——rs a) ey 4 =es ———S=—=<br>Ponya”ti(“(CMY ACODA AAe ee ee<br>-VDS = 10V<br>0.1<br>3 4 5<br>-VGS  Gate-Source Voltage (V)<br>  Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


## **Typical Transfer Characteristics** 

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**----- Start of picture text -----**<br>
1.8<br>VGS = -10V<br>1.6 ID = - 2.8A<br>R<br>1.4 DS(on)<br>1.2<br>1.0 V<br>GS(th)<br>0.8 V GS  = V DS<br>ID = -250uA<br>0.6<br>-50 0 50 100 150<br>Tj  Junction Temperature (°C)<br>GS(th)<br> and V<br>DS(on)<br>Normalised R<br>**----- End of picture text -----**<br>


## **Normalised Curves v Temperature** 

**==> picture [456 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 3.5V -VGS T = 25°C 10<br>at ed | ff T = 150°C aS =<br>4V 1<br>Sep A reer ec ae PET ATA<br>10 T = 25°C<br>EL TAUtyTt 4.5V ———_—_—_—_<br>AC 5V Feo 0.1 SS<br>1<br>ell eS<br>Ee 0.01 Ene Ae eee eee<br>Eyee TTiidou.6hUhTUhTTtTSTSCSSCésd | | UA CS 10V SSSSSa SSS2 ESEEE SSSSS SSFSESS ESSeeSSS eee<br>0.1<br>1E-3<br>0.1 1 10 0.2 0.4 0.6 0.8 1.0<br>-ID  Drain Current (A) -VSD  Source-Drain Voltage (V)<br>On-Resistance v Drain Current Source-Drain Diode Forward Voltage<br><br>  Reverse Drain Current (A)<br> Drain-Source On-Resistance  SD<br>DS(on) -I<br>R<br>**----- End of picture text -----**<br>


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ZXMP10A18G Document number: DS33598 Rev. 4 - 2 

February 2022 © Diodes Incorporated 

[| 

**ZXMP10A18G** 

## **Typical Characteristics** (continued) 

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**----- Start of picture text -----**<br>
1800 10<br>1600 V GS = 0V ID = -2.8A<br>1400 llLT f = 1MHz Hill 8 fn We<br>1200 FAIRS uti EERE<br>1000 ma CISS SS 6 PTT P A tT<br>800 HH COSS rrp ECR etree<br>4<br>600 CRSS<br>400 SOTee THT 2 PLAVEELEEE EEEEEE EEEEEE EEE<br>2000 PTTIPSRa  eTiea TTSl 0 VATVT TE VDS = -50V TT LT<br>0.1 1 10 100 0 2 4 6 8 10 12 14 16 18 20 22 24 26<br>-VDS - Drain - Source Voltage (V) Q - Charge (nC)<br>Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge<br>C  Capacitance (pF)<br>  Gate-Source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


**==> picture [187 x 12] intentionally omitted <==**

**----- Start of picture text -----**<br>
Capacitance v Drain-Source Voltage<br>**----- End of picture text -----**<br>


## **Test Circuits** 

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ZXMP10A18G Document number: DS33598 Rev. 4 - 2 

February 2022 © Diodes Incorporated 

**ZXMP10A18G** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT223 (Type DN)** 

**==> picture [482 x 310] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>b2<br>C<br>SOT223 (Type DN)<br>Es] F — Dim Min Max Typ<br>A  --  1.70 --<br>E1 E A1  0.01  0.15 --<br>A2  1.50 1.68 1.60<br>b  0.60  0.80  0.70<br>Gauge<br>Plane b2  2.90  3.10  --<br>0.25 c  0.20  0.32  --<br>A OE Seating a L tt D  6.30  6.70  --<br>Plane E  6.70  7.30  --<br>e b E1  3.30  3.70  --<br>e  --  --  2.30<br>e1 e1  --  --  4.60<br>——— L  0.85 --  --<br>All Dimensions in mm<br>A A1<br>|<br>A2<br>in<br>Suggested Pad Layout<br>**----- End of picture text -----**<br>


Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT223 (Type DN)** 

**==> picture [154 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
X1<br>Y1<br>C1 Y2<br>Y<br>au X a C<br>**----- End of picture text -----**<br>


**==> picture [106 x 75] intentionally omitted <==**

**----- Start of picture text -----**<br>
Dimensions Value (in mm)<br>C 2.30<br>C1  6.40<br>X  1.20<br>X1  3.30<br>Y  1.60<br>Y1  1.60<br>Y2  8.00<br>**----- End of picture text -----**<br>


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ZXMP10A18G Document number: DS33598 Rev. 4 - 2 

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**ZXMP10A18G** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/)  or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2022 Diodes Incorporated 

**www.diodes.com** 

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February 2022 © Diodes Incorporated 



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---

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