# Power MOSFET, P Channel, 100 V, 1.7 A, 0.35 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:3943996/)

**URL**: https://novapart.co/products/ZXMP10A17GQTA/power-mosfet-p-channel-100-v-17-a-035-ohm-sot-223
**SKU**: ZXMP10A17GQTA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3880
**Stock**: 500+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.7A |
| Drain Source On State Resistance | 0.35ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943996/)

**ZXMP10A17GQ** ~~>~~ 

## **100V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON)**max|**ID**<br>**TA = +25°C**|
|-100V|350mΩ @ VGS= -10V|-2.4A|
||450mΩ @ VGS= -6V|-2.1A|



## **Features and Benefits** 

- Fast Switching Speed 

- Low Input Capacitance 

- Low Gate Drive 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Description and Applications** 

This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Mechanical Data** 

   - Case: SOT223 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity:  Level 1 per J-STD-020 

- Motor Control 

- DC-DC Converters 

- Power Management Functions 

   - Terminals: Finish - Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 

   - Weight: 0.112 grams (Approximate) 

- Relay and Solenoid Driving 

SOT223 

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Pin Out - Top View 

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## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|ZXMP10A17GQTA|SOT223|1,000/Tape & Reel|
|ZXMP10A17GQTC|SOT223|4,000/Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 

   5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

SOT223 

ZXMP 10A17 

ZXMP10A17 = Product Type Marking Code YWW = Date Code Marking Y = Year (ex: 7 = 2017) WW = Week (01 to 53) 

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## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-100|V|
|Gate-Source Voltage|||VGS|20|V|
|Continuous Drain Current|VGS= -10V|(Note 7)|ID|-2.4|A|
|||TA= +70°C(Note 7)||-1.9||
|||(Note 6)||-1.7||
|Pulsed Drain Current|VGS = -10V|(Note 8)|IDM|-9.4|A|
|Continuous Source Current(BodyDiode)||(Note 7)|IS|-4.5|A|
|Pulsed Source Current(BodyDiode)||(Note 8)|ISM|-9.4|A|



**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation<br>Linear Derating Factor|(Note 6)|PD|2.0<br>16|W<br>mW/°C|
||(Note 7)||3.9<br>31||
|Thermal Resistance, Junction to Ambient|(Note 6)|RJA|62.5|°C/W|
||(Note7)||32.0||
|Thermal Resistance,Junction to Case|(Note 6)|RJC|7.7||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|
|---|---|---|---|---|---|---|---|
|**Characteristic**<br>~~|~~<br>~~ee~~|**Symbol**<br>~~|~~<br>~~ee~~|**Min**<br>~~|~~<br>~~ee er~~|**Typ**<br>~~|~~<br>~~er~~|**Max**<br>~~|~~<br>~~er~~|**Unit**<br>~~|~~<br>~~ereee~~|**Test Condition**<br>~~|~~<br>~~eee XC~~||
|**OFF CHARACTERISTICS**<br>~~ee ereee XC~~||||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|-100<br>~~ee er~~|<br>~~er~~|<br>~~er~~|V<br>~~ereee~~|ID= -250µA, VGS= 0V<br>~~eee XC~~||
|Zero Gate Voltage Drain Current<br>~~ee~~|IDSS<br>~~ee~~|<br>~~ee er~~|<br>~~er~~|-0.5<br>~~er~~|µA<br>~~er eee~~|VDS= -100V, VGS= 0V<br>~~eee XC~~||
|Gate-Source Leakage<br>~~ye~~|IGSS<br>~~e~~|<br>~~eee~~|<br>~~ee~~|100<br>~~tr~~|nA<br>~~tr~~|VGS=20V, VDS= 0V<br>~~trKX~~||
|**ON CHARACTERISTICS**<br>~~yeee~~<br>~~trKX~~||||||||
|Gate Threshold Voltage<br>~~ye~~<br>~~ee~~|VGS(TH)<br>~~e~~<br>~~ee~~|-2.0<br>~~eee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|-4.0<br>~~tr~~<br>~~ee~~|V<br>~~tr~~<br>~~ee~~|ID= -250µA, VDS= VGS<br>~~trKX~~<br>~~ee~~||
|Static Drain-Source On-Resistance (Note 9)<br>~~ye~~<br>~~ee~~<br>~~a~~|RDS(ON)<br>~~e~~<br>~~ee~~|<br>~~e ee~~<br>~~ee~~<br>~~GG~~|<br>~~ee~~<br>~~ee~~<br>~~GG~~|0.350<br>~~tr~~<br>~~ee~~|Ω<br>~~tr~~<br>~~ee~~<br>~~GO~~|VGS= -10V, ID= -1.4A<br>~~tr KX~~<br>~~ee~~||
|||||0.450<br>~~ee~~<br>~~GG~~||VGS= -6V, ID= -1.2A<br>~~ee~~<br>~~(OO~~||
|Forward Transconductance (Notes 9 & 10)<br>~~a~~|gfs|<br>~~GG~~|2.8<br>~~GG~~|<br>~~GG~~|S<br>~~GO~~|VDS= -15V, ID= -1.4A<br>~~(OO~~||
|Diode Forward Voltage (Note 9)<br>~~a~~|VSD|<br>~~GG~~|-0.85<br>~~GG~~|-0.95<br>~~GG~~|V<br>~~GO ~~|IS= -1.7A, VGS= 0V<br> ~~(OO~~||
|Reverse RecoveryTime (Note 10)|tRR||33||ns|IF= -1.5A, di/dt = 100A/µs||
|Reverse RecoveryCharge (Note 10)<br>~~a~~|QRR<br>~~a~~|<br>~~a~~|48<br>~~a~~|<br>~~a~~|nC<br>~~a~~|||
|**DYNAMIC CHARACTERISTICS**(Note 10)<br>~~eeee~~||||||||
|Input Capacitance<br>~~a~~<br>~~ee~~|Ciss<br>~~a~~<br>~~ee~~|<br>~~a~~<br>~~ee~~|424<br>~~a~~<br>~~ee~~|<br>~~a~~<br>~~ee~~|pF<br>~~a~~<br>~~ee~~|VDS= -50V, VGS= 0V<br>f = 1MHz<br>~~ee~~<br>~~ae~~||
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|<br>~~ee~~|36.6<br>~~ee~~|<br>~~ee~~|pF<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~ee~~<br>~~——_~~|Crss<br>~~ee~~<br>~~——_~~|<br>~~ee~~|29.8<br>~~ee~~|<br>~~ee~~<br>~~a~~|pF<br>~~ee~~<br>~~a~~|||
|Total Gate Charge (Note 11)<br>~~ee~~<br>~~——_~~|Qg<br>~~ee~~<br>~~——_~~|<br>~~ee~~|7.1<br>~~ee~~|<br>~~ee~~<br>~~a~~|nC<br>~~ee~~<br>~~a~~|VGS= -6.0V<br>~~ee~~<br>~~ae~~|VDS= -50V<br>ID= -1.4A<br>~~ee~~<br>~~e~~<br>~~ee~~|
|Total Gate Charge (Note 11)<br>~~ee ~~<br>~~a~~<br>~~——_~~|Qg<br> ~~ee~~<br>~~a~~<br>~~——_~~|<br>~~ee~~<br>~~a~~|10.7<br>~~ee~~<br>~~a~~|<br>~~ee~~<br>~~a~~<br>~~a~~|nC<br>~~ee~~<br>~~a~~<br>~~a~~|VGS= -10V<br>~~ee~~<br>~~ae~~<br>~~ee~~||
|Gate-Source Charge (Note 11)<br>~~——_~~|Qgs<br>~~——_~~||1.7|<br>~~a~~|nC<br>~~a~~|||
|Gate-Drain Charge (Note 11)<br>~~——_~~<br>~~———~~|Qgd<br>~~——_~~<br>~~———~~||3.8|<br>~~a~~<br>~~ee~~|nC<br>~~a~~<br>~~ee~~|||
|Turn-On DelayTime (Note 11)<br>~~——_~~<br>~~———~~|tD(ON)<br>~~——_~~<br>~~———~~||3.0|<br>~~a~~<br>~~ee~~|ns<br>~~a~~<br>~~ee~~|VDD= -15V, VGS= -10V<br>ID= -1A, RG6.0Ω<br>~~ae~~<br>~~ee~~||
|Turn-On Rise Time (Note 11)<br>~~——_~~<br>~~a~~<br>~~———~~|tR<br>~~——_~~<br>~~a~~<br>~~———~~|<br>~~a~~|3.5<br>~~a~~|<br>~~a~~<br>~~a~~<br>~~ee~~|ns<br>~~a~~<br>~~a~~<br>~~ee~~|||
|Turn-Off DelayTime (Note 11)<br>~~———~~|tD(OFF)<br>~~———~~||13.4|<br>~~ee~~|ns<br>~~ee~~|||
|Turn-Off Fall Time(Note 11)<br>~~———~~|tF<br>~~———~~||7.2|<br>~~ee~~|ns<br>~~ee~~|||



7. Same as Note 6, except the device is measured at t  10 seconds. 

8. Same as Note 6, except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature. 

9. Measured under pulsed conditions. Pulse width  300µs; duty cycle  2%. 

10. For design aid only, not subject to production testing. 

11. Switching characteristics are independent of operating junction temperatures. 

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**ZXMP10A17GQ** 

## **Thermal Characteristics** 

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**ZXMP10A17GQ** 

## **Typical Characteristics** (Cont.) 

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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SOT223<br>D<br>b1 Q<br>C SOT223<br>Dim  Min  Max  Typ<br>A 1.55 1.65 1.60<br>A1 0.010 0.15 0.05<br>b 0.60 0.80 0.70<br>b1 2.90  3.10  3.00<br>E ie E1 === C 0.20  0.30  0.25<br>D 6.45  6.55  6.50<br>Gauge E 3.45  3.55  3.50<br>Plane<br>0.25 E1 6.90  7.10  7.00<br>Seating L e -  -  4.60<br>Plane e1 -  -  2.30<br>e1 b L 0.85  1.05  0.95<br>Q 0.84  0.94  0.89<br>e All Dimensions in mm<br>A A1 7°<br>0°-10°<br>7°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT223** 

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X1<br>Y1<br>al<br>C1 Y2<br>Y<br>ooo X C<br>**----- End of picture text -----**<br>


|**Dimensions Value**|**Dimensions Value(in mm)**|
|---|---|
|**C**|**()**<br>2.30|
|**C1**|6.40|
|**X**|1.20|
|**X1**|3.30|
|**Y**|1.60|
|**Y1**|1.60|
|**Y2**|8.00|



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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2017, Diodes Incorporated 

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- [Supplier page](https://es.farnell.com/diodes-inc/zxmp10a17gqta/mosfet-p-ch-100v-1-7a-sot-223/dp/3943996)
---

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