# Power MOSFET, P Channel, 100 V, 700 mA, 1 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3127504/)

**URL**: https://novapart.co/products/ZXMP10A13FQTA/power-mosfet-p-channel-100-v-700-ma-1-ohm-sot-23
**SKU**: ZXMP10A13FQTA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2810
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-700mA; Drain Source Voltage Vds:-100V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 806mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 700mA |
| Drain Source On State Resistance | 1ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3127504/)

**ZXMP10A13FQ** - **100V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**BVDSS**<br>**Max RDS(ON)**<br>**Max ID **<br>**TA = +25°C**<br>-100V<br>1.0@ VGS= -10V<br>-0.7A<br>1.45@ VGS= -6.0V<br>-0.5A|**BVDSS**<br>**Max RDS(ON)**<br>**Max ID **<br>**TA = +25°C**<br>-100V<br>1.0@ VGS= -10V<br>-0.7A<br>1.45@ VGS= -6.0V<br>-0.5A|**BVDSS**<br>**Max RDS(ON)**<br>**Max ID **<br>**TA = +25°C**<br>-100V<br>1.0@ VGS= -10V<br>-0.7A<br>1.45@ VGS= -6.0V<br>-0.5A|
|---|---|---|
|**BVDSS**|**Max RDS(ON)**|**Max ID **<br>**TA = +25°C**|
|-100V|1.0@ VGS= -10V|-0.7A|
||1.45@ VGS= -6.0V|-0.5A|



## **Features and Benefits** 

- Fast Switching Speed 

- Low Input Capacitance 

- Low Gate Charge 

- Low Threshold 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description and Applications** 

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Mechanical Data** 

   - Case: SOT23 (Type DN) 

- DC-DC Converters 

- Power Management Functions 

- Disconnect Switches 

- Motor Control 

- Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 

- Weight: 0.009 grams (Approximate) 

SOT23 (Type DN) 

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D<br>S<br>G<br>D<br>G<br>| 8 S<br>**----- End of picture text -----**<br>


Top View 

Top View Pin Out 

Equivalent Circuit 

## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|
|---|---|---|
|**Part Number**<br>**Case**<br>**Packaging**<br>ZXMP10A13FQTA<br>SOT23(Type DN)<br>3000/Tape & Reel<br>ZXMP10A13FQTC<br>SOT23 (TypeDN)<br>10,000/Tape &Reel|||
|**Part Number**|**Case**|**Packaging**|
|ZXMP10A13FQTA|SOT23(Type DN)|3000/Tape & Reel|
|ZXMP10A13FQTC|SOT23 (TypeDN)|10,000/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/product-compliance-definitions/. 

   5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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SOT23 (Type DN)<br>7P1 7P1 = Product Type Marking Code<br>**----- End of picture text -----**<br>


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ZXMP10A13FQ Document number: DS39031  Rev. 2 - 2 

November 2017 © Diodes Incorporated 

**ZXMP10A13FQ** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-100|V|
|Gate-Source Voltage|||VGS|±20|V|
|Continuous Drain Current|VGS= -10V|(Note 7)<br>TA= +70°C     (Note 7)<br>(Note 7)|(Note 7)<br>= +70°C     (Note 7)<br>ID|-0.7<br>-0.5<br>-0.6|A|
|Pulsed Drain Current (Note 8)|||IDM|-3.1|A|
|Continuous Source Current (BodyDiode) (Note 6)|||IS|-1.1|A|
|Pulsed Source Current (BodyDiode) (Note 8)|||ISM|-3.1|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation (Note 6)<br>Linear Derating Factor|PD|625<br>5|mW<br>mW/°C|
|Power Dissipation (Note 7)<br>Linear Derating Factor|PD|806<br>6.4|mW<br>mW/°C|
|Thermal Resistance, Junction to Ambient (Note 6)|RθJA|200|°C/W|
|Thermal Resistance, Junction to Ambient (Note 7)|RθJA|155|°C/W|
|Thermal Resistance, Junction to Leads (Note 9)|RθJL|194|°C/W|
|Operatingand Storage Temperature Range|TJ, TSTG|-55 to +150|°C|



Notes: 6. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions. 

7. For a device surface mounted on FR-4 PCB measured at t ≤ 5 secs. 

8. Repetitive rating 25mm x 25mm FR-4 PCB, D = 0.05 pulse width = 10μs - pulse current limited by maximum junction temperature. 

9. Thermal resistance from junction to solder-point (at the end of the drain lead). 

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**ZXMP10A13FQ** 

## **Thermal Characteristics** 

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10<br>R<br>LimitedDS(on) = a<br>1 Ca ERTS SSO<br>ECC DC 7 SOS SSS<br>100m 1s<br>100ms<br>PT tity, 10ms 7A DAL UNNT<br>10m Single Pulse 1ms<br>! T amb =25oC Sa / 100 CR s<br>a Pe PTT |<br>1 10 100<br>-VDS  Drain-Source Voltage (V)<br>Safe Operating Area<br>200 o<br>T =25 C<br>amb<br>[on |<br>i a ull fll<br>150<br>0 0 A Ae<br>D=0.5<br>100 ! / «(<br>HST: i<br>Single Pulse<br>D=0.2<br>50 See ez 4TTL D=0.05<br>tT AHA<br>D=0.1<br>0<br>100μµ  1m 10m 100m 1 10 100 1k<br>Pulse Width (s)<br>  Drain Current (A)<br>D<br>-I<br>C/W)<br>o<br>Thermal Resistance (<br>**----- End of picture text -----**<br>


**Transient Thermal Impedance** 

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0.7<br>0.6 FF]<br>0.5 aN eee<br>0.4<br>~ ~<br>0.3<br>0.2 IN<br>0.1 Pt | te | TN<br>0.0 IN<br>0 20 40 60 80 100 120 140 160<br> Temperature (oC)<br>Derating Curve<br>Seen Single Pulse o<br>a T =25 C il<br>amb<br>10 CTE NUTT il<br>CTIFHA HAECAINNH -HrTCHE HeTT<br>|<br>1 CECE ET<br>100μµ  1m 10m 100m 1 10 100 1k<br>Pulse Width (s)<br>Pulse Power Dissipation<br> Max Power Dissipation (W)<br> Maximum Power (W)<br>**----- End of picture text -----**<br>


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ZXMP10A13FQ Document number: DS39031  Rev. 2 - 2 

November 2017 © Diodes Incorporated 

**ZXMP10A13FQ** 

## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~————~~|**Symbol**<br>~~————~~|**Min**<br>~~————~~|**Typ**<br>~~————~~|**Max**<br>~~————~~|**Unit**<br>~~————~~|**Test Condition**<br>~~————~~|
|**OFF CHARACTERISTICS**<br>~~————~~|||||||
|Drain-Source Breakdown Voltage<br>~~————~~|BVDSS<br>~~————~~<br>~~nN~~|-100<br>~~————~~<br>~~RII~~|<br>~~————~~<br>~~(ORS~~|<br>~~————~~<br>~~I~~|V<br>~~————~~<br>~~UU~~|ID= -250µA, VGS= 0V<br>~~————~~|
|Zero Gate Voltage Drain Current<br>~~————~~<br>~~I~~|IDSS<br>~~————~~<br>~~I~~<br>~~nN~~<br>~~I~~|<br>~~————~~<br>~~I~~<br>~~RII~~<br>~~(ID~~|<br>~~————~~<br>~~I~~<br>~~(ORS~~<br>~~(ID~~|-1.0<br>~~————~~<br>~~I~~<br>~~I~~<br>~~I~~|µA<br>~~————~~<br>~~I~~<br>~~UU~~<br>~~OO~~|VDS= -100V, VGS= 0V<br>~~————~~<br>~~I~~|
|Gate-Source Leakage<br>~~TD~~<br>~~———~~|IGSS<br>~~nN ~~<br>~~TD~~<br>~~I~~<br>~~——~~|<br> ~~RII ~~<br>~~TD~~<br>~~(ID~~<br>~~——~~|<br> ~~(ORS ~~<br>~~TD~~<br>~~(ID~~<br>~~——~~|±100<br> ~~I ~~<br>~~TD~~<br>~~I~~<br>~~——~~|nA<br> ~~UU~~<br>~~TD~~<br>~~OO~~<br>~~——~~|VGS= ±20V, VDS= 0V<br>~~TD~~<br>~~——~~|
|**ON CHARACTERISTICS**<br>~~I~~<br>~~(ID I OO~~<br>~~———~~|||||||
|Gate Threshold Voltage<br>~~———~~<br>~~———~~|VGS(TH)<br>~~——~~<br>~~———~~|-2.0<br>~~——~~<br>~~———~~|<br>~~——~~<br>~~———~~|-4.0<br>~~——~~<br>~~———~~|V<br>~~——~~<br>~~———~~|ID= -250µA, VDS= VGS<br>~~——~~<br>~~———~~|
|Static Drain-Source On-Resistance (Note 10)<br>~~———~~<br>~~———~~|RDS(ON)<br>~~——~~<br>~~———~~<br>~~I~~|<br>~~——~~<br>~~———~~<br>~~I (OD~~|<br>~~——~~<br>~~———~~<br>~~(OD~~|1.0<br>~~——~~<br>~~———~~|Ω<br>~~——~~<br>~~———~~<br>~~OO~~|VGS= -10V, ID= -0.6A<br>~~——~~<br>~~———~~|
|||||1.45<br>~~———~~<br>~~I~~||VGS= -6.0V, ID= -0.5A<br>~~———~~|
|Forward Transconductance (Notes 10 and 12)<br>~~TD~~|gfs<br>~~TD~~<br>~~I~~|<br>~~TD~~<br>~~I (OD~~|1.2<br>~~TD~~<br>~~(OD~~|<br>~~TD~~<br>~~I~~|S<br>~~TD~~<br>~~OO~~|VDS= -15V, ID= -0.6A<br>~~TD~~|
|Diode Forward Voltage (Note 10)<br>~~S$~~|VSD<br>~~I~~|<br>~~I (OD~~|-0.85<br>~~(OD ~~<br>~~tr~~|-0.95<br> ~~I ~~<br>~~tr~~|V<br> ~~OO~~|TJ= +25°C, IS= -0.75A, VGS= 0V|
|Reverse RecoveryTime (Note 12)<br>~~S$~~|tRR||29<br>~~tr~~|<br>~~tr~~|ns|TJ= +25°C, IF= -0.9A,<br>di/dt = 100A/µs|
|Reverse RecoveryCharge (Note 12)<br>~~S$~~|QRR||31<br>~~tr~~|<br>~~tr~~|nC||
|**DYNAMIC CHARACTERISTICS** (Note 12)<br>~~S$~~<br>~~tr~~<br>~~DD~~<br>~~Oe~~<br>~~ee~~|||||||
|Input Capacitance<br>~~nD~~<br>~~ee~~|Ciss<br>~~nD~~<br>~~DD~~<br>~~ee~~|<br>~~nD~~<br>~~ee~~|141<br>~~nD~~<br>~~ee~~|<br>~~nD~~<br>~~ee~~|pF<br>~~ee~~<br>~~Oe~~|VDS= -50V, VGS= 0V<br>f = 1.0MHz<br>~~ee~~<br>~~ee~~|
|Output Capacitance<br>~~ee~~|Coss<br>~~DD~~<br>~~ee~~|<br>~~ee~~|13.1<br>~~ee~~|<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|<br>~~ee~~|10.8<br>~~ee~~|<br>~~ee~~|||
|Turn-On DelayTime (Note 11)|tD(ON)<br>~~GD~~|<br>~~I~~|1.6<br>~~I~~||ns<br>~~Oe~~|VDD= -50V, ID= -1.0A,<br>RG≈ 6.0ΩVGS= -10V<br>~~ee~~|
|Turn-On Rise Time (Note 11)<br>~~I~~|tR<br>~~I~~<br>~~GD~~|<br>~~I~~<br>~~I~~|2.1<br>~~I~~<br>~~I~~|<br>~~I~~|||
|Turn-Off DelayTime (Note 11)<br>~~nn~~|tD(OFF)<br>~~GD ~~<br>~~nn~~|<br> ~~I~~<br>~~nn~~|5.9<br>~~I~~<br>~~nn~~|<br>~~nn~~|||
|Turn-Off Fall Time (Note 11)<br>~~Gn~~|tF<br>~~Gn~~|<br>~~Gn~~|3.3<br>~~Gn~~|<br>~~Gn~~|||
|Total Gate Charge (Note 11)<br>~~re~~|Qg<br>~~re~~|<br>~~re~~|1.8<br>~~re~~|<br>~~re~~|nC<br>~~re~~|VDS= -50V, VGS= -5.0V,<br>ID= -0.6A<br>~~re~~|
|Total Gate Charge (Note 11)<br>~~re~~<br>~~en~~|Qg<br>~~re~~<br>~~en~~|<br>~~re~~<br>~~en~~|3.5<br>~~re~~<br>~~en~~|<br>~~re~~<br>~~en~~|nC<br>~~re~~<br>~~en~~|VDS= -50V, VGS= -10V,<br>ID= -0.6A<br>~~re~~<br>~~en~~|
|Gate-Source Charge (Note 11)<br>~~en~~|Qgs<br>~~en~~|<br>~~en~~|0.6<br>~~en~~|<br>~~en~~|||
|Gate-Drain Charge(Note 11)<br>~~en~~|Qgd<br>~~en~~|<br>~~en~~|1.6<br>~~en~~|<br>~~en~~|||



12. For design aid only, not subject to production testing. 

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**ZXMP10A13FQ** 

## **Typical Characteristics** 

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**----- Start of picture text -----**<br>
10 10<br>TJ = 25oC 10V 7V TJ = 150oC 10V 7V<br>5V 5V<br>1 1<br>4.5V 4.5V<br>4V<br>4V<br>0.1 0.1 3.5V<br>3.5V<br>3V<br>0.01 0.01<br>1E-3 iC Cio -VGS 1E-3 Ai Ceti Cee? =. -VGS 0<br>0.1 1 10 0.1 1 10<br>-VDS  Drain-Source Voltage (V) -VDS  Drain-Source Voltage (V)<br>Output Characteristics Output Characteristics<br>1<br>T A = 150°C 2.2<br>0.9<br>TA = 125°C V = -10V<br>1 0.8 2.0 GS<br>0.7 oe VDS = -10V VDS = 10V ee ie 1.8 = I D  = - 0.6A A<br>0.6 es T = 150 癈  ioe 1.6 ee 7 _| R<br>0.5 T = 25 癈 1.4 DS(ON)<br>0.1 0.4 ee TA  = 85°C ae 1.2 ee<br>0.3 I 1.0 —__ V GS(TH)<br>0.2 ff TA = 25°C P| 0.8 a=| V  = V — — +<br>GS DS<br>0.01 0.10 pe TA = -55°C -V DS  = 10V 0.60.4 — I D  = -250A —<br>0 31 2 3 44 5 6 75 8<br>-V-VGSGS-V, Gate-Source Voltage (V)   Gate-Source Voltage (V) Typical Transfer Characteristics GS, GATE-SOURCE VOLTAGE (V) -50 TJ  Junction Temperature (0 50 100 oC) 150<br>Typical Transfer Characteristics Normalised Curves v Temperature<br>10<br>| | CL ee ee eamEE—eE_——eEEE EE——————<br>3.5V -V GS T J  = 25 o C<br>100 SamiFY 4V Ht ===a o<br>T  = 150 C<br>1 J<br>VASE eee 4.5V YT TT rr<br>Ze 5V Sf Sf<br>10 YY | po ff T  = 25 o C<br>SS SSS ee eet 0.1 FT| | TY Yl J |<br>Se a 7V a ee<br>eT CT ATTtT a<br>10V<br>1 oe et | ay A<br>0.01<br>0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.0 1.2<br>-ID  Drain Current (A) -VSD  Source-Drain Voltage (V)<br>On-Resistance v Drain Current Source-Drain Diode Forward Voltage<br>, Drain Current (A)<br>D<br>-I<br>  Drain Current (A)   Drain Current (A)<br>D D<br>-I -I<br>GS(TH)<br> and V<br>DS(ON)<br>  Drain Current (A)<br>D<br>-I Normalised R<br><br>  Reverse Drain Current (A)<br>SD<br> Drain-Source On-Resistance  -I<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)D<br>-I<br>**----- End of picture text -----**<br>


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**ZXMP10A13FQ** 

**Typical Characteristics** (Cont.) 

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**----- Start of picture text -----**<br>
10<br>200 V GS  = 0V I D  = -0.6A<br>ll f = 1MHz ill 8 ee aan<br>a lll +++ + 4$-+4<br>150<br>e e CISS |e 6<br>100 C OSS<br>A 4 Pf<br>ee a C RSS sm |<br>50 ey | 2 > a ee<br>Pd OA V DS  = -50V<br>0 liret eee | TT 0 Vtf- |yt fhtT foo 4<br>0.1 1 10 100 0 1 2 3 4<br>-VDS - Drain - Source Voltage (V) Q - Charge (nC)<br>Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge<br>C  Capacitance (pF)   Gate-Source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


## **Test Circuits** 

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**----- Start of picture text -----**<br>
| tD(ON) tR Kt|! tD(OFF) +> tR<br>|¢——_» tON | |+#———__>} tON<br>**----- End of picture text -----**<br>


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ZXMP10A13FQ Document number: DS39031  Rev. 2 - 2 

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**ZXMP10A13FQ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT23 (Type DN)** 

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**----- Start of picture text -----**<br>
b<br>SOT23 (Type DN)<br>ae SOC<br>Dim  Min  Max  Typ<br>A  0.89 1.12  1.00<br>A1  0.01  0.10 0.05<br>E<br>ae b  0.30  0.51  0.45<br>c  0.08  0.20  0.10<br>D  2.80  3.04  3.00<br>E  2.10  2.64  2.42<br>e E1  1.20  1.40  1.37<br>e1 e  0.95 REF<br>e1  1.90 REF<br>mo D ae L  0.25  0.60  0.30<br>E1<br>L1  0.45 0.62  0.54<br>All Dimensions in mm<br>L<br>A<br>Si c — i<br>NU J |<br>A1<br>L<br>Ju<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT23 (Type DN)** 

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**----- Start of picture text -----**<br>
Y<br>Y1 aia C<br>oH<br>Po X Ln X1<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|2.0|
|**X**|0.8|
|**X1**|1.35|
|**Y**|0.9|
|**Y1**|2.9|



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**ZXMP10A13FQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2017, Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

ZXMP10A13FQ Document number: DS39031  Rev. 2 - 2 

November 2017 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/ZXMP10A13FQTA/power-mosfet-p-channel-100-v-700-ma-1-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/zxmp10a13fqta/mosfet-aec-q101-p-ch-100v-0-7a/dp/3127504)
---

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