# Power MOSFET, N Channel, 70 V, 6.1 A, 0.13 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3943994/)

**URL**: https://novapart.co/products/ZXMN7A11KTC/power-mosfet-n-channel-70-v-61-a-013-ohm-to-252
**SKU**: ZXMN7A11KTC
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4190
**Stock**: 200+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.11W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 70V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6.1A |
| Drain Source On State Resistance | 0.13ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943994/)

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## **ZXMN7A11K 70V N-channel enhancement mode MOSFET** 

## **Summary** 

**V =70V : R =0.13** � **(BR)DSS DS(on) ID=6.1A** 

## **Description** 

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. 

## **Features** 

- Low on-resistance 

- Fast switching speed 

- Low threshold 

- Low gate drive 

- DPAK package 

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## **Applications** 

- DC-DC converters 

- Power management functions 

- Disconnect switches 

- Motor control 

- Class D audio output stages 

## **Ordering information** 

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|**Device**|**Reel size**<br>**(inches)**|**Tape width**<br>**(mm)**|**Quantity per reel**|
|---|---|---|---|
|ZXMN7A11KTC|13|16|2,500|



## **Device marking** 

ZXMN 7A11 

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## **ZXMN7A11K** 

## **Absolute maximum ratings** 

|**Parameter**|**Symbol**|**Limit**|**Unit**|
|---|---|---|---|
|Drain-source voltage|VDSS|70|V|
|Gate-source voltage|VGS|±20|V|
|Continuous drain current @ VGS=10V; TA=25°C  (b)<br> @ VGS=10V; TA=70°C  (b)<br> @ VGS=10V; TA=25°C  (a)|ID|6.1<br>4.9<br>4.2|A|
|Pulsed drain current (c)|IDM|17|A|
|Continuous source current (body diode) (b)|IS|8.7|A|
|Pulsed source current (body diode) (c)|ISM|17|A|
|Power dissipation at TA=25°C (a)<br>Linear derating factor|PD|4.06<br>32.4|W<br>mW/°C|
|Power dissipation at TA=25°C (b)<br>Linear derating factor|PD|8.5<br>68|W<br>mW/°C|
|Power dissipation at TA=25°C (d)<br>Linear derating factor|PD|2.11<br>16.8|W<br>mW/°C|
|Operating and storage temperature range|Tj, Tstg|-55 to +150|°C|



## **Thermal resistance** 

|**Thermal resistance**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Limit**|**Unit**|
|Junction to ambient|R�JA|30.8|°C/W|
|Junction to ambient|R�JA|14.7|°C/W|
|Junction to ambient|R�JA|59.1|°C/W|



## **NOTES:** 

(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. 

(b)For a device surface mounted on FR4 PCB measured at t � 10 sec. 

(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300�s - pulse width limited by maximum junction temperature. 

(d)For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 

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## **ZXMN7A11K** 

## **Characteristics** 

> © Zetex Semiconductors plc 2006 

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## **ZXMN7A11K** 

## **Electrical characteristics (at Tamb = 25°C unless otherwise stated)** 

|**Parameter**|**Symbol**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|---|---|---|---|---|---|---|
|**Static**|||||||
|Drain-source breakdown<br>voltage|V(BR)DSS|70|||V|ID= 250�A, VGS=0V|
|Zero gate voltage drain current|IDSS|||1|�A|VDS= 70V, VGS=0V|
|Gate-body leakage|IGSS|||100|nA|VGS=±20V, VDS=0V|
|Gate-source threshold voltage|VGS(th)|1.0|||V|ID= 250�A, VDS=VGS|
|Static drain-source on-state<br>resistance(*)|RDS(on)|||0.13|�|VGS= 10V, ID= 4.4A|
|||||0.19|�|VGS= 4.5V, ID = 3.8A|
|Forward transconductance(*)(‡)|gfs||4.66||S|VDS= 15V, ID= 4.4A|
|**Dynamic**(‡)|||||||
|Input capacitance|Ciss||298||pF|VDS= 40V, VGS=0V<br>f=1MHz|
|Output capacitance|Coss||35||pF||
|Reverse transfer capacitance|Crss||21||pF||
|**Switching**(†) (‡)|||||||
|Turn-on-delay time|td(on)||1.9||ns|VDD= 35V, ID= 1A<br>RG≅6.0�, VGS= 10V|
|Rise time|tr||2||ns||
|Turn-off delay time|td(off)||11.5||ns||
|Fall time|tf||5.8||ns||
|Total gate charge|Qg||4.35||nC|VDS= 35V, VGS= 5V<br>ID= 4.4A|
|Total gate charge|Qg||7.4||nC|VDS=35V, VGS= 10V<br>ID= 4.4A|
|Gate-source charge|Qgs||1.06||nC||
|Gate drain charge|Qgd||1.8||nC||
|**Source-drain diode**|||||||
|Diode forward voltage(*)|VSD||0.85|0.95|V|Tj=25°C, IS= 2.5A,<br>VGS=0V|
|Reverse recoverytime(‡)|trr||19.8||ns|Tj=25°C, IS= 2.5A,<br>di/dt=100A/�s|
|Reverse recoverycharge(‡)|Qrr||14||nC||



## **NOTES:** 

(*) Measured under pulsed conditions. Pulse width � 300�s; duty cycle � 2%. 

(†) Switching characteristics are independent of operating junction temperature. 

(‡) For design aid only, not subject to production testing. 

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© Zetex Semiconductors plc 2006 

**ZXMN7A11K** 

## **Typical characteristics** 

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**ZXMN7A11K** 

## **Typical characteristics** 

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## **ZXMN7A11K** 

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## **ZXMN7A11K** 

## **Package outline - DPAK** 

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|**DIM**|**Inches**|**Inches**|**Millimeters**|**Millimeters**|**DIM**|**Inches**|**Inches**|**Millimeters**|**Millimeters**|
|---|---|---|---|---|---|---|---|---|---|
||**Min**|**Max**|**Min**|**Max**||**Min**|**Max**|**Min**|**Max**|
|A|0.086|0.094|2.18|2.39|e|0.090 BSC||2.29 BSC||
|A1|-|0.005|-|0.127|H|0.370|0.410|9.40|10.41|
|b|0.020|0.035|0.508|0.89|L|0.055|0.070|1.40|1.78|
|b2|0.030|0.045|0.762|1.14|L1|0.108 REF||2.74 REF||
|b3|0.205|0.215|5.21|5.46|L2|0.020 BSC||0.508 BSC||
|c|0.018|0.024|0.457|0.61|L3|0.035|0.065|0.89|1.65|
|c2|0.018|0.023|0.457|0.584|L4|0.025|0.040|0.635|1.016|
|D|0.213|0.245|5.41|6.22|L5|0.045|0.060|1.14|1.52|
|D1|0.205|-|5.21|-|θ1°|0°|10°|0°|10°|
|E|0.250|0.265|6.35|6.73|θ°|0°|15°|0°|15°|
|E1|0.170|-|4.32|-|-|-|-|-|-|



**Note:** Controlling dimensions are in inches. Approximate dimensions are provided in millimeters 

**Europe Americas Asia Pacific Corporate Headquarters** Zetex GmbH Zetex Inc Zetex (Asia Ltd) Zetex Semiconductors plc Kustermann-park 700 Veterans Memorial Highway 3701-04 Metroplaza Tower 1 Zetex Technology Park, Chadderton Balanstraße 59 Hauppauge, NY 11788 Hing Fong Road, Kwai Fong Oldham, OL9 9LL D-81541 München USA Hong Kong United Kingdom Germany Telefon: (49) 89 45 49 49 0 Telephone: (1) 631 360 2222 Telephone: (852) 26100 611 Telephone: (44) 161 622 4444 Fax: (49) 89 45 49 49 49 Fax: (1) 631 360 8222 Fax: (852) 24250 494 Fax: (44) 161 622 4446 europe.sales@zetex.com usa.sales@zetex.com asia.sales@zetex.com hq@zetex.com 

For international sales offices visit **www.zetex.com/offices** Zetex products are distributed worldwide. For details, see **www.zetex.com/salesnetwork** This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. 

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© Zetex Semiconductors plc 2006 



## Links

- [View this product on Novapart](https://novapart.co/products/ZXMN7A11KTC/power-mosfet-n-channel-70-v-61-a-013-ohm-to-252)
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- [Supplier page](https://es.farnell.com/diodes-inc/zxmn7a11ktc/mosfet-n-ch-70v-6-1a-to-252/dp/3943994)
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