# Power MOSFET, N Channel, 60 V, 5.36 A, 0.08 ohm, TO-252 (DPAK), Surface Mount ![Product image](https://novapart.co/image/farnell:3943993RL/) **URL**: https://novapart.co/products/ZXMN6A08KTC/power-mosfet-n-channel-60-v-536-a-008-ohm-to-252 **SKU**: ZXMN6A08KTC **Manufacturer**: DIODES INC. **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.2090 **Stock**: 1000+ **Lead Time**: 78 days (indicative) ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 2.12W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-252 (DPAK) | | Drain Source Voltage Vds | 60V | | Operating Temperature Max | 150Β°C | | Continuous Drain Current Id | 5.36A | | Drain Source On State Resistance | 0.08ohm | | Gate Source Threshold Voltage Max | 3V | ## Datasheet πŸ“„ [Download PDF](https://novapart.co/datasheet/farnell:3943993RL/) **A Product Line of Diodes Incorporated** **ZXMN6A08K** **60V N-CHANNEL ENHANCEMENT MODE MOSFET** Please click here to visit our online spice models database. Please click here to visit our online spice models database. ## **Product Summary** |**Product Summaryy**|**Product Summaryy**|**Product Summaryy**| |---|---|---| |||| |**V(BR)DSS**|**RDS(on)**|**ID**
**TA = 25**Β°**C**| |60V|80mΞ©@ VGS= 10V|7.90A| ||150mΞ©@ VGS= 4.5V|5.75A| ## **Features and Benefits** - Low on-resistance - Fast switching speed - β€œGreen” component and RoHS compliant (Note 1) ## **Mechanical Data** - Case: TO-252 ## **Description and Applications** This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. - Backlighting - Case Material: Molded Plastic, β€œGreen” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) - Moisture Sensitivity: Level 1 per J-STD-020D - Terminals Connections: See Diagram - Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 - Weight: 0.33 grams (approximate) - DC-DC Converters - Power management functions **==> picture [343 x 117] intentionally omitted <==** **----- Start of picture text -----**
D
D
G
D
& G S S
TOP VIEW PIN OUT -TOP VIEW Equivalent Circuit
**----- End of picture text -----**
## **Ordering Information** (Note 1) |**Product**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**| |---|---|---|---|---| |ZXMN6A08KTC|See Below|13|16|2,500| Note: 1. Diodes, Inc. defines β€œGreen” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s β€œGreen” Policy can be found on our website. For packaging details, go to our website. ## **Marking Information** **==> picture [29 x 30] intentionally omitted <==** **----- Start of picture text -----**
ZXMN
6A08
YYWW
**----- End of picture text -----**
ZXMN = Product Type Marking Code, Line 1 6A08 = Product Type Marking Code, Line 2 YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52) 1 of 8 **www.diodes.com** ZXMN6A08K Document Revision: 2 July 2009 Β© Diodes Incorporated **A Product Line of Diodes Incorporated** | ~~ZETEX~~ **ZXMN6A08K** ~~-β€”_~~ ## **Maximum Ratings** @TA = 25Β°C unless otherwise specified |**Maximum Ratingsgss** @TA = 25Β°C unless otherwise specifiedA = 25Β°C unless otherwise specified= 25Β°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25Β°C unless otherwise specifiedA = 25Β°C unless otherwise specified= 25Β°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25Β°C unless otherwise specifiedA = 25Β°C unless otherwise specified= 25Β°C unless otherwise specified|@TA = 25Β°C unless otherwise specifiedA = 25Β°C unless otherwise specified= 25Β°C unless otherwise specified||| |---|---|---|---|---|---| |**Characteristic**|||**Symbol**|**Value**|**Unit**| |Drain-Source voltage|||VDSS|60|V| |Gate-Source voltage|||VGS|Β±20|V| |Continuous Drain current|VGS= 10V|(Note 3)|ID|7.90|A| |||TA=70Β°C(Note 3)||6.30|| |||(Note 2)||5.36|| |Pulsed Drain current|VGS= 10V|(Note 4)|IDM|24.3|A| |Continuous Source current(Bodydiode)||(Note 3)|IS|9.0|A| |Pulsed Source current(Bodydiode)||(Note 4)|ISM|24.3|A| **Thermal Characteristics** @TA = 25Β°C unless otherwise specified |**Thermal Characteristics **@TA = 25Β°C unless otherwise specifiedA = 25Β°C unless otherwise specified= 25Β°C unless otherwise specified|**Thermal Characteristics **@TA = 25Β°C unless otherwise specifiedA = 25Β°C unless otherwise specified= 25Β°C unless otherwise specified|@TA = 25Β°C unless otherwise specifiedA = 25Β°C unless otherwise specified= 25Β°C unless otherwise specified||| |---|---|---|---|---| |**Characteristic**||**Symbol**|**Value**|**Unit**| |Power dissipation
Linear derating factor|(Note 2)|PD|4.13
33.0|W
mW/Β°C| ||(Note 3)||8.94
71.5|| ||(Note 5)||2.12
16.9|| |Thermal Resistance, Junction to Ambient|(Note2)|RΞΈJA|30.3|Β°C/W| ||(Note 3)||14.0|| ||(Note 5)||59.1|| |Thermal Resistance,Junction to Lead|(Note 6)|RΞΈJL|2.77|| |Operatingand storage temperature range||TJ,TSTG|-55 to 150|Β°C| Notes: 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note 2, except the device is measured at t ≀ 10 sec. 4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 Β΅s. The pulse current is limited by the maximum junction temperature. 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 8 **www.diodes.com** ZXMN6A08K Document Revision: 2 July 2009 Β© Diodes Incorporated **A Product Line of Diodes Incorporated** **ZXMN6A08K** ## **Thermal Characteristics** **==> picture [436 x 534] intentionally omitted <==** **----- Start of picture text -----**
R DS(on) R DS(on)
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100ms 100ms
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25mm x 25mm | [yy SHrs oe 50mm x 50mm |Sett /\ |ae| i
10m 1oz FR4 Ea 100Β΅s 10m 2oz FR4 meat! 100Β΅s 1
1 10 1 10
VDS Drain-Source Voltage (V) VDS Drain-Source Voltage (V)
Safe Operating Area Safe Operating Area
60 35
Tamb=25 Β° C Pr ai 30 T amb =25Β°C
50 25mm x 25mm 50mm x 50mm
/. 1oz FR4 WANTON" AAT a 2oz FR4 AE
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30 D=0.5 aYAa MYWALA|| 20 D=0.5 2eees aay A
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20 D=0.2 FM CEI LAUeeTT D=0.1 TTI 10 nam”i D=0.2 D=0.1
SEAa CIN CTeee TT
10 ea, To Ni D=0.05 | nH 5 |mn oeINEH D=0.05 Hl
eer | Th Single Pulse Lh See Single Pulse
0 Se tir II TTL ill 0 Seer PCL anil
100Β΅ 1m 10m 100m 1 10 100 1k 100Β΅ 1m 10m 100m 1 10 100 1k
Pulse Width (s) Pulse Width (s)
Transient Thermal Impedance Transient Thermal Impedance
4.5
100 aeDy ENa Single Pulse T amb =25Β°C I| 4.03.5 TTNe1.1 50mm x 50mm 2oz FR4 =n
Co β€” ey 50mm x 50mm 2oz FR4 3.0 N\A 25mm x 25mm
COT CoonETTTSSSSO rl 2.5 PNR 1oz FR4 | |
10 B00 Ty I 2.0 = Ce
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25mm x 25mm
ant 1oz FR4 TCS 0.5 po
1 LAI Ui LUA UU 0.0 po
100Β΅ 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 120 140 160
Pulse Width (s) Temperature (Β°C)
Pulse Power Dissipation Derating Curve
Drain Current (A) Drain Current (A)
ID ID
Thermal Resistance (Β°C/W) Thermal Resistance (Β°C/W)
Max Power Dissipation (W) Max Power Dissipation (W)
**----- End of picture text -----**
3 of 8 **www.diodes.com** ZXMN6A08K Document Revision: 2 July 2009 Β© Diodes Incorporated **A Product Line of Diodes Incorporated** **ZXMN6A08K** ## **Electrical Characteristics** @TA = 25Β°C unless otherwise specified |**Electrical Characteristics**@TA = 25Β°C unless otherwise specifiedA = 25Β°C unless otherwise specified= 25Β°C unless otherwise specified|**Electrical Characteristics**@TA = 25Β°C unless otherwise specifiedA = 25Β°C unless otherwise specified= 25Β°C unless otherwise specified|**Electrical Characteristics**@TA = 25Β°C unless otherwise specifiedA = 25Β°C unless otherwise specified= 25Β°C unless otherwise specified|**Electrical Characteristics**@TA = 25Β°C unless otherwise specifiedA = 25Β°C unless otherwise specified= 25Β°C unless otherwise specified|**Electrical Characteristics**@TA = 25Β°C unless otherwise specifiedA = 25Β°C unless otherwise specified= 25Β°C unless otherwise specified|**Electrical Characteristics**@TA = 25Β°C unless otherwise specifiedA = 25Β°C unless otherwise specified= 25Β°C unless otherwise specified|**Electrical Characteristics**@TA = 25Β°C unless otherwise specifiedA = 25Β°C unless otherwise specified= 25Β°C unless otherwise specified|**Electrical Characteristics**@TA = 25Β°C unless otherwise specifiedA = 25Β°C unless otherwise specified= 25Β°C unless otherwise specified| |---|---|---|---|---|---|---|---| ||||||||| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|| |**OFF CHARACTERISTICS**|||||||| |Drain-Source Breakdown Voltage
~~β€”β€”β€”β€”β€”β€”~~|BVDSS
~~β€”β€”β€”β€”β€”β€”~~|60
~~β€”β€”β€”β€”β€”β€”~~|⎯
~~β€”β€”β€”β€”β€”β€”~~|⎯
~~β€”β€”β€”β€”β€”β€”~~|V
~~β€”β€”β€”β€”β€”β€”~~|ID= 250ΞΌA, VGS= 0V
~~β€”β€”β€”β€”β€”β€”~~|| |Zero Gate Voltage Drain Current
~~β€”β€”β€”β€”β€”β€”~~|IDSS
~~β€”β€”β€”β€”β€”β€”~~|⎯
~~β€”β€”β€”β€”β€”β€”~~|⎯
~~β€”β€”β€”β€”β€”β€”~~|0.5
~~β€”β€”β€”β€”β€”β€”~~|ΞΌA
~~β€”β€”β€”β€”β€”β€”~~|VDS= 60V, VGS= 0V
~~β€”β€”β€”β€”β€”β€”~~|| |Gate-Source Leakage
~~β€”β€”β€”β€”β€”β€”~~|IGSS
~~β€”β€”β€”β€”β€”β€”~~|⎯
~~β€”β€”β€”β€”β€”β€”~~|⎯
~~β€”β€”β€”β€”β€”β€”~~|Β±100
~~β€”β€”β€”β€”β€”β€”~~|nA
~~β€”β€”β€”β€”β€”β€”~~|VGS=Β±20V, VDS= 0V
~~β€”β€”β€”β€”β€”β€”~~|| |**ON CHARACTERISTICS**
~~β€”β€”β€”β€”β€”~~|||||||| |Gate Threshold Voltage
~~β€”β€”β€”β€”β€”~~|VGS(th)
~~β€”β€”β€”β€”β€”~~|1.0
~~β€”β€”β€”β€”β€”~~|⎯
~~β€”β€”β€”β€”β€”~~|3.0
~~β€”β€”β€”β€”β€”~~|V
~~β€”β€”β€”β€”β€”~~|ID= 250ΞΌA, VDS= VGS
~~β€”β€”β€”β€”β€”~~|| |Static Drain-Source On-Resistance (Note 7)
~~a~~
~~β€”β€”~~|RDS (ON)
~~a~~|⎯
~~a~~|⎯
~~a~~
~~QO~~|0.080
~~a~~|Ω
~~a~~
~~GO~~|VGS= 10V, ID= 4.8A
~~a~~|| |||||0.150
~~a~~
~~QO~~||VGS= 4.5V, ID= 4.2A
~~a~~|| |Forward Transconductance (Notes 7 & 8)
~~eG~~
~~β€”β€”~~|gfs
~~eG~~|⎯
~~eG~~|6.6
~~eG~~
~~QO~~|⎯
~~eG~~
~~QO~~|S
~~eG~~
~~GO~~|VDS= 15V, ID= 4.8A
~~eG~~|| |Diode Forward Voltage (Note 7)
~~β€”β€”~~|VSD|⎯|0.88
~~QO~~|0.95
~~QO~~|V
~~GO~~|IS= 4.0A, VGS= 0V|| |Reverse recovery time (Note 8)
~~β€”β€”~~|trr||19.2
~~QO~~|⎯
~~QO~~|ns
~~GO~~|IS= 1.4A, di/dt= 100A/ΞΌs
~~oe~~|| |Reverse recovery charge (Note 8)
~~β€”β€”~~
~~oe~~|Qrr
~~oe~~|⎯
~~oe~~|30.3
~~QO~~
~~oe~~|⎯
~~QO~~
~~oe~~|nC
~~GO~~
~~oe~~||| |**DYNAMIC CHARACTERISTICS(Note 8)**
~~QO GO~~
~~β€”β€”~~
~~oe~~|||||||| |Input Capacitance
~~pT~~|Ciss|⎯|459|⎯|pF|VDS= 40V, VGS= 0V
f= 1MHz|| |Output Capacitance|Coss|⎯|44.2|⎯|pF||| |Reverse Transfer Capacitance|Crss|⎯|24.1|⎯|pF||| |Total Gate Charge
~~eet~~|Qg
~~eet~~|⎯
~~eet~~|3.8
~~eet~~|⎯
~~eet~~|nC
~~eet~~|VGS= 4.5V
~~eet~~|VDS= 30V
ID= 1.4A
~~eet~~
~~See~~| |Total Gate Charge
~~a~~
~~eet~~|Qg
~~a~~
~~eet~~|⎯
~~a~~
~~eet~~|5.8
~~a~~
~~eet~~|⎯
~~a~~
~~eet~~|nC
~~a~~
~~eet~~|VGS= 10V
~~eet~~
~~See~~|| |Gate-Source Charge
~~eet~~|Qgs
~~eet~~|⎯
~~eet~~|1.4
~~eet~~|⎯
~~eet~~|nC
~~eet~~||| |Gate-Drain Charge
~~eet~~
~~β€”β€”_β€”~~|Qgd
~~eet~~
~~See~~|⎯
~~eet~~
~~See~~|1.9
~~eet~~
~~See~~|⎯
~~eet~~
~~See~~|nC
~~eet~~
~~See~~||| |Turn-On Delay Time (Note 9)
~~eet~~
~~β€”β€”_β€”~~|tD(on)
~~eet~~
~~See~~|⎯
~~eet~~
~~See~~|2.6
~~eet~~
~~See~~|⎯
~~eet~~
~~See~~|ns
~~eet~~
~~See~~|VDD= 30V, VGS= 10V
ID= 1.5A, RG≅6.0Ω
~~eet~~
~~See~~|| |Turn-On Rise Time (Note 9)
~~β€”β€”_β€”~~|tr
~~See~~|⎯
~~See~~|2.1
~~See~~|⎯
~~See~~|ns
~~See~~||| |Turn-Off Delay Time (Note 9)
~~β€”β€”_β€”~~|tD(off)
~~See~~|⎯
~~See~~|12.3
~~See~~|⎯
~~See~~|ns
~~See~~||| |Turn-Off Fall Time (Note 9)
~~β€”β€”_β€”~~|tf
~~See~~|⎯
~~See~~|4.6
~~See~~|⎯
~~See~~|ns
~~See~~||| 8. For design aid only, not subject to production testing. 9. Switching characteristics are independent of operating junction temperatures. 4 of 8 **www.diodes.com** ZXMN6A08K Document Revision: 2 July 2009 Β© Diodes Incorporated **A Product Line of Diodes Incorporated** **ZXMN6A08K** ## **Typical Characteristics** **==> picture [443 x 527] intentionally omitted <==** **----- Start of picture text -----**
10 T = 25Β°C 10V 5V 4.5V 10 T = 150Β°C 10V 5V
4V
eC 4V 1 iaA 3V3.5V
3.5V
1 AA eer 2 er β€”β€”
ee Pe ee 2.5V
Alls fj Pee eee im _β€”β€”β€” ene
0.1
V
Poet rh th 3V eT TT GS
te ete ecee
0.1 Se | VGS 0.01 CC β€”β€”β€” 2V
Ce β€”β€”β€”β€”β€”β€”β€”β€”β€”oo β€”
0.1 1 10 0.1 1 10
VDS Drain-Source Voltage (V) VDS Drain-Source Voltage (V)
Output Characteristics Output Characteristics
2.0
10 a= 1.8 V GS = 10V
T = 150Β°C 1.6 I D = 4.8A
= 1.4 | t~β€”SY | RDS(on)
1 SSS 1.2 β€” =
1.0
| T = 25Β°C 0.8 VGS(th)
SSS β€”β€”β€”β€”β€”β€”β€”β€”
0.1 ey 0.6 eeβ€” |
V = V
Ss 0.4 GS DS
VDS = 10V 0.2 I D = 250uA
0.01 =a 0.0 J Oo
2 3 4 5 -50 0 50 100 150
VGS Gate-Source Voltage (V) Tj Junction Temperature (Β°C)
Typical Transfer Characteristics Normalised Curves v Temperature
3V 3.5V 4V 4.5V
10
| T = 150 | | Β°C | | ft
1
ee ee ee | i y
V
T = 25Β°C GS 1
BSS Ee See
ey | ee e e yeee eee
ee ee 5V 0.1 pf fo fe)
Pe pf. f | T = 25Β°C {|_|
0.1 rrrβ€”β€” at| 7V β€” =FFSS > S=S TE
β€”β€”_β€”β€”_---β€”β€”β€”β€”β€”β€”β€”β€” 10V β€” A
β€”_β€”_β€”β€”Eβ€”β€”β€”β€” 0.01 PCIE ELL FL
0.1 1 10 0.2 0.4 0.6 0.8 1.0 1.2
ID Drain Current (A) VSD Source-Drain Voltage (V)
On-Resistance v Drain Current Source-Drain Diode Forward Voltage
Drain Current (A) Drain Current (A)
ID ID
GS(th)
and V
DS(on)
Drain Current (A)
ID
Normalised R
(Ξ©)
Reverse Drain Current (A)
Drain-Source On-Resistance
DS(on) ISD
R
**----- End of picture text -----**
5 of 8 **www.diodes.com** ZXMN6A08K Document Revision: 2 July 2009 Β© Diodes Incorporated **A Product Line of Diodes Incorporated** | **ZXMN6A08K** ## **Typical Characteristics - continued** **==> picture [436 x 164] intentionally omitted <==** **----- Start of picture text -----**
10
I = 1.4A
600 D
ALieeTYP 8 PfFEE eeeLf)
a β€”β€”__
V = 0V
400 f = 1MHzGS | C UE ao| 6 Ht V DS = 15V A
ISS
C 4
LH | OSS Ball P| | [ | Yi | [|
C
200 PEL RSS ee
ail aaeseer eee
2
PST
0 tl neTT 0 EZLEE E EEE LLL
1 10 0 1 2 3 4 5 6
VDS - Drain - Source Voltage (V) Q - Charge (nC)
Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge
C Capacitance (pF) Gate-Source Voltage (V)
GS
V
**----- End of picture text -----**
## **Test Circuits** **==> picture [443 x 121] intentionally omitted <==** **----- Start of picture text -----**
Current
regulator
Q G
12V 50k Same as
D.U.T
V G Q GS Q GD
| | β€˜ L o tt od
V DS
oO IG I
D.U.T
ID
V GS
**----- End of picture text -----**
Charge ## **Basic gate charge waveform** **Gate charge test circuit** **==> picture [202 x 116] intentionally omitted <==** **----- Start of picture text -----**
V DS
90% nN
!
I
10%
I I
V GS |
lolne td(on) t(on) tr | neqlee t d(off) t(on) tr |
**----- End of picture text -----**
**==> picture [176 x 69] intentionally omitted <==** **----- Start of picture text -----**
R D
V GS V DS
R G VDD
21 4
**----- End of picture text -----**
## **Switching time waveforms** ## **Switching time test circuit** 6 of 8 **www.diodes.com** ZXMN6A08K Document Revision: 2 July 2009 Β© Diodes Incorporated **A Product Line of Diodes Incorporated** | **ZXMN6A08K** ## **Package Outline Dimensions** |**DIM**
~~a~~
~~a~~
~~a~~|**Inches**
~~ee~~
~~ee~~|**Inches**
~~ee~~
~~ee~~|**Millimeters**
~~ee~~
~~eeee~~|**Millimeters**
~~ee~~
~~eeee~~|**DIM**
~~ee~~
~~es~~|**Inches**
~~eeee~~|**Inches**
~~eeee~~|**Millimeters**
~~eeee~~|**Millimeters**
~~eeee~~| |---|---|---|---|---|---|---|---|---|---| ||**Min**
~~ee~~
~~ee~~
~~ee ee~~|**Max **
~~ee~~
~~ee~~
~~ee es~~|**Min**
~~ee~~
~~ee~~
~~es ees~~|**Max **
~~ee~~
~~ees es~~||**Min**
~~ee~~|**Max **
~~ee~~|**Min**
~~ee~~|**Max **
~~ee~~| |**A**
~~a ~~
~~a~~
~~a~~
~~a~~|0.086
~~ee~~
~~ee~~
~~ee ee~~
~~ee ee~~|0.094
~~ee~~
~~ee~~
~~ee es~~
~~ee~~|2.18
~~ee~~
~~ee ~~
~~es ees~~
~~ee~~|2.39
~~ee~~
~~ees es~~
~~**e**s~~|**e**
~~ee~~
~~es~~
~~Os~~|0.090BSC
~~ee ee ~~
~~Os~~||2.29BSC
~~ee ee~~|| |**A1**
~~a~~
~~a~~
~~a~~|-
~~ee ee~~
~~ee ee~~
~~ee~~
|0.005
~~ee es~~
~~ee~~
~~es ees~~
|-
~~es ees~~
~~ee~~
~~ees~~
|0.127
~~ees es~~
~~**e**s~~
|**H**
~~es~~
~~Os~~|0.370
~~Os~~|0.410
~~s~~
~~ss~~|9.40
~~s~~
~~ss~~|10.41
~~s~~| |**b**
~~a~~
~~a~~
~~a~~|0.020
~~ee ee~~
~~ee~~
~~ae Re~~|0.035
~~ee ~~
~~es ees~~
~~Re~~|0.508
~~ee ~~
~~ees~~
~~es es~~|0.89
~~**e**s ~~
~~es~~|**L**
~~Os~~|0.055
~~Os~~|0.070
~~s~~
~~ss~~|1.40
~~s~~
~~ss~~|1.78
~~s~~| |**b2 **
~~a ~~
~~a~~
~~a~~|0.030
~~ee ~~
~~ae Re~~
~~ee~~
|0.045
~~es ees~~
~~Re~~
~~ee ee~~
|0.762
~~ees~~
~~es es~~
~~ee~~
|1.14
~~es~~
~~es~~
|**L1**
~~se~~
|0.108REF
~~s~~
~~ss~~
~~se~~
||2.74 REF
~~s~~
~~ss~~|| |**b3**

~~a~~
~~a~~
~~a~~|0.205
~~ae Re~~
~~ee~~
~~ee~~|0.215
~~Re ~~
~~ee ee~~
~~es ees~~|5.21
~~es es~~
~~ee~~
~~ees~~|5.46
~~es~~
~~es~~
~~rs~~|**L2**
~~se~~
~~e~~|0.020BSC
~~se~~
~~e~~~~**s**~~||0.508BSC|| |**c**
~~a ~~
~~a~~|0.018
~~ee ~~
~~ee~~
~~ee ee~~|0.024
~~ee ee~~
~~es ees~~
~~ee~~|0.457
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~~es~~|0.61
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~~es~~|**L3**
~~se~~
~~e~~
~~s~~|0.035
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~~s~~|0.065
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~~es~~|0.89|1.65| |**c2 **

~~a~~
~~a~~|0.018
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~~ee ee~~|0.023
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~~ee~~|0.457
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~~es~~|0.584
~~rs ~~
~~es~~
~~ds~~|**L4**
~~e~~
~~s~~
~~ds~~|0.025
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~~ds~~|0.040
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~~Qs~~|0.635|1.016| |**D**
~~es~~
~~a~~
~~a~~|0.213
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~~ee~~|0.245
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~~es~~|**L5**
~~s~~
~~es~~
~~ds~~
~~re~~|0.045
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~~es~~
~~ds~~
~~ss~~|0.060
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~~Qs~~
~~ss~~|1.14
~~es~~
~~es~~|1.52
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~~a~~
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|-
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|5.21
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~~**s**s~~|10Β°
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~~a~~
~~ee ee~~|0.250
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~~e~~|6.73
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~~ee ee~~|0.170
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~~ee~~|-| 7 of 8 ZXMN6A08K Document Revision: 2 July 2009 Β© Diodes Incorporated **www.diodes.com** **A Product Line of Diodes Incorporated** | ~~ZETEX~~ **ZXMN6A08K** ~~[sd~~ ## **Suggested Pad Layout** **==> picture [185 x 129] intentionally omitted <==** **----- Start of picture text -----**
6.2 3.0
0.244 0.118
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5.8
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0.228
0.063 0.243
2.58 mm
inches
0.101
**----- End of picture text -----**
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