# Power MOSFET, N Channel, 60 V, 3.5 A, 0.067 ohm, SOT-26, Surface Mount

![Product image](https://novapart.co/image/farnell:3943990/)

**URL**: https://novapart.co/products/ZXMN6A08E6QTA/power-mosfet-n-channel-60-v-35-a-0067-ohm-sot-26
**SKU**: ZXMN6A08E6QTA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3280
**Stock**: 10+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.1W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-26 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3.5A |
| Drain Source On State Resistance | 0.067ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943990/)

**ZXMN6A08E6Q** CS **60V N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(ON)**|**ID**<br>**TA = +25°C**|
|60V|80mΩ @ VGS=10V|3.5A|
||150mΩ @ VGS=4.5V|2.5A|



## **Features and Benefits** 

- Low On-Resistance 

- Fast Switching Speed 

- Low Gate Drive 

- Low Threshold 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

## **Description** 

This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Available** 

## **Mechanical Data** 

## **Applications** 

- DC-DC Converters 

- Power Management Functions 

- Disconnect Switches 

- Motor Control 

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SOT26<br>**----- End of picture text -----**<br>


Top View 

- Case: SOT26 

- Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020 

- Terminals: Finish - Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 **e3** 

- Weight: 0.018 grams (Approximate) 

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D<br>G<br>(3<br>S<br>Equivalent Circuit<br>**----- End of picture text -----**<br>


Pin Out - Top View 

## **Ordering Information** (Note 4 & 5) 

|**Ordering Informationg Information Information**(Note 4 & 5)|(Note 4 & 5)|||
|---|---|---|---|
|**Part Number**|**Compliance**|**Case**|**Quantity per reel**|
|ZXMN6A08E6QTA|Automotive|SOT26|3,000|



- Note: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. 

   5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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**----- Start of picture text -----**<br>
SOT26<br>6A8 = Product Type Marking Code<br>YM = Date Code Marking<br>6A8 Y or Y̅ = Year (ex: C = 2015)<br>M or M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2015 2016 2017 2018 2019 2020 2021 2022<br>——————_——————— Code C  D  E  F  G  H  I  J<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>Code 1  2  3 4  5 6 7  8 9 O N  D<br>——<br>M<br>Y<br>**----- End of picture text -----**<br>


1 of 8 **www.diodes.com** 

ZXMN6A08E6Q Document Number DS36690 Rev. 3 - 2 

March 2015 © Diodes Incorporated 

**ZXMN6A08E6Q** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|60|V|
|Gate-Source Voltage|||VGS|20|V|
|Continuous Drain Current|VGS= 10V|(Note 7)|ID|3.5|A|
|||TA= +70°C(Note 7)||2.8||
|||(Note 6)||2.8||
|Pulsed Drain Current|VGS= 10V|(Note 8)|IDM|16|A|
|Continuous Source Current (Body diode)||(Note 7)|IS|2.6|A|
|Pulsed Source Current(Bodydiode)||(Note 8)|ISM|16|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation<br>Linear Derating Factor|(Note 6)|PD|1.1<br>8.8|W<br>mW/°C|
||(Note 7)||1.7<br>13.6||
|Thermal Resistance, Junction to Ambient|(Note 6)|RθJA|113|°C/W|
||(Note 7)||73||
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



Notes: 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

7. Same as Note 6, except the device is measured at t  10 seconds. 

8. Same as Note 6, except the device is pulsed with D = 0.02 and pulse width 300µs.  The pulse current is limited by the maximum junction temperature. 

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ZXMN6A08E6Q Document Number DS36690 Rev. 3 - 2 

March 2015 © Diodes Incorporated 

imeoereoscserReaAtTED LILES. 

**ZXMN6A08E6Q** | 

**Thermal Characteristics** 

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**----- Start of picture text -----**<br>
1.2<br>10<br>R 25mm x 25mm<br>DS(on) SS 1.0 =<br>1oz FR4<br>Limited Coe SRT ST<br>0.8<br>1<br>DC<br>100m popt 1s 100ms FTIAR OSP|  | | 0.60.4 XN.<br>10ms<br>10m Single PulseT =25°C Hj] 1ms 100 / µs || NAD 0.2 IN<br>amb<br>es<= aaa 0.0 ae N\<br>100m 1 10 0 20 40 60 80 100 120 140 160<br>VDS  Drain-Source Voltage (V)  Temperature (°C)<br>Safe Operating Area Derating Curve<br>120<br>T amb =25°C 100 Single Pulse<br>100 TD| UCIT ATI TAIT Tgaii ATLPANEER ETI LAUTHasUT T =25°C llHi<br>amb<br>DP” | Sabi Seat et Hit<br>80<br>a ae a a es A CORT Ce<br>D=0.5<br>60 aam eA)eles "Aa I 10 BEUNRUH NSUTTTIOURUTHTORPETTIORPGTTVMMOUII<br>40<br>pot D=0.2 a fe et Single Pulse ce od EHH HSE -<br>ae! eoMeter TE TMT TIMID TTD TTT TTT TTT<br>20 D=0.05<br>1<br>SeniceraticeSe eeati a D=0.1 Hn TN1 rm 0See eee ewecea memes ec eet EEE<br>Sm I | WT TAT jp fe} ff<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>  Drain Current (A)<br>ID<br> Max Power Dissipation (W)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


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ZXMN6A08E6Q Document Number DS36690 Rev. 3 - 2 

March 2015 © Diodes Incorporated 

**ZXMN6A08E6Q** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|---|
|||||||||
|**Characteristic**<br>~~a~~|**Symbol**<br>~~GG~~|**Min**<br>~~GG~~|**Typ**<br>~~CO~~|**Max**|**Unit**<br>~~GS~~|**Test Condition**<br>~~(~~||
|**OFF CHARACTERISTICS**<br>~~a~~<br>~~GG~~<br>~~CO~~<br>~~GS(~~<br>~~**CO**GO~~<br>~~a~~||||||||
|Drain-Source Breakdown Voltage<br>~~GC~~<br>~~a~~|BVDSS<br>~~GC~~|60<br>~~GC~~|<br>~~GC~~<br>~~**CO**~~|<br>~~GC~~<br>~~**CO**~~|V<br>~~GC~~<br>~~GO~~|ID = 250µA, VGS = 0V<br>~~GC~~<br>~~GO~~||
|Zero Gate Voltage Drain Current<br>~~a~~<br>~~a~~|IDSS<br>~~CO~~<br>~~GG~~|<br>~~CO~~<br>~~GG~~|<br>~~**CO**~~<br>~~GO~~|0.5<br>~~**CO** ~~<br>~~GO~~|µA<br> ~~GO~~<br>~~(OO~~<br>~~GD~~|VDS = 60V, VGS = 0V<br>~~GO~~<br>~~(OO~~<br>~~(O~~||
|Gate-Source Leakage<br>~~a~~|IGSS<br>~~GG~~|<br>~~GG~~|<br>~~GO~~|100<br>~~GO~~|nA<br>~~GD~~|VGS =20V, VDS = 0V<br>~~(O~~||
|**ON CHARACTERISTICS**<br>~~a~~<br>~~GG~~<br>~~GO GD(O~~||||||||
|Gate Threshold Voltage<br>~~a~~|VGS(th)<br>~~CO~~|1<br>~~CO~~|<br>~~CO~~|<br>~~CO ~~|V<br> ~~(OO~~|ID = 250µA, VDS = VGS<br>~~(OO~~||
|Static Drain-Source On-Resistance (Note 9)<br>~~ee~~<br>~~a~~|RDS(ON)<br>~~ee~~<br>~~GG~~|<br>~~ee~~<br>~~GG~~|0.067<br>~~ee~~|0.08<br>~~ee~~|Ω<br>~~ee~~<br>~~CO~~|VGS = 10V, ID = 4.8A<br>~~ee~~||
||||0.1<br>~~ee~~<br>~~GD~~|0.15<br>~~ee~~<br>~~GO~~||VGS = 4.5V, ID = 4.2A<br>~~ee~~<br>~~CO~~||
|Forward Transconductance (Notes 9 & 10)<br>~~a~~|gfs<br>~~GG~~|<br>~~GG~~|6.6<br>~~GD~~<br>~~GD~~|<br>~~GO~~<br>~~CO~~|S<br>~~CO~~<br>~~G~~|VDS = 15V, ID = 4.8A<br>~~CO~~<br>~~GO~~||
|Diode Forward Voltage (Note 9)<br>~~a~~<br>~~GO~~|VSD<br>~~GG~~<br>~~GO~~|<br>~~GG~~<br>~~GO~~|0.88<br>~~GD~~<br>~~GO~~<br>~~GD~~|1.2<br>~~GO ~~<br>~~GO~~<br>~~CO~~|V<br> ~~CO~~<br>~~GO~~<br>~~G~~|IS = 4A, VGS = 0V, TJ= +25°C<br>~~CO~~<br>~~GO~~<br>~~GO~~||
|Reverse RecoveryTime (Note 10)|trr||19.2<br>~~GD~~|<br>~~CO ~~|ns<br> ~~G~~|IF = 1.4A, di/dt = 100A/µs,<br>TJ= +25°C<br>~~GO~~||
|Reverse RecoveryCharge (Note 10)<br>~~a~~|Qrr<br>~~a~~||30.3||nC|||
|**DYNAMIC CHARACTERISTICS(Note 10)**<br>~~—————a~~<br>~~ne~~||||||||
|Input Capacitance<br>~~Ge~~<br>~~—————~~|Ciss<br>~~Ge~~<br>~~a~~|<br>~~Ge~~<br>~~a~~|459<br>~~Ge~~|<br>~~Ge~~<br>~~ne~~|pF<br>~~Ge~~<br>~~ne~~|VDS = 40V, VGS = 0V<br>f = 1MHz<br>~~ne~~||
|Output Capacitance<br>~~—————~~|Coss<br>~~a~~|<br>~~a~~|44.2|<br>~~ne~~|pF<br>~~ne~~|||
|Reverse Transfer Capacitance<br>~~—————~~|Crss<br>~~a~~|<br>~~a~~|24.1<br>~~QO~~|<br>~~ne~~<br>~~QO~~|pF<br>~~ne~~|||
|Total Gate Charge (Note 11)<br>~~————— ~~<br>~~GO~~|Qg<br> ~~a~~<br>~~GO~~|<br>~~a~~<br>~~GO~~|3.7<br>~~GO~~<br>~~QO~~|<br>~~ne~~<br>~~GO~~<br>~~QO~~|nC<br>~~ne~~<br>~~GO~~|VGS = 4.5V<br>~~ne~~<br>~~GO~~|VDS = 30V<br>ID = 1.4A<br>~~ne~~<br>~~eee~~|
|Total Gate Charge (Note 11)<br>~~Ge~~|Qg<br>~~Ge~~|<br>~~Ge~~|5.8<br>~~QO~~<br>~~Ge~~|<br>~~QO~~<br>~~Ge~~|nC<br>~~Ge~~|VGS = 10V<br>~~eee~~||
|Gate-Source Charge (Note 11)|Qgs||1.4||nC|||
|Gate-Drain Charge (Note 11)<br>~~ee~~|Qgd<br>~~ee~~|<br>~~ee eee~~|1.9<br>~~eee~~|<br>~~eee~~|nC<br>~~eee~~|||
|Turn-On DelayTime (Note 11)<br>~~Ge~~<br>~~ee~~|tD(on)<br>~~Ge~~<br>~~ee~~|<br>~~Ge~~<br>~~ee eee~~|2.6<br>~~Ge~~<br>~~eee~~|<br>~~Ge~~<br>~~eee~~|ns<br>~~Ge~~<br>~~eee~~|VDD = 30V, VGS = 10V<br>ID = 1.5A, RG6Ω<br>~~eee~~||
|Turn-On Rise Time (Note 11)<br>~~GG~~<br>~~ee~~|tr<br>~~GG~~<br>~~ee~~|<br>~~GG~~<br>~~ee eee~~|2.1<br>~~GG~~<br>~~eee~~|<br>~~GG~~<br>~~eee~~|ns<br>~~GG~~<br>~~eee~~|||
|Turn-Off DelayTime (Note 11)<br>~~ee~~|tD(off)<br>~~ee~~|<br>~~ee eee~~|12.3<br>~~eee~~|<br>~~eee~~|ns<br>~~eee~~|||
|Turn-Off Fall Time (Note 11)<br>~~ee~~<br>~~ss~~|tf<br>~~ee~~<br>~~ss~~|<br>~~ee eee~~<br>~~ss~~|4.6<br>~~eee~~<br>~~ss~~|<br>~~eee~~<br>~~ss~~|ns<br>~~eee~~<br>~~ss~~|||



11. Switching characteristics are independent of operating junction temperatures. 

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ZXMN6A08E6Q Document Number DS36690 Rev. 3 - 2 

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**ZXMN6A08E6Q** 

## **Typical Characteristics** 

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10 TU T = 25°C 10V 5V 4.5V 10 | T = 150°C | | it ttit} Uy 10V I 5V ||<br>| Le 4V<br>oo Bo aoe<br>P|AareA neem 4V |OE 3.5V<br>1 3V<br>3.5V<br>1 CoC| Fe i llroeSS<br>ae ———— Zoo20s 2.5V<br>0.1<br>V<br>3V GS<br>A ee<br>0.1 ll VGS 0.01 TTT 2V =<br>2 LS ———<br>0.1 1 10 0.1 1 10<br>VDS  Drain-Source Voltage (V) VDS  Drain-Source Voltage (V)<br>Output Characteristics Output Characteristics<br>2.0<br>10 VDS = 10V 1.8 V GS = 10V<br>ee 1.6 ss I D = 4.8A es<br>T = 150°C 1.4 R DS(on)<br>1 = AA 1.2 a ee<br>1.0<br>T = 25°C 0.8 V GS(th)<br>0.1 pf== fia| — 0.6 a— _<br>V  = V<br>0.4 GS DS<br>0.2 ID = 250uA<br>0.01 a 0.0<br>2 3 4 5 -50 0 50 100 150<br>VGS  Gate-Source Voltage (V) Tj  Junction Temperature (°C)<br>Typical Transfer Characteristics Normalised Curves v Temperature<br>3V 3.5V 4V<br>|| || a<br>4.5V 10<br>1 Ty T = 150°C<br>jf —__________---_j —___} __}--_____| =.<br>poa yr y,<br>V<br>T = 25°C GS 1<br>EO SEE San<br>neeo 5V 0.1 aAA,4See4) T = 2  425s 5°C TP<br>0.1 LD)es———eeee—Twr |af 7V ae/anreSeeee=Se— es ——ee ee ee V GS  = 0V ee—<br>10V<br>SS 0.01 Any eee __<br>0.1 1 10 0.2 0.4 0.6 0.8 1.0 1.2<br>ID  Drain Current (A) VSD  Source-Drain Voltage (V)<br>On-Resistance v Drain Current Source-Drain Diode Forward Voltage<br> Drain-Source On-Resistance<br>DS(on)<br>R<br>  Drain Current (A)<br>  Drain Current (A)ID ID<br>GS(th)<br> and V<br>DS(on)<br>  Drain Current (A)<br>ID<br>Normalised R<br><br>  Reverse Drain Current (A)<br>ISD<br>**----- End of picture text -----**<br>


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ZXMN6A08E6Q Document Number DS36690 Rev. 3 - 2 

March 2015 © Diodes Incorporated 

**ZXMN6A08E6Q** 

**Typical Characteristics** (cont.) 

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10<br>V  = 0V<br>600 GS<br>f = 1MHz 8<br>To)ie PtFe | tT tT ET TT |<br>6<br>400<br>IE || PE ree aPTT TT rrr tT [yy]<br>C<br>ISS<br>LO ee RRR EEE<br>RH COSS 4 P| | | tt tT | PAT TT<br>200 Pe | C RSS ol a<br>2 V DS  = 15V<br>SON | TP YT<br>I  = 1.4A<br>D<br>0 1 ite" 0 7<br>1 10 0 1 2 3 4 5 6<br>VDS - Drain - Source Voltage (V) Q - Charge (nC)<br>Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge<br>  Gate-Source Voltage (V)<br>C  Capacitance (pF) GS<br>V<br>**----- End of picture text -----**<br>


## **Test Circuits** 

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ZXMN6A08E6Q Document Number DS36690 Rev. 3 - 2 

March 2015 © Diodes Incorporated 

**ZXMN6A08E6Q** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

**==> picture [467 x 436] intentionally omitted <==**

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D<br>SOT26<br>Dim  Min  Max  Typ<br>_ ono ; A1  0.013 0.10 0.05<br>E1 E A2  1.00 1.30 1.10<br>A3  0.70 0.80 0.75<br>b  0.35 0.50 0.38<br>c  0.10 0.20 0.15<br>, fo | er D  2.90 3.10 3.00<br>— .)T b LeOT ee-—~----- e -  -  0.95<br>a1 a e1  ee -  ee -  eee 1.90<br>e1 E  2.70 3.00 2.80<br>E1  1.50 1.70 1.60<br>L  0.35 0.55 0.40<br>a -  -  8°<br>- A2 ! A1 ——— a1  -  -  7°<br>A3 All Dimensions in mm<br>Seating Plane a<br>L<br>Le e 7 c ay<br>Suggested Pad Layout ggested Pad Layout ested Pad Layout yout out<br>Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.<br>—— C1<br>Dimensions Value (in mm)<br>C  2.40<br>C1  0.95<br>Y1 G Po C G  1.60<br>X  0.55<br>Y  0.80<br>Y1  3.20<br>Y<br>Oo<br>To X<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout ggested Pad Layout ested Pad Layout yout out** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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ZXMN6A08E6Q Document Number DS36690 Rev. 3 - 2 

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**ZXMN6A08E6Q** 

## **IMPORTANT NOTICE** 

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This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

ZXMN6A08E6Q Document Number DS36690 Rev. 3 - 2 

March 2015 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/ZXMN6A08E6QTA/power-mosfet-n-channel-60-v-35-a-0067-ohm-sot-26)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/zxmn6a08e6qta/mosfet-n-ch-60v-3-5a-sot-26/dp/3943990)
---

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