# Power MOSFET, N Channel, 40 V, 7.2 A, 0.05 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1251236/)

**URL**: https://novapart.co/products/ZXMN4A06K/power-mosfet-n-channel-40-v-72-a-005-ohm-to-252
**SKU**: ZXMN4A06K
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5320
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:7.2A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 9.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 7.2A |
| Drain Source On State Resistance | 0.05ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1251236/)

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## **ZXMN4A06K 40V N-channel enhancement mode MOSFET** 

## **Summary** 

**V(BR)DSS= -40V; RDS(ON) = 0.05** � **; ID = 10.9A** 

## **Description** 

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This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. 

## **Features** 

- Low on-resistance 

- Fast switching speed 

- Low threshold 

- Low gate drive 

- DPAK package 

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D<br>G<br>S<br>**----- End of picture text -----**<br>


## **Applications** 

- DC - DC converters 

- Audio output stages 

- Relay and solenoid driving 

- Motor control 

## **Ordering information** 

|**Device**|**Reel size**<br>**(inches)**|**Tape width**<br>**(mm)**|**Quantity**<br>**per reel**|
|---|---|---|---|
|ZXMN4A06KTC|13|16|2,500|



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## **Device marking** 

ZXMN 4A06 

Pinout - Top view 

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© Zetex Semiconductors plc 2005 

## **ZXMN4A06K** 

## **Absolute maximum ratings** 

|**Parameter**|**Symbol**|**Limit**|**Unit**|
|---|---|---|---|
|Drain-source voltage|VDSS|40|V|
|Gate-source voltage|VGS|�20|V|
|Continuous drain current:<br>VGS=10V; TA=25°C(b)<br>VGS=10V; TA=70°C(b)<br>VGS=10V; TA=25°C(a)|ID|10.9<br>8.7<br>7.2|A<br>A<br>A|
|Pulsed drain current(c)|IDM|35.3|A|
|Continuous source current (body diode)<br>(b)|IS|10.8|A|
|Pulsed source current (body diode)(c)|ISM|35.3|A|
|Power dissipation at TA=25°C(a)<br>Linear derating factor|PD|4.2<br>33.6|W<br>mW/°C|
|Power dissipation at TA=25°C(b)<br>Linear derating factor|PD|9.5<br>76|W<br>mW/°C|
|Power dissipation at TA=25°C(d)<br>Linear derating factor|PD|2.15<br>17.2|W<br>mW/°C|
|Operating and storage temperature range|Tj:Tstg|-55 to +150|°C|
|**Thermal resistance**||||
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Junction to ambient(a)|R�JA|30|°C/W|
|Junction to ambient(b)|R�JA|13.2|°C/W|
|Junction to ambient(d)|R�JA|58|°C/W|



## **NOTES:** 

(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. 

(b)For a device surface mounted on FR4 PCB measured at t   10 sec. 

(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum junction temperature. 

(d)For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 

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**ZXMN4A06K** 

## **Characteristics** 

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## **ZXMN4A06K** 

## **Electrical characteristics (at TA = 25°C unless otherwise stated)** 

|**Parameter**|**Symbol**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|---|---|---|---|---|---|---|
|**Static**|||||||
|Drain-source  breakdown<br>voltage|V(BR)DSS|40|||V|ID=250�A, VGS=0V|
|Zero gate voltage drain current|IDSS|||1|�A|VDS=40V, VGS=0V|
|Gate-body leakage|IGSS|||100|nA|VGS=±20V, VDS=0V|
|Gate-source threshold voltage|VGS(th)|1.0|||V|ID=250�A, VDS= VGS|
|Static drain-source on-state<br>resistance(*)|RDS(on)|||0.050<br>0.075|�<br>�|VGS=10V, ID=4.5A<br>VGS=4.5V, ID=3.2A|
|Forward transconductance(‡)|gfs||11.5||S|VDS=15V,ID=4.5A|
|**Dynamic(‡)**|||||||
|Input capacitance|Ciss||827||pF|VDS=20 V, VGS=0V,<br>f=1MHz|
|Output capacitance|Coss||133||pF||
|Reverse transfer capacitance|Crss||84||pF||
|**Switching (†) (‡)**|||||||
|Turn-on delay time|td(on)||3.2||ns|VDD=20V, ID=1A<br>RG=6.0�, VGS=10V<br>(refer to test circuit)|
|Rise time|tr||3.8||ns||
|Turn-off delay time|td(off)||23.3||ns||
|Fall time|tf||10.9||ns||
|Total gate charge|Qg||17.1||nC|VDS=20V,VGS=10V,<br>ID=4.5A<br>(refer to test circuit)|
|Gate-source charge|Qgs||2.41||nC||
|Gate-drain charge|Qgd||3.4||nC||
|**Source-drain diode**|||||||
|Diode forward voltage(*)|VSD||0.83|0.95|V|TJ=25°C, IS=4.5A,<br>VGS=0V|
|Reverse recovery time(†)|trr||16||ns|TJ=25°C, IF=4A,<br>di/dt= 100A/�s|
|Reverse recovery charge(‡)|Qrr||9||nC||



## **NOTES:** 

(*) Measured under pulsed conditions. Width �300�s. Duty cycle �2%. 

(†) Switching characteristics are independent of operating junction temperature. 

(‡) For design aid only, not subject to production testing. 

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**ZXMN4A06K** 

## **Typical charactersitics** 

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**ZXMN4A06K** 

## **Typical characteristics** 

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Current<br>[7 TTT T TT regulator 77 _<br>|<br>12V 50k Same as<br>| D.U.T<br>|<br>|— a 1 | -<br>| LJ VDS<br>o IG<br>D.U.T<br>— ° 1 ID<br>VGS<br>Gate charge test circuit<br>**----- End of picture text -----**<br>


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QG<br>-_— Te — TO<br>VG a QGS | a QGD |<br>Charge<br>—____><br>**----- End of picture text -----**<br>


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Basic gate charge waveform Gate charge test circuit<br>VDS<br>90% RD<br>| VGS VDS<br>RG VCC<br>10%<br>|<br>VGS | ; 1pS<br>td(on) tr td(off) tr<br>| h hh<br>iq t(on) t(on)<br>Switching time waveforms Switching time test circuit<br>**----- End of picture text -----**<br>


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## **ZXMN4A06K** 

## **Package details - DPAK** 

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## **Package dimensions** 

|**Dim.**|**Inches**|**Inches**|**Millimeters**|**Millimeters**|**Dim.**|**Inches**|**Inches**|**Millimeters**|**Millimeters**|
|---|---|---|---|---|---|---|---|---|---|
||**Min.**|**Max.**|**Min.**<br>|**Max.**||**Min.**|**Max.**|**Min.**|**Max.**|
|A|0.086|0.094|2.18|2.39|e|0.090 BSC||2.29 BSC||
|A1|-|0.005|-<br>|0.127|H|0.370|0.410|9.40|10.41|
|b|0.020|0.035|0.508|0.89|L|0.055|0.070|1.40|1.78|
|b2|0.030|0.045|0.762|1.14|L1|0.108 REF||2.74 REF||
|b3|0.205|0.215|5.21|5.46|L2|0.020 BSC||0.508 BSC||
|c|0.018|0.024|0.457|0.61|L3|0.035|0.065|0.89|1.65|
|c2|0.018|0.023|0.457<br>|0.584|L4|0.025|0.040|0.635|1.016|
|D|0.213|0.245|5.41|6.22|L5|0.045|0.060|1.14|1.52|
|D1|0.205|-|5.21|-|�1°|0°|10°|0°|10°|
|E|0.250|0.265|6.35|6.73|�°|0°|15°|0°|15°|
|E1|0.170|-|4.32|-|-|-|-|-|-|



**Note:** Controlling dimensions are in inches. Approximate dimensions are provided in millimeters 

|**Europe**|**Americas**|**Asia Pacific**|**Corporate Headquarters**|
|---|---|---|---|
|Zetex GmbH|Zetex Inc|Zetex (Asia Ltd)|Zetex Semiconductors plc|
|Streitfeldstraße 19|700 Veterans Memorial Highway|3701-04 Metroplaza Tower 1|Zetex Technology Park, Chadderton|
|D-81673 München|Hauppauge, NY 11788|Hing Fong Road, Kwai Fong|Oldham, OL9 9LL|
|Germany|USA|Hong Kong|United Kingdom|
|Telefon: (49) 89 45 49 49 0|Telephone: (1) 631 360 2222|Telephone: (852) 26100 611|Telephone: (44) 161 622 4444|
|Fax: (49) 89 45 49 49 49|Fax: (1) 631 360 8222|Fax: (852) 24250 494|Fax: (44) 161 622 4446|
|europe.sales@zetex.com|usa.sales@zetex.com|asia.sales@zetex.com|hq@zetex.com|



For international sales offices visit **www.zetex.com/offices** Zetex products are distributed worldwide. For details, see **www.zetex.com/salesnetwork** This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. 

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© Zetex Semiconductors plc 2005 



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- [Supplier page](https://es.farnell.com/diodes-inc/zxmn4a06k/mosfet-n-d-pak/dp/1251236)
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