# Power MOSFET, N Channel, 30 V, 8.9 A, 0.021 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:3943988RL/)

**URL**: https://novapart.co/products/ZXMN3B04N8TA/power-mosfet-n-channel-30-v-89-a-0021-ohm-soic
**SKU**: ZXMN3B04N8TA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4200
**Stock**: 200+
**Lead Time**: 162 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 8.9A |
| Drain Source On State Resistance | 0.021ohm |
| Gate Source Threshold Voltage Max | 700mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943988RL/)

## **ZXMN3B04N8** 

## **30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE** 

## **Product Summary** 

||||
|---|---|---|
|**BVDSS**|**RDS(ON)**|**ID **<br>**TA = +25°C**|
|30V|0.025Ω@VGS= 4.5V|8.9A|



## **Features** 

- Low On-Resistance 

- Fast Switching Speed 

- Low Threshold 

- Low Gate Drive 

## **Description** 

This new generation of Trench MOSFETs from Diodes Incorporated utilizes a unique structure that combines the benefits of low onresistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. 

- Low Profile SO-8 Package 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Mechanical Data** 

- Case: SO-8 

## **Applications** 

- DC-DC Converters 

- Power Management Functions 

- Disconnect Switches 

- Motor Control 

- Case Material: Molded Plastic, “Green” Molding Compound, UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.076 grams (Approximate) 

SO-8 

Top View 

Top View Pin Out Configuration Equivalent Circuit 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information **(Note 4)|**Ordering Informationg Information Information **(Note 4)|**Ordering Informationg Information Information **(Note 4)|**Ordering Informationg Information Information **(Note 4)|**Ordering Informationg Information Information **(Note 4)|
|---|---|---|---|---|
||||||
|**Part Number**|**Case**|**Reel Size**|**Tape Width**|**Quantity Per Reel**|
|ZXMN3B04N8TA|SO-8|7”|12mm|500 Units|
|ZXMN3B04N8TC|SO-8|13”|12mm|2500 Units|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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**----- Start of picture text -----**<br>
ZXMN<br>3B04<br>YYWW<br>**----- End of picture text -----**<br>


ZXMN3B04 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 17 = 2017) WW = Week Code (01 to 53) 

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## **Maximum Ratings** 

|**Maximum Ratingsgss **|**Maximum Ratingsgss **|**Maximum Ratingsgss **|**Maximum Ratingsgss **|**Maximum Ratingsgss **|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|30|V|
|Gate-Source Voltage||VGS|±12|V|
|Continuous Drain Current @VGS= 4.5V|TA= +25°C (Note 6)<br>TA= +70°C (Note 6)<br>TA= +25°C(Note 5)|ID|8.9<br>7.3<br>7.2|A|
|Pulsed Drain Current(Note 7)||IDM|45|A|
|Continuous Source Current(BodyDiode) (Note 6)||IS|4.5|A|
|Pulsed Source Current(BodyDiode) (Note 7)||ISM|45|A|
|Power Dissipation at TA= +25°C (Note 5)<br>Linear DeratingFactor||PD|2<br>16|W<br>mW/°C|
|Power Dissipation at TA= +25°C (Note 6)<br>Linear DeratingFactor||PD|3<br>24|W<br>mW/°C|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance,Junction to Ambient(Note 5)|RJA|62.5|°C/W|
|Thermal Resistance,Junction to Ambient(Note 6)|RJA|41.4||



- Notes:      5. For a device surface mounted on 50mm x 50mm FR-4 PCB with high coverage of single sided 2oz copper, in still air conditions. 6. For a device surface mounted on FR-4 PCB measured at t ≤ 10 sec. 7. Repetitive rating - 25mm x 25mm FR-4 PCB, D=0.02, pulse width 300µs - pulse width limited by maximum junction temperature. 

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**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~Ee~~|**Symbol**<br>~~Ee~~|**Min**<br>~~Ee~~|**Typ**<br>~~Ee~~|**Max**<br>~~Ee~~|**Unit**<br>~~Ee~~|**Test Condition**<br>~~Ee~~|
|**STATIC**<br>~~Ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~Ee~~|BVDSS<br>~~Ee~~|30<br>~~Ee~~<br>~~I~~|<br>~~Ee~~<br>~~I~~|<br>~~Ee~~<br>~~OO~~|V<br>~~Ee~~<br>~~OO~~|VGS= 0V,ID= 250µA<br>~~Ee~~<br>~~(~~|
|Zero Gate Voltage Drain Current<br>~~SD~~|IDSS<br>~~SD~~|<br>~~SD~~<br>~~I~~|<br>~~SD~~<br>~~I~~|0.5<br>~~SD~~<br>~~OO~~|µA<br>~~SD~~<br>~~OO~~|VDS= 30V,VGS= 0V<br>~~SD~~<br>~~(~~|
|Gate-BodyLeakage<br>~~ee~~|IGSS<br>~~ee~~|<br>~~I~~<br>~~ee~~|<br>~~I ~~<br>~~ee~~|100<br> ~~OO~~<br>~~ee~~|nA<br>~~OO ~~<br>~~ee~~|VGS= ±12V,VDS= 0V<br> ~~(~~<br>~~ee~~|
|Gate-Source Threshold Voltage<br>~~ee~~|VGS(TH)<br>~~ee~~|0.7<br>~~ee~~|<br>~~ee~~|<br>~~ee~~<br>~~_~~|V<br>~~ee~~|VDS= VGS,ID= 250µA<br>~~ee~~|
|Static Drain-Source On-Resistance (Note 8)<br>~~RE~~|RDS(ON)<br>~~RE~~|<br>~~RE~~|0.021<br>~~RE~~|0.025<br>~~RE~~<br>~~_~~|Ω<br>~~RE~~|VGS= 4.5V,ID= 7.2A<br>~~RE~~|
|||<br>~~RE~~|0.028<br>~~RE~~|0.040<br>~~RE~~<br>~~_~~||VGS= 2.5V,ID= 5.7A<br>~~RE~~|
|Forward Transconductance(Notes 8 and 10)<br>~~RE~~|gfs<br>~~RE~~|<br>~~RE~~|24<br>~~RE~~|<br>~~RE~~<br>~~_~~|S<br>~~RE~~|VDS= 15V,ID= 7.2A<br>~~RE~~|
|**DYNAMIC(Note 10)**<br>~~_~~<br>~~eeeeeeeeel~~<br>~~ne~~|||||||
|Input Capacitance<br>~~es~~|Ciss<br>~~es~~<br>~~ee~~|<br>~~es~~<br>~~ee~~|2480<br>~~es~~<br>~~ee~~|<br>~~es~~<br>~~ee~~|pF<br>~~es~~<br>~~el~~|VDS= 15V, f = 1.0MHz,<br>VGS= 0V<br>~~es~~<br>~~ne~~|
|Output Capacitance<br>~~es~~|Coss<br>~~es~~<br>~~ee~~|<br>~~es~~<br>~~ee~~|318<br>~~es~~<br>~~ee~~|<br>~~es~~<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~es~~|Crss<br>~~es~~<br>~~ee~~|<br>~~es~~<br>~~ee~~|184<br>~~es~~<br>~~ee~~|<br>~~es~~<br>~~ee~~|||
|**SWITCHING**(Notes 9 and 10)<br>~~ee ee ee ee el~~<br>~~ne~~|||||||
|Turn-On DelayTime<br>~~I~~<br>~~CR~~|tD(ON)<br>~~I~~|<br>~~I~~|9<br>~~I~~<br>~~ee~~|<br>~~I~~<br>~~ee~~|ns<br>~~A~~|VDD= 15V, RG= 6.0Ω, ID=1A,<br>VGS= 4.5V|
|Rise Time<br>~~CR~~|tR||11.5<br>~~ee~~|<br>~~ee~~|||
|Turn-Off DelayTime<br>~~CR~~|tD(OFF)||40<br>~~ee~~|<br>~~ee~~|||
|Fall Time|tF||16.6<br>~~ee~~|<br>~~ee~~|||
|Total Gate Charge<br>~~ee~~|Qg<br>~~ee~~|<br>~~ee~~|23.1<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~A~~|VDS= 15V, VGS= 4.5V, ID= 7.2A<br>~~ee~~|
|Gate-Source Charge<br>~~ee~~|Qgs<br>~~ee~~|<br>~~ee~~|4.9<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|||
|Gate-Drain Charge<br>~~ee~~|Qgd<br>~~ee~~|<br>~~ee~~|6.2<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|||
|**SOURCE-DRAIN DIODE**<br>~~ee ee A~~|||||||
|Diode Forward Voltage(Note 8)<br>~~4]~~|VSD<br>~~4]~~|<br>~~4]~~|0.85<br>~~4]~~|0.95<br>~~st~~|V<br>~~stHie~~|TJ= +25°C,IS= 8A,VGS= 0V<br>~~Hie~~|
|Reverse RecoveryTime(Note 10)<br>~~4]~~|tRR<br>~~4]~~|<br>~~4]~~|17.9<br>~~4]~~|<br>~~st~~|ns<br>~~stHie~~|di/dt = 100A/μs, IF= 3.2A,<br>TJ= +25°C<br>~~Hie~~|
|Reverse RecoveryCharge(Note 10)<br>~~4]~~|QRR<br>~~4]~~|<br>~~4]~~|10<br>~~4]~~|<br>~~st~~|nC<br>~~stHie~~||



Notes:       8. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%. 

9. Switching characteristics are independent of operating junction temperature. 

10. For design aid only, not subject to production testing. 

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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SO-8** 

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**----- Start of picture text -----**<br>
SO-8<br>Dim  Min  Max  Typ<br>E<br>a A  1.40  1.50  1.45<br>A1  0.10  0.20  0.15<br>1 b  0.30  0.50  0.40<br>c  0.15  0.25  0.20<br>D  4.85  4.95  4.90<br>E  5.90  6.10  6.00<br>b E1  3.80  3.90  3.85<br>E1<br>E0  3.85  3.95  3.90<br>h e  --  --  1.27<br>Q<br>h  -  --  0.35<br>7°<br>L   0.62  0.82  0.72<br>c<br>Q 0.60  0.70  0.65<br>A 4°± 3° All Dimensions in mm<br>G auge Plane<br>S eating Plane<br>L<br>e A1 Pat E0<br>D<br>9° (All sides)<br>R 0.1<br>45°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SO-8** 

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a X1<br>Y1<br>Y<br>ODE C X<br>**----- End of picture text -----**<br>


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Dimensions Value (in mm)<br>C 1.27<br>X  0.802<br>X1  4.612<br>Y  1.505<br>Y1  6.50<br>**----- End of picture text -----**<br>


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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2017, Diodes Incorporated 

**www.diodes.com** 

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- [Supplier page](https://es.farnell.com/diodes-inc/zxmn3b04n8ta/mosfet-n-ch-30v-8-9a-soic/dp/3943988RL)
---

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