# Power MOSFET, N Channel, 30 V, 3.2 A, 0.048 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3405223/)

**URL**: https://novapart.co/products/ZXMN3A14FTA/power-mosfet-n-channel-30-v-32-a-0048-ohm-sot-23
**SKU**: ZXMN3A14FTA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1970
**Stock**: 100+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3.2A |
| Drain Source On State Resistance | 0.048ohm |
| Gate Source Threshold Voltage Max | 2.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3405223/)

## **A Product Line of Diodes Incorporated ZXMN3A14F** [| **30V N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**Max RDS(on)**|**Max ID**<br>**TA = 25**°**C**<br>**(Note 4)**|
|30V|65mΩ@ VGS= 10V|3.2A|
||95mΩ@ VGS = 4.5V|2.6A|



## **Features and Benefits** 

- Low on-resistance 

- Fast switching speed 

- Low gate charge 

- Low threshold 

- **Totally Lead-Free & Fully RoHS compliant (Note 1)** 

- **Halogen and Antimony Free. “Green” Device (Note 2)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description and Applications** 

This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications. 

- DC - DC converters 

- Power management functions 

- Disconnect switches 

- Motor control 

## **Mechanical Data** 

- Case: SOT23 

- Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Matte Tin Finish annealed over Copper leadframe Solderable per MIL-STD-202, Method 208 

- Weight: 0.008 grams (approximate) 

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SOT23<br>**----- End of picture text -----**<br>


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S<br>D<br>G<br>Top View  Equivalent Circuit<br>Pin Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 3) 

|**Product**|**Marking**|**Reel size (inches)**|**Tape width (mm)**|**Quantity **|**per reel **|
|---|---|---|---|---|---|
|ZXMN3A14FTA|314|7|8|3000|Units|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   3. For more packaging details, go to our website at http://www.diodes.com. 

## **Marking Information** 

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314 314 = Product Type Marking Code<br>**----- End of picture text -----**<br>


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ZXMN3A14F Document Number DS33536 Rev. 2 - 2 

April 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** | **ZXMN3A14F** [ 

**Maximum Ratings** @TA = 25°C unless otherwise specified 

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|||||||
|---|---|---|---|---|---|
|Characteristic|Symbol|Value|Units|
|Drain-Source Voltage|VDSS|30|V|
|Gate-Source Voltage|VGS|±20|V|
|(Note 5)|3.9|
|Continuous Drain Current|VGS = 10V|TA = 70°C     (Note 5)|ID|3.2|A|
|(Note 4)|3.2|
|Pulsed Drain Current (Note 6)|IDM|18|A|
|Continuous Source Current (Body Diode)|(Note 5)|IS|2.3|A|
|Pulsed Source Current (Body Diode)|(Note 6)|ISM|18|A|

**----- End of picture text -----**<br>


**Thermal Characteristics** @TA = 25°C unless otherwise specified 

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|||||
|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Power Dissipation (Note 4)|1|W|
|Linear Derating Factor|PD|8|mW/°C|
|Power Dissipation (Note 5)|1.5|W|
|Linear Derating Factor|PD|12|mW/°C|
|Thermal Resistance, Junction to Ambient (Note 4)|RθJA|125|°C/W|
|Thermal Resistance, Junction to Ambient (Note 5)|RθJA|83|°C/W|
|Thermal Resistance, Junction to Leads (Note 7)|RθJL|70.44|°C/W|
|Operating and Storage Temperature Range|TJ, TSTG|-55 to +150|°C|

**----- End of picture text -----**<br>


Notes: 4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions 

5. For a device surface mounted on FR4 PCB measured at t ≤5 secs. 

6. Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300μs - pulse current limited by maximum junction temperature. 

7. Thermal resistance from junction to solder-point (at the end of the drain lead). 

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ZXMN3A14F Document Number DS33536 Rev. 2 - 2 

April 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXMN3A14F** 

## **Thermal Characteristics** 

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1 0 R DS(on) 1.0<br>Limited<br>0.8<br>1<br>0.6<br>DC<br>1s<br>100 m 100ms 0.4<br>10ms<br>1ms 0.2<br>10 m Single Pulse T =25°C 100µs<br>amb<br>0.0<br>100m 1 10 0 20 40 60 80 100 120 140 160<br>VDS  Drain-Source Voltage (V)  Temperature (°C)<br>Safe Operating Area Derating Curve<br>Tamb=25°C 100 Single Pulse<br>T =25°C<br>100 I wel ENE amb HHH<br>Pie |Palla CNSHY Coco<br>D=0.5<br>10<br>50 wale | CN<br>Single Pulse<br>D=0.2<br>WL ne Oooo Soo<br>D=0.05<br>Le alin |) PSS<br>1<br>CA Hi D=0.1 AUTCLI LI re<br>0<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>  Drain Current (A)<br>ID<br> Max Power Dissipation (W)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


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ZXMN3A14F Document Number DS33536 Rev. 2 - 2 

April 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** | **ZXMN3A14F** [ 

## **Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol **|**Min**|**Typ**|**Max **|**Unit**|**Test Condition **|
|**OFF CHARACTERISTICS**|||||||
|Drain-Source Breakdown Voltage|BVDSS|30|⎯|⎯|V|ID= 250μA,VGS= 0V|
|Zero Gate Voltage Drain Current|IDSS|⎯|⎯|1|μA|VDS= 30V,VGS= 0V|
|Gate-Source Leakage|IGSS|⎯|⎯|±100|nA|VGS=±12V,VDS= 0V|
|**ON CHARACTERISTICS**|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(th)<br>~~ee~~|1.0<br>~~ee~~|⎯<br>~~ee~~|2.2<br>~~ee~~|V<br>~~ee~~|ID= 250μA,VDS= VGS<br>~~ee~~|
|Static Drain-Source On-Resistance (Note 8)<br>~~ee~~|RDS (ON)<br>~~ee~~|⎯<br>~~ee~~|48<br>~~ee~~|65<br>~~ee~~|mΩ<br>~~ee~~|VGS= 10V,ID= 3.2A<br>~~ee~~|
||||69<br>~~ee~~|95<br>~~ee~~||VGS= 4.5V,ID= 2.6A<br>~~ee~~|
|Forward Transconductance(Notes 8 and 10)<br>~~ee~~|gfs<br>~~ee~~|⎯<br>~~ee~~|7.1<br>~~ee~~|⎯<br>~~ee~~|S<br>~~ee~~|VDS= 15V,ID= 3.2A<br>~~ee~~|
|Diode Forward Voltage(Note 8)<br>~~a~~|VSD<br>~~a~~|⎯<br>~~a~~|0.85<br>~~a~~|0.95<br>~~ee~~|V<br>~~ee~~|TJ= 25°C,IS= 2.5A,VGS= 0V<br>~~ee~~|
|Reverse RecoveryTime(Note 10)<br>~~a~~|trr<br>~~a~~|⎯<br>~~a~~|13<br>~~a~~|⎯<br>~~ee~~|ns<br>~~ee~~|TJ= 25°C, IF= 1.6A,<br>di/dt = 100A/μs<br>~~ee~~|
|Reverse RecoveryCharge(Note 10)<br>~~a~~|Qrr<br>~~a~~|⎯<br>~~a~~|7<br>~~a ~~|⎯<br> ~~ee~~|nC<br>~~ee~~||
|**DYNAMIC CHARACTERISTICS** (Note10)<br>~~SS|~~|||||||
|Input Capacitance<br>~~SSS~~|Ciss<br>~~SSS~~|⎯<br>~~SSS~~<br>~~SS~~|448<br>~~SSS~~<br>~~SS~~|⎯<br>~~SSS~~<br>~~SS~~|pF<br>~~SSS~~<br>~~SS|~~<br>~~|~~|VDS= 15V, VGS= 0V<br>f = 1.0MHz<br>~~SSS~~<br>~~|~~<br>~~|~~|
|Output Capacitance<br>~~SSS~~|Coss<br>~~SSS~~|⎯<br>~~SSS~~<br>~~SS~~|82<br>~~SSS~~<br>~~SS~~|⎯<br>~~SSS~~<br>~~SS~~|||
|Reverse Transfer Capacitance<br>~~SSS~~|Crss<br>~~SSS~~|⎯<br>~~SSS~~<br>~~SS~~|49<br>~~SSS~~<br>~~SS~~|⎯<br>~~SSS~~<br>~~SS~~|||
|Turn-On DelayTime(Note 9)<br>~~SSS~~<br>~~eee~~|tD(on)<br>~~SSS~~<br>~~eee~~|⎯<br>~~SSS~~<br>~~SS~~<br>~~eee~~|2.4<br>~~SSS~~<br>~~SS~~<br>~~eee~~|⎯<br>~~SSS~~<br>~~SS~~<br>~~eee~~|ns<br>~~SSS~~<br>~~SS |~~<br>~~eee~~<br>~~|~~|VDD= 15V, ID= 1A,<br>RG ≅6.0Ω,VGS= 10V<br>~~SSS~~<br>~~|~~<br>~~eee~~<br>~~|~~|
|Turn-On Rise Time(Note 9)<br>~~eee~~|tr<br>~~eee~~|⎯<br>~~SS~~<br>~~eee~~|2.5<br>~~SS~~<br>~~eee~~|⎯<br>~~SS~~<br>~~eee~~|||
|Turn-Off DelayTime(Note 9)<br>~~eee~~|tD(off)<br>~~eee~~|⎯<br>~~SS~~<br>~~eee~~|13.1<br>~~SS~~<br>~~eee~~|⎯<br>~~SS~~<br>~~eee~~|||
|Turn-Off Fall Time(Note 9)<br>~~eee~~|tf<br>~~eee~~|⎯<br>~~eee~~|5.3<br>~~eee~~|⎯<br>~~eee~~|||
|Total Gate Charge(Note 9)<br>~~eee~~<br>~~ee~~|Qg<br>~~eee~~<br>~~ee~~|⎯<br>~~eee~~<br>~~ee~~|8.6<br>~~eee~~<br>~~ee~~|⎯<br>~~eee~~<br>~~ee~~|nC<br>~~eee~~<br>~~|~~<br>~~ee~~|VDS=15V, VGS= 10V,<br>ID= 3.2A<br>~~eee~~<br>~~|~~<br>~~ee~~|
|Gate-Source Charge(Note 9)<br>~~ee~~|Qgs<br>~~ee~~|⎯<br>~~ee~~|1.4<br>~~ee~~|⎯<br>~~ee~~|||
|Gate-Drain Charge(Note 9)<br>~~ee~~|Qgd<br>~~ee~~|⎯<br>~~ee~~|1.8<br>~~ee~~|⎯<br>~~ee~~|||



9. Switching characteristics are independent of operating junction temperature. 

10. For design aid only, not subject to production testing. 

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ZXMN3A14F Document Number DS33536 Rev. 2 - 2 

April 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXMN3A14F** 

## **Typical Characteristics** 

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T = 25°C 10V 6V T = 150°C<br>4.5V 10V 6V<br>10 Fon Pum PPID To 10 Fn EILEEN 4V<br>3.5V<br>Poh ae 3V Ah a 3V<br>2.5V<br>hi geo N\ftot<br>1 Za 2.5V 1 WaelTT |<br>2V<br>a Be<br>V GS V GS<br>0.1 TTIHME ETAT ETT)TI 0.1 aTwe LTETITHIM TET T ) I<br>0.1 1 10 0.1 1 10<br>VDS  Drain-Source Voltage (V) VDS  Drain-Source Voltage (V)<br>Output Characteristics Output Characteristics<br>1.6<br>VDS = 10V V GS  = 10V<br>———=———_—_—— 1.4 I D  = 3.2A —a<br>a ae 1.2 R DS(on)<br>1 Toff T = 150°C AST 1.0 =<br>pf | 0.8 eR V GS(th)<br>ee) fe T = 25°C 0.6 ee V GS  = V DS<br>I  = 250uA<br>D<br>0. 1 VoCECe/| 0.4 F=-=.-——Cd =>—Cd<br>1.5 2.0 2.5 3.0 3.5 -50 0 50 100 150<br>VGS  Gate-Source Voltage (V) Tj  Junction Temperature (°C)<br>Typical Transfer Characteristics Normalised Curves v Temperature<br>|<br>2.5V 3V V GS 10<br>FEE oteeee ee eeEeeEeeee E |_|<br>=<br>1 ie 3.5V T = 150°C |_| |__|<br>00) eee ee =<br>SSS 1. AT<br>1<br>A 1 a es )_<br>4V<br>0.1 6V T = 25°C<br>T = 25 ° C 10V 0.1<br>i —_ ff<br>1 10 0.4 0.6 0.8 1. 0<br>ID  Drain Current (A)D  Drain Current (A)  Drain Current (A) VSD  Source-Drain Voltage (V)<br>  Drain Current (A)   Drain Current (A)<br>ID ID<br>GS(th)<br> and V<br>DS(on)<br>  Drain Current (A)<br>ID<br>Normalised R<br>  Reverse Drain Current (A)<br> Drain-Source On-Resistance (W)DS(on)DS(on) ISD<br>**----- End of picture text -----**<br>


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|<br>2.5V 3V V GS<br>FEE oteeee ee eeEeeEeeee E<br>3.5V<br>1 ie<br>00) eee ee<br>SSS<br>A 1<br>4V<br>0.1 6V<br>T = 25 ° C 10V<br>i —_<br>1 10<br>ID  Drain Current (A)D  Drain Current (A)  Drain Current (A)<br>On-Resistance v Drain Current<br> Drain-Source On-Resistance (W)DS(on)DS(on)<br>R<br>**----- End of picture text -----**<br>


**Source-Drain Diode Forward Voltage** 

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ZXMN3A14F Document Number DS33536 Rev. 2 - 2 

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**A Product Line of Diodes Incorporated** | **ZXMN3A14F** [| 

## **Typical Characteristics - continued** 

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10<br>VGS = 0V ID = 3.2A<br>f = 1MHz 8<br>500<br>C<br>ISS 6<br>C<br>OSS<br>4<br>C<br>RSS<br>2<br>V  = 15V<br>DS<br>0 0<br>0.1 ilie 1 s 10 ae 0 ZSGReee 2 4 6 8 10<br>VDS - Drain - Source Voltage (V) Q - Charge (nC)<br>Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge<br>C  Capacitance (pF)<br>  Gate-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


## **Test Circuits** 

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Current<br>regulator<br>QG<br>12V 0.2 50k Same as<br>D.U.T<br>VG QGS QGD<br>VDS<br>IG<br>D.U.T<br>ID<br>VGS<br>any , -a<br>Charge<br>Basic gate charge waveform Gate charge test circuit<br>VDS<br>90% RD<br>VGS VDS<br>RG VDD<br>10%<br>VGS Pulsewidth 1<br>Duty factor 0.1%<br>tr td(of ) tr td(on)<br>lt |<br>t(on) t(on)<br>Switching time waveforms Switching time test circuit<br>**----- End of picture text -----**<br>


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ZXMN3A14F Document Number DS33536 Rev. 2 - 2 

April 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** | **ZXMN3A14F** [ 

## **Package Outline Dimensions** 

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A SOT23<br>Dim  Min  Max  Typ<br>A  0.37  0.51  0.40<br>B  1.20 1.40 1.30<br>B C C  2.30  2.50  2.40<br>D  0.89  1.03  0.915<br>F  0.45 0.60 0.535<br>G 1.78 2.05 1.83<br>aa H ===5 H  2.80 3.00 2.90<br>J 0.013 0.10 0.05<br>K M K  0.903  1.10  1.00<br>K1<br>K1  -  -  0.400<br>D<br>J F G L L  0.45 0.61  0.55<br>M  0.085 0.18 0.11<br>α 0°  8°  -<br>All Dimensions in mm<br>ery EEE<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

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Y<br>Z<br>‘ace C<br>X E<br>LeKahoEP<br>**----- End of picture text -----**<br>


|**Dimensions V**|**Value (in mm)**|
|---|---|
|**Z**|**()**<br>2.9|
|**X**|0.8|
|**Y**|0.9|
|**C**|2.0|
|**E**|1.35|



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ZXMN3A14F Document Number DS33536 Rev. 2 - 2 

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**A Product Line of Diodes Incorporated** | **ZXMN3A14F** [ 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

|A.   Life support devices or systems are devices or systems which:|A.   Life support devices or systems are devices or systems which:|
|---|---|
||1. are intended to implant into the body, or|



2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated 

**www.diodes.com** 

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## Links

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- [Supplier page](https://es.farnell.com/diodes-inc/zxmn3a14fta/mosfet-n-ch-30v-3-2a-150deg-c/dp/3405223)
---

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