# Power MOSFET, N Channel, 30 V, 3.9 A, 0.048 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3943986/)

**URL**: https://novapart.co/products/ZXMN3A14FQTA/power-mosfet-n-channel-30-v-39-a-0048-ohm-sot-23
**SKU**: ZXMN3A14FQTA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2260
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3.9A |
| Drain Source On State Resistance | 0.048ohm |
| Gate Source Threshold Voltage Max | 2.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943986/)

## **ZXMN3A14FQ** 

## **30V N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**Max RDS(on)MAX**|**Max ID MAX**<br>**TA = 25****C**|
|30V|65mΩ @ VGS= 10V|3.2A|
||95mΩ @ VGS = 4.5V|2.6A|



## **Features and Benefits** 

- Low on-resistance 

- Fast switching speed 

- Low gate charge 

- Low threshold 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Description and Applications** 

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: 

## **Mechanical Data** 

   - Case: SOT23 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- DC - DC Converters 

- Power Management Functions 

- Disconnect Switches 

- Motor Control 

- Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Terminals Connections: See Diagram Below 

- Weight: 0.009 grams (Approximate) 

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SOT23<br>**----- End of picture text -----**<br>


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S<br>D<br>G<br>Top View<br>Top View<br>Pin Out<br>**----- End of picture text -----**<br>


Equivalent Circuit 

## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|
|---|---|---|---|---|
||||||
|**Product**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|ZXMN3A14FQTA|314|7|8|3,000 Units|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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**----- Start of picture text -----**<br>
314<br>**----- End of picture text -----**<br>


314 = Product Type Marking Code 

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ZXMN3A14FQ Document Number DS39100 Rev. 1 - 2 

August 2016 © Diodes Incorporated 

**ZXMN3A14FQ** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|30|V|
|Gate-Source Voltage|||VGS|±20|V|
|Continuous Drain Current|VGS= 10V|(Note 7)<br>TA= 70°C     (Note 7)<br>(Note 6)|(Note 7)<br>= 70°C     (Note 7)<br>ID|3.9<br>3.2<br>3.2|A|
|Pulsed Drain Current(Note 8)|||IDM|18|A|
|Continuous Source Current(BodyDiode) (Note 7)|||IS|2.3|A|
|Pulsed Source Current(BodyDiode) (Note 8)|||ISM|18|A|



**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation (Note 6)<br>Linear DeratingFactor|PD|1<br>8|W<br>mW/°C|
|Power Dissipation (Note 7)<br>Linear DeratingFactor|PD|1.5<br>12|W<br>mW/°C|
|Thermal Resistance,Junction to Ambient(Note 6)|RθJA|125|°C/W|
|Thermal Resistance,Junction to Ambient(Note 7)|RθJA|83|°C/W|
|Thermal Resistance,Junction to Leads(Note 9)|RθJL|70.44|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



- Notes: 6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions 

7. For a device surface mounted on FR4 PCB measured at t ≤5 secs. 

8. Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300μs - pulse current limited by maximum junction temperature. 

9. Thermal resistance from junction to solder-point (at the end of the drain lead). 

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ZXMN3A14FQ Document Number DS39100 Rev. 1 - 2 

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**ZXMN3A14FQ** 

## **Thermal Characteristics** 

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**----- Start of picture text -----**<br>
1 0 R DS(on) 1.0<br>Limited<br>|e SR RI<br>0.8<br>1<br>0.6<br>DC<br>1s<br>100 m 100ms 0.4<br>10ms<br>1ms 0.2<br>10 m Single Pulse T =25°C 100µs<br>amb<br>0.0<br>100m 1 10 0 20 40 60 80 100 120 140 160<br>VDS  Drain-Source Voltage (V)  Temperature (°C)<br>Safe Operating Area Derating Curve<br>Tamb=25°C 100 Single Pulse<br>100 Tl) Gey Tamb=25°C<br>pi |PallI [aa?] a Mee CONSNEECTT PST ETI CTT TTT CET TT“He<br>D=0.5<br>10<br>50 HTT La / A SU<br>Single Pulse<br>D=0.2<br>ee WL Zainie D=0.05 | ACeA AT So<br>1<br>cre D=0.1 B11a<br>0<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>  Drain Current (A)<br>ID<br> Max Power Dissipation (W)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


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ZXMN3A14FQ Document Number DS39100 Rev. 1 - 2 

August 2016 © Diodes Incorporated 

**ZXMN3A14FQ** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~oe~~|**Symbol**<br>~~oe~~|**Min**<br>~~oe~~|**Typ**<br>~~oe~~|**Max**<br>~~oe~~|**Unit**<br>~~oe~~|**Test Condition**<br>~~oe~~|
|**OFF CHARACTERISTICS**<br>~~oe~~|||||||
|Drain-Source Breakdown Voltage<br>~~oe~~|BVDSS<br>~~oe~~|30<br>~~oe~~|<br>~~oe~~|<br>~~oe~~|V<br>~~oe~~|ID= 250µA,VGS= 0V<br>~~oe~~|
|Zero Gate Voltage Drain Current<br>~~a~~|IDSS<br>~~a~~|<br>~~a~~|<br>~~a~~|1<br>~~a~~|µA<br>~~a~~|VDS= 30V,VGS= 0V<br>~~a~~|
|Gate-Source Leakage<br>~~a~~|IGSS<br>~~a~~|<br>~~a~~|<br>~~a~~|±100<br>~~a~~|nA<br>~~a~~|VGS=12V,VDS= 0V<br>~~a~~|
|**ON CHARACTERISTICS**<br>~~DO~~<br>~~(OQ~~|||||||
|Gate Threshold Voltage<br>~~eS~~|VGS(th)<br>~~eS~~<br>~~DO~~|1.0<br>~~eS~~<br>~~DO~~|<br>~~eS~~<br>~~DO~~|2.2<br>~~eS~~<br>~~(OQ~~|V<br>~~eS~~<br>~~(OQ~~|ID= 250µA,VDS= VGS<br>~~eS~~<br>~~(OQ~~|
|Static Drain-Source On-Resistance (Note 10)<br>~~EE~~|RDS (ON)<br>~~DO~~<br>~~EE~~|<br>~~DO~~<br>~~EE~~|48<br>~~DO~~<br>~~EE~~|65<br>~~(OQ~~<br>~~EE~~|mΩ<br>~~(OQ~~<br>~~EE~~|VGS= 10V,ID= 3.2A<br>~~(OQ~~<br>~~EE~~|
||||69<br>~~EE~~|95<br>~~EE~~||VGS= 4.5V,ID= 2.6A<br>~~EE~~|
|Forward Transconductance(Notes 10 and 12)<br>~~EE~~|gfs<br>~~EE~~|<br>~~EE~~|7.1<br>~~EE~~|<br>~~EE~~|S<br>~~EE~~|VDS= 15V,ID= 3.2A<br>~~EE~~|
|Diode Forward Voltage(Note 10)<br>~~Ne~~|VSD||0.85|0.95|V|TJ= 25°C,IS= 2.5A,VGS= 0V|
|Reverse RecoveryTime(Note 12)<br>~~Ne~~|trr||13||ns|TJ= 25°C, IF= 1.6A,<br>di/dt = 100A/µs|
|Reverse Recovery Charge (Note 12)<br>~~Ne~~|Qrr||7||nC||
|**DYNAMIC CHARACTERISTICS** (Note 12)<br>~~Ne~~<br>~~a~~|||||||
|Input Capacitance<br>~~a~~<br>~~Ce~~|Ciss||448||pF<br>~~eee~~|VDS= 15V, VGS= 0V<br>f = 1.0MHz<br>~~eee~~|
|Output Capacitance<br>~~a~~<br>~~Ce~~|Coss||82||||
|Reverse Transfer Capacitance<br>~~Ce~~<br>~~—————~~|Crss||49|<br>~~eee~~|||
|Turn-On DelayTime(Note 11)<br>~~—————~~|tD(on)||2.4|<br>~~eee~~|ns<br>~~eee~~<br>~~Oe~~|VDD= 15V, ID= 1A,<br>RG 6.0ΩVGS= 10V<br>~~eee~~|
|Turn-On Rise Time(Note 11)<br>~~—————~~|tr||2.5|<br>~~eee~~|||
|Turn-Off DelayTime(Note 11)<br>~~—————~~|tD(off)||13.1|<br>~~eee~~|||
|Turn-Off Fall Time(Note 11)<br>~~—————~~|tf<br>~~ee~~|<br>~~ee~~|5.3<br>~~ee~~|<br>~~eee~~<br>~~ee~~|||
|Total Gate Charge(Note 11)<br>~~—————~~<br>~~es~~|Qg<br>~~es~~<br>~~ee~~|<br>~~es~~<br>~~ee~~|8.6<br>~~es~~<br>~~ee~~|<br>~~eee~~<br>~~es~~<br>~~ee~~|nC<br>~~eee~~<br>~~es~~<br>~~Oe~~|VDS=15V, VGS= 10V,<br>ID= 3.2A<br>~~eee~~<br>~~es~~|
|Gate-Source Charge(Note 11)<br>~~—————~~<br>~~es~~|Qgs<br>~~es~~<br>~~ee~~|<br>~~es~~<br>~~ee~~|1.4<br>~~es~~<br>~~ee~~|<br>~~eee~~<br>~~es~~<br>~~ee~~|||
|Gate-Drain Charge(Note 11)<br>~~es~~|Qgd<br>~~es~~<br>~~ee~~|<br>~~es~~<br>~~ee~~|1.8<br>~~es~~<br>~~ee~~|<br>~~es~~<br>~~ee~~|||



12. For design aid only, not subject to production testing. 

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**ZXMN3A14FQ** 

## **Typical Characteristics** 

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**----- Start of picture text -----**<br>
T = 25°C 10V 6V T = 150°C<br>4.5V 10V 6V<br>10 FotuUI 10 Uw ACI 4V<br>3.5V<br>SEE eee 7. ee a 3V<br>Ae 3V Po OA rere<br>2.5V<br>1 tM1 peerZa0i Tt 2.5V 1 thet2294<br>VpFrit i er| oT TT TT TT Fe00 a 2V<br>0D a ee eee A] errr TT Tt TT<br>V GS V GS<br>0.1 llICI 0.1 TTL| LTTE LUT<br>0.1 1 10 0.1 1 10<br>VDS  Drain-Source Voltage (V) VDS  Drain-Source Voltage (V)<br>Output Characteristics Output Characteristics<br>1.6<br>————————_————————— VDS = 10V | V GS  = 10V |<br>1.4 I  = 3.2A<br>D<br>a ee ee es dl<br>PT 2s 1.2 | L— R DS(on)<br>1 pe T = 150 TT °C AA LAY | | 1.0 aeeae<br>pT A 0.8 I V GS(th)<br>a yy a ee<br>a A) T = 25°C ee 0.6 | V GS  = V DS |<br>I  = 250uA<br>D<br>0. 1 (Yi f7/| | | | ft 0.4 /—| Tl~~-—<br>1.5 2.0 2.5 3.0 3.5 -50 0 50 100 150<br>VGS  Gate-Source Voltage (V) Tj  Junction Temperature (°C)<br>  Drain Current (A)   Drain Current (A)<br>ID ID<br>  Drain Current (A)<br>ID<br>GS(th)<br> and V<br>DS(on)<br>Normalised R<br>**----- End of picture text -----**<br>


## **Typical Transfer Characteristics** 

**Normalised Curves v Temperature** 

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**----- Start of picture text -----**<br>
2|<br>a 2.5V 3V V GS 10<br>FEE tenedEEE PF————| tf f |ff]<br>1 Die 3.5V a T = 150°C es =<br>BES Oe eee ee }{ OE<br>1<br>| =6t i a es ey A ee ee<br>0.1 Siete| LY | | 4V 6V offA T = 25°C<br>Po————— T = 25 ° C eseee ae 10V 0.1 ;-eeIALffesff fFAL, |<br>1 10 0.4 0.6 0.8 1. 0<br>ID  Drain Current (A) VSD  Source-Drain Voltage (V)<br>On-Resistance v Drain Current Source-Drain Diode Forward Voltage<br>  Reverse Drain Current (A)<br>ISD<br> Drain-Source On-Resistance (W)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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**ZXMN3A14FQ** 

## **Typical Characteristics** (continued) 

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**----- Start of picture text -----**<br>
10<br>VGS = 0V ID = 3.2A<br>f = 1MHz 8<br>500 ri Ee<br>TTL ' W<br>C<br>ISS 6<br>a Hilieam KO<br>C<br>OSS<br>4 EERE Anan<br>C<br>RSS<br>2<br>PSI) =  Gee V  = 15V<br>DS<br>0 Ie tir = 0 Zee<br>0.1 1 10 0 2 4 6 8 10<br>VDS - Drain - Source Voltage (V) Q - Charge (nC)<br>Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge<br>C  Capacitance (pF)<br>  Gate-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**==> picture [191 x 12] intentionally omitted <==**

**----- Start of picture text -----**<br>
Capacitance v Drain-Source Voltage<br>**----- End of picture text -----**<br>


## **Test Circuits** 

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ZXMN3A14FQ Document Number DS39100 Rev. 1 - 2 

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**ZXMN3A14FQ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**==> picture [413 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
All 7°<br>H SOT23<br>GAUGE PLANE0.25 Dim  Min  Max  Typ<br>J A  0.37  0.51  0.40<br>K1 K B  1.20  1.40  1.30<br>C  2.30 2.50 2.40<br>a D  0.89 1.03 0.915<br>A M F  0.45 0.60 0.535<br>a,aSJ L ; L1 | EEEFEES G  1.78 2.05 1.83<br>H  2.80  3.00  2.90<br>J  0.013  0.10  0.05<br>ow ———— K  0.890  1.00  0.975<br>C B K1  0.903  1.10  1.025<br>L  0.45  0.61  0.55<br>t L _ | L1  0.25  0.55  0.40<br>| a M  0.085 0.150  0.110<br>D a  0°  8°  --<br>F G All Dimensions in mm<br>Lce ====<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**==> picture [137 x 123] intentionally omitted <==**

**----- Start of picture text -----**<br>
Y<br>Y1 um C<br>Aq)<br>PI X X1<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|2.0|
|**X**|0.8|
|**X1**|1.35|
|**Y**|0.9|
|**Y1**|2.9|



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ZXMN3A14FQ Document Number DS39100 Rev. 1 - 2 

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**ZXMN3A14FQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated **www.diodes.com** 

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## Links

- [View this product on Novapart](https://novapart.co/products/ZXMN3A14FQTA/power-mosfet-n-channel-30-v-39-a-0048-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/zxmn3a14fqta/mosfet-n-ch-30v-3-9a-sot-23/dp/3943986)
---

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