# Power MOSFET, Low Voltage, N Channel, 20 V, 4 A, 0.06 ohm, SOT-23, Surface Mount
**URL**: https://novapart.co/products/ZXMN2F34FHTA/power-mosfet-low-voltage-n-channel-20-v-4-a-006
**SKU**: ZXMN2F34FHTA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1350
**Stock**: 1000+
**Lead Time**: 78 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; Power Dissipation
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.4W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4A |
| Drain Source On State Resistance | 0.06ohm |
| Gate Source Threshold Voltage Max | 800mV |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:1583665/)
## **ZXMN2F34FH 20V SOT23 N-channel enhancement mode MOSFET**
**Summary**
**V(BR)DSS RDS(on) (** Ω **) ID (A)** 20 0.060 @ VGS= 4.5V 4.0 0.120 @ VGS= 2.5V 2.9 ~~——~~
## **Description**
This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.
## **Features**
- Low on-resistance
- 2.5V gate drive capability
- SOT23 package
## **Applications**
- Buck/Boost DC-DC Converters
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- Motor Control
- LED Lighting
|**Ordering information**
**Device marking**
**DEVICE**
**Reel size**
**(inches)**
ZXMN2F34FHTA
7
~~a~~|**Tape width**
**(mm)**
8|**Quantity**
**per reel**
3000|
|---|---|---|
KNB
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Top view
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## **ZXMN2F34FH**
## **Absolute maximum ratings**
|**Parameter**|**Symbol**|**Limit**|**Unit**|
|---|---|---|---|
|Drain source voltage|VDSS|20|V|
|Gate source voltage|VGS|±12|V|
|Continous Drain Current @ VGS=4.5; TA=25°C(b)
@ VGS=4.5; TA=70°C(b)
@ VGS=4.5; TA=25°C(a)|ID|4.0
3.3
3.4|A
A
A|
|Pulsed drain current(c)|IDM|18.6|A|
|Continuous source current (body diode)(b)|IS|2.1|A|
|Pulsed source current (body diode)(c)|ISM|18.6|A|
|Power dissipation at TA=25°C(a)
Linear derating factor|PD|0.95
7.6|W
mW/°C|
|Power dissipation at TA=25°C(b)
Linear derating factor|PD|1.4
11|W
mW/°C|
|Operating and storage temperature range|Tj, Tstg|-55 to 150|°C|
## **Thermal resistance**
|**Thermal resistance**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Limit**|**Unit**|
|Junction to ambient(a)|R�JA|131|°C/W|
|Junction to ambient(b)|R�JA|89|°C/W|
|Junction to lead(d)|R�JL|68|°C/W|
## **NOTES:**
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b)For a device surface mounted on FR4 PCB measured at t ≤ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 μ s - pulse width limited by maximum junction temperature.
(d)Thermal resistance from junction to solder-point (at end of drain lead).
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**ZXMN2F34FH**
## **Thermal characteristics**
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## **ZXMN2F34FH**
## **Electrical characteristics (at Tamb = 25°C unless otherwise stated)**
|**Parameter**|**Symbol**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|---|---|---|---|---|---|---|
|**Static**|||||||
|Drain-Source Breakdown
Voltage|V(BR)DSS|20|||V|ID= 250μA, VGS=0V|
|Zero Gate Voltage Drain
Current|IDSS|||1|μA|VDS= 20V, VGS=0V|
|Gate-Body Leakage|IGSS|||100|nA|VGS=±12V, VDS=0V|
|Gate-Source Threshold
Voltage|VGS(th)|0.5|0.8|1.5|V|ID= 250μA, VDS=VGS|
|Static Drain-Source
On-State Resistance(*)|RDS(on)|||0.060
0.120|Ω
Ω|VGS= 4.5V, ID= 2.5A
VGS= 2.5V, ID= 1.0A|
|Forward
Transconductance(*)(†)|gfs||7.5||S|VDS= 10V, ID= 2.5A|
|**Dynamic (†)**|||||||
|Input Capacitance|Ciss||277||pF|VDS= 10V, VGS=0V
f=1MHz|
|Output Capacitance|Coss||65||pF||
|Reverse Transfer
Capacitance|Crss||35||pF||
|**Switching (‡)(†)**|||||||
|Turn-On-Delay Time|td(on)||2.65||ns|VDD= 10V, VGS= 4.5V
ID= 1A
RG ≈ 6.0Ω|
|Rise Time|tr||4.2||ns||
|Turn-Off Delay Time|td(off)||9.9||ns||
|Fall Time|tf||5.1||ns||
|Total Gate Charge|Qg||2.8||nC|VDS= 10V, VGS= 4.5V
ID= 2.5A|
|Gate-Source Charge|Qgs||0.61||nC||
|Gate Drain Charge|Qgd||0.63||nC||
|**Source-drain diode**|||||||
|Diode Forward Voltage(*)|VSD||0.73|1.2|V|IS= 1.25A, VGS=0V|
|Reverse recovery time(†)|trr||6.5||ns|Tj=25oC, IF=1.65A
di/dt=100A/�s|
|Reverse recovery charge(†)|Qrr||1.4||nC||
## **NOTES:**
(*) Measured under pulsed conditions. Pulse width ≤ 300 μ s; duty cycle ≤ 2%.
(†) For design aid only, not subject to production testing.
(‡) Switching characteristics are independent of operating junction temperature.
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**ZXMN2F34FH**
## **Typical characteristics**
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**ZXMN2F34FH**
## **Typical characteristics**
## **Test circuits**
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## **ZXMN2F34FH**
## **Package outline - SOT23**
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E
e
b e1
3 leads
D
L1 E1
A
A1 L c
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|**Dim.**|**Millimeters**|**Millimeters**|**Inches**|**Inches**|**Dim.**|**Millimeters**|**Millimeters**|**Inches**|**Inches**|
|---|---|---|---|---|---|---|---|---|---|
||**Min.**|**Max.**|**Min.**|**Max.**||**Min.**|**Max.**|**Min.**|**Max.**|
|A|-|1.12|-|0.044|e1|1.90 NOM||0.075 NOM||
|A1|0.01|0.10|0.0004|0.004|E|2.10|2.64|0.083|0.104|
|b|0.30|0.50|0.012|0.020|E1|1.20|1.40|0.047|0.055|
|c|0.085|0.20|0.003|0.008|L|0.25|0.60|0.0098|0.0236|
|D|2.80|3.04|0.110|0.120|L1|0.45|0.62|0.018|0.024|
|e|0.95 NOM||0.037 NOM||-|-|-|-|-|
**Note:** Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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**ZXMN2F34FH**
## **Definitions**
## **Product change**
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders.
## **Applications disclaimer**
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances.
## **Life support**
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
## **Reproduction**
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned.
## **Terms and Conditions**
All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.
## **Quality of product**
Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: **www.zetex.com/salesnetwork** Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.
## **ESD (Electrostatic discharge)**
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced.
## **Green compliance**
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions.
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives.
**Product status key:**
“Preview” Future device intended for production at some point. Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued
## **Datasheet status key:**
“Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice.
## **Zetex sales offices**
**Europe Americas Asia Pacific Corporate Headquarters** Zetex GmbH Zetex Inc Zetex (Asia Ltd) Zetex Semiconductors plc Kustermann-park 700 Veterans Memorial Highway 3701-04 Metroplaza Tower 1 Zetex Technology Park, Chadderton Balanstraße 59 Hauppauge, NY 11788 Hing Fong Road, Kwai Fong Oldham, OL9 9LL D-81541 München USA Hong Kong United Kingdom Germany Telefon: (49) 89 45 49 49 0 Telephone: (1) 631 360 2222 Telephone: (852) 26100 611 Telephone: (44) 161 622 4444 Fax: (49) 89 45 49 49 49 Fax: (1) 631 360 8222 Fax: (852) 24250 494 Fax: (44) 161 622 4446 europe.sales@zetex.com usa.sales@zetex.com asia.sales@zetex.com hq@zetex.com
© 2008 Published by Zetex Semiconductors plc
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© Zetex Semiconductors plc 2008
## Links
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---
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