# Power MOSFET, N Channel, 200 V, 1.5 A, 0.75 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:4318664/)

**URL**: https://novapart.co/products/ZXMN20B28KTC/power-mosfet-n-channel-200-v-15-a-075-ohm-to-252
**SKU**: ZXMN20B28KTC
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2390
**Stock**: 10+
**Lead Time**: 316 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.5A |
| Drain Source On State Resistance | 0.75ohm |
| Gate Source Threshold Voltage Max | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4318664/)

**ZXMN20B28K** 

**Green** 

## **200V N-CHANNEL ENHANCEMENT MODE MOSFET** 

**Product Summary Features and Benefits ID**  100% Unclamped Inductive Switch (UIS) test in production **BVDSS RDS(ON) MAX TA = 25**  **C**  High avalanche energy pulse withstand capability  Low gate drive voltage (Logic level capable) 200V 750mΩ  @ VGS = 10V 2.3A  Low input capacitance 780mΩ  @ VGS = 5V 2.2A  Low on-resistance ~~—~~  Fast switching speed  **Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Description and Applications**  **Halogen and Antimony Free. “Green” Device (Note 3)** This MOSFET features low on-resistance, fast switching and a high  **For automotive applications requiring specific change** avalanche withstand capability, making it ideal for high-efficiency **control (i.e. parts qualified to AEC-Q100/101/200, PPAP** power management applications. **capable, and manufactured in IATF 16949 certified facilities),** 

   - **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/** 

- SLIC line drivers for VoIP applications 

- Transformer driving switch 

- Power management functions 

- Motor control 

- Uninterrupted power supply 

## **Mechanical Data** 

- Case: TO252 

- Case Material: Molded Plastic “Green” Molding Compound, UL Flammability Classification Rating 94V-0 (Note 1) 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections: See Diagram 

- Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

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 Weight: 0.33 grams (Approximate)<br>D<br> TO252  D<br>G<br>D<br>|. &<br>S<br>G Top View  S<br>Top View Pin-Out Equivalent Circuit<br> Information  (Note 4)<br>Part Number  Case  Packaging<br>ZXMN20B28KTC  TO252 (DPAK) 2,500/Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

- Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

      2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

      4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

ZXMN = Product Type Marking Code, Line 1 20B28 = Product Type Marking Code, Line 2 YYWW = Date Code Marking YY = Year (ex: 21 = 2021) WW = Week (01 to 53) 

**ZXMN 20B28 YYWW** ~~-~~ 

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ZXMN20B28K Document Number DS31984 Rev. 2 - 2 

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**www.diodes.com** 

**ZXMN20B28K** 

## **Maximum Ratings** (@TA = 25°C, unless otherwise specified) 

|**Maximum Ratingsgss** (@TA = 25°C, unless otherwise specified)A = 25°C, unless otherwise specified)= 25°C, unless otherwise specified)|**Maximum Ratingsgss** (@TA = 25°C, unless otherwise specified)A = 25°C, unless otherwise specified)= 25°C, unless otherwise specified)|**Maximum Ratingsgss** (@TA = 25°C, unless otherwise specified)A = 25°C, unless otherwise specified)= 25°C, unless otherwise specified)|(@TA = 25°C, unless otherwise specified)A = 25°C, unless otherwise specified)= 25°C, unless otherwise specified)|||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol **|**Value**|**Unit**|
|Drain-Source voltage<br>~~—————~~|||VDSS<br>~~—————~~|200<br>~~—————~~|V<br>~~—————~~|
|Gate-Source voltage<br>~~—————~~|||VGS<br>~~—————~~|20<br>~~—————~~|V<br>~~—————~~|
|SinglePulsedAvalancheEnergy<br>~~—————~~||(Note10)<br>~~—————~~|EAS<br>~~—————~~|73<br>~~—————~~|mJ<br>~~—————~~|
|Single Pulsed Avalanche Current||(Note 10)|IAS|5.5|A|
|Repetitive Avalanche Energy||(Note 7)|EAR|4.5|mJ|
|RepetitiveAvalanche Current<br>~~jfff~~||(Note7)<br>~~ff~~|IAR<br>~~ff~~|5.5<br>|A<br>|
|Continuous Drain current<br>~~jf~~|VGS= 10V<br>~~jfff~~|(Note 6)<br>TA= 70°C (Note 6)<br>(Note 5)<br>~~ff~~|ID<br>~~ffff~~|2.3<br>1.8<br>1.5<br>~~ff~~|A<br>~~ff~~|
|Pulsed Drain current <br>~~jf~~|VGS= 10V<br>~~jfff~~|(Note 7)<br>~~ff~~|IDM<br>~~ffff~~|17.3<br>~~ff~~|A<br>~~ff~~|
|Continuous Source current(Bodydiode) <br>~~jfff~~<br>~~es~~||(Note 5)<br>~~ff~~<br>~~es~~|IS<br>~~ff~~<br>~~es~~|2.3<br><br>~~es~~|A<br><br>~~es~~|
|Pulsed Source current(Bodydiode)  <br>~~jf ff~~<br>~~es~~||(Note 7)<br>~~ff~~<br>~~es~~|ISM<br>~~ff~~<br>~~es~~|17.3<br><br>~~es~~|A<br><br>~~es~~|



## **Thermal Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)°C, unless otherwise specified.)C, unless otherwise specified.)|**Thermal Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)°C, unless otherwise specified.)C, unless otherwise specified.)|(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)°C, unless otherwise specified.)C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power dissipation<br>Linear derating factor|(Note 5)|PD|4.3<br>34.4|W<br>mW/°C|
||(Note 6)||10.2<br>76.0||
||(Note 9)||2.2<br>17.4||
|Thermal Resistance, Junction to Ambient|(Note 5)|RJA|29.1|°C/W|
||(Note 6)||12.3||
||(Note 9)||57.3||
|Thermal Resistance, Junction to Lead|(Note 8)|RJL|1.15|°C/W|
|Operatingand storage temperature range||TJ,TSTG|-55 to 150|°C|



Notes: 5. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

6. Same as note 2, except the device is measured at t  10 sec. 

7. Same as note 2, except the device is operating in a repetitive state with pulse width and duty cycle limited by maximum junction temperature. 

8. Thermal resistance from junction to solder-point (at the end of the drain lead). 

9. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with the high coverage single sided 1oz copper, in still air conditions; the device Is measured when operating in a steady-state condition. 

10. UIS in production with L = 4.83mH, IAS = 5.5A, RG = 25Ω, VDD = 100V, starting TJ = 25°C. 

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**ZXMN20B28K** 

t meoRePoRe#éeAT 

## **Thermal Characteristics** 

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10 RDS(on) 10 RDS(on)<br>| Limited eee . Limited aes<br>aaa OS SS ESE OS SS<br>1 1<br>DC DC<br>100m eet)TAPS 1s TTe/8 neANTES; | 100m PrPT 1s ATTNKS||<br>100ms 100ms<br>10m po Tamb=25°C 10ms 1ms | fA | | OS 10m pT Tamb=25°C 10ms1ms ai...vary i  ae<br>25mm x 25mm  50mm x 50mm<br>1oz FR4 100µs 2oz FR4 100µs<br>1m a HE tfvisA 1m agee<br>1 10 100 1 10 100<br>VDS  Drain-Source Voltage (V) VDS  Drain-Source Voltage (V)<br>Safe Operating Area Safe Operating Area<br>60 35<br>50 25mm x 25mm T amb =25 ° C MOa a 7a aa 30 50mm x 50mm  T amb =25°C Tooi mgtoooa<br>1oz FR4 Aa AA 25 2oz FR4 TT<br>40 1a”Af MINCETN ra Aame<br>D=0.5 ACe ly HAy/ 20 CCCCfL-CUeTA y/ y eee<br>30 D=0.5<br>Bill / 15 Lerner TTT | WY |<br>20 PCNFECHA ConeT<br>D=0.2 LE EL ge D=0.1 re 10 D=0.2 LUT TTI a ar | D=0.1 LH<br>10 SeerETEeam RH DEOZ“lll D=0.05 lll 5 HTAEeega D=0.05 TTTnll<br>Single Pulse Single Pulse<br>0 S oer eetTLtT HNll 0 Sacereeemeeertt e LU ee THmill<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br> Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Transient Thermal Impedance<br>|PNT TTT TT TTT TT Single Pulse nil) Ly 4 |<br>ary T amb =25°C oe ee 50mm x 50mm<br>100 2oz FR4<br>HilSe 50mm x 50mm  3 |<br>2oz FR4 25mm x 25mm<br>1oz FR4<br>CCC iil) a NC<br>SCAT Re 2 x \<br>10<br>SET UN CMS NN<br>PO TTT Spl 1 ~~<br>I 25mm x 25mm  0 ae<br>1oz FR4<br>1 HHHou sw HH = 0 LL ET [PS] ~Sa<br>100µ 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 120 140 160<br>Pulse Width (s)  Temperature (°C)<br>Pulse Power Dissipation Derating Curve<br>  Drain Current (A)   Drain Current (A)<br>ID ID<br> Thermal Resistance (°C/W) Thermal Resistance (°C/W)<br> Max Power Dissipation (W)  Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


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**ZXMN20B28K** 

**Electrical Characteristics** (@TA = 25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = 25°C, unless otherwise specified.)A = 25°C, unless otherwise specified.)= 25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = 25°C, unless otherwise specified.)A = 25°C, unless otherwise specified.)= 25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = 25°C, unless otherwise specified.)A = 25°C, unless otherwise specified.)= 25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = 25°C, unless otherwise specified.)A = 25°C, unless otherwise specified.)= 25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = 25°C, unless otherwise specified.)A = 25°C, unless otherwise specified.)= 25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = 25°C, unless otherwise specified.)A = 25°C, unless otherwise specified.)= 25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = 25°C, unless otherwise specified.)A = 25°C, unless otherwise specified.)= 25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
|~~a~~<br>~~(ODGO~~|||||||
|**Characteristic**<br>~~a~~|**Symbol**|**Min**<br>~~(OD~~|**Typ**<br>~~(OD~~|**Max**<br>~~(OD~~|**Unit**<br>~~GO~~|**Test Condition**|
|**OFF CHARACTERISTICS** **(Note 11)**<br>~~a~~<br>~~(OD GO~~|||||||
|Drain-Source Breakdown Voltage<br>~~GG~~|BVDSS<br>~~GG~~<br>~~I~~|200<br>~~GG~~<br>~~GO~~|<br>~~GG~~<br>~~ID~~|<br>~~GG~~<br>~~(OO~~|V<br>~~GG~~<br>~~(I~~|ID= 250A, VGS = 0V<br>~~GG~~|
|Zero Gate Voltage Drain Current<br>~~nD~~|IDSS<br>~~nD~~<br>~~I~~<br>~~I~~|<br>~~nD~~<br>~~GO~~<br>~~I~~|<br>~~nD~~<br>~~ID~~<br>~~ID~~|500<br>~~nD~~<br>~~(OO~~<br>~~(OO~~|nA<br>~~nD~~<br>~~(I~~<br>~~(OO~~|VDS = 200V, VGS = 0V<br>~~nD~~|
|Gate-Source Leakage<br>~~nD~~|IGSS<br>~~I ~~<br>~~nD~~<br>~~I~~|<br> ~~GO~~<br>~~nD~~<br>~~I~~|<br>~~ID ~~<br>~~nD~~<br>~~ID~~|100<br> ~~(OO~~<br>~~nD~~<br>~~(OO~~|nA<br>~~(I~~<br>~~nD~~<br>~~(OO~~|VGS =20V, VDS = 0V<br>~~nD~~|
|**ON CHARACTERISTICS** **(Note 11)**<br>~~I~~<br>~~ID(OO~~|||||||
|Gate Threshold Voltage<br>~~es ee~~|VGS(th)<br>~~ee~~|1<br>~~ee~~|1.6<br>~~ee~~|2.5<br>~~ee~~|V<br>~~ee~~|ID = 250A, VDS = VGS|
|Static Drain-Source On-Resistance (Note 12)<br>~~es ee~~|RDS (ON)<br>~~ee~~|<br>~~ee~~|0.650<br>~~ee~~|0.750<br>~~ee~~|Ω<br>~~ee~~<br>~~GOO~~|VGS = 10V, ID = 2.75A|
||||0.670<br>~~ee~~<br>~~GOO~~|0.780<br>~~ee~~<br>~~GOO~~||VGS = 5V, ID = 2.75A|
|Forward Transconductance (Notes 12 & 13)<br>~~es ee~~<br>~~GD~~|gfs<br>~~ee~~<br>~~GD~~|<br>~~ee~~<br>~~GD~~|6.13<br>~~ee~~<br>~~GD~~<br>~~GOO~~|<br>~~ee~~<br>~~GD~~<br>~~GOO~~|S<br>~~ee~~<br>~~GD~~<br>~~GOO~~|VDS = 30V, ID = 2.75A<br>~~GD~~|
|Diode Forward Voltage (Note 12)|VSD||0.860<br>~~GOO~~|0.950<br>~~GOO~~|V<br>~~GOO~~|IS = 5.5A, VGS= 0V|
|Reverse recoverytime(Note 13)<br>~~tO~~|trr<br>~~tO~~|<br>~~tO~~|177<br>~~tO~~|<br>~~tO~~|ns<br>~~tO~~|IS = 6.5A, VGS= 0V,<br>di/dt = 100A/s<br>~~tO~~|
|Reverse recovery charge (Note 13)<br>~~tO~~|Qrr<br>~~tO~~|<br>~~tO~~|1.4<br>~~tO~~|<br>~~tO~~|C<br>~~tO~~||
|**DYNAMIC CHARACTERISTICS(Note 13)**<br>~~a~~|||||||
|Input Capacitance<br>~~aee~~|Ciss<br>~~ee~~|<br>~~ee ee~~|358<br>~~ee~~|<br>~~ee~~|pF<br>~~ee~~|VDS = 25V, VGS = 0V<br>f = 1MHz<br>~~ee~~|
|Output Capacitance<br>~~aee~~|Coss<br>~~ee~~|<br>~~ee ee~~|50<br>~~ee~~|<br>~~ee~~|pF<br>~~ee~~||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~<br>~~oe~~|<br>~~ee ee~~<br>~~ee~~|6.1<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|pF<br>~~ee~~<br>~~ee~~||
|Total Gate Charge<br>~~ee~~<br>~~ee~~|Qg<br>~~ee~~<br>~~ee~~<br>~~oe~~|<br>~~ee ee~~<br>~~ee~~<br>~~ee~~|8.1<br>~~ee~~<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~<br>~~ee~~|VDS = 120V, VGS= 5V<br>ID= 6.5A<br>~~ee~~<br>~~ee~~<br>~~eee~~|
|Gate-Source Charge<br>~~ee~~|Qgs<br>~~ee~~<br>~~oe~~|<br>~~ee~~<br>~~ee~~|1.4<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~||
|Gate-Drain Charge<br>~~ee~~<br>~~es~~<br>~~———~~|Qgd<br>~~ee~~<br>~~oe~~<br>~~es~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~<br>~~ee~~|3.9<br>~~ee~~<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~eee~~|nC<br>~~ee~~<br>~~ee~~<br>~~eee~~||
|Turn-On Delay Time (Note 14)<br>~~es~~<br>~~es~~<br>~~———~~|tD(on)<br>~~oe ~~<br>~~es~~<br>~~es~~<br>~~ee~~|<br> ~~ee~~<br>~~es~~<br>~~ee~~|17.8<br>~~ee ~~<br>~~es~~<br>~~ee~~|<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~eee~~|ns<br>~~ee~~<br>~~es~~<br>~~eee~~|VDD = 100V, VGS = 5V<br>ID = 6.5A, RG25<br>~~eee~~|
|Turn-On Rise Time (Note 14)<br>~~es~~<br>~~———~~|tr<br>~~es~~<br>~~ee~~|<br>~~ee~~|76.9<br>~~ee~~|<br>~~ee~~<br>~~eee~~|ns<br>~~eee~~||
|Turn-Off Delay Time (Note 14)<br>~~es ~~<br>~~———~~|tD(off)<br>~~es~~<br> ~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|44.7<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~eee~~<br>~~ee~~|ns<br>~~eee~~||
|Turn-Off Fall Time (Note 14)<br> <br>~~———~~<br>~~ee~~|tf<br> ~~ee~~<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~<br>~~ee~~|57.1<br>~~ee~~<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~eee~~<br>~~ee~~<br>~~ee~~|ns<br>~~eee~~<br>~~ee~~||



12.  Measured under pulsed conditions. Pulse width  300s; duty cycle  2% 

13.  For design aid only, not subject to production testing. 

14. Switching characteristics are independent of operating junction temperatures. 

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## tu coRPORATED~ 

## **Typical Characteristics** 

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**----- Start of picture text -----**<br>
T = 25°C 10 T = 150 ° C 10V<br>10 A ai 10V 3.5V PU 3V<br>Se ——— === — a 3V Ath tf Etttt 2.5V<br>Pa em 2.5V 1 Him alin<br>1 2V<br>me rt 0.1 HalEl VGS<br>0.1<br>2V<br>VGS 1.5V<br>0.01 eea  Eee 0.01 |es Til<br>0.1 1 10 0.1 1 10<br>VDS  Drain-Source Voltage (V) VDS  Drain-Source Voltage (V)<br>Output Characteristics Output Characteristics<br>Qe VDS = 10V ee 2.42.2 eea | V GS  = 10V Z|y<br>—————ee 2.0 a eee I D  = 2.75A J7 |<br>rs R |<br>1.8 DS(on)<br>rr a“7 — ———esae<br>T = 150°C Wz 1.6 }—_______|____f———<br>1 POY$F  __ it 1.4 a es e eeee<br>_—— TT T = 25°C 1.2 a4 VGS = VDS<br>1.0 ID = 250uA<br>i ee a<br>0.8<br>0.6 V<br>er ee | GS(th)<br>0.1 | ff. | 0.4 aSSee<br>2 3 -50 0 50 100 150<br>VGS  Gate-Source Voltage (V) Tj  Junction Temperature (°C)<br>Typical Transfer Characteristics Normalised Curves v Temperature<br>10<br>=aEE 2V St== 2.5V T = 25°C 10 asam<br>a eee<br>Or 1 T = 150°C ay<br>ME etTTTCi 3V _ Ff——=__—<br>Se — 3.5V 0.1 Poff<br>| es ey [Ay] T = 25°C<br>1 Eeeee—— eeeee;eo a eee (/ V10VGS 0.01 eSeepfSf_—E—E—eE—Ae eeeeeeff —E—E_—EE—— Vgs = 0V a<br>SSSFT tie 1 Pee 1 Pd 1E-3 A P ne<br>0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.0<br>ID  Drain Current (A) VSD  Source-Drain Voltage (V)<br>On-Resistance v Drain Current Source-Drain Diode Forward Voltage<br>  Drain Current (A)   Drain Current (A)<br>ID ID<br>GS(th)<br> and V<br>DS(on)<br>  Drain Current (A)<br>ID<br>Normalised R<br>)<br>  Reverse Drain Current (A)<br> Drain-Source On-Resistance ( ISD<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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## **Typical Characteristics** (continued) 

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10<br>800 V GS = 0V<br>ia, | | |] PTT TTT TT TTT<br>LLU f = 1MHz 8 TT<br>600<br>PUTTIN TENNNS ETUT CISS || 6 HtBREEtH<br>IR NTI A<br>400 PTI TTT pa<br>4<br>200 PUTTPLB C RSS | CPtPa INUIT Set COSS 2 SERREan aeAne VDS = 120V<br>0 PEMPUTTIN [TEU] SseUATE | NINSSMUTINGd 0 YTAREneLE ID = 6.5A<br>0.01 0.1 1 10 100 0 2 4 6 8 10 12 14<br>VDS - Drain - Source Voltage (V) Q - Charge (nC)<br>Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge<br>C  Capacitance (pF)   Gate-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


## **Test Circuits** 

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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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TO252 (DPAK)<br>E<br>A<br>b3<br>7°±1°<br>c<br>L3<br>Jr mee<br>D<br>A2<br>H<br>L4<br>e<br>b(3x)<br>a b2(2x)<br>0.508<br>Gauge Plane<br>E1 D1 Seating Plane<br>L<br>A1<br>2.74REF<br>em<br>a<br>**----- End of picture text -----**<br>


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TO252 (DPAK)<br>Dim Min  Max  Typ<br>A  2.19 2.39 2.29<br>A1  0.00  0.13  0.08<br>=== A2  0.97  1.17  1.07<br>b 0.64  0.88 0.783<br>b2  0.76  1.14  0.95<br>b3 5.21  5.46 5.33<br>c  0.45  0.58 0.531<br>D  6.00  6.20  6.10<br>D1  5.21  -  -<br>e  -  -  2.286<br>E  6.45  6.70  6.58<br>E1  4.32  -  -<br>H  9.40 10.41 9.91<br>L  1.40 1.78 1.59<br>oe L3 0.88 1.27  1.08<br>L4  0.64  1.02  0.83<br>a 0°  10°  -<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**TO252 (DPAK)** 

**==> picture [123 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
a nn X1<br>Y1<br>Y2<br>C<br>Y<br>X<br>**----- End of picture text -----**<br>


**==> picture [107 x 67] intentionally omitted <==**

**----- Start of picture text -----**<br>
Dimensions  Value (in mm)<br>C  4.572<br>X  1.060<br>X1  5.632<br>Y  2.600<br>Y1  5.700<br>Y2  10.700<br>**----- End of picture text -----**<br>


7 of 8 **www.diodes.com** 

ZXMN20B28K Document Number DS31984 Rev. 2 - 2 

November 2021 © Diodes Incorporated 

**ZXMN20B28K** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products f or their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2021 Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

ZXMN20B28K Document Number DS31984 Rev. 2 - 2 

November 2021 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/ZXMN20B28KTC/power-mosfet-n-channel-200-v-15-a-075-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/zxmn20b28ktc/mosfet-n-ch-200v-1-5a-to-252/dp/4318664)
---

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