# Power MOSFET, N Channel, 100 V, 6.4 A, 0.125 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1471147/)

**URL**: https://novapart.co/products/ZXMN10A25KTC/power-mosfet-n-channel-100-v-64-a-0125-ohm-to-252
**SKU**: ZXMN10A25KTC
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4100
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:6.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.125ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissip

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 9.85W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6.4A |
| Drain Source On State Resistance | 0.125ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1471147/)

**A Product Line of Diodes Incorporated** ~~|ZETEX~~ **ZXMN10A25K** ~~a~~ 

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## **100V N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|---|
|**V(BR)DSS**<br>**RDS(ON)**<br>**Package**<br>**Max ID **<br>**TA = +25°C**<br>100V<br>125mΩ@ VGS= 10V<br>TO252<br>(DPAK)<br>6.4A<br>150mΩ@ VGS= 6V<br>5.8A||||
|**V(BR)DSS**|**RDS(ON)**|**Package**|**Max ID **<br>**TA = +25°C**|
|100V|125mΩ@ VGS= 10V|TO252<br>(DPAK)|6.4A|
||150mΩ@ VGS= 6V||5.8A|



## **Features** 

- Low On-Resistance 

- Fast Switching Speed 

- Low Gate Drive 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description** 

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Applications** 

- DC-DC Converters 

- Power Management Functions 

## **Mechanical Data** 

   - Case: TO252 (DPAK) 

   - Case Material: Molded Plastic, “Green” Molding Compound.  UL Flammability Classification Rating 94V-0  (Note 1) 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.33 grams (approximate) 

- Disconnect Switches 

- Motor Control 

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D<br>TO252<br>D<br>G S<br>Top View<br>Pin Out -Top View  Equivalent Circuit<br>**----- End of picture text -----**<br>


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TO252<br>**----- End of picture text -----**<br>


**Ordering Information** (4 & 5) **Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel** ZXMN10A25KTC ZXMN10A25 13 16 2,500 ~~——~~ Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. ~~eS~~ 

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For Packaging Details, go to our website at http://www.diodes.com. 

5. Products with Q-suffix are automotive grade. Automotive products are electrical and thermal the same as the commercial, except where specified. 

## **Marking Information** 

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ZXMN<br>10A25<br>**----- End of picture text -----**<br>


ZXMN10A25 = Product Type Marking Code 

1 of 8 **www.diodes.com** 

ZXMN10A25K Document number: DS33569 Rev. 3 - 2 

July 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXMN10A25K** | 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source voltage|||VDSS|100|V|
|Gate-Source voltage|||VGS|±20|V|
|Continuous Drain current|VGS= 10V|(Note7)|ID|6.4|A|
|||TA= +70°C(Note 7)||5||
|||(Note 6)||4.2||
|Pulsed Drain current||(Note 8)|IDM|21|A|
|Continuous Source current(Bodydiode)||(Note 7)|IS|10|A|
|Pulsed Source current(Bodydiode)||(Note 8)|ISM|21|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power dissipation<br>Linear derating factor|(Note 6)|PD|4.25<br>34|W<br>mW/°C|
||(Note 7)||9.85<br>78.7||
||(Note 9)||2.11<br>16.8||
|Thermal Resistance, Junction to Ambient|(Note 6)|RθJA|29.4|°C/W|
||(Note 7)||12.7||
||(Note 9)||59.1||
|Thermal Resistance,Junction to Lead|(Note 10)|RθJL|1.43||
|Operatingand storage temperature range||TJ,TSTG|-55 to 150|°C|



- Notes: 6. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

   7. For a device surface mounted on FR4 PCB measured at t ≤ 10 sec. 

8. Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D = 0.02 and pulse width 300µs.  The pulse current is limited by the maximum junction temperature. 9. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

10. Thermal resistance from junction to solder-point (at the end of the drain lead). 

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ZXMN10A25K Document number: DS33569 Rev. 3 - 2 

July 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXMN10A25K** 

## **Thermal Characteristics** 

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**----- Start of picture text -----**<br>
R R<br>1 0 DS(on) DS(on)<br>Limit 10 Limit<br>1 eT IN| /) TONSA aN OES ON I<br>1<br>DC DC<br>1s 1s<br>100 m 100ms 100m 100ms<br>10ms 10ms<br>pe 25mm x 25mm Tamb=25°C SSHNIN 1ms SES NL 50mm x 50mm Tamb=25°C LLRe 1ms S|Sa<br>10 m 1oz FR4 me 100µs mi! 10m 2oz FR4 BT 100µs |<br>1 10 100 1 10 100<br>VDS  Drain-Source Voltage (V) VDS  Drain-Source Voltage (V)<br>Safe Operating Area Safe Operating Area<br>60 30<br>f Tamb=25 ° C I no an a T amb =25°C 1<br>50 a 25mm x 25mm  A 7A 25 a 50mm x 50mm  Ta A<br>1oz FR4 2oz FR4<br>f NA A a ANP”<br>40 20<br>i AZA" a CT a<br>D=0.5 D=0.5<br>30 enca ae aa 15 AeREN Na<br>aa0CTI EE TT AAT BNoAyma TTT CMM TCU<br>20 10<br>D=0.2 a D=0.1 CT D=0.2  Tae D=0.1<br>PTI CU Raa aa PeA Tl<br>10 Perm eee D=0.05 TT 5 sere D=0.05<br>PL ee Single Pulse il ee ||N Single Pulse el<br>100µ0 Erte 1m oar 10m 100m rll 1 TT 10 100 i 1k 100µ0 rere 1m 10m CO 100m CI 1 10 100 mill 1k<br> Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Transient Thermal Impedance<br>4.5<br>\<br>Single Pulse 4.0<br>100 T amb =25°C 50mm x 50mm<br>ONC) 3.53.02.5 ERSINGYY 2oz FR4 EE<br>PEECUTIE TTTSLEOSS TTTE| 50mm x 50mm  inti 3.02.5 P|PNERSINGYY INGYY Ss 25mm x 25mm  ||<br>2oz FR4<br>HE il 2.5 PNERSINGYY 1oz FR4 |<br>Dl TZ il -— rs<br>2.0<br>10 BN EC Se —é OD 4<br>1.5<br>ATTfl| HTM  NTTTTS 1.00.00.50.0 a~~PONPoE aPoE a~~ ee~~ Ne<br>25mm x 25mm<br>1 nC UIT 1oz FR4 CT CAI Su UT 0.50.0 PONPoE aPoE a~~<br>100µ 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 120 140 160<br>Pulse Width (s)  Temperature (°C)<br>Pulse Power Dissipation Derating Curve<br>  Drain Current (A)   Drain Current (A)<br>ID ID<br> Thermal Resistance (°C/W) Thermal Resistance (°C/W)<br> Max Power Dissipation (W)  Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


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4.5<br>4.0<br>50mm x 50mm<br>3.53.02.5 P|PNERSINGYY Ss 2oz FR4 25mm x 25mm  EE 1oz FR4 ||<br>-— rs<br>2.0<br>—é OD 4<br>1.5<br>1.00.00.50.0 a~~PONPoE aPoE a~~ ee~~  aNe<br>0 20 40 60 80 100 120 140 160<br> Temperature (°C)<br>Derating Curve<br>**----- End of picture text -----**<br>


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ZXMN10A25K Document number: DS33569 Rev. 3 - 2 

July 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

## **ZXMN10A25K** [| 

## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|---|
|||||||||
|**Characteristic**|**Symbol **|**Min**|**Typ**|**Max **|**Unit**|**Test Condition **||
|**OFFCHARACTERISTICS**||||||||
|Drain-Source Breakdown Voltage|BVDSS|100|⎯|⎯|V|ID= 250µA,VGS= 0V||
|Zero Gate Voltage Drain Current|IDSS|⎯|⎯|0.5|μA|VDS= 100V,VGS= 0V||
|Gate-Source Leakage|IGSS|⎯|⎯|±100|nA|VGS=±20V,VDS= 0V||
|**ON CHARACTERISTICS**<br>~~a~~||||||||
|Gate Threshold Voltage<br>~~a~~|VGS(th)<br>~~a~~|2.0<br>~~a~~|⎯<br>~~a~~|4.0<br>~~a~~|V<br>~~a~~|ID= 250µA,VDS= VGS<br>~~a~~||
|Static Drain-Source On-Resistance (Note 11)<br>~~a~~|RDS (ON)<br>~~a~~|⎯<br>~~a~~|⎯<br>~~a~~<br>~~ee~~|125<br>~~a~~|mΩ<br>~~a~~|VGS= 10V,ID= 3.2A<br>~~a~~||
|||||150<br>~~a~~<br>~~ee~~||VGS= 6V,ID= 2.6A<br>~~a~~||
|Forward Transconductance(Notes 11 & 12)<br>~~a~~<br>~~ee~~|gfs<br>~~a~~<br>~~ee~~|⎯<br>~~a~~<br>~~ee~~|7.3<br>~~a~~<br>~~ee~~<br>~~ee~~|⎯<br>~~a~~<br>~~ee~~<br>~~ee~~|S<br>~~a~~<br>~~ee~~|VDS= 15V,ID= 2.9A<br>~~a~~<br>~~ee~~||
|Diode Forward Voltage(Note 11)<br>~~ee~~|VSD<br>~~ee~~|⎯<br>~~ee~~|0.85<br>~~ee~~<br>~~ee~~|0.95<br>~~ee~~<br>~~ee~~|V<br>~~ee~~|IS= 3.2A,VGS= 0V,TJ= +25°C<br>~~ee~~||
|Reverse recoverytime(Note 12)<br>~~ee~~|trr<br>~~ee~~|~~ee~~|40.5<br>~~ee~~<br>~~ee~~|⎯<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~|IS= 2.9A, di/dt = 100A/µs<br>TJ= +25°C<br>~~ee~~||
|Reverse recoverycharge(Note 12)<br>~~ee~~|Qrr<br>~~ee~~|⎯<br>~~ee~~|62<br>~~ee~~<br>~~ee~~|⎯<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~|||
|**DYNAMIC CHARACTERISTICS(Note 12)**<br>~~ee~~||||||||
|Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|⎯<br>~~ee~~|859<br>~~ee~~|⎯<br>~~ee~~|pF<br>~~ee~~|VDS= 50V, VGS= 0V<br>f = 1MHz<br>~~ee~~<br>~~ee~~||
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|⎯<br>~~ee~~|57.3<br>~~ee~~|⎯<br>~~ee~~|pF<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~ee~~<br>~~—<—<—<_~~|Crss<br>~~ee~~<br>~~a~~|⎯<br>~~ee~~|33<br>~~ee~~|⎯<br>~~ee~~|pF<br>~~ee~~<br>~~ee~~|||
|Total Gate Charge(Note 13)<br>~~ee~~<br>~~Sa~~<br>~~—<—<—<_~~|Qg<br>~~ee~~<br>~~Sa~~<br>~~a~~|⎯<br>~~ee~~<br>~~Sa~~|9.6<br>~~ee~~<br>~~Sa~~|⎯<br>~~ee~~<br>~~Sa~~|nC<br>~~ee~~<br>~~Sa~~<br>~~ee~~|VGS= 5V<br>~~ee~~<br>~~Sa~~<br>~~ee~~|VDS= 50V<br>ID= 2.9A<br>~~ee~~<br>~~Sa~~<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(Note 13)<br>~~Sa~~<br>~~—<—<—<_~~|Qg<br>~~Sa~~<br>~~a~~|⎯<br>~~Sa~~|17.16<br>~~Sa~~|⎯<br>~~Sa~~|nC<br>~~Sa~~<br>~~ee~~|VGS= 10V<br>~~Sa~~<br>~~ee~~<br>~~ee~~||
|Gate-Source Charge(Note 13)<br>~~Sa~~<br>~~—<—<—<_~~|Qgs<br>~~Sa~~<br>~~a~~|⎯<br>~~Sa~~|3.77<br>~~Sa~~|⎯<br>~~Sa~~|nC<br>~~Sa~~<br>~~ee~~|||
|Gate-Drain Charge(Note 13)<br>~~Sa~~<br>~~—<—<—<_~~|Qgd<br>~~Sa~~<br>~~a~~|⎯<br>~~Sa~~|5.36<br>~~Sa~~|⎯<br>~~Sa~~<br>~~ee~~|nC<br>~~Sa~~<br>~~ee~~<br>~~ee~~|||
|Turn-On DelayTime(Note 13)<br>~~Sa~~<br>~~—<—<—<_~~|tD(on)<br>~~Sa~~<br>~~a~~|⎯<br>~~Sa~~|4.9<br>~~Sa~~|⎯<br>~~Sa~~<br>~~ee~~|ns<br>~~Sa~~<br>~~ee~~<br>~~ee~~|VDD= 50V, VGS= 10V<br>ID= 1A, RG≅6.0Ω<br>~~Sa~~<br>~~ee~~<br>~~ee~~||
|Turn-On Rise Time(Note 13)<br>~~—<—<—<_~~|tr<br>~~a~~|⎯|3.7|⎯<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|||
|Turn-Off DelayTime(Note 13)<br>~~—<—<—<_~~|tD(off)<br>~~a~~|⎯|17.7|⎯<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|||
|Turn-Off Fall Time(Note 13)<br>~~—<—<—<_~~|tf<br>~~a~~|⎯|9.4|⎯<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|||



13. Switching characteristics are independent of operating junction temperatures. 

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ZXMN10A25K Document number: DS33569 Rev. 3 - 2 

July 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXMN10A25K** 

## **Typical Characteristics** 

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| T = 25 ° C | | titty 10V a 7V T = 150°C a 10V TTF<br>i Po et 10 SS 5V<br>10<br>—— 5V A ie 4.5V<br>4V<br>4.5V 1<br>1 Lao | 3.5V<br>WAZ2ae> eee Giacre<br>I —=—— i —— ee eer ft  te<br>pc 4V 0.1 ert] | |TE<br>3V<br>0.1 VGS V GS<br>eeeSEES ees eens eee EE 0.01 eeOL<br>0.1 1 10 0.1 1 10<br>VDS  Drain-Source Voltage (V) VDS  Drain-Source Voltage (V)<br>Output Characteristics Output Characteristics<br>2.2<br>10 a 2.0 a V GS  = 10V y<br>SS 1.8 a I D  = 2.9A Z|<br>po LE R<br>T = 150 ° C 1.6 DS(on)<br>Uf 1.4 pe<br>47 ff | | 4<br>1.2<br>1 nar, T = 25°C r 1.0 ee eee V<br>0.8 GS(th)<br>— a ——— a ae<br>Eff 0.6 La V  = V —<br>GS DS<br>VDS = 10V 0.4 I D  = 250uA<br>0.1 0.2<br>3 fof 4 5 6 -50 Pn 0 50 100 150<br>VGS  Gate-Source Voltage (V) Tj  Junction Temperature (°C)<br>Typical Transfer Characteristics Normalised Curves v Temperature<br>VGS 4V T = 25°C 10<br>i SS<br>T = 150°C<br>10 4.5V ee<br>ig SS —= Se<br>1<br>5V<br>oe i oo ——oa T = 25°C<br>1 Or OEE | ff<br>0.1<br>Sh 7V == == === ===<br>0.1 SSa aan rsee<br>ee 10V 0.01 Ae eee<br>0.1 1 10 0 .2 0.4 0.6 0.8 1.0 1. 2<br>ID  Drain Current (A) VSD  Source-Drain Voltage (V)<br>On-Resistance v Drain Current<br>  Drain Current (A)   Drain Current (A)<br>ID ID<br>GS(th)<br> and V<br>DS(on)<br>  Drain Current (A)<br>ID<br>Normalised R<br>(Ω)<br>  Reverse Drain Current (A)<br>ISD<br> Drain-Source On-Resistance<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Source-Drain Diode Forward Voltage** 

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ZXMN10A25K Document number: DS33569 Rev. 3 - 2 

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**A Product Line of Diodes Incorporated** 

**ZXMN10A25K** 

## **Typical Characteristics** (cont.) 

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10<br>1200 [TIT ton V GS  = 0V mm I D  = 2.9A Wy<br>oS f = 1MHz all 8 Bo EEEEEE HEH<br>1000 a nll Sf<br>—— PETEEE Ey<br>800 a 6 Fa<br>600 eelPall C ISS COSS aE ee PyPTT TLETET TET ATTTALE<br>Cn 08 | 4 TEESE<br>400 a C RSS rail ZL<br>a a | PI IAT TT TTT EE ETT TTT<br>2<br>2000 P|SSOTT PN <Cd TETT| 0 YTYETViliTTLiii titi ittLd V DS  = 50V<br>0.1 1 10 100 0 2 4 6 8 10 12 14 16 18<br>VDS - Drain - Source Voltage (V) Q - Charge (nC)<br>Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge<br>C  Capacitance (pF)<br>  Gate-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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Capacitance v Drain-Source Voltage<br>**----- End of picture text -----**<br>


## **Test Circuits** 

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Current<br>regulator<br>QG<br>12V  0.2 F  50k  Same as<br>D.U.T<br>VG  QGS  QGD<br>VDS<br>| | ‘ L | _ )a I pne G  a 1<br>D.U.T<br>ID<br>VGS<br>Charge<br>Basic gate charge waveform  Gate charge test circuit<br>| fN\ WA 90% VDS  RD<br>I<br>VGS  VDS<br>| RG  VDD<br>! A a 10% VGS  | Pulse width   1 S<br>Duty factor 0.1%<br>[> tr  <> td(off)  tr  i td(on)  | -<br>\¢_ t(on)  Ie|q¢——_> —$t t(on)   l e | " T<br>Switching time waveforms  Switching time test circuit<br>**----- End of picture text -----**<br>


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ZXMN10A25K Document number: DS33569 Rev. 3 - 2 

July 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** | **ZXMN10A25K** | 

## **Package Outline Dimensions** 

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E<br>A<br>b3 c2<br>L3<br>E 1<br>A2<br>D<br>H<br>L4 A1<br>L<br>e<br>2X b2 3X b a<br>**----- End of picture text -----**<br>


|**TO252 **|**TO252 **|**TO252 **|**TO252 **|
|---|---|---|---|
|**Dim Min**|**Dim Min**|**Max **|**Typ**|
|**A**|2.19|2.39|2.29|
|**A1**|0.00|0.13|0.08|
|**A2**|0.97|1.17|1.07|
|**b**|0.64|0.88|0.783|
|**b2 **|0.76|1.14|0.95|
|**b3**|5.21|5.46|5.33|
|**c2 **|0.45|0.58|0.531|
|**D**|6.00|6.20|6.10|
|**D1**|5.21|−|−|
|**e**|−|−|2.286|
|**E**|6.45|6.70|6.58|
|**E1**|4.32|−|−|
|**H**|9.401|10.41|9.91|
|**L**|1.40|1.78|1.59|
|**L3**|0.88|1.27|1.08|
|**L4**|0.64|1.02|0.83|
|**a**|0°|10°|−|
|**All Dimensions in mm**||||



## **Suggested Pad Layout** 

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- X2 =<br>Y2<br>a<br>C [Z]<br>Y1<br>r H BI<br>>| X1 Is E1<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value (in mm)**|
|---|---|
|**Z**|11.6|
|**X1**|1.5|
|**X2**|7.0|
|**Y1**|2.5|
|**Y2**|7.0|
|**C**|6.9|
|**E1**|2.3|



7 of 8 **www.diodes.com** 

ZXMN10A25K Document number: DS33569 Rev. 3 - 2 

July 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** | **ZXMN10A25K** | 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2012, Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

ZXMN10A25K Document number: DS33569 Rev. 3 - 2 

July 2012 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/ZXMN10A25KTC/power-mosfet-n-channel-100-v-64-a-0125-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/zxmn10a25ktc/mosfet-n-100v-d-pak/dp/1471147)
---

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