# Power MOSFET, N Channel, 100 V, 5 A, 0.085 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3943973/)

**URL**: https://novapart.co/products/ZXMN10A09KTC/power-mosfet-n-channel-100-v-5-a-0085-ohm-to-252
**SKU**: ZXMN10A09KTC
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8350
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.15W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 5A |
| Drain Source On State Resistance | 0.085ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943973/)

**A Product Line of Diodes Incorporated** 

## **ZXMN10A09K** 

## **100V N-CHANNEL ENHANCEMENT MODE MOSFET** 

> Please click here to visit our online s ~~Please click here to visit our online spice~~ pice models database. ~~models database.~~ 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(on)**|**ID**<br>**TA = 25**°**C**|
|100V|85mΩ  @ VGS= 10V|7.7A|
||100mΩ  @ VGS= 6V|7.1A|



## **Features and Benefits** 

- Low input capacitance 

- Low on-resistance 

- Fast switching speed 

- **“Green” Component and RoHS compliant (Note 1)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description and Applications** 

This MOSFET features low on-resistance, fast switching and a high avalanche withstand capability, making it ideal for high efficiency power management applications. 

## **Mechanical Data** 

   - Case: TO252-3L 

   - Case Material: Molded Plastic “Green” Molding Compound, UL Flammability Classification Rating 94V-0 (Note 1) 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- DC-DC Converters 

- Power management functions 

- Disconnect switches 

- Motor control 

   - Terminal Connections: See Diagram 

   - Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.33 grams (approximate) 

- Uninterrupted power supply 

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TO252-3L<br>**----- End of picture text -----**<br>


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D<br>D<br>G<br>D<br>G S S<br>Pin Out – Top View Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 1) 

|**Product**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|---|---|---|---|---|
|ZXMN10A09KTC|ZXMN10A09|13|16|2,500|



Notes: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website.  For packaging details, go to our website. 

## **Marking Information** 

ZXMN = Product Type Marking Code, Line 1 **[ZXMN ]** 10A09 = Product Type Marking Code, Line 2 **10A09** YYWW = Date Code Marking **YYWW** YY = Year (ex: 09 = 2009) WW = Week (01-52) 

1 of 8 **www.diodes.com** 

ZXMN10A09K Document Number DS32045 Rev. 7 - 2 

January 2010 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXMN10A09K** 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol **|**Value**|**Unit**|
|Drain-Source voltage|||VDSS|100|V|
|Gate-Source voltage|||VGS|±20|V|
|Continuous Drain current|VGS= 10V|(Note 3)<br>TA= 70°C (Note 3)<br>(Note2)|ID|7.7<br>6.2<br>5.0|A|
|Pulsed Drain current<br>|VGS= 10V|(Note 4)|IDM|27|A|
|Continuous Source current(Bodydiode)<br>||(Note 3)|IS|11|A|
|Pulsed Source current(Bodydiode)<br>||(Note 4)|ISM|27|A|



## **Thermal Characteristics** @TA = 25°C unless otherwise specified 

|**Thermal Characteristics  **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics  **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power dissipation<br>Linear derating factor|(Note 2)|PD|4.31<br>34.4|W<br>mW/°C|
||(Note 3)||10.1<br>80.8||
||(Note 6)||2.15<br>17.2||
|Thermal Resistance, Junction to Ambient|(Note2)|RθJA|29|°C/W|
||(Note 3)||12.3||
||(Note 6)||58||
|Thermal Resistance,Junction to Lead|(Note 5)|RθJL|1.14|°C/W|
|Operatingand storage temperature range||TJ,TSTG|-55 to 150|°C|



- Notes: 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

   3. Same as note 2, except the device is measured at t ≤ 10 sec. 

4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs.  The pulse current is limited by the maximum junction temperature. 

5. Thermal resistance from junction to solder-point (at the end of the drain lead). 

6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with the high coverage single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

2 of 8 **www.diodes.com** 

ZXMN10A09K Document Number DS32045 Rev. 7 - 2 

January 2010 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXMN10A09K** 

## **Thermal Characteristics** 

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R DS(on) Sees nese SS R DS(on)<br>10 Limit 10 Limit<br>—<— |aK<br>2 ae ee ea el|| Pitt “SANT ETA ESN Zz<br>1 1 DC<br>DC 1s<br>1s<br>100ms a i oe 100ms } ss<br>100m 10ms 100m 10ms<br>Tamb=25°C 1ms Tamb=25°C 1ms<br>25mm x 25mm  50mm x 50mm<br>10m : 1oz FR4 ce 100µs 10m : 2oz FR4 —* 100µs<br>1 10 100 1 10 100<br>VDS  Drain-Source Voltage (V) VDS  Drain-Source Voltage (V)<br>Safe Operating Area Safe Operating Area<br>60 30<br>Z Tamb=25 ° C WME UTM LE |AIM ett a T amb =25°C MT<br>50 Z 25mm x 25mm  25 50mm x 50mm  TANT To<br>1oz FR4 2oz FR4<br>40 ; LTcine7a 20 alEL AImm<br>Ma Zan An<br>D=0.5 D=0.5<br>30 e yty  UTimi 15 e yeay) Aa|<br>20 CTTTAIM TM EAT TTA 10 STeaAf<br>D=0.2 OL es A D=0.1 anne D=0.2 D=0.1<br>PME CH ol CZAR Tl<br>10 ener Coe D=0.05 TTT 5 ei D=0.05<br>Se Single Pulse eee Single Pulse TT<br>0 eee eer| UU | Th Iil 0 momsPL  ieN CHUi<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br> Pulse Width (s) Pulse Width (s)<br>Transient Therm al Im pedance Transient Thermal Impedance<br>  Drain Current (A)   Drain Current (A)<br>ID ID<br>Thermal Resistance (°C/W)<br> Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


## **Transient Thermal Impedance** 

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4.5<br>NU _—<br>Single Pulse 4.0<br>100 CSCIC T amb =25°C RNS 50mm x 50mm  Ee<br>3.5 2oz FR4<br>50mm x 50mm  3.0<br>25mm x 25mm<br>2oz FR4<br>TsCETTETTT NSSSS Hilit 2.5 ;P| NG4 1oz FR4 |<br>2.0<br>10<br>CCS) 1.5 =tt<br>flI TT A | 1.0 ee ee i ~Ne<br>25mm x 25mm<br>1oz FR4 0.5<br>1 AAA 0.0 \SS<br>oe ow | EES<br>100µ 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 120 140 160<br>Pulse Width (s)  Temperature (°C)<br>Pulse Power Dissipation Derating Curve<br> Max Power Dissipation (W)  Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


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ZXMN10A09K Document Number DS32045 Rev. 7 - 2 

January 2010 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXMN10A09K** [ 

**Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|---|
|||||||||
|**Characteristic**<br>~~——~~|**Symbol**<br>~~——~~<br>~~=~~|**Min**<br>~~——~~<br>~~=~~|**Typ**<br>~~——~~|**Max**<br>~~——~~<br>~~SS~~|**Unit**<br>~~——~~<br>~~SS~~|**Test Condition**<br>~~——~~||
|**OFF CHARACTERISTICS**<br>~~——~~<br>~~=~~<br>~~SS~~||||||||
|Drain-Source Breakdown Voltage<br>~~——~~|BVDSS<br>~~——~~<br>~~=~~|100<br>~~——~~<br>~~=~~|⎯<br>~~——~~|⎯<br>~~——~~<br>~~SS~~|V<br>~~——~~<br>~~SS~~|ID= 250μA, VGS = 0V<br>~~——~~||
|Zero Gate Voltage Drain Current<br>~~——~~|IDSS<br>~~——~~<br>~~=~~<br>~~PRD~~|⎯<br>~~——~~<br>~~=~~<br>~~PRD~~|⎯<br>~~——~~<br>~~(RR~~|1<br>~~——~~<br>~~SS~~<br>~~(RR~~|µA<br>~~——~~<br>~~SS~~<br>~~(OO~~|VDS = 100V, VGS = 0V<br>~~——~~<br>~~(OO~~||
|Gate-Source Leakage<br>~~nn~~|IGSS<br>~~=~~<br>~~nn~~<br>~~PRD~~|⎯<br>~~=~~<br>~~nn~~<br>~~PRD~~|⎯<br>~~nn~~<br>~~(RR~~|±100<br>~~SS~~<br>~~nn~~<br>~~(RR~~|nA<br>~~SS~~<br>~~nn~~<br>~~(OO~~|VGS =±20V, VDS = 0V<br>~~nn~~<br>~~(OO~~||
|**ON CHARACTERISTICS**<br>~~PRD~~<br>~~(RR~~<br>~~(OO~~<br>~~——S~~||||||||
|Gate Threshold Voltage<br>~~——S~~|VGS(th)<br>~~——S~~|2<br>~~——S~~|⎯<br>~~——S~~|4<br>~~——S~~|V<br>~~——S~~|ID = 250μA, VDS = VGS<br>~~——S~~||
|Static Drain-Source On-Resistance (Note 7)<br>~~——S~~<br>~~oT~~|RDS (ON)<br>~~——S~~<br>~~oT~~|⎯<br>~~——S~~<br>~~oT~~|⎯<br>~~——S~~<br>~~oT~~|0.085<br>~~——S~~<br>~~oT~~|Ω<br>~~——S~~<br>~~oT~~|VGS = 10V, ID = 4.6A<br>~~——S~~<br>~~oT~~||
|||||0.100<br>~~oT~~||VGS = 6V, ID = 4.2A<br>~~oT~~||
|Forward Transconductance (Notes 7 & 8)<br>~~oT~~|gfs<br>~~oT~~|⎯<br>~~oT~~<br>~~I~~|10.7<br>~~oT~~<br>~~(RO~~|⎯<br>~~oT~~<br>~~(RO~~|S<br>~~oT~~<br>~~(OO~~|VDS = 15V, ID = 4.6A<br>~~oT~~<br>~~(OO~~||
|Diode Forward Voltage (Note 7)<br>~~nD~~|VSD<br>~~nD~~|⎯<br>~~nD~~<br>~~I~~|0.850<br>~~nD~~<br>~~(RO~~|0.950<br>~~nD~~<br>~~(RO~~|V<br>~~nD~~<br>~~(OO~~|IS = 4.7A, VGS= 0V<br>~~nD~~<br>~~(OO~~||
|Reverse recovery time (Note 8)<br>~~rr~~|trr<br>~~rr~~|⎯<br>~~I~~<br>~~rr~~|40<br>~~(RO~~<br>~~rr~~|⎯<br>~~(RO~~<br>~~rr~~|ns<br>~~(OO~~<br>~~rr~~|IS = 3.0A, di/dt = 100A/μs<br>~~(OO~~<br>~~rr~~||
|Reverse recovery charge (Note 8)<br>~~rr~~|Qrr<br>~~rr~~|⎯<br>~~rr~~|62<br>~~rr~~|⎯<br>~~rr~~|nC<br>~~rr~~|||
|**DYNAMIC CHARACTERISTICS**(Note 8)<br>~~ee~~<br>~~**—**—~~||||||||
|Input Capacitance<br>~~a~~<br>~~**—**—~~|Ciss<br>~~a~~|⎯<br>~~a~~|1313<br>~~a~~|⎯<br>~~a~~|pF<br>~~a~~|VDS = 50V, VGS = 0V<br>f = 1MHz<br>~~a~~<br>~~ee~~<br>~~ee~~||
|Output Capacitance<br>~~a~~<br>~~**—**—~~|Coss<br>~~a~~|⎯<br>~~a~~|83<br>~~a~~|⎯<br>~~a~~<br>~~e~~|pF<br>~~a~~<br>~~e~~|||
|Reverse Transfer Capacitance<br>~~a~~<br>~~**—**—~~|Crss<br>~~a~~|⎯<br>~~a~~|56<br>~~a~~|⎯<br>~~a~~<br>~~e~~|pF<br>~~a~~<br>~~e~~|||
|Total Gate Charge (Note 9)<br>~~**—**—~~<br>~~PC~~|Qg<br>~~ee~~|⎯<br>~~ee~~|17.2|⎯<br>~~e~~|nC<br>~~e~~|VGS= 6V<br>~~ee~~<br>~~ee~~|VDS = 50V,<br>ID= 4.6A<br>~~ee~~<br>~~e~~<br>~~ee~~|
|Total Gate Charge (Note 9)<br>~~**—**—~~<br>~~——~~<br>~~PC~~|Qg<br>~~——~~<br>~~ee~~|⎯<br>~~——~~<br>~~ee~~|26.0<br>~~——~~|⎯<br>~~e~~<br>~~——~~|nC<br>~~e~~<br>~~——~~|VGS= 10V<br>~~ee~~<br>~~ee~~<br>~~——~~<br>~~ee~~||
|Gate-Source Charge (Note 9)<br>~~**—**—~~<br>~~——~~<br>~~PC~~|Qgs<br>~~——~~<br>~~ee~~|⎯<br>~~——~~<br>~~ee~~|5.6<br>~~——~~|⎯<br>~~e~~<br>~~——~~|nC<br>~~e~~<br>~~——~~|||
|Gate-Drain Charge (Note 9)<br>~~**—**—~~<br>~~——~~<br>~~PC~~<br>~~———~~|Qgd<br>~~——~~<br>~~ee~~|⎯<br>~~——~~<br>~~ee~~|7.6<br>~~——~~|⎯<br>~~e~~<br>~~——~~<br>~~ee~~|nC<br>~~e~~<br>~~——~~<br>~~ee~~|||
|Turn-On Delay Time (Note 9)<br>~~**—**—~~<br>~~——~~<br>~~PC~~<br>~~———~~|tD(on)<br>~~——~~<br>~~ee~~|⎯<br>~~——~~<br>~~ee~~|6.8<br>~~——~~|⎯<br>~~e~~<br>~~——~~<br>~~ee~~|ns<br>~~e~~<br>~~——~~<br>~~ee~~|VDD = 50V, VGS = 10V<br>ID = 1.0A, RG≅25Ω<br>~~ee~~<br>~~ee~~<br>~~——~~<br>~~ee~~||
|Turn-On Rise Time (Note 9)<br>~~PC~~<br>~~———~~|tr<br>~~ee~~|⎯<br>~~ee~~|5.3|⎯<br>~~ee~~|ns<br>~~ee~~|||
|Turn-Off Delay Time (Note 9)<br>~~———~~|tD(off)|⎯|27.5|⎯<br>~~ee~~|ns<br>~~ee~~|||
|Turn-Off Fall Time (Note 9)<br>~~———~~|tf|⎯|12.3|⎯<br>~~ee~~|ns<br>~~ee~~|||



8. For design aid only, not subject to production testing. 

9. Switching characteristics are independent of operating junction temperatures. 

4 of 8 **www.diodes.com** 

ZXMN10A09K Document Number DS32045 Rev. 7 - 2 

January 2010 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXMN10A09K** 

## **Typical Characteristics** 

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T = 25°C 10V 5V T = 150°C 10V 5V<br>10 eTZ anini 4.5V 10 Aau ger AAT 4.5V<br>LOT ee 4V<br>4V<br>| |_| | getty tt 3.5V<br>1 foe yA VGS 1 fo VGS<br>Ao] )}=§« Azeri<br>3.5V 3V<br>—PT Tir —pT Tit<br>0.1 1 10 0.1 1 10<br>VDS  Drain-Source Voltage (V) VDS  Drain-Source Voltage (V)<br>Output Characteristics Output Characteristics<br>2.0<br>V  = 10V<br>10 FO 1.8 GS<br>I  = 4.6A<br>D<br>1.6 R<br>DS(on)<br>T = 150°C<br>1.4<br>Ne eo<br>T = 25°C 1.2<br>1 VGS = VDS<br>ee 1.0 I D  = 250uA<br>ey Ay (es ee ee 0.8<br>VDS = 10V 0.6 V GS(th)<br>0.1 Pf 0.4<br>3 4 5 -50 0 50 100 150<br>VGS  Gate-Source Voltage (V) Tj  Junction Temperature (°C)<br>Typical Transfer Characteristics Normalised Curves v Temperature<br>1<br>T = 25°C 3.5V V GS 4V 4.5V 10<br>ee) Ae | 5V ——————<br>T = 150°C<br>ee a<br>1<br>PLA Gene een)4 Ry ff |<br>T = 25°C<br>ZenTTeee Eyeenamimee P|pf| of feZt<br>y | ey ey A —<br>0.1<br>0.1 WA)Pl e ee eeeee<br>10V<br>SSS Pf<br>Pt ttt 0.01 i) eeAe<br>0.1 1 10 0.2 0.4 0.6 0.8 1.0 1.2<br>ID  Drain Current (A) VSD  Source-Drain Voltage (V)<br>On-Resistance v Drain Current Source-Drain Diode Forward Voltage<br>  Drain Current (A)   Drain Current (A)<br>ID ID<br>GS(th)<br> and V<br>DS(on)<br>  Drain Current (A)<br>ID<br>Normalised R<br>(Ω)<br>  Reverse Drain Current (A)<br>ISD<br> Drain-Source On-Resistance<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


5 of 8 **www.diodes.com** 

ZXMN10A09K Document Number DS32045 Rev. 7 - 2 

January 2010 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXMN10A09K** 

## **Typical Characteristics - continued** 

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2000 10<br>al V  = 0V TTTTT IIIa<br>GS<br>f = 1MHz 8<br>1500<br>Tec a<br>C 6<br>ISS<br>1000 CE TI tpg ToL AL<br>C 4<br>OSS<br>500 C RSS 2 V DS  = 50V<br>=! Ma oY I D  = 4.6A<br>0 reea EE E  EEEPw CT 0 A nn miiS<br>0.1 1 10 100 0 5 10 15 20 25 30<br>VDS - Drain - Source Voltage (V) Q - Charge (nC)<br>Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge<br>C  Capacitance (pF)<br>  Gate-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


## **Test Circuits** 

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Q G<br>+ |<br>V G Q GS Q GD<br>—_<br>Charge<br>Basic gate charge waveform<br>90%V DS MV /———— f<br>10%<br>V GS I |Ne, |<br>leo td(on) + tr le t d(off) tr > |<br>t(on) t(on)<br>**----- End of picture text -----**<br>


**Basic gate charge waveform** 

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Current<br>regulator<br>i 12V f.0.2.F 50k . Same as .<br>D.U.T<br>V DS<br>ce ® IG<br>D.U.T<br>ID<br>V GS<br>**----- End of picture text -----**<br>


**Gate charge test circuit** 

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R D<br>V GS V DS<br>R G VDD<br>**----- End of picture text -----**<br>


**Switching time waveforms** 

**Switching time test circuit** 

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ZXMN10A09K Document Number DS32045 Rev. 7 - 2 

January 2010 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXMN10A09K** [| 

## **Package Outline Dimensions** 

|**DIM**<br>~~—————————E~~<br>~~Rs a~~|**Inches**<br>~~—————————E~~|**Inches**<br>~~—————————E~~|**Millimeters**<br>~~—————————E~~|**Millimeters**<br>~~—————————E~~|**DIM**<br>~~Eee~~<br>|**Inches**<br>~~Eee~~|**Inches**<br>~~Eee~~|**Millimeters**<br>~~Eee~~|**Millimeters**<br>~~Eee~~|
|---|---|---|---|---|---|---|---|---|---|
||**Min**<br>~~—————————E~~<br>~~a~~|**Max**<br>~~—————————E~~<br>~~es~~|**Min**<br>~~—————————E~~<br>~~es~~|**Max**<br>~~—————————E~~<br>||**Min**<br>~~Eee~~<br>|**Max**<br>~~Eee~~<br>|**Min**<br>~~Eee~~<br>|**Max**<br>~~Eee~~<br>|
|**A**<br>~~—————————E~~<br>~~Rs a~~<br>~~Rs~~<br>~~Rs~~|0.086<br>~~—————————E~~<br>~~a~~<br><br>|0.094<br>~~—————————E~~<br>~~esGO~~<br>|2.18<br>~~—————————E~~<br>~~esGO~~<br>|2.39<br>~~—————————E~~<br>~~GO~~<br>|**e**<br>~~Eee~~<br>~~GO~~<br><br>~~GO~~|0.090BSC<br>~~Eee~~<br>~~GO~~<br><br>~~GO~~||2.29BSC<br>~~Eee~~<br>~~GO~~<br><br>~~GO~~||
|**A1**<br>~~Rs a~~<br>~~Rs ~~<br>~~Rs~~|-<br>~~a~~<br> ~~a ~~<br>|0.005<br>~~esGO~~<br> ~~eG~~|-<br>~~esGO~~<br>~~eG~~|0.127<br>~~GO~~<br>~~eG~~|**H**<br>~~GO~~<br>~~eG~~<br>~~GO~~|0.370<br>~~GO~~<br>~~eG~~<br>~~GO~~|0.410<br>~~GO~~<br>~~eG~~<br>~~GO~~|9.40<br>~~GO~~<br>~~eG~~<br>~~GO~~|10.41<br>~~GO~~<br>~~eG~~|
|**b**<br>~~Rs ~~<br>~~Rs a~~<br>~~Rs~~|0.020<br> <br>~~a~~<br>|0.035<br>~~GO~~<br><br>|0.508<br>~~GO~~<br><br>~~Ge~~<br>|0.89<br>~~GO~~<br><br>~~Ge~~<br>|**L**<br>~~GO~~<br><br>~~GO~~<br>|0.055<br>~~GO~~<br><br>~~GO~~<br>~~QO~~<br>|0.070<br>~~GO~~<br><br>~~GO~~<br>~~QO~~<br>|1.40<br>~~GO~~<br><br>~~GO~~<br>~~QO~~<br>|1.78<br>~~GO~~<br><br>|
|**b2 **<br>~~Rs a~~<br>~~Rs~~<br>~~a~~|0.030<br>~~a~~<br>~~GG~~<br>~~a~~|0.045<br>~~GG~~<br>~~es~~|0.762<br>~~Ge~~<br>~~GG~~<br>~~es~~|1.14<br>~~Ge~~<br>~~GG~~<br>~~es~~|**L1**<br>~~GO~~<br>~~GG~~|0.108REF<br>~~GO~~<br>~~QO~~<br>~~GG~~||2.74 REF<br>~~GO~~<br>~~QO~~<br>~~GG~~||
|**b3**<br>~~a~~<br>~~Rs~~<br>~~a~~<br>~~Rs~~|0.205<br>~~a~~<br><br>~~a~~<br>~~GG~~|0.215<br><br>~~es~~<br>~~GG~~|5.21<br>~~Ge~~<br><br>~~es~~<br>~~GG~~|5.46<br>~~Ge~~<br><br>~~es~~<br>~~GG~~|**L2**<br><br>~~GG~~|0.020BSC<br>~~QO~~<br><br>~~GG~~||0.508BSC<br>~~QO~~<br><br>~~GG~~||
|**c**<br>~~a ~~<br>~~Rs~~<br>~~Rs~~|0.018<br> ~~a~~<br>~~GG~~<br>|0.024<br>~~es~~<br>~~GG~~|0.457<br>~~es~~<br>~~GG~~|0.61<br>~~es~~<br>~~GG~~|**L3**<br>~~GG~~|0.035<br>~~GG~~<br>~~GO~~|0.065<br>~~GG~~<br>~~GO~~|0.89<br>~~GG~~<br>~~GO~~|1.65<br>~~GG~~|
|**c2 **<br>~~Rs~~<br>~~I~~<br>~~Rs~~|0.018<br>~~GG~~<br>~~a ~~<br>|0.023<br>~~GG~~<br> ~~eG~~|0.457<br>~~GG~~<br>~~eG~~|0.584<br>~~GG~~<br>~~eG~~|**L4**<br>~~GG~~<br>~~eG~~|0.025<br>~~GG~~<br>~~eG~~<br>~~GO~~|0.040<br>~~GG~~<br>~~eG~~<br>~~GO~~|0.635<br>~~GG~~<br>~~eG~~<br>~~GO~~|1.016<br>~~GG~~<br>~~eG~~|
|**D**<br>~~Rs ~~<br>~~a~~|0.213<br> ~~a~~<br>~~a~~|0.245<br>~~eG~~|5.41<br>~~Ge~~<br>~~eG~~|6.22<br>~~Ge~~<br>~~Qe~~|**L5**<br>~~GO~~|0.045<br>~~GO~~<br>~~GO~~<br>~~CO~~|0.060<br>~~GO~~<br>~~GO~~<br>~~CO~~|1.14<br>~~GO~~<br>~~CO~~|1.52|
|**D1**<br>~~Rs ~~<br>~~a~~<br>~~Rs a~~<br>~~pC~~|0.205<br> <br>~~a~~<br>~~a eG~~|-<br>~~eG~~<br>~~eG~~|5.21<br>~~eG~~<br>~~eG~~|-<br>~~Qe~~<br>~~eG~~|**θ1°**<br>~~eG~~|0°<br>~~GO~~<br>~~CO~~<br>~~eG~~<br>~~GC~~|10°<br>~~GO~~<br>~~CO~~<br>~~eG~~<br>~~GC~~|0°<br>~~GO~~<br>~~CO~~<br>~~eG~~<br>~~GC~~|10°<br>~~eG~~|
|**E**<br>~~a ~~<br>~~Rs a~~<br>~~pC~~|0.250<br> ~~a~~<br>~~a eG~~|0.265<br>~~eG~~<br>~~eG~~|6.35<br>~~eG~~<br>~~eG~~|6.73<br>~~Qe~~<br>~~eG~~|**θ°**<br>~~eG~~|0°<br>~~CO~~<br>~~eG~~<br>~~GC~~|15°<br>~~CO~~<br>~~eG~~<br>~~GC~~|0°<br>~~CO~~<br>~~eG~~<br>~~GC~~|15°<br>~~eG~~|
|**E1**<br>~~Rs a~~<br>~~pC~~|0.170<br>~~a eG~~|-<br>~~eG~~|4.32<br>~~eG~~|-<br>~~eG~~|-<br>~~eG~~|-<br>~~eG~~<br>~~GC~~|-<br>~~eG~~<br>~~GC~~|-<br>~~eG~~<br>~~GC~~|-<br>~~eG~~|



## **Suggested Pad Layout** 

**==> picture [185 x 129] intentionally omitted <==**

**----- Start of picture text -----**<br>
6.2 3.0<br>0.244 0.118<br>PT,<br>5.8<br>1.6 6.17<br>0.228<br>0.063 0.243<br>1 L o<br>2.58 mm<br>inches<br>JL —<br>0.101<br>**----- End of picture text -----**<br>


7 of 8 **www.diodes.com** 

ZXMN10A09K Document Number DS32045 Rev. 7 - 2 

January 2010 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** | ~~ZETEX~~ **ZXMN10A09K** ~~—~~ 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

|A.   Life support devices or systems are devices or systems which:|A.   Life support devices or systems are devices or systems which:|
|---|---|
||1. are intended to implant into the body, or|
||2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the|
||labeling can be reasonably expected to result in significant injury to the user.|
|B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the|B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the|
|failure of the life support device or to affect its safety or effectiveness.|failure of the life support device or to affect its safety or effectiveness.|



Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated **www.diodes.com** 

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ZXMN10A09K Document Number DS32045 Rev. 7 - 2 

January 2010 © Diodes Incorporated 



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---

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