# Power MOSFET, N Channel, 100 V, 2.1 A, 0.25 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:3943970RL/)

**URL**: https://novapart.co/products/ZXMN10A08DN8TA/power-mosfet-n-channel-100-v-21-a-025-ohm-soic
**SKU**: ZXMN10A08DN8TA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3290
**Stock**: 200+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.25W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.1A |
| Drain Source On State Resistance | 0.25ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943970RL/)

## **ZXMN10A08DN8** 

## **100V N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **SUMMARY** 

**V(BR)DSS = 100V; RDS(ON) = 0.25 ID = 2.1A** 

## **DESCRIPTION** 

This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. 

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## **FEATURES** 

- Low on-resistance 

- Fast switching speed 

- Low threshold 

- Low gate drive 

- Low profile SOIC package 

## **APPLICATIONS** 

- DC - DC converters 

- Power management functions 

- Disconnect switches 

- Motor control 

## **ORDERING INFORMATION** 

|**DEVICE**|**REEL**<br>**SIZE**|**TAPE**<br>**WIDTH**|**QUANTITY**<br>**PER REEL**|
|---|---|---|---|
|ZXMN10A08DN8TA|7”|12mm|500 units|
|ZXMN10A08DN8TC|13”|12mm|2,500 units|



## **DEVICE MARKING** 

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- ZXMN 10A08D 

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## **ZXMN10A08DN8** 

## **ABSOLUTE MAXIMUM RATINGS** 

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PARAMETER SYMBOL LIMIT UNIT<br>Drain-source voltage VDSS 100 V<br>Gate source voltage VGS 20 V<br>Continuous drain current VGS=10V; TA=25°C [(b)] ID 2.1 A<br>VGS=10V; TA=70°C [(b)] 1.7<br>VGS=10V; TA=25°C [(a)] 1.6<br>Pulsed drain current [(c)] IDM 9 A<br>Continuous source current (body diode) [(b)] IS 2.6 A<br>Pulsed source current (body diode) [(c)] ISM 9 A<br>Power dissipation at TA=25°C [(a)] PD 1.25 W<br>Linear derating factor 10 mW/°C<br>Power dissipation at TA=25°C [(b)] PD 1.8 W<br>Linear derating factor 14.5 mW/°C<br>Operating and storage temperature range Tj:Tstg -55 to +150 °C<br>**----- End of picture text -----**<br>


## **THERMAL RESISTANCE** 

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PARAMETER SYMBOL VALUE UNIT<br>Junction to ambient (a) R θ JA 100 °C/W<br>Junction to ambient (b) R θ JA 69 °C/W<br>**----- End of picture text -----**<br>


## NOTES 

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions 

(b) For a device surface mounted on FR4 PCB measured at t � 5 secs. 

(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 � s  - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph 

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## **ZXMN10A08DN8** 

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## **ZXMN10A08DN8** 

## **ELECTRICAL CHARACTERISTICS** (at TA = 25°C unless otherwise stated). 

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PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.<br>STATIC<br>Drain-source breakdown voltage V(BR)DSS 100 V ID=250 � A, VGS=0V<br>Zero gate voltage drain current IDSS 0.5 � A VDS=100V, VGS=0V<br>Gate-body leakage IGSS 100 nA VGS= � 20V, VDS=0V<br>Gate-source threshold voltage VGS(th) 2.0 V ID=250 � A, VDS= VGS<br>Static drain-source on-state resistance [(1)] RDS(on) 0.25 � VGS=10V, ID=3.2A<br>0.30 � VGS=6V, ID=2.6A<br>Forward transconductance [(1)(3)] gfs 5.0 S VDS=15V,ID=3.2A<br>DYNAMIC [(3)]<br>Input capacitance Ciss 405 pF<br>Output capacitance Coss 28.2 pF f=1MHzVDS=50 V, VGS=0V,<br>Reverse transfer capacitance Crss 14.2 pF<br>SWITCHING [(2)] [(3)]<br>Turn-on delay time td(on) 3.4 ns<br>Rise time tr 2.2 ns VDD =30V, ID=1.2A<br>Turn-off delay time td(off) 8 ns RG ≅ 6.0 � , VGS=10V<br>Fall time tf 3.2 ns<br>Gate charge Qg 4.2 nC VDS=50V,VGS=5V,<br>ID=1.2A<br>Total gate charge Qg 7.7 nC<br>Gate-source charge Qgs 1.8 nC IVDDS=1.2A=50V,VGS=10V,<br>Gate-drain charge Qgd 2.1 nC<br>SOURCE-DRAIN DIODE<br>Diode forward voltage [(1)] VSD 0.87 0.95 V TJ=25°C, IS=3.2A,<br>VGS=0V<br>Reverse recovery time [(3)] trr 27 ns TJ=25°C, IF=1.2A,<br>Reverse recovery charge [(3)] Qrr 32 nC di/dt= 100A/ � s<br>**----- End of picture text -----**<br>


## **NOTES:** 

(1) Measured under pulsed conditions. Width = 300 µ s. Duty cycle ≤ 2% . 

(2) Switching characteristics are independent of operating junction temperature. 

(3) For design aid only, not subject to production testing. 

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## **ZXMN10A08DN8** 

**TYPICAL CHARACTERISTICS** 

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## **ZXMN10A08DN8** 

## **TYPICAL CHARACTERISTICS** 

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## **ZXMN10A08DN8** 

## **PACKAGE OUTLINE** 

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## CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES 

## **PACKAGE DIMENSIONS** 

|**DIM**|**Millimeters**|**Millimeters**|**Inches**<br>**D**<br>**Min**<br>**Max**|**Inches**<br>**D**<br>**Min**<br>**Max**|**IM**|**Millimeters**|**Millimeters**|**Inches**|**Inches**|
|---|---|---|---|---|---|---|---|---|---|
||**Min**|**Max**|**Min**|||**Min**|**Max**|**Min**|**Max**|
|A|1.35|1.75|0.053|0.069|e|1.27 BSC||0.050 BSC||
|A1|0.10|0.25|0.004|0.010|b|0.33|0.51|0.013|0.020|
|D|4.80|5.00|0.189|0.197|c|0.19|0.25|0.008|0.010|
|H|5.80|6.20|0.228|0.244|�|0°|8°|0°|8°|
|E|3.80|4.00|0.150|0.157|h|0.25|0.50|0.010|0.020|
|L|0.40|1.27|0.016|0.050|-|-|-|-|-|



## © Zetex Semiconductors plc 2005 

**Europe Americas Asia Pacific Corporate Headquarters** Zetex GmbH Zetex Inc Zetex (Asia) Ltd Zetex Semiconductors plc Streitfeldstraße 19 700 Veterans Memorial Hwy 3701-04 Metroplaza Tower 1 Zetex Technology Park D-81673 München Hauppauge, NY 11788 Hing Fong Road, Kwai Fong Chadderton, Oldham, OL9 9LL Germany USA Hong Kong United Kingdom Telefon: (49) 89 45 49 49 0 Telephone: (1) 631 360 2222 Telephone: (852) 26100 611 Telephone (44) 161 622 4444 Fax: (49) 89 45 49 49 49 Fax: (1) 631 360 8222 Fax: (852) 24250 494 Fax: (44) 161 622 4446 europe.sales@zetex.com usa.sales@zetex.com asia.sales@zetex.com hq@zetex.com 

These offices are supported by agents and distributors in major countries world-wide. 

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on towww.zetex.com 

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## Links

- [View this product on Novapart](https://novapart.co/products/ZXMN10A08DN8TA/power-mosfet-n-channel-100-v-21-a-025-ohm-soic)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/zxmn10a08dn8ta/mosfet-n-ch-100v-2-1a-soic/dp/3943970RL)
---

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