# Power MOSFET, N Channel, 100 V, 700 mA, 0.7 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3127650/)

**URL**: https://novapart.co/products/ZXMN10A07FTA/power-mosfet-n-channel-100-v-700-ma-07-ohm-sot-23
**SKU**: ZXMN10A07FTA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1620
**Stock**: 1000+
**Lead Time**: 134 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:700mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 625mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 700mA |
| Drain Source On State Resistance | 0.7ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3127650/)

**A Product Line of Diodes Incorporated** | **ZXMN10A07F** | 

## **100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 PACKAGE** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) Max**|**ID **<br>**TA = +25°C**<br>**(Note 6)**|
|100V|700mΩ @VGS= 10V|0.76A|
||900mΩ @VGS= 6V|0.67A|



## **Features** 

- Low On-Resistance 

- Low Threshold 

- Fast Switching Speed 

- Low Gate Drive 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description** 

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Mechanical Data** 

- Case: SOT23 

## **Applications** 

- DC-DC Converters 

- Power Management Functions 

- Motor Control 

   - Case Material: Molded Plastic, “Green” Molding Compound.    UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Matte Tin Finish 

   - Weight: 0.008 grams (approximate) 

- Disconnect switches 

**==> picture [351 x 109] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT23  D<br>S<br>G D<br>S G<br>Top View  Device Symbol  Top View<br>Pin-Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|**Ordering Informationg Information Information**(Note 4)|
|---|---|---|---|---|
||||||
|**Part Number **|**Marking**|**Reel size (inches)**|**Tape width (mm)**|**Quantity per reel **|
|ZXMN10A07FTA|7N1|7|8|3,000|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free. 

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com 

## **Marking Information** 

7N1 = Product Type Marking Code 

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ZXMN10A07F Document number: DS33564 Rev. 6 - 2 

August 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

## **ZXMN10A07F** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|100|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current|Steady<br>State<br>@ V<br>@ V<br>@ V<br>@|@ VGS= 10V; TA = +25°C (Note 6)<br>@ VGS= 10V; TA = +70°C (Note 6)<br>@ VGS= 10V; TA = +100°C (Note 6)<br>@VGS= 10V; TA = +25°C(Note 5)|ID|0.8<br>0.6<br>0.5<br>0.7|A|
|Pulsed Drain Current(Note 7)|||IDM|3.5|A|
|Continuous Source Current(BodyDiode) (Note 6)|||IS|0.5|A|
|Pulsed Source Current(BodyDiode) (Note 7)|||ISM|3.5|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|
|**Characteristic**|**Symbol **|**Value**|**Unit**|
|Power Dissipation(Note 5)|PD|625|mW|
|Power Dissipation(Note 6)|PD|806|mW|
|Thermal Resistance,Junction to Ambient(Note 5)|RθJA|200|°C/W|
|Thermal Resistance,Junction to Ambient(Note 6)|RθJA|155|°C/W|
|Thermal Resistance,Junction to Leads(Note 8)|RθJL|194|°C/W|
|Operatingand Storage Temperature Range|TJ, TSTG|-55 to +150|°C|



Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR4 PCB measured at t ≤ 10 sec. 

8. Thermal resistance from junction to solder-point (at the end of the drain lead). 

## **Thermal Characteristics** 

**==> picture [349 x 278] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.7<br>R<br>DS(on) 0.6<br>1 Limited i<br>Pitty 7 NANTES TT SShz 0.50.4 Yr} |Ne] ft ff<br>100m DC<br>2500 eee 1s 100ms Hp SSH zz 0.3 NX<br>10m 10ms 0.2<br>1ms<br>Single Pulse 100µs 0.1<br>T amb =25°C<br>1m Prete FC I 0.0 aw<br>1 10 100 0 20 40 60 80 100 120 140 160<br>VDS  Drain-Source Voltage (V)  Temperature (°C)<br>Safe Operating Area Derating Curve<br>200 T amb =25°C Single Pulse<br>eo| eae ull SS0000 S T amb =25°C Hl<br>150 0 10 TS<br>D=0.5<br>100 Leber | | Agty a<br>hic ZS)<br>D=0.2 Single Pulse<br>50<br>eS! alee D=0.05 ee 1 SS<br>enim Zl D=0.1 Van SESH) Sesh ae neh, rest SSedt ae<br>0 eer Lh ANAM TT EH A<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>  Drain Current (A)<br>ID<br> Max Power Dissipation (W)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


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ZXMN10A07F Document number: DS33564 Rev. 6 - 2 

August 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|---|---|---|---|---|---|---|
|**OFFCHARACTERISTICS**|||||||
|Drain-Source Breakdown Voltage|BVDSS|100|—|—|V|VGS= 0V,ID= 250μA|
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~——~~|IDSS<br>|—<br>|—<br>|1.0<br>~~==~~<br>|µA<br>~~==~~<br>|VDS= 100V,VGS= 0V<br>~~==——~~|
|Gate-Source Leakage<br>~~——~~|IGSS<br>|—<br>|—<br>|100<br>~~==~~<br>|nA<br>~~==~~<br>|VGS= ±20V,VDS= 0V<br>~~==——~~|
|**ON CHARACTERISTICS**<br>~~————==~~<br>~~==——~~<br>~~——~~|||||||
|Gate Threshold Voltage<br>~~————==~~<br>~~——~~|VGS(th)<br>~~————==~~<br>|2<br>~~————==~~<br>|—<br>~~————==~~<br>|4<br>~~————==~~<br>~~==~~<br>|V<br>~~————==~~<br>~~==~~<br>|VDS= VGS,ID= 250μA<br>~~————==~~<br>~~==——~~|
|Static Drain-Source On-Resistance (Note 9)<br>~~————==~~<br>~~——~~|RDS (ON)<br>~~————==~~<br>|—<br>~~————==~~<br>|540<br>~~————==~~<br>|700<br>~~————==~~<br>~~==~~<br>|mΩ<br>~~————==~~<br>~~==~~<br>|VGS= 10V,ID= 1.5A<br>~~————==~~<br>~~==——~~|
||||700<br>~~————==~~<br>|900<br>~~————==~~<br>~~==~~<br>||VGS= 6V,ID= 1A<br>~~————==~~<br>~~==——~~|
|Forward Transconductance(Notes 9 & 11)<br>~~————==~~<br>~~——~~|gfs<br>~~————==~~<br>|—<br>~~————==~~<br>|1.6<br>~~————==~~<br>|—<br>~~————==~~<br>~~==~~<br>|S<br>~~————==~~<br>~~==~~<br>|VDS= 15V,ID= 1A<br>~~————==~~<br>~~==——~~|
|Diodes Forward Voltage(Note 9)<br>~~——~~|VSD<br>|—<br>|0.85<br>|0.95<br>~~==~~<br>|V<br>~~==~~<br>|TJ= +25°C,IS= 1.5A,VGS= 0V<br>~~==——~~|
|**DYNAMIC CHARACTERISTICS **<br>~~==——~~<br>~~——~~|||||||
|Input Capacitance(Notes 10 & 11)<br>~~——~~<br>~~——~~|Ciss<br>~~ee~~|—<br>~~ee~~|138<br>~~ee~~|280<br>~~==~~<br>~~ee~~|pF<br>~~==~~<br>~~ee~~<br>~~ee~~|VDS= 50V, VGS= 0V,<br>f = 1.0MHz<br>~~==——~~<br>~~ee~~|
|Output Capacitance(Notes 10 & 11)<br>~~——~~<br>~~——~~|Coss<br>~~ee~~|—<br>~~ee~~|12<br>~~ee~~|25<br>~~==~~<br>~~ee~~|||
|Reverse Transfer Capacitance(Notes 10 & 11)<br>~~——~~<br>~~——~~|Crss<br>~~ee~~|—<br>~~ee~~|6<br>~~ee~~|12<br>~~==~~<br>~~ee~~<br>~~ee~~|||
|Gate Resistance(Notes 10 & 11)<br>~~——~~<br>~~——~~|Rg<br>~~ee~~|—<br>~~ee~~|2<br>~~ee~~|4<br>~~==~~<br>~~ee~~<br>~~ee~~|Ω<br>~~==~~<br>~~ee~~<br>~~ee~~|f = 1MHz,VGS= 0V,VDS= 0V<br>~~==——~~<br>~~ee~~|
|Total Gate Charge(Notes 10 & 11)<br>~~—— ~~<br>~~——~~|Qg<br> ~~ee~~|—<br>~~ee~~|2.9<br>~~ee~~|6<br>~~==~~<br>~~ee~~<br>~~ee~~|nC<br>~~==~~<br>~~ee~~<br>~~ee~~|VGS= 10V, VDS= 50V,<br>ID= 1A<br>~~== ——~~<br>~~ee~~|
|Gate-Source Charge(Notes 10 & 11)<br> <br>~~——~~|Qgs<br> ~~ee~~|—<br>~~ee~~|0.7<br>~~ee~~|1.5<br>~~ee~~<br>~~ee~~|||
|Gate-Drain Charge(Notes 10 & 11)<br> <br>~~——~~|Qgd<br> ~~ee~~|—<br>~~ee~~|1<br>~~ee~~|2<br>~~ee~~<br>~~ee~~|||
|Reverse RecoveryTime(Note 11)<br> <br>~~——~~|trr<br> ~~ee~~|—<br>~~ee~~|27<br>~~ee~~|60<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|TJ= +25°C, IF= 1.8A,<br>di/dt = 100A/µs<br>~~ee~~<br>~~ee~~|
|Reverse RecoveryCharge(Note 11)<br>~~————~~|Qrr|—|12|—<br>~~ee~~|nC<br>~~ee~~||
|Turn-On DelayTime(Notes 10 & 11)<br>~~————~~|tD(on)|—|1.8|—<br>~~ee~~|ns<br>~~ee~~|VGS= 10V, VDD= 50V,<br>RG= 6Ω , ID= 1A<br>~~ee~~|
|Turn-On Rise Time(Notes 10 & 11)<br>~~————~~|tr|—|1.5|—<br>~~ee~~|||
|Turn-Off DelayTime(Notes 10 & 11)<br>~~————~~|tD(off)|—|4.1|—<br>~~ee~~|||
|Turn-Off Fall Time(Notes 10 & 11)<br>~~————~~|tf|—|2.1|—<br>~~ee~~|||



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

11. For design aid only, not subject to production testing. 

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ZXMN10A07F Document number: DS33564 Rev. 6 - 2 

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**A Product Line of Diodes Incorporated** 

**ZXMN10A07F** 

## **Typical Characteristics** 

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**----- Start of picture text -----**<br>
T = 25°C 10V 7V<br>6V<br>1 fa or ee St =<br>|| ee<br>5V<br>0.1 ae<br>4.5V<br>ZSpe ttt estt tJ<br>VGS<br>0.01 A<br>4V<br>= —— ===<br>0.1 1 10<br>VDS  Drain-Source Voltage (V)<br>Output Characteristics<br>1 ReaAn<br>Cd T = 150°C [7 |f7 | #J| +ift<br>0.1 — pf<br>T = 25°C<br>a ee ee | ee ee ee ee<br>ee ee a ee ee 2 ee ee ee<br>VDS = 10V<br>0.01<br>3 4 5 6<br>VGS  Gate-Source Voltage (V)<br>  Drain Current (A)<br>ID<br>  Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


## **Typical Transfer Characteristics** 

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**----- Start of picture text -----**<br>
T = 150°C 10V 7V<br>6V<br>i “EHH gar<br>1<br>UIE | AT 5V<br>4.5V<br>sae<br>0.1 4V<br>AAABS?)SS<br>BeZO 8 eee VGS<br>3.5V<br>0.01 oP e<br>0.1 1 10<br>VDS  Drain-Source Voltage (V)<br>Output Characteristics<br>2.0<br>1.8 VGS = 10V<br>1.6 ID = 1.5A R DS(on)<br>1.4<br>1.2<br>1.0<br>VGS(th)<br>0.8<br>0.6 VGS = VDS<br>0.4 I D = 250uA<br>0.2<br>0.0<br>-50 0 50 100 150<br>Tj  Junction Temperature (°C)<br>  Drain Current (A)<br>ID<br>GS(th)<br> and V<br>DS(on)<br>Normalised R<br>**----- End of picture text -----**<br>


**Normalised Curves v Temperature** 

**==> picture [242 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 ———— —<br>|—————a ee T = 150°C |[tT<br>A<br>r CAF<br>1<br>TET |a| K\if, |il.<br>= [| ft a<br>pf a<br>T = 25°C<br>mr Anes _ |<br>0.1 rT VT I aa<br>jt—————ft ft<br>0.4 0.6 0.8 1.0 1.2<br>VSD  Source-Drain Voltage (V)<br>Source-Drain Diode Forward Voltage<br>  Reverse Drain Current (A)<br>ISD<br>**----- End of picture text -----**<br>


**==> picture [212 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 ee<br>4.5V 5V 6V V GS<br>Yipf7A iv VL | | RePeeee a<br>ee<br>1 TPMTpeee| tf 7V TET =<br>——————— tH<br>10V<br>So<br>T = 25°C<br>peTUTE EE EET |<br>0.01 0.1 1<br>ID  Drain Current (A)<br>On-Resistance v Drain Current<br>(Ω)<br> Drain-Source On-Resistance<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


4 of 7 **www.diodes.com** 

ZXMN10A07F Document number: DS33564 Rev. 6 - 2 

August 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**ZXMN10A07F** 

## **Typical Characteristics** (cont.) 

**==> picture [420 x 159] intentionally omitted <==**

**----- Start of picture text -----**<br>
200 10<br>180 eeBU ee ee V GS  = 0V HoHLU I D  = 1.0A || | tT tt | Ty Wg<br>160 f = 1MHz 8<br>tt Jf Soo<br>140<br>pod Re<br>120 6<br>100 PoE CISS RE VDS = 50V<br>80 PE C OSS CRSS 4 pe<br>60 HE Ce HA tt<br>ER rr AEE<br>40 2<br>PA SR pf<br>20<br>0 CertSe ee ile meee 0 AEEVib i  EEEtote feb<br>1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VDS - Drain - Source Voltage (V) Q - Charge (nC)<br>Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge<br>C  Capacitance (pF)<br>  Gate-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


## **Test Circuits** 

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ZXMN10A07F Document number: DS33564 Rev. 6 - 2 

August 2012 © Diodes Incorporated 

**A Product Line of Diodes Incorporated ZXMN10A07F** | 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

**==> picture [357 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
A<br>SOT23<br>Dim  Min  Max  Typ<br>A  0.37  0.51  0.40<br>B  1.20 1.40 1.30<br>B C<br>C 2.30 2.50 2.40<br>D  0.89 1.03 0.915<br>F  0.45 0.60 0.535<br>mm H ==== G  1.78  2.05  1.83<br>H  2.80  3.00  2.90<br>K M J 0.013 0.10 0.05<br>K1 K  0.903 1.10 1.00<br>D K1  -  -  0.400<br>J F G L L  0.45 0.61  0.55<br>M  0.085 0.18  0.11<br>α 0°  8°  -<br>Hep GEES All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

**==> picture [168 x 100] intentionally omitted <==**

**----- Start of picture text -----**<br>
Y<br>Z<br>Saint C<br>X E<br>| Fah&] EP<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value (in mm)**|
|---|---|
|**Z**|2.9|
|**X**|0.8|
|**Y**|0.9|
|**C**|2.0|
|**E**|1.35|



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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2012, Diodes Incorporated 

**www.diodes.com** 

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---

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