# Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 2.9 A, 2.9 A, 0.12 ohm

![Product image](https://novapart.co/image/farnell:3944176/)

**URL**: https://novapart.co/products/ZXMC3AMCTA/dual-mosfet-complementary-n-and-p-channel-30-v-29
**SKU**: ZXMC3AMCTA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.3330
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | Complementary N and P Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | DFN3020B |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 2.45W |
| Power Dissipation P Channel | 2.45W |
| Drain Source Voltage Vds N Channel | 30V |
| Drain Source Voltage Vds P Channel | 30V |
| Continuous Drain Current Id N Channel | 2.9A |
| Continuous Drain Current Id P Channel | 2.9A |
| Drain Source On State Resistance N Channel | 0.12ohm |
| Drain Source On State Resistance P Channel | 0.21ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3944176/)

**A Product Line of Diodes Incorporated** 

## **ZXMC3AMC** [| 

## **30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|---|
|**Device**<br>**V(BR)DSS**<br>**RDS(on)**max<br>**ID **max<br>TA= 25°C<br>(Notes 4 & 7)<br>Q1<br>30V<br>120mΩ@ VGS= 10V<br>3.7A<br>180mΩ@ VGS = 4.5V<br>3.0A<br>Q2<br>-30V<br>210mΩ@ VGS= -10V<br>-2.7A<br>330mΩ@ VGS = -4.5V<br>-2.2A||||
|**Device**|**V(BR)DSS**|**RDS(on)**max|**ID **max<br>TA= 25°C<br>(Notes 4 & 7)|
|Q1|30V|120mΩ@ VGS= 10V|3.7A|
|||180mΩ@ VGS = 4.5V|3.0A|
|Q2|-30V|210mΩ@ VGS= -10V|-2.7A|
|||330mΩ@ VGS = -4.5V|-2.2A|



## **Description and Applications** 

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Features and Benefits** 

- Low profile package, for thin applications 

- Low RθJA, thermally efficient package 

- 2 

- • 6mm footprint, 50% smaller than TSOP6 and SOT23-6 

- Low on-resistance 

- Fast switching speed 

- **“Lead-Free”, RoHS Compliant (Note 1)** 

- **Halogen and Antimony Free. "Green" Device (Note 2)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

   - Case: DFN3020B-8 

   - Terminals: Pre-Plated NiPdAu leadframe 

   - Nominal package height: 0.8mm 

   - UL Flammability Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Solderable per MIL-STD-202, Method 208 

- MOSFET gate drive 

   - Weight: 0.013 grams (approximate) 

- LCD backlight inverters 

- Motor control 

- Portable applications 

DFN3020B-8 

**==> picture [528 x 124] intentionally omitted <==**

**----- Start of picture text -----**<br>
DFN3020B-8  D1 D2<br>D2 D2 D1 D1<br>D2 D1 G1 G2<br>S1 S2<br>&& G2 TOO S2 G1 S1 oo y (e s (=<br>Q1 N-Channel Q2 P-Channel<br>Pin 1<br>Top View  Bottom View  Bottom View<br>Pin-Out  Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 3) 

|**Part Number**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|---|---|---|---|---|
|ZXMC3AMCTA|C01|7|8|3000|



Notes: 1. No purposefully added lead 

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 

3. For packaging details, go to our website at http://www.diodes.com. 

## **Marking Information** 

**==> picture [19 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
C01<br>**----- End of picture text -----**<br>


C01 = Product Type Marking Code Top view, Dot Denotes Pin 1 

1 of 11 **www.diodes.com** 

ZXMC3AMC Document number: DS35088 Rev. 1 - 2 

December 2010 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** | ZETEX **ZXMC3AMC** ~~[|~~ 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic **|||**Symbol **|**N-channel –Q1**|**P-channel –Q2**|**Unit **|
|Drain-Source Voltage|||VDSS|30|-30|V|
|Gate-Source Voltage|||VGSS|±20|±20||
|Continuous Drain Current|VGS = 10V|(Notes4&7)|ID|3.7|-2.7|A|
|||TA= 70°C(Notes 4 & 7)||3.0|-2.2||
|||(Notes 3 & 7)||2.9|-2.1||
|Pulsed Drain Current|VGS = 10V|(Notes 6 & 7)|IDM|13|-9.2||
|Continuous Source Current(Bodydiode)||(Notes 4 & 7)|IS|3.2|-2.8||
|Pulse Source Current(Bodydiode)||(Notes 6 & 7)|ISM|13|-9.2||



**Thermal Characteristics** @TA = 25°C unless otherwise specified 

|**Thermal Characteristics **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified||||
|---|---|---|---|---|---|
|**Characteristic**||**Symbol **|**N-channel –Q1**|**P-channel –Q2**|**Unit**|
|Power Dissipation<br>Linear Derating Factor|(Notes 3 & 7)|PD|1.50<br>12||W<br>mW/°C|
||(Notes 4 & 7)||2.45<br>19.6|||
||(Notes 5 & 7)||1.13<br>9|||
||(Notes 5 & 8)||1.70<br>13.6|||
|Thermal Resistance, Junction to Ambient|(Notes 3 &7)|RθJA|83.3||°C/W|
||(Notes4&7)||51.0|||
||(Notes 5 &7)||111|||
||(Notes 5 & 8)||73.5|||
|Thermal Resistance,Junction to Lead|(Notes 7 & 9)|RθJL|17.1|||
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150||°C|



Notes: 3. For a device surface mounted on 28mm x 28mm (8cm[2] ) FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition.  The heatsink is split in half with the exposed drain pads connected to each half. 

4. Same as note (3) except the device is measured at t < 5 sec. 

5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm[2] ) FR4 PCB with high coverage of single sided 1oz copper. 

6. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs.  The pulse current is limited by the maximum junction temperature. 7. For a dual device with one active die. 

8. For dual device with 2 active die running at equal power. 

9. Thermal resistance from junction to solder-point (at the end of the drain lead). 

2 of 11 **www.diodes.com** 

ZXMC3AMC Document number: DS35088 Rev. 1 - 2 

December 2010 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

## **ZXMC3AMC** 

## **Thermal Characteristics** 

**==> picture [444 x 512] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 R Limited DS(ON) 10 R LimitedDS(ON)<br>bee a<br>1 1<br>PASSA ST Fatty we Oy ea<br>DC DC<br>1s 1s<br>Bo OSES FE<br>100m po 100ms 10ms ZT ST 100m poNEE 100ms 10ms SN<br>8 sq cm 2oz Cu 1ms 8 sq cm 2oz Cu 1ms<br>One active die 100us One active die 100us<br>10m Single Pulse, T amb =25°C 10m Single Pulse, T amb =25°C<br>Ed Ed<br>1 10 1 10<br>VDS  Drain-Source Voltage (V) -VDS  Drain-Source Voltage (V)<br>N-channel Safe Operating Area P-channel Safe Operating Area<br>90 2.0<br>80 8 sq cm 2oz Cu 10 sq cm 1oz Cu<br>One active die Two active die<br>TnL atl | | | | | Bae<br>1.5<br>8 sq cm 2oz Cu<br>60 ST TTLTTT TTAUTHAll NwNNO One active die rTrT|<br>D=0.5 Oeaa attUGee MAAN 1.0 PpPo NNSA 10 sq cm 1oz Cu<br>40 One active die<br>ese a FNS<br>age D=0.2 Single Pulse 0.5 SeeehONNeeee<br>20<br>a D=0.05 HI NS<br>ST TIN Tae D=0.1 | po UO<br>0 e000 0.0 PN<br>100µ 1m 10m 100m 1 10 100 1k 0 25 50 75 100 125 150<br>Pulse Width (s)  Temperature (°C)<br>Transient Thermal Impedance Derating Curve<br>3.5 225<br>3.0 T amb =25°C EeIT 2oz CuTwo active die — 200 eS 1oz Cu<br>T =150°C<br>2.5 Continuousj max TEa JVATty 175 RNDN@ San! One active die 1a 1oz Cu a<br>iam 150 NOS UE CT Two active die Co<br>2.0 |a 2oz Cu Le nUlipae| 125 PONSPREECEE =<br>One active die<br>1.5 | 1p60. — antl!| 100 <0EN i<br>Peers 75 |__|<br>1.0 P| | eT = 2oz Cu SS<br>1oz Cu 50 One active die<br>0.5 Pe Sn 1oz Cu Two active die | | 2oz Cu mo<br>ect One active die |} 25 =H Two active die seat<br>0.0 PT ET el 0 Pr Cri<br>0.1 1 10 100 0.1 1 10 100<br>Board Cu Area (sqcm) Board Cu Area (sqcm)<br>  Drain Current (A)ID   Drain Current (A)-ID<br>Thermal Resistance (°C/W)<br> Max Power Dissipation (W)<br> Dissipation (W)<br>D<br>P<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


## **Power Dissipation v Board Area** 

## **Thermal Resistance v Board Area** 

3 of 11 

ZXMC3AMC Document number: DS35088 Rev. 1 - 2 

December 2010 © Diodes Incorporated 

**www.diodes.com** 

**A Product Line of Diodes Incorporated** | ZETEX **ZXMC3AMC** ~~[|~~ 

## **Electrical Characteristics – Q1 N-Channel** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics – Q1 N-Channel**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics – Q1 N-Channel**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics – Q1 N-Channel**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics – Q1 N-Channel**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics – Q1 N-Channel**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics – Q1 N-Channel**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics – Q1 N-Channel**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics – Q1 N-Channel**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|---|
|||||||||
|**Characteristic **|**Symbol **|**Min**|**Typ **|**Max **|**Unit **|**Test Condition **||
|**OFF CHARACTERISTICS**||||||||
|Drain-Source Breakdown Voltage|BVDSS|30|-|-|V|ID= 250μA,VGS= 0V||
|Zero Gate Voltage Drain Current|IDSS|-|-|0.5|μA|VDS= 30V,VGS= 0V||
|Gate-Source Leakage|IGSS|-|-|±100|nA|VGS= ±20V,VDS= 0V||
|**ON CHARACTERISTICS**||||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(th)<br>~~ee~~|1.0<br>~~ee~~|-<br>~~ee~~|3.0<br>~~ee~~|V<br>~~ee~~|ID= 250μA,VDS= VGS<br>~~ee~~||
|Static Drain-Source On-Resistance (Note 10)<br>~~ee~~<br>~~_—~~|RDS (ON)<br>~~ee~~|-<br>~~ee~~|0.100<br>~~ee~~|0.120<br>~~ee~~|Ω<br>~~ee~~|VGS= 10V,ID= 2.5A<br>~~ee~~||
||||0.140<br>~~ee~~|0.180<br>~~ee~~||VGS= 4.5V,ID= 2.0A<br>~~ee~~||
|Forward Transconductance(Note 10 & 11)<br>~~ee~~<br>~~_—~~|gfs<br>~~ee~~|-<br>~~ee~~|3.5<br>~~ee~~|-<br>~~ee~~|S<br>~~ee~~|VDS= 10V,ID= 2.5A<br>~~ee~~||
|Diode Forward Voltage(Note 10)<br>~~_—~~<br>~~SSS~~|VSD<br>~~SSS~~|-<br>~~SSS~~|0.85<br>~~SSS~~|0.95<br>~~SSS~~|V<br>~~SSS~~|IS= 1.7A,VGS= 0V<br>~~SSS~~||
|Reverse Recover Time(Note 11)<br>~~_—~~<br>~~SSS~~|trr<br>~~SSS~~|-<br>~~SSS~~|17.7<br>~~SSS~~|-<br>~~SSS~~|ns<br>~~SSS~~|IS= 2.5A, di/dt= 100A/µs<br>~~SSS~~||
|Reverse Recover Charge(Note 11)<br>~~_—~~<br>~~SSS~~|Qrr<br>~~SSS~~|-<br>~~SSS~~|13.0<br>~~SSS~~|-<br>~~SSS~~|nC<br>~~SSS~~|||
|**DYNAMIC CHARACTERISTICS (Note 11)**<br>~~_—~~||||||||
|Input Capacitance<br>~~——~~|Ciss<br>~~——~~|-<br>~~——~~|190<br>~~——~~|-<br>~~——~~|pF<br>~~——~~|VDS= 25V, VGS= 0V,<br>f = 1.0MHz<br>~~——~~<br>~~ae~~||
|Output Capacitance<br>~~——~~|Coss<br>~~——~~|-<br>~~——~~|38<br>~~——~~|-<br>~~——~~|pF<br>~~——~~|||
|Reverse Transfer Capacitance<br>~~——~~<br>~~SaaS~~|Crss<br>~~——~~<br>~~SaaS~~|-<br>~~——~~|20<br>~~——~~|-<br>~~——~~<br>~~ae~~|pF<br>~~——~~<br>~~ae~~|||
|Total Gate Charge(Note 12)<br>~~——~~<br>~~SaaS~~|Qg<br>~~——~~<br>~~SaaS~~|-<br>~~——~~|2.3<br>~~——~~|-<br>~~——~~<br>~~ae~~|nC<br>~~——~~<br>~~ae~~|VGS= 4.5V<br>~~——~~<br>~~ae~~|VDS= 15V<br>ID= 2.5A<br>~~——~~<br>~~ae~~<br>~~ee~~|
|Total Gate Charge(Note 12)<br>~~SaaS~~|Qg<br>~~SaaS~~|-|3.9|-<br>~~ae~~|nC<br>~~ae~~|VGS= 10V<br>~~ae~~<br>~~ee~~||
|Gate-Source Charge(Note 12)<br>~~SaaS~~|Qgs<br>~~SaaS~~|-|0.6|-<br>~~ae~~|nC<br>~~ae~~|||
|Gate-Drain Charge(Note 12)<br>~~SaaS~~<br>~~—<—<—<—=——_——~~|Qgd<br>~~SaaS~~<br>~~—<—<—<—=——_——~~|-|0.9|-<br>~~ae~~|nC<br>~~ae~~<br>~~ee~~|||
|Turn-On DelayTime(Note 12)<br>~~SaaS~~<br>~~—<—<—<—=——_——~~|tD(on)<br>~~SaaS~~<br>~~—<—<—<—=——_——~~|-|1.7|-<br>~~ae~~|ns<br>~~ae~~<br>~~ee~~|VDS= 15V, ID = 2.5A<br>VGS= 10V, RG= 6Ω<br>~~ae~~<br>~~ee~~||
|Turn-On Rise Time(Note 12)<br>~~SaaS~~<br>~~—<—<—<—=——_——~~|tr<br>~~SaaS~~<br>~~—<—<—<—=——_——~~|-|2.3|-<br>~~ae~~|ns<br>~~ae~~<br>~~ee~~|||
|Turn-Off DelayTime(Note 12)<br>~~—<—<—<—=——_——~~|tD(off)<br>~~—<—<—<—=——_——~~|-|6.6|-|ns<br>~~ee~~|||
|Turn-Off Fall Time(Note 12)<br>~~—<—<—<—=——_——~~|tf<br>~~—<—<—<—=——_——~~|-|2.9|-|ns<br>~~ee~~|||



12. Switching characteristics are independent of operating junction temperature. 

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ZXMC3AMC Document number: DS35088 Rev. 1 - 2 

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**A Product Line of Diodes Incorporated** 

## **ZXMC3AMC** 

## **Typical Electrical Characteristics – Q1 N-Channel** 

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**----- Start of picture text -----**<br>
10 Fe T = 25°C tL 10V 7V 5V 4.5V 10 lie T = 150°C 10V 7V 5V 4.5V<br>SE eee ee eee eee eee — Se ee ee eee ee<br>ES, eS 4V — LE EEE 4V —<br>CCU | ar i anil<br>3.5V 3.5V<br>| ‘ZZ HH ee ZS,<br>3V<br>1 An 3V 1 |LK<br>2.5V<br>pelalla a VGS — SpillZeaeeee<br>2076 i re | FEL VGS [|<br>0.1 cI 2.5V 0.1 oe ee<br>2V<br>art ore ee —<br>ee eee eee OP? ee eee eee<br>0.1 1 10 0.1 1 10<br>VDS  Drain-Source Voltage (V) VDS  Drain-Source Voltage (V)<br>Output Characteristics Output Characteristics<br>10 1.6<br>aS VDS = 10V esrs rres rs er sy -——J V GS  = 10V —,A |<br>——--—_ 1.4 a I D  = 2.5A ma<br>a ee eee TC Fa R<br>DS(on)<br>ieee aA e 1.2 po<br>T = 150°C<br>1 SF|} Jf 1.0 Pea ~— ee eeeeee<br>affen —}ee ey) 2Af}A es|__| ee ee| ee_|__}ee  _|ee  _ 0.8 aeeePOTNS VGS(th)<br>T = 25°C<br>[7 4 0.6 V GS  = V DS SS<br>I D  = 250uA<br>0.1 AV CECE 0.4 —— ES<br>2.0 2.5 3.0 3.5 4.0 4.5 5.0 -50 0 50 100 150<br>VGS  Gate-Source Voltage (V) Tj  Junction Temperature (°C)<br>Typical Transfer Characteristics Normalised Curves v Temperature<br>TT 2.5V Co 3V 3.5V Co<br>4V V GS 10<br>Ata) ai LtA |ee| | ———|] | dT hv] hc<br>4.5V T = 150°C<br>1 ee |EEeee eee ee Oe aa aa Aae<br>a<br>a a Se a es ee eeee<br>Si ee eee Ae eee 2 5V —<br>Soteee at a ee 1 i<br>esAhDi] _——————SSS_—<br>Se ee 6dr, 7V a ey 2 ee ee 2 ee ee ee ee<br>T = 25°C<br>0.1 ———————————————— 10V |H+fF f+| ft| [{|]<br>EAH T = 25°C aaeeeAA ee 0.1 PfOC/ EEff<br>SS Sasi SS ESS SS SS SSSS<br>0.1 1 10 0.4 0.6 0.8 1.0 1.2<br>ID  Drain Current (A) VSD  Source-Drain Voltage (V)<br>On-Resistance v Drain Current Source-Drain Diode Forward Voltage<br>  Drain Current (A)   Drain Current (A)<br>ID ID<br>GS(th)<br> and V<br>DS(on)<br>  Drain Current (A)<br>ID<br>Normalised R<br>  Reverse Drain Current (A)<br> Drain-Source On-Resistance (W)DS(on) ISD<br>R<br>**----- End of picture text -----**<br>


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ZXMC3AMC Document number: DS35088 Rev. 1 - 2 

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## **ZXMC3AMC** 

## **Typical Electrical Characteristics – Q1 N-Channel - Continued** 

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**----- Start of picture text -----**<br>
300<br>a V  = 0V 7<br>GS<br>250 f = 1MHz<br>ee EE<br>Ce Se<br>200 ee<br>me C ISS<br>150 LI] C |=<br>NU OSS<br>100 C RSS<br>ee ae<br>po<br>50<br>lie<br>0 PT TT P=<br>0.1 1 10<br>VDS - Drain - Source Voltage (V)<br>Capacitance v Drain-Source Voltage<br>C  Capacitance (pF)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10<br>I D  = 2.5A a<br>8<br>a<br>a<br>6<br>es<br>ee<br>4 / V DS  = 15V<br>+++ 4<br>2 > ae<br>0 Yo<br>0 1 2 3 4<br>Q - Charge (nC)<br>Gate-Source Voltage v Gate Charge<br>  Gate-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


## **Test Circuits** 

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**----- Start of picture text -----**<br>
Q G<br>-— < eee EEE<br>V G Q GS Q GD<br>|<br>Charge<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Current<br>regulator<br>jp| Co S a<br>12V 50k Same as<br>‘L I D.U.T |<br>en eee|<br>V DS<br>O IG<br>D.U.T<br>ID<br>V GS<br>**----- End of picture text -----**<br>


## **Basic gate charge waveform** 

**Gate charge test circuit** 

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**----- Start of picture text -----**<br>
V DS<br>90% R D<br>M/[— f<br>| |<br>I V GS V DS<br>10% /N\ || R G VDD<br>V GS<br>lep!g—>— td(on) t(on) tr r—+le——>|<> t d(off) t(on) tr Fits factor 1 % I<br>**----- End of picture text -----**<br>


## **Switching time waveforms** 

## **Switching time test circuit** 

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ZXMC3AMC Document number: DS35088 Rev. 1 - 2 

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## **Electrical Characteristics – Q2 P-Channel** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics – Q2 P-Channel**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics – Q2 P-Channel**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics – Q2 P-Channel**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics – Q2 P-Channel**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics – Q2 P-Channel**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics – Q2 P-Channel**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics – Q2 P-Channel**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics – Q2 P-Channel**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|---|
|||||||||
|**Characteristic **|**Symbol **|**Min**|**Typ **|**Max **|**Unit **|**Test Condition **||
|**OFF CHARACTERISTICS**||||||||
|Drain-Source Breakdown Voltage|BVDSS|-30|-|-|V|ID= -250μA,VGS= 0V||
|Zero Gate Voltage Drain Current|IDSS|-|-|-0.5|μA|VDS= -30V,VGS= 0V||
|Gate-Source Leakage|IGSS|-|-|±100|nA|VGS= ±20V,VDS= 0V||
|**ON CHARACTERISTICS**||||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(th)<br>~~ee~~|-1.0<br>~~ee~~|-<br>~~ee~~|-3.0<br>~~ee~~|V<br>~~ee~~|ID= -250μA,VDS= VGS<br>~~ee~~||
|Static Drain-Source On-Resistance (Note 13)<br>~~ee~~<br>~~_—~~|RDS (ON)<br>~~ee~~|-<br>~~ee~~|0.150<br>~~ee~~|0.210<br>~~ee~~|Ω<br>~~ee~~|VGS= -10V,ID= -1.4A<br>~~ee~~||
||||0.280<br>~~ee~~|0.330<br>~~ee~~||VGS= -4.5V,ID= -1.1A<br>~~ee~~||
|Forward Transconductance(Note 13 & 14)<br>~~ee~~<br>~~_—~~|gfs<br>~~ee~~|-<br>~~ee~~|2.48<br>~~ee~~|-<br>~~ee~~|S<br>~~ee~~|VDS= -15V,ID= -1.4A<br>~~ee~~||
|Diode Forward Voltage(Note 13)<br>~~_—~~<br>~~SSS~~|VSD<br>~~SSS~~|-<br>~~SSS~~|-0.85<br>~~SSS~~|-0.95<br>~~SSS~~|V<br>~~SSS~~|IS= -1.1A,VGS= 0V<br>~~SSS~~||
|Reverse Recover Time(Note 14)<br>~~_—~~<br>~~SSS~~|trr<br>~~SSS~~|-<br>~~SSS~~|18.6<br>~~SSS~~|-<br>~~SSS~~|ns<br>~~SSS~~|IS= -0.95A, di/dt = 100A/µs<br>~~SSS~~||
|Reverse Recover Charge(Note 14)<br>~~_—~~<br>~~SSS~~|Qrr<br>~~SSS~~|-<br>~~SSS~~|14.8<br>~~SSS~~|-<br>~~SSS~~|nC<br>~~SSS~~|||
|**DYNAMIC CHARACTERISTICS (Note 14)**<br>~~_—~~||||||||
|Input Capacitance<br>~~——~~|Ciss<br>~~——~~|-<br>~~——~~|206<br>~~——~~|-<br>~~——~~|pF<br>~~——~~|VDS= -15V, VGS= 0V,<br>f = 1.0MHz<br>~~——~~<br>~~ae~~||
|Output Capacitance<br>~~——~~|Coss<br>~~——~~|-<br>~~——~~|59.3<br>~~——~~|-<br>~~——~~|pF<br>~~——~~|||
|Reverse Transfer Capacitance<br>~~——~~<br>~~SaaS~~|Crss<br>~~——~~<br>~~SaaS~~|-<br>~~——~~|49.2<br>~~——~~|-<br>~~——~~<br>~~ae~~|pF<br>~~——~~<br>~~ae~~|||
|Total Gate Charge(Note 15)<br>~~——~~<br>~~SaaS~~|Qg<br>~~——~~<br>~~SaaS~~|-<br>~~——~~|3.8<br>~~——~~|-<br>~~——~~<br>~~ae~~|nC<br>~~——~~<br>~~ae~~|VGS= -4.5V<br>~~——~~<br>~~ae~~|VDS= -15V<br>ID= -1.4A<br>~~——~~<br>~~ae~~<br>~~ee~~|
|Total Gate Charge(Note 15)<br>~~SaaS~~|Qg<br>~~SaaS~~|-|6.4|-<br>~~ae~~|nC<br>~~ae~~|VGS= -10V<br>~~ae~~<br>~~ee~~||
|Gate-Source Charge(Note 15)<br>~~SaaS~~|Qgs<br>~~SaaS~~|-|0.69|-<br>~~ae~~|nC<br>~~ae~~|||
|Gate-Drain Charge(Note 15)<br>~~SaaS~~<br>~~—<—<—<—=——_——~~|Qgd<br>~~SaaS~~<br>~~—<—<—<—=——_——~~|-|2.0|-<br>~~ae~~|nC<br>~~ae~~<br>~~ee~~|||
|Turn-On DelayTime(Note 15)<br>~~SaaS~~<br>~~—<—<—<—=——_——~~|tD(on)<br>~~SaaS~~<br>~~—<—<—<—=——_——~~|-|1.5|-<br>~~ae~~|ns<br>~~ae~~<br>~~ee~~|VDS= -15V, ID = -1A<br>VGS= -10V, RG= 6Ω<br>~~ae~~<br>~~ee~~||
|Turn-On Rise Time(Note 15)<br>~~SaaS~~<br>~~—<—<—<—=——_——~~|tr<br>~~SaaS~~<br>~~—<—<—<—=——_——~~|-|2.8|-<br>~~ae~~|ns<br>~~ae~~<br>~~ee~~|||
|Turn-Off DelayTime(Note 15)<br>~~—<—<—<—=——_——~~|tD(off)<br>~~—<—<—<—=——_——~~|-|11.3|-|ns<br>~~ee~~|||
|Turn-Off Fall Time(Note 15)<br>~~—<—<—<—=——_——~~|tf<br>~~—<—<—<—=——_——~~|-|7.5|-|ns<br>~~ee~~|||



15. Switching characteristics are independent of operating junction temperature. 

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ZXMC3AMC Document number: DS35088 Rev. 1 - 2 

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**A Product Line of Diodes Incorporated** 

## **ZXMC3AMC** 

## **Typical Electrical Characteristics – Q2 P-Channel** 

**==> picture [447 x 547] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 T = 25°C 10V 7V 5V 10 T = 150°C 10V 5V<br>Tet | O P”<br>aaee 4V a De2 ——=— = S5 2s = 4V oe<br>3.5V 3.5V<br>3V 3V<br>1 | KK 1 Bo22S eee<br>2.5V<br>ae eee (Yo<br>ida a FF ooo 2V r_<br>Fr nm iy 2V 0.1 aaa ll -V GS<br>0.1 id Seay Ae<br>1.5V<br>=| =| P. er -V of =a a<br>GS<br>ae |<br>0.01<br>0.01 el eT2<br>0.1 1 10 0.1 1 10<br>-VDS  Drain-Source Voltage (V) -VDS  Drain-Source Voltage (V)<br>Output Characteristics Output Characteristics<br>1.4<br>SS<br>-V DS  = 10V VGS = -10V<br>Po a ee ID = - 1.4A<br>a 1.2 R<br>DS(on)<br>1 1.0<br>See? 4enenEe<br>T = 150°C<br>2 ffi———| | | tt [yy] VGS(th)<br>ey / ee 0.8<br>T = 25 ° C VGS = VDS<br>I  = -250uA<br>D<br>0.1 0.6<br>1.5 2.0 2.5 3.0 3.5 4.0 4.5 -50 0 50 100 150<br>-VGS  Gate-Source Voltage (V) Tj  Junction Temperature (°C)<br>Typical Transfer Characteristics Normalised Curves v Temperature<br>10<br>vA 2V -VGS ee 2.5V ee | 3V T = 25°C 10 j f fee |<br>Fe 3.5V | | | | | | ff joj tern<br>T = 150°C<br>4V<br>ICI LI a 7a<br>5V 1<br>7 | Kf<br>1 ACT —ee rrr Fpss ee Seety eee pf fe<br>_—$—$— aan YK SF 0.1 PE<br>a AD ie 7V SSfFSSEE T = 25°C<br>reee| PfBy eeefe2 a<br>10V<br>0.1 a 0.01 7A)Ae<br>0.1 1 10 0.4 0.6 0.8 1.0 1.2 1.4<br>-ID  Drain Current (A) -VSD  Source-Drain Voltage (V)<br>On-Resistance v Drain Current Source-Drain Diode Forward Voltage<br>  Drain Current (A)   Drain Current (A)<br>D D<br>-I -I<br>GS(th)<br> and V<br>DS(on)<br>  Drain Current (A)<br>D<br>-I Normalised R<br>(Ω)<br>  Reverse Drain Current (A)<br>SD<br> Drain-Source On-Resistance  -I<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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ZXMC3AMC Document number: DS35088 Rev. 1 - 2 

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**A Product Line of Diodes Incorporated** 

## **ZXMC3AMC** 

## **Typical Electrical Characteristics – Q2 P-Channel - Continued** 

**==> picture [441 x 545] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>350 a V GS  = 0V _ I D  = -1.4A 7<br>300 SSTPR C ISS f = 1MHz =4 8 PTTLpi | tTTE | tT TyEA<br>250 ee,ee C SeeRe = 6 EEREPTT TT ECLCLCTLCKW Ae<br>OSS<br>200 Se ETT<br>OA S<br>4<br>150 PSE Pt tt tT tT PA Tt<br>PON EH<br>100 C RSS 2<br>e e e | YTJYTTT tt tt | tt<br>eee<br>50 aPSee 0 TATyAEE ELL- V DS  = -15V ||_<br>1 10 0 1 2 3 4 5 6<br>-VDS - Drain - Source Voltage (V) Q - Charge (nC)<br>Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge<br>Current<br>regulator<br>QG<br>woe | |p o o<br>12V  0.2 F  50k  Same as<br>D.U.T<br>|<br>VG  QGS  QGD<br><«—_ + |<____ | b a| at TTT| VDS<br>©) IG<br>D.U.T<br>ID<br>ar, — V ° GS  |<br>Charge  I<br>Basic gate charge waveform  Gate charge test circuit<br>ff \ VW 90% VDS  RD<br>I<br>VGS  VDS<br>RG  VDD<br>! A 10%  |<br>| Ni || VGS  Pulse width  -  1 S<br>Duty factor 0.1%<br>tr  td(off)  tr  td(on)<br>t(on)  t(on)<br>C  Capacitance (pF)<br>  Gate-Source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


## **Test Circuits** 

**Switching time waveforms** 

**Switching time test circuit** 

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ZXMC3AMC Document number: DS35088 Rev. 1 - 2 

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**A Product Line of Diodes Incorporated** | **ZXMC3AMC** | 

## **Package Outline Dimensions** 

**==> picture [310 x 156] intentionally omitted <==**

**----- Start of picture text -----**<br>
A A3 DFN3020B-8<br>Dim Min  Max  Typ<br>Ll A1 oosst Fae A  0.77 0.83 0.80<br>A1  0 0.05 0.02<br>D A3 -  -  0.15<br>b 0.25 0.35 0.30<br>D  2.95 3.075 3.00<br>D2  0.82 1.02  0.92<br>D4  1.01 1.21  1.11<br>D4 D4<br>e -  -  0.65<br>D2 E  1.95 2.075 2.00<br>E<br>E2 E2  0.43 0.63 0.53<br>Z b e L  0.25 0.35 0.30<br>Z  -  -  0.375<br>L Ha e ——— All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

**==> picture [136 x 108] intentionally omitted <==**

**----- Start of picture text -----**<br>
C X<br>Y1<br>G1<br>G<br>Y2<br>Y<br>ET<br>X1<br>UE OU<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value (in mm)**|
|---|---|
|**C**|0.650|
|**G**|0.285|
|**G1 **|0.090|
|**X**|0.400|
|**X1**|1.120|
|**Y**|0.730|
|**Y1**|0.500|
|**Y2**|0.365|



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ZXMC3AMC Document number: DS35088 Rev. 1 - 2 

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**A Product Line of Diodes Incorporated** | ZETEX **ZXMC3AMC** ~~[|~~ 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2010, Diodes Incorporated 

**www.diodes.com** 

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- [Supplier page](https://es.farnell.com/diodes-inc/zxmc3amcta/mosfet-dual-n-p-ch-30v-2-9a/dp/3944176)
---

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