# Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 4.4 A, 4.4 A, 0.07 ohm

![Product image](https://novapart.co/image/farnell:4318346/)

**URL**: https://novapart.co/products/ZXMC3A17DN8TA/dual-mosfet-complementary-n-and-p-channel-30-v-44
**SKU**: ZXMC3A17DN8TA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.4820
**Stock**: 10+
**Lead Time**: 233 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | Complementary N and P Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | SOIC |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 2.1W |
| Power Dissipation P Channel | 2.1W |
| Drain Source Voltage Vds N Channel | 30V |
| Drain Source Voltage Vds P Channel | 30V |
| Continuous Drain Current Id N Channel | 4.4A |
| Continuous Drain Current Id P Channel | 4.4A |
| Drain Source On State Resistance N Channel | 0.07ohm |
| Drain Source On State Resistance P Channel | 0.07ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4318346/)

**ZXMC3A17DN8** 

## **COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET** 

## **SUMMARY** 

**N-Channel : V(BR)DSS=  30V : RDS(on)= 0.050 ; ID=  5.4A P-Channel : V(BR)DSS= -30V : RDS(on)= 0.070 ; ID= -4.4A** 

## **DESCRIPTION** 

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage,  power management applications. 

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## **SO8** 

## **FEATURES** 

- Low on-resistance 

- Fast switching speed 

- Low threshold 

- Low gate drive 

- Low profile SOIC package 

## **APPLICATIONS** 

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**Q1 = N-channel** 

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**Q2 = P-channel** 

- Motor drive 

- LCD backlighting 

## **ORDERING INFORMATION** 

|**DEVICE**|**REEL SIZE**|**TAPE WIDTH**|**QUANTITY PER REEL**|
|---|---|---|---|
|ZXMC3A17DN8TA|7”|12mm|500 units|
|ZXMC3A17DN8TC|13”|12mm|2500 units|



## **PINOUT** 

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## **DEVICE MARKING** 

- ZXMC 3A17 

Top View 

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## **ZXMC3A17DN8** 

## **ADVANCE INFORMATION** 

## **ABSOLUTE MAXIMUM RATINGS** 

|**ABSOLUTE MAXIMUM RATINGS**|||||
|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**N-channel**|**P-channel**|**UNIT**|
|Drain-Source Voltage|VDSS|30|-30|V|
|Gate-Source Voltage|VGS|±20|±20|V|
|Continuous Drain Current<br>(VGS= 10V; TA=25°C) (b)(d)<br>(VGS= 10V; TA=70°C) (b)(d)<br>(VGS= 10V; TA=25°C) (a)(d)|ID|5.4<br>4.3<br>4.1|-4.4<br>-3.6<br>-3.4|A|
|Pulsed Drain Current (c)|IDM|23|-20|A|
|Continuous Source Current (Body Diode) (b)|IS|2.6|-2.5|A|
|Pulsed Source Current (Body Diode) (c)|ISM|23|-20|A|
|Power Dissipation at TA =25°C (a) (d)<br>Linear Derating Factor|PD|1.25<br>10||W<br>mW/°C|
|Power Dissipation at TA =25°C (a) (e)<br>Linear Derating Factor|PD|1.8<br>14||W<br>mW/°C|
|Power Dissipation at TA =25°C (b) (d)<br>Linear Derating Factor|PD|2.1<br>17||W<br>mW/°C|
|Operating and Storage Temperature Range|Tj, Tstg|-55 to +150||°C|



## **THERMAL RESISTANCE** 

|**THERMAL RESISTANCE**||||
|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**VALUE**|**UNIT**|
|Junction to Ambient (a) (d)|R�JA|100|°C/W|
|Junction to Ambient (a) (e)|R�JA|70|°C/W|
|Junction to Ambient (b) (d)|R�JA|60|°C/W|



## **NOTES:** 

(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 

(b) For a dual device surface mounted on FR4 PCB measured at t � 10 sec. 

(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width = 300�s - pulse width limited by maximum junction temperature. 

(d)For a dual device with one active die. 

(e) For dual device with two active die running at equal power. 

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## **ADVANCE INFORMATION** 

## **ZXMC3A17DN8** 

## **CHARACTERISTICS** 

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## **ZXMC3A17DN8** 

## **ADVANCE INFORMATION** 

## **N-CHANNEL** 

## **ELECTRICAL CHARACTERISTICS** (at Tamb = 25°C unless otherwise stated) 

|**PARAMETER**|**SYMBOL**|**MIN.**|**TYP.**|**MAX.**|**UNIT**|**CONDITIONS**|
|---|---|---|---|---|---|---|
|**STATIC**|||||||
|Drain-Source Breakdown<br>Voltage|V(BR)DSS|30|||V|ID= 250�A, VGS=0V|
|Zero Gate Voltage Drain<br>Current|IDSS|||0.5|�A|VDS=30V, VGS=0V|
|Gate-Body Leakage|IGSS|||100|nA|VGS=±20V, VDS=0V|
|Gate-Source Threshold<br>Voltage|VGS(th)|1.0|||V|ID= 250�A, VDS=VGS|
|Static Drain-Source On-State<br>Resistance (1)|RDS(on)|||0.050<br>0.065|�<br>�|VGS= 10V, ID= 7.8A<br>VGS= 4.5V, ID= 6.8A|
|Forward<br>Transconductance (1) (3)|gfs||10||S|VDS= 10V, ID= 7.8A|
|**DYNAMIC (3)**|||||||
|Input Capacitance|Ciss||600||pF|VDS= 25V, VGS=0V<br>f=1MHz|
|Output Capacitance|Coss||104||pF||
|Reverse Transfer Capacitance|Crss||58.5||pF||
|**SWITCHING (2) (3)**|||||||
|Turn-On-Delay Time|td(on)||2.9||ns|VDD= 15V, ID=3.5A<br>RG ≅6.0�,<br>VGS = 10V|
|Rise Time|tr||6.4||ns||
|Turn-Off Delay Time|td(off)||16||ns||
|Fall Time|tf||11.2||ns||
|Gate Charge|Qg||6.9||nC|VDS= 15V, VGS= 5V<br>ID= 3.5A|
|Total Gate Charge|Qg||12.2||nC|VDS= 15V, VGS= 10V<br>ID= 3.5A|
|Gate-Source Charge|Qgs||1.7||nC||
|Gate-Drain Charge|Qgd||2.4||nC||
|**SOURCE-DRAIN DIODE**|||||||
|Diode Forward Voltage (1)|VSD||0.85|0.95|V|Tj=25°C, IS= 3.2A,<br>VGS=0V|
|Reverse Recovery Time (3)|trr||18.8||ns|Tj=25°C, IF= 3.5A,<br>di/dt=100A/�s|
|Reverse Recovery Charge (3)|Qrr||14.1||nC||



(1) Measured under pulsed conditions. Pulse width � 300ms; Duty cycle � 2%. 

(2) Switching characteristics are independent of operating junction temperature. 

(3) For design aid only, not subject to production testing. 

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## **ADVANCE INFORMATION** 

## **ZXMC3A17DN8** 

## **P-CHANNEL** 

**ELECTRICAL CHARACTERISTICS** (at Tamb = 25°C unless otherwise stated) 

|**PARAMETER**|**SYMBOL**|**MIN.**|**TYP.**|**MAX.**|**UNIT**|**CONDITIONS**|
|---|---|---|---|---|---|---|
|**STATIC**|||||||
|Drain-Source Breakdown<br>Voltage|V(BR)DSS|-30|||V|ID= -250�A, VGS=0V|
|Zero Gate Voltage Drain<br>Current|IDSS|||-1.0|�A|VDS= -30V, VGS=0V|
|Gate-Body Leakage|IGSS|||100|nA|VGS=±20V, VDS=0V|
|Gate-Source Threshold<br>Voltage|VGS(th)|-1.0|||V|ID= -250�A, VDS=VGS|
|Static Drain-Source<br>On-State Resistance (1)|RDS(on)|||0.070<br>0.110|�<br>�|VGS= -10V, ID= -3.2A<br>VGS= -4.5V, ID= -2.5A|
|Forward<br>Transconductance<br>(1) (3)|gfs||6.4||S|VDS= -15V, ID= -3.2A|
|**DYNAMIC (3)**|||||||
|Input Capacitance|Ciss||630||pF|VDS= -15V, VGS=0V<br>f=1MHz|
|Output Capacitance|Coss||113||pF||
|Reverse Transfer<br>Capacitance|Crss||78||pF||
|**SWITCHING (2) (3)**|||||||
|Turn-On-Delay Time|td(on)||1.7||ns|VDD= -15V, ID= -1A<br>RG ≅6.0�,<br>VGS= -10V|
|Rise Time|tr||2.9||ns||
|Turn-Off Delay Time|td(off)||29.2||ns||
|Fall Time|tf||8.7||ns||
|Gate Charge|Qg||8.3||nC|VDS= -15V, VGS= -5V<br>ID= -3.2A|
|Total Gate Charge|Qg||15.8||nC|VDS= -15V, VGS=<br>-10V<br>ID= -3.2A|
|Gate-Source Charge|Qgs||1.8||nC||
|Gate Drain Charge|Qgd||2.8||nC||
|**SOURCE-DRAIN DIODE**|||||||
|Diode Forward Voltage (1)|VSD||-0.85|-0.95|V|Tj=25°C, IS= -2.5A,<br>VGS=0V|
|Reverse Recovery Time (3)|trr||19.5||ns|Tj=25°C, IS= -1.7A,<br>di/dt=100A/�s|
|Reverse Recovery Charge (3)|Qrr||16.3||nC||



NOTES: 

(1) Measured under pulsed conditions. Pulse width � 300ms; Duty cycle � 2%. 

(2) Switching characteristics are independent of operating junction temperature. 

(3) For design aid only, not subject to production testing. 

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## **ZXMC3A17DN8** 

## **ADVANCE INFORMATION** 

## **N-CHANNEL TYPICAL CHARACTERISTICS** 

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## **ADVANCE INFORMATION** 

## **ZXMC3A17DN8** 

## **N-CHANNEL TYPICAL CHARACTERISTICS** 

**ISSUE 1 - OCTOBER 2005** 

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## **ZXMC3A17DN8** 

## **ADVANCE INFORMATION** 

## **P-CHANNEL TYPICAL CHARACTERISTICS** 

**ISSUE 1 - OCTOBER 2005** 

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## **ADVANCE INFORMATION** 

## **ZXMC3A17DN8** 

## **P-CHANNEL TYPICAL CHARACTERISTICS** 

**ISSUE 1 - OCTOBER 2005** 

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## **ZXMC3A17DN8** 

## **SO8 PACKAGE OUTLINE (Conforms to JEDEC MS-012AA Iss. C)** 

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Controlling dimensions are in millimeters. Approximate conversions are given in inches 

## **PACKAGE DIMENSIONS** 

|**DIM**|**Millimeters**|**Millimeters**|**Inches**|**Inches**|**DIM**|**Millimeters**|**Millimeters**|**Inches**|**Inches**|
|---|---|---|---|---|---|---|---|---|---|
||**Min**|**Max**|**Min**|**Max**||**Min**|**Max**|**Min**|**Max**|
|A|1.35|1.75|0.053|0.069|e|1.27 BSC||0.050 BSC||
|A1|0.10|0.25|0.004|0.010|b|0.33|0.51|0.013|0.020|
|D|4.80|5.00|0.189|0.197|c|0.19|0.25|0.008|0.010|
|H|5.80|6.20|0.228|0.244|�|0°|8°|0°|8°|
|E|3.80|4.00|0.150|0.157|h|0.25|0.50|0.010|0.020|
|L|0.40|1.27|0.016|0.050|-|-|-|-|-|



## © Zetex Semiconductors plc 2005 

**Europe Americas Asia Pacific Corporate Headquarters** Zetex GmbH Zetex Inc Zetex (Asia) Ltd Zetex Semiconductors plc Streitfeldstraße 19 700 Veterans Memorial Hwy 3701-04 Metroplaza Tower 1 Zetex Technology Park D-81673 München Hauppauge, NY 11788 Hing Fong Road, Kwai Fong Chadderton, Oldham, OL9 9LL Germany USA Hong Kong United Kingdom Telefon: (49) 89 45 49 49 0 Telephone: (1) 631 360 2222 Telephone: (852) 26100 611 Telephone (44) 161 622 4444 Fax: (49) 89 45 49 49 49 Fax: (1) 631 360 8222 Fax: (852) 24250 494 Fax: (44) 161 622 4446 europe.sales@zetex.com usa.sales@zetex.com asia.sales@zetex.com hq@zetex.com 

These offices are supported by agents and distributors in major countries world-wide. 

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. 

For the latest product information, log on to www.zetex.com 

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## Links

- [View this product on Novapart](https://novapart.co/products/ZXMC3A17DN8TA/dual-mosfet-complementary-n-and-p-channel-30-v-44)
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- [Supplier page](https://es.farnell.com/diodes-inc/zxmc3a17dn8ta/mosfet-n-p-ch-30v-4-4a-soic/dp/4318346)
---

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