# Power MOSFET, N Channel, 20 V, 1.7 A, 0.18 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:4318706/)

**URL**: https://novapart.co/products/ZXM61N02F/power-mosfet-n-channel-20-v-17-a-018-ohm-sot-23
**SKU**: ZXM61N02F
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1350
**Stock**: 10+
**Lead Time**: 316 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 625mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.7A |
| Drain Source On State Resistance | 0.18ohm |
| Gate Source Threshold Voltage Max | 700mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4318706/)

**ZXM61N02F** 

## **20V N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **SUMMARY** 

## **V(BR)DSS=20V; RDS(ON)=0.18** � ; **ID=1.7A** 

## **DESCRIPTION** 

This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. 

**==> picture [46 x 57] intentionally omitted <==**

## **SOT23** 

## **FEATURES** 

- Low on-resistance 

- Fast switching speed 

- Low threshold 

- Low gate drive 

- SOT23 package 

## **APPLICATIONS** 

- DC - DC Converters 

- Power Management Functions 

- Disconnect switches 

- Motor control 

## **ORDERING INFORMATION** 

|DEVICE|REEL SIZE<br>(inches)|TAPE WIDTH (mm)|QUANTITY<br>PER REEL|
|---|---|---|---|
|ZXM61N02FTA|7|8mm embossed|3000  units|
|ZXM61N02FTC|13|8mm embossed|10000 units|



Top View 

## **DEVICE MARKING** 

- N02 

ISSUE 1 - JUNE 2004 

**1** 

## **ZXM61N02F** 

## **ABSOLUTE MAXIMUM RATINGS.** 

|**ABSOLUTE MAXIMUM RATINGS.**||||
|---|---|---|---|
|PARAMETER|SYMBOL|LIMIT|UNIT|
|Drain-Source Voltage|VDSS|20|V|
|Gate Source Voltage|VGS|±12|V|
|Continuous Drain Current (VGS=4.5V; TA=25°C)(b)<br>(VGS=4.5V; TA=70°C)(b)|ID|1.7<br>1.3|A|
|Pulsed Drain Current (c)|IDM|7.4|A|
|Continuous Source Current (Body Diode) (b)|IS|0.8|A|
|Pulsed Source Current (Body Diode)|ISM|7.4|A|
|Power Dissipation at TA=25°C (a)<br>Linear Derating Factor|PD|625<br>5|mW<br>mW/°C|
|Power Dissipation at TA=25°C (b)<br>Linear Derating Factor|PD|806<br>6.4|mW<br>mW/°C|
|Operating and Storage Temperature Range|Tj:Tstg|-55 to +150|°C|



## **THERMAL RESISTANCE** 

|**THERMAL RESISTANCE**||||
|---|---|---|---|
|PARAMETER|SYMBOL|VALUE|UNIT|
|Junction to Ambient (a)|RθJA|200|°C/W|
|Junction to Ambient (b)|RθJA|155|°C/W|



## NOTES 

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions 

(b) For a device surface mounted on FR4 PCB measured at t�5 secs. 

(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. 

ISSUE 1 - JUNE 2004 

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**ZXM61N02F** 

## **CHARACTERISTICS** 

**==> picture [413 x 337] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 1.0<br>Refer Note (a)<br>0.8<br>Refer Note (b)<br>1 Refer Note (a)<br>0.6<br>DC 0.4<br>100m 1s<br>100ms<br>10ms 0.2<br>1ms<br>100us<br>10m 0<br>0.1 1 10 100 0 20 40 60 80 100 120 140 160<br>VDS - Drain-Source Voltage (V) T - Temperature (°C)<br>Safe Operating Area Derating Curve<br>180 240<br>Refer Note (b) Refer Note (a)<br>160<br>200<br>140<br>120 160<br>100<br>120<br>80 D=0.5 D=0.5<br>60 80<br>40 D=0.2 D=0.2<br>40<br>20 D=0.1 D=0.1<br>D=0.05 Single Pulse D=0.05 Single Pulse<br>0 0<br>0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Transient Thermal Impedance<br> - Drain Current (A)<br>ID<br>Max Power Dissipation (Watts)<br>Thermal Resistance (°C/W) Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


ISSUE 1 - JUNE 2004 

**3** 

## **ZXM61N02F** 

## **ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).** 

|PARAMETER|SYMBOL|MIN.|TYP.(3)|MAX.|UNIT|CONDITIONS.|
|---|---|---|---|---|---|---|
|**STATIC**|||||||
|Drain-Source  Breakdown Voltage|V(BR)DSS|20|||V|ID=250µA, VGS=0V|
|Zero Gate Voltage Drain Current|IDSS|||1|µA|VDS=20V, VGS=0V|
|Gate-Body Leakage|IGSS|||100|nA|VGS=±12V, VDS=0V|
|Gate-Source Threshold Voltage|VGS(th)|0.7|||V|ID=250µA, VDS= VGS|
|Static Drain-Source On-State Resistance<br>(1)|RDS(on)|||0.18<br>0.24|Ω<br>Ω|VGS=4.5V, ID=0.93A<br>VGS=2.7V, ID=0.47A|
|Forward Transconductance (3)|gfs|1.3|||S|VDS=10V,ID=0.47A|
|**DYNAMIC**(3)|||||||
|Input Capacitance|Ciss||160||pF|VDS=15 V, VGS=0V,<br>f=1MHz|
|Output Capacitance|Coss||50||pF||
|Reverse Transfer Capacitance|Crss||30||pF||
|**SWITCHING**(2) (3)|||||||
|Turn-On Delay Time|td(on)||2.4||ns|VDD=10V, ID=0.93A<br>RG=6.2Ω, RD=11Ω<br>(refer to test<br>circuit)|
|Rise Time|tr||4.2||ns||
|Turn-Off Delay Time|td(off)||7.8||ns||
|Fall Time|tf||4.2||ns||
|Total Gate Charge|Qg|||3.4|nC|VDS=16V,VGS=4.5V,<br>ID=0.93A<br>(refer to test<br>circuit)|
|Gate-Source Charge|Qgs|||0.41|nC||
|Gate-Drain Charge|Qgd|||0.8|nC||
|**SOURCE-DRAIN DIODE**|||||||
|Diode Forward Voltage (1)|VSD|||0.95|V|TJ=25°C, IS=0.93A,<br>VGS=0V|
|Reverse Recovery Time (3)|trr||12.9||ns|TJ=25°C, IF=0.93A,<br>di/dt= 100A/µs|
|Reverse Recovery Charge (3)|Qrr||5.2||nC||



NOTES 

(1) Measured under pulsed conditions. Width ≤ 300 µ s. Duty cycle ≤ 2% . 

(2) Switching characteristics are independent of operating junction temperature. 

- (3) For design aid only, not subject to production testing. 

ISSUE 1 - JUNE 2004 

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**ZXM61N02F** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [413 x 503] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 +25°C VGS  100 +150°C  VGS<br> 6V<br>10 3V6V4V 10 3.5V4V<br>        3V<br>2.5V<br>        2.5V<br>1 2V 1 2V<br>        1.5V<br>100m 100m<br>1.5V<br>10m 10m<br>0.1 1 10 0.1 1 10<br>VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V)<br>Output Characteristics Output Characteristics<br>10 VDS=10V 1.6 RDS(on)<br>1.4<br>1 1.2 IDV=0.93AGS=4.5V<br>1.0<br>T=150°C<br>T=25°C<br>0.1 0.8 IDV=250µAGS=VDS<br>0.6<br>VGS(th)<br>0.01 0.4<br>1.5 2.5 3.5 4.5 -100 0 100 200<br>VGS - Gate-Source Voltage (V) TJ- Junction Temperature (°C)<br>Transfer Characteristics Normalised RDS(on) and VGS(th)<br> v Temperature<br>10 100<br>10<br>1<br>1 100m<br>VGS=2.7V<br>VGS=4.5V T=150°C<br>10m T=25°C<br>1m<br>0.1 100µ<br>0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>ID - Drain Current (A) VSD - Source-Drain Voltage (V)<br>On-Resistance v Drain Current Source-Drain Diode  Forward Voltage<br> - Drain Current (A)  - Drain Current (A)<br>ID ID<br>GS(th)<br> and V<br>DS(on)<br> - Drain Current (A)<br>ID<br>Normalised R<br>) Ω<br> - Reverse Drain Current (A)<br> - Drain Source On Resistance (DS(on) ISD<br>R<br>**----- End of picture text -----**<br>


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## **ZXM61N02F** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [414 x 505] intentionally omitted <==**

**----- Start of picture text -----**<br>
400 5<br>ID=0.93A<br>VGS=0V<br>Ciss f=1MHz 4 VDS=16V<br>300 Coss<br>Crss<br>3<br>200<br>2<br>100<br>1<br>0 0<br>0.1 1 10 100 0 1 2 3<br>VDS - Drain-Source Voltage (V) Q - Charge (nC)<br>Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge<br>Basic Gate Charge Waveform Gate Charge Test Circuit<br>Switching Time Waveforms Switching Time Test Circuit<br>C - Capacitance (pF)<br> - Gate Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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## **ZXM61N02F** 

## **PACKAGE DIMENSIONS** 

## **PAD LAYOUT DETAILS** 

|||||||||||N|N|||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|DIM|||Millimetres||||||||Inches|||||
||||Min||||Max||||Min|||Max||
|A|||2.67||||3.05||||0.105|||0.120||
|B|||1.20||||1.40||||0.047|||0.055||
|C|||–||||1.10||||–|||0.043||
|D|||0.37||||0.53||||0.0145|||0.021||
|F|||0.085||||0.15||||0.0033|||0.0059||
|G|||NOM 1.9||||||||NOM 0.075|||||
|K|||0.01||||0.10||||0.0004|||0.004||
|L|||2.10||||2.50||||0.0825|||0.0985||
|N|||NOM 0.95||||||||NOM  0.037|||||



**==> picture [149 x 190] intentionally omitted <==**

Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 

||<br>Fax: (44)161 622 4420|||
|---|---|---|---|
|Zetex GmbH|Zetex Inc.|Zetex (Asia) Ltd.|These are supported by|
|Streitfeldstraße 19|47 Mall Drive, Unit 4|3510 Metroplaza, Tower 2|agents and distributors in|
|D-81673 München|Commack NY 11725|Hing Fong Road,|major countries world-wide|
|Germany|USA|Kwai Fong, Hong Kong|Zetex plc 1999|
|Telefon: (49) 89 45 49 49 0|Telephone: (516) 543-7100|Telephone:(852) 26100 611||
|Fax: (49) 89 45 49 49 49|Fax: (516) 864-7630|Fax: (852) 24250 494|**Internet:http://www.zetex.com**|



This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. 

ISSUE 1 - JUNE 2004 

**7** 



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- [Supplier page](https://es.farnell.com/diodes-inc/zxm61n02f/mosfet-n-ch-20v-1-7a-sot-23/dp/4318706)
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