# Bipolar (BJT) Single Transistor, NPN, 100 V, 6 A, 3 W, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:3943357/)

**URL**: https://novapart.co/products/ZX5T853GTA/bipolar-bjt-single-transistor-npn-100-v-6-a-3-w
**SKU**: ZX5T853GTA
**Manufacturer**: DIODES INC.
**Price**: €0.3840
**Stock**: 200+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | ZX Series |
| Qualification | - |
| Power Dissipation | 3W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 130MHz |
| Transistor Case Style | SOT-223 |
| Dc Current Gain Hfe Min | 10hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 6A |
| Collector Emitter Voltage Max | 100V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943357/)

- **ZX5T853G** 

- **Green** 

- **100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223** 

- **Features Mechanical Data**  BVCEO > 100V  Case: SOT223  IC = 6A High Continuous Collector Current  Case Material: Molded Plastic. “Green” Molding Compound;  ICM = 10A Peak Pulse Current UL Flammability Rating 94V-0  Low Saturation Voltage VCE(sat) < 35mV  Moisture Sensitivity: Level 1 per J-STD-020  RSAT = 36mΩ at 6A for a Low Equivalent On-Resistance  Terminals: Finish - Matte Tin Plated Leads;  hFE Specified Up to 10A for a High Gain Hold Up Solderable per MIL-STD-202, Method 208  Complementary PNP Type: ZX5T953G  Weight: 0.112 grams (Approximate)  **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)**  **Halogen and Antimony Free. “Green” Device (Note 3) Applications**  **Qualified to AEC-Q101 Standards for High Reliability**  Motor Driving  Line Switching  High Side Switches 

- SOT223 **C B** ~~@ :~~ **E** 

- Top View Device Symbol Top View Pin-Out 

## **Ordering Information** (Note 4) 

||**Product**||**Compliance**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|---|---|---|---|---|---|---|---|
|ZX5T853GTA|||AEC-Q101|X5T853|7|12|1,000|
|Notes:|1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.|1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.||||||



2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

**==> picture [55 x 72] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT223<br>X5T<br>853<br>YWW<br>**----- End of picture text -----**<br>


X5T 853 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 5= 2015) WW or WW = Week Code (01~53) 

1 of 7 **www.diodes.com** 

ZX5T853G Datasheet Number: DS33422 Rev. 3 - 2 

May 2015 © Diodes Incorporated 

**ZX5T853G** 

## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|200|V|
|Collector-Emitter Voltage|VCEO|100|V|
|Emitter-Base Voltage|VEBO|7|V|
|Continuous Collector Current|IC|6|A|
|Peak Pulse Current|ICM|10|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation<br>Linear Derating Factor|(Note 5)|PD|3.0<br>24|W<br>mW/°C|
||(Note 6)||1.6<br>12.8||
|Thermal Resistance, Junction to Ambient|(Note 5)|RJA|42|°C/W|
||(Note 6)|RJA|78||
|Thermal Resistance Junction to Lead|(Note 7)|RJL|10.5||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **ESD Ratings** (Note 8) 

|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|**ESD Ratingsgss **(Note 8)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge - Human Body Model|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|400|V|C|



Notes: 5. For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

6. Same as Note 5, except the device is surface mounted on 25mm x 25mm with 1oz copper. 

7. Thermal resistance from junction to solder-point (at the end of the collector lead). 

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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ZX5T853G Datasheet Number: DS33422 Rev. 3 - 2 

May 2015 © Diodes Incorporated 

**ZX5T853G** 

## rir 

## **Thermal Characteristics and Derating Information** 

**==> picture [431 x 339] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 V CE(sat) 3.0<br>Limit a<br>2.5<br>1 IN DC  ONES AS 2.0 P| LN See note (5) | | |<br>1s 1.5<br>100ms<br>100m 10ms 1.0<br>See note (6)<br>1ms<br>Single Pulse. T amb =25°C 0.5<br>10m See note (5) UT 100µs PTT | 0.0 mS<br>100m HH 1 10 100 0 COCO 20 40 60 80 100 120 SS 140 160<br>VCE  Collector-Emitter Voltage (V)  Temperature (°C)<br>Safe Operating Area Derating Curve<br>40 See note (5) Single Pulse. Tamb=25°C<br>ro 100 Na See note (5)<br>EA ae SE Se = i<br>30<br>D=0.5<br>20<br>[A] 10 CMEC<br>Se [tt] ee Wee ae PEAT TIT TOSNATE C TTO ECTT TTT TTT<br>10 D=0.2 eT TUCAAIIN | II] Single Pulse | ETOoe<br>+ Te IN D=0.05 CoCece<br>ee NAIM FA om 00<br>D=0.1<br>0 Seiaetial ft LAO 1 BELNAEAAENA<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>  Collector Current (A)<br>IC<br> Max Power Dissipation (W)<br>Thermal Resistance (°C/W)  Max Power Dissipation (W)<br>**----- End of picture text -----**<br>


3 of 7 **www.diodes.com** 

ZX5T853G Datasheet Number: DS33422 Rev. 3 - 2 

May 2015 

© Diodes Incorporated 

**ZX5T853G** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~—~~<br>~~—~~|**Symbol**<br>~~—~~|**Min**<br>~~—~~|**Typ**<br>~~—~~|**Max**<br>~~—~~|**Unit**<br>~~—~~|**Test Condition**<br>~~—~~|
|Collector-Base Breakdown Voltage<br>~~—~~<br>~~—~~|BVCBO<br>~~—~~|200<br>~~—~~|235<br>~~—~~|-<br>~~—~~|V<br>~~—~~|IC= 100µA<br>~~—~~|
|Collector-Emitter Breakdown Voltage<br>~~—~~|BVCER|200|235|-|V|IC= 1µA,RB ≤ 1kΩ|
|Collector-Emitter Breakdown Voltage(Note 9)<br>~~—~~|BVCEO|100<br>~~GO~~|115|-|V<br>~~(O~~|IC= 10mA<br>~~(O~~|
|Emitter-Base Breakdown Voltage<br>~~—~~<br>~~GO~~|BVEBO<br>~~GO~~|7<br>~~GO~~<br>~~GO~~|8.1<br>~~GO~~|-<br>~~GO~~|V<br>~~GO~~<br>~~(O~~|IE= 100µA<br>~~GO~~<br>~~(O~~|
|Collector-Base Cut-Off Current<br>~~a~~|ICBO<br>~~a~~|-<br>~~GO~~<br>~~a~~|<1<br>-<br>~~a~~|20<br>0.5<br>~~a~~|nA<br>µA<br>~~(O~~<br>~~a~~|VCB= 150V<br>VCB= 150V,TA= +100°C<br>~~(O~~<br>~~a~~|
|Collector-Emitter Cut-Off Current<br>~~a~~|ICER<br>R ≤ 1kΩ <br>~~a~~|-<br>~~a~~|-<br>-<br>~~a~~|20<br>0.5<br>~~a~~|nA<br>µA<br>~~a~~|VCB= 150V<br>VCB= 150V,TA= +100°C<br>~~a~~|
|Emitter Cut-Off Current|IEBO|-|-|10|nA|VEB= 6V<br>~~ES~~|
|Static Forward Current Transfer Ratio (Note 9)<br>~~EEE~~|hFE<br>~~EEE~~|100<br>~~EEE~~|230<br>~~ee~~<br>~~EEE~~|-<br>~~ee~~<br>~~EEE~~|-<br>~~a~~<br>~~ee~~<br>~~EEE~~<br>~~eS~~|IC= 10mA,VCE= 2V<br>~~Po~~<br>~~EEE~~<br>~~ES~~|
|||100<br>~~a~~<br>~~EEE~~<br>~~==~~|200<br>~~a~~<br>~~ee~~<br>~~EEE~~<br>~~==~~|300<br>~~a~~<br>~~ee~~<br>~~EEE~~<br>||IC= 2A,VCE= 2V<br>~~a~~<br>~~Po~~<br>~~EEE~~<br>~~ES~~<br>~~eS—~~|
|||30<br>~~EEE~~<br>~~==~~|60<br>~~ee~~<br>~~EEE~~<br>~~==~~|-<br>~~ee~~<br>~~EEE~~<br>||IC= 5A,VCE= 2V<br>~~Po~~<br>~~EEE~~<br>~~ES~~<br>~~eS—~~|
|||10<br>~~EEE~~<br>~~==~~|20<br>~~EEE~~<br>~~==~~|-<br>~~EEE~~<br>||IC= 10A,VCE= 2V<br>~~EEE~~<br>~~ES~~<br>~~eS—~~|
|Collector-Emitter Saturation Voltage (Note 9)<br>~~ee~~<br>~~SS~~|VCE(sat)<br>~~ee~~<br>~~SS~~|-<br>~~ee~~<br>~~==~~|21<br>~~ee~~<br>~~==~~|35<br>~~ee~~<br>|mV<br>~~ee~~<br>~~eS~~<br>~~ee~~<br>~~SS~~|IC= 100mA,IB= 5mA<br>~~ES~~<br>~~ee~~<br>~~eS—~~|
|||-<br>~~ee~~<br>~~==~~<br>~~ee~~|50<br>~~ee~~<br>~~==~~<br>~~ee~~|65<br>~~ee~~<br><br>~~ee~~||IC= 1A,IB= 100mA<br>~~ee~~<br>~~eS—~~<br>~~Po~~|
|||-<br>~~ee~~<br>~~==~~<br>~~ee~~|95<br>~~ee~~<br>~~==~~<br>~~ee~~|125<br>~~ee~~<br><br>~~ee~~||IC= 2A,IB= 100mA<br>~~ee~~<br>~~eS—~~<br>~~Po~~|
|||-<br>~~ee~~<br>~~==~~<br>~~ee~~<br>~~SS~~|180<br>~~ee~~<br>~~==~~<br>~~ee~~<br>~~SS~~|220<br>~~ee~~<br><br>~~ee~~<br>~~SS~~||IC= 5A,IB= 500mA<br>~~ee~~<br>~~eS—~~<br>~~Po~~<br>~~SS~~|
|Base-Emitter Saturation Voltage(Note 9)<br>~~SS~~|VBE(sat)<br>~~SS~~|-<br>~~==~~<br>~~SS~~|1,020<br>~~==~~<br>~~SS~~|1,120<br><br>~~SS~~|mV<br>~~eS~~<br>~~SS~~|IC= 5A,IB= 500mA<br>~~eS—~~<br>~~SS~~|
|Base-Emitter Turn-On Voltage(Note 9)<br>~~SS~~|VBE(on)<br>~~SS~~|-<br>~~==~~<br>~~SS~~|920<br>~~==~~<br>~~SS~~|1,000<br><br>~~SS~~|mV<br>~~eS~~<br>~~SS~~|IC= 5A,VCE= 2V<br>~~eS—~~<br>~~SS~~|
|Output Capacitance(Note 9)|Cobo|-<br>~~==~~|26<br>~~== ~~|-<br>|pF<br> ~~eS~~|VCB= 10V. f = 1MHz<br>~~eS—~~|
|Transition Frequency<br>~~ee~~|fT<br>~~ee~~<br>~~SS~~|-<br>~~ee~~<br>~~SS~~|130<br>~~ee~~<br>~~SS~~|-<br>~~ee~~<br>~~SS~~|MHz<br>~~ee~~|VCE= 10V, IC= 100mA<br>f = 50MHz<br>~~ee~~|
|Switching Time<br>~~OE~~|ton<br>~~OE~~<br>~~SS~~|-<br>~~OE~~<br>~~SS~~|41<br>~~OE~~<br>~~SS~~|-<br>~~OE~~<br>~~SS~~|ns<br>~~OE~~|VCC= 10V, IC= 1A<br>IB1= -IB2= 100mA<br>~~OE~~|
||toff<br>~~OE~~<br>~~SS~~|-<br>~~OE~~<br>~~SS~~|1,010<br>~~OE~~<br>~~SS~~|-<br>~~OE~~<br>~~SS~~|||



4 of 7 **www.diodes.com** 

ZX5T853G Datasheet Number: DS33422 Rev. 3 - 2 

May 2015 © Diodes Incorporated 

'ae,nu c °o R P 

**ZX5T853G** | 

## rly 

## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

**==> picture [370 x 463] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 0.6<br>CoCee Tamb=25° a C EEE HEa 0.5 | I C /I B =10 a 1<br>ine I C /I B =50 Cr AAI 0.4 a<br>100°C<br>100m (A777Et IC/IB=20 N / fh | 0.3 eea ee | nT|<br>25°C<br>SEG See Soi 0.2 HEH... <A<br>rn LNT s  eae ella SEaeeTT TT SMA<br>a alll I C /I B =10 0.1 a<br>10m et|TT HH 0.0 aSe eeeT | eee | -55°C<br>1m 10m 100m 1 10 1m 10m 100m 1 10<br>IC   Collector Current (A) IC   Collector Current (A)<br>V  v I V  v I<br>CE(SAT) C CE(SAT) C<br>250<br>1.2 aPIN eeET 100°C nl V CE =2V | 200 1.4 I C /I B =10 aa a a<br>1.0 =v al | 1.2 EY<br>pe HL CO Co Con a<br>COMI eer HT yA<br>0.8 25°C 150 1.0<br>Peer TH A<br>0.6 peaemenmen| IY cs 100 0.8 SE -55°C Sen— a —ael rl ra<br>0.4 TPRtT -55°C TTT 25°C ST eT<br>EE NT 0.6 Fe<br>0.2 ll TTT 50 b= 100°C ire ToT I<br>ConnTP CONCLT 0.4 ouee art| TTI TE ETT<br>0.0 CI Cc 0 a<br>1m 10m 100m 1 10 1m 10m 100m 1 10<br>IC   Collector Current (A) IC   Collector Current (A)<br>h  v I V  v I<br>FE C BE(SAT) C<br>1.4 V CE =2V aaa<br>1.2 aa<br>|)<br>1.0 a<br>0.8 ee -55°C eee lie<br>eS<br>25°C<br>0.6 soem|_ at Ne SacreSreeedcll<br>100°C<br>0.4 eeec enn<br>a<br>1m 10m 100m 1 10<br>IC   Collector Current (A)<br>V  v I<br>BE(ON) C<br>  (V)   (V)<br>CE(SAT) CE(SAT)<br>V V<br>)<br>FE<br>  (V)<br>BE(SAT)<br>V<br>Normalised Gain<br> Typical Gain (h<br> (V)<br>BE(ON)<br>V<br>**----- End of picture text -----**<br>


5 of 7 **www.diodes.com** 

ZX5T853G Datasheet Number: DS33422 Rev. 3 - 2 

May 2015 © Diodes Incorporated 

**ZX5T853G** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

**==> picture [417 x 218] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>b1 Q<br>Ee C<br>SOT223<br>Dim  Min  Max  Typ<br>A 1.55 1.65 1.60<br>A1 0.010 0.15 0.05<br>b 0.60 0.80 0.70<br>E E1 b1 2.90  3.10  3.00<br>C 0.20  0.30  0.25<br>Gauge<br>Plane D 6.45  6.55  6.50<br>0.25 E 3.45  3.55  3.50<br>Seating L E1 6.90  7.10  7.00<br>Plane<br>e -  -  4.60<br>wt e1 b B e1 -  -  2.30<br>L 0.85 1.05 0.95<br>e<br>EON Be Q 0.84  0.94  0.89<br>All Dimensions in mm<br>A A1 7°<br>0°-10°<br>7°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

**==> picture [154 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
X1<br>Y1<br>C1 Y2<br>Y<br>poo X C<br>**----- End of picture text -----**<br>


**==> picture [110 x 147] intentionally omitted <==**

**----- Start of picture text -----**<br>
Dimensions Value (in mm)<br>C 2.30<br>C1  6.40<br>X  1.20<br>X1  3.30<br>Y  1.60<br>Y1  1.60<br>Y2  8.00<br>=<br>**----- End of picture text -----**<br>


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ZX5T853G Datasheet Number: DS33422 Rev. 3 - 2 

May 2015 © Diodes Incorporated 

**ZX5T853G** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

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ZX5T853G Datasheet Number: DS33422 Rev. 3 - 2 

May 2015 © Diodes Incorporated 



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