# Power MOSFET, P Channel, 240 V, 200 mA, 9 ohm, TO-226AA, Through Hole ![Product image](https://novapart.co/image/farnell:9526129/) **URL**: https://novapart.co/products/ZVP4424A/power-mosfet-p-channel-240-v-200-ma-9-ohm-to-226aa **SKU**: ZVP4424A **Manufacturer**: DIODES INC. **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.4250 **Stock**: 1000+ **Lead Time**: 78 days (indicative) ## Description Transistor Polarity:P Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:-240V; On Resistance Rds(on):15ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.4V; Power D ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | P Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 750mW | | Transistor Mounting | Through Hole | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-226AA | | Drain Source Voltage Vds | 240V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 200mA | | Drain Source On State Resistance | 9ohm | | Gate Source Threshold Voltage Max | 1.4V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:9526129/) **==> picture [417 x 7] intentionally omitted <==** **----- Start of picture text -----**
Ω Ω
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## **��������** ## **TYPICAL CHARACTERISTICS** **==> picture [361 x 482] intentionally omitted <==** **----- Start of picture text -----**
-1.2 -1.2
300µs Pulsed Test
VGS=-10V
-1.0 -1.0
-5V
-0.8 -0.8
-4V
-0.6 -0.6
VDS=-10V
-0.4 -0.4 300µs Pulsed Test
-3V
-0.2 -2.5V -0.2
-2V
0 0
0 -2 -4 -6 -8 -10 0 -2 -4 -6 -8 -10
VDS - Drain Source Voltage (Volts) VGS - Gate Source Voltage (Volts)
Saturation Characteristics Transfer Characteristics
400 400
300 300
200 200
300µs Pulsed Test 300µs Pulsed Test
VDS=-10V VDS=-10V
100 100
0 0
0 -0.2 -0.4 -0.6 -0.8 -1.0 0 -2 -4 -6
ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts)
Transconductance v drain current Transconductance v gate-source voltage
100 2.4
VGS=-2V -2.5V 2.2 VIDGS==0.2A-10V
2.0
-3V 1.8
1.6
-10V 1.4
10 1.2
1.0
0.8
0.6
300µs Pulsed Test 0.4 VID=GS=-1mAVDS
0.2
1 0.0
-0.01 -0.1 -1 -10 -50 -25 0 25 50 75 100 125 150
ID-Drain Current (Amps) Junction Temperature (°C)
On-resistance vs Drain Current Normalised RDS(on) and VGS(th) vs Temperature
Gate Threshold
Voltage V
GS(TH)
DS(on)
Drain-Source Resistance R
-Transconductance (mS) -Transconductance (mS)
fs fs
g g
)(Ω
RDS(on)-Drain Source On Resistance
- Drain Current (Amps) - Drain Current (Amps)
ID ID
GS(th)
and V
DS(on)
Normalised R
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## **��������** ## **TYPICAL CHARACTERISTICS** **==> picture [363 x 322] intentionally omitted <==** **----- Start of picture text -----**
300 0
Note:VGS=0V
-2
250
-4
200
-6
150 Ciss -8
-10 VDS= -20V
100 -50V
Coss -12 -100V
50
-14
0 Crss -16 Note:ID=- 0.25A
-0.01 -1 -10 -100 0 1 2 3 4 5
VDS-Drain Source Voltage (Volts) Q-Gate Charge (nC)
Capacitance v drain-source voltage Gate charge v gate-source voltage
0.8
D=1 (D.C.)
150
0.6
100
D=0.5
0.4
50
D=0.2 0.2
D=0.1
D=0.05
00.0001 0.001Single Pulse0.01 0.1 1 10 100 0 0 50 100 150
Pulse Width (seconds) Tamb - Ambient Temperature (°C)
Maximum transient thermal impedance Derating Curve
-Gate Source Voltage (Volts)
GS
V
-Power Dissipation (mW)
tot
P
Thermal Resistance (°C/W)
C-Capacitance (pF)
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## **��������** ## **TYPICAL CHARACTERISTICS** **==> picture [361 x 482] intentionally omitted <==** **----- Start of picture text -----**
-1.2 -1.2
300µs Pulsed Test
VGS=-10V
-1.0 -1.0
-5V
-0.8 -0.8
-4V
-0.6 -0.6
VDS=-10V
-0.4 -0.4 300µs Pulsed Test
-3V
-0.2 -2.5V -0.2
-2V
0 0
0 -2 -4 -6 -8 -10 0 -2 -4 -6 -8 -10
VDS - Drain Source Voltage (Volts) VGS - Gate Source Voltage (Volts)
Saturation Characteristics Transfer Characteristics
400 400
300 300
200 200
300µs Pulsed Test 300µs Pulsed Test
VDS=-10V VDS=-10V
100 100
0 0
0 -0.2 -0.4 -0.6 -0.8 -1.0 0 -2 -4 -6
ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts)
Transconductance v drain current Transconductance v gate-source voltage
100 2.4
VGS=-2V -2.5V 2.2 VIDGS==0.2A-10V
2.0
-3V 1.8
1.6
-10V 1.4
10 1.2
1.0
0.8
0.6
300µs Pulsed Test 0.4 VID=GS=-1mAVDS
0.2
1 0.0
-0.01 -0.1 -1 -10 -50 -25 0 25 50 75 100 125 150
ID-Drain Current (Amps) Junction Temperature (°C)
On-resistance vs Drain Current Normalised RDS(on) and VGS(th) vs Temperature
Gate Threshold
Voltage V
GS(TH)
DS(on)
Drain-Source Resistance R
-Transconductance (mS) -Transconductance (mS)
fs fs
g g
)(Ω
RDS(on)-Drain Source On Resistance
- Drain Current (Amps) - Drain Current (Amps)
ID ID
GS(th)
and V
DS(on)
Normalised R
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## **��������** ## **TYPICAL CHARACTERISTICS** **==> picture [363 x 322] intentionally omitted <==** **----- Start of picture text -----**
300 0
Note:VGS=0V
-2
250
-4
200
-6
150 Ciss -8
-10 VDS= -20V
100 -50V
Coss -12 -100V
50
-14
0 Crss -16 Note:ID=- 0.25A
-0.01 -1 -10 -100 0 1 2 3 4 5
VDS-Drain Source Voltage (Volts) Q-Gate Charge (nC)
Capacitance v drain-source voltage Gate charge v gate-source voltage
0.8
D=1 (D.C.)
150
0.6
100
D=0.5
0.4
50
D=0.2 0.2
D=0.1
D=0.05
00.0001 0.001Single Pulse0.01 0.1 1 10 100 0 0 50 100 150
Pulse Width (seconds) Tamb - Ambient Temperature (°C)
Maximum transient thermal impedance Derating Curve
-Gate Source Voltage (Volts)
GS
V
-Power Dissipation (mW)
tot
P
Thermal Resistance (°C/W)
C-Capacitance (pF)
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