# Power MOSFET, P Channel, 100 V, 75 mA, 20 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:3577042/)

**URL**: https://novapart.co/products/ZVP3310FTA/power-mosfet-p-channel-100-v-75-ma-20-ohm-sot-23
**SKU**: ZVP3310FTA
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2620
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 330mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 75mA |
| Drain Source On State Resistance | 20ohm |
| Gate Source Threshold Voltage Max | 3.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3577042/)

**ZVP3310F SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET** 

## **Product Summary** 

## **Features and Benefits** 

- Low On-Resistance 

|**BVDSS**|**RDS(ON) max**|**ID max**|
|---|---|---|
|-100V|20Ω @ VGS= -10V|-75mA|



- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- **An Automotive-Compliant Part is Available Under Separate Datasheet (ZVP3310FQ)** 

## **Mechanical Data** 

   - Case: SOT23 

- Load Switching 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Terminals Connections: See Diagram Below 

SOT23 

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Top View<br>**----- End of picture text -----**<br>


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 Weight: 0.008 grams (Approximate)<br>D<br>D<br>G<br>G S<br>© Co<br>S<br>Internal Schematic  Top View<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|ZVP3310FTA|SOT23|3000/Tape &Reel|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

MR = Product Type Marking Code 

1 of 5 **www.diodes.com** 

ZVP3310F Document number: DS33406  Rev. 5 - 2 

August 2019 © Diodes Incorporated 

**ZVP3310F** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|-100|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current|SteadyState|ID|-75|mA|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)||IDM|-1.2|A|
|Pulsed Source Current(10µs Pulse,DutyCycle = 1%)||ISM|-1.2|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation(@TA= +25°C)|PD|330|mW|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

||||||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 6) **<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|-100<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= -1mA<br>~~ee~~|
|Zero Gate Voltage Drain Current<br>~~ee~~<br>~~|~~|IDSS<br>~~ee~~<br>~~|~~|—<br>~~ee~~<br>~~|~~|—<br>~~ee~~<br>~~|~~|-1<br>~~ee~~<br>~~|~~|μA<br>~~ee~~<br>~~|~~|VDS= -100V, VGS= 0V<br>~~ee~~<br>~~|~~|
|||—<br>~~|~~|—<br>~~|~~|-50<br>~~|~~|μA<br>~~|~~|VDS= -80V, VGS= 0V, T =<br>+125°C<br>~~|~~|
|Gate-Source Leakage<br>~~|~~|IGSS<br>~~|~~|—<br>~~|~~|—<br>~~|~~|±20<br>~~|~~|nA<br>~~|~~|VGS= ±20V, VDS= 0V<br>~~|~~|
|**ON CHARACTERISTICS(Note 6) **<br>~~EEE~~|||||||
|Gate Threshold Voltage<br>~~EEE~~|VGS(TH)<br>~~EEE~~|-1.5<br>~~EEE~~|—<br>~~EEE~~|-3.5<br>~~EEE~~|V<br>~~EEE~~|VDS= VGS, ID= -1mA<br>~~EEE~~|
|Static Drain-Source On-Resistance (Note 5)<br>~~oo~~|RDS(ON)<br>~~oo~~|—<br>~~oo~~|—<br>~~oo~~|20<br>~~oo~~|Ω<br>~~oo~~|VGS= -10V, ID= -150mA<br>~~oo~~|
|On-State Drain Current (Note 5)<br>~~oo~~|ID(ON)<br>~~oo~~|-300<br>~~oo~~|—<br>~~oo~~|—<br>~~oo~~|mA<br>~~oo~~|VDS= -25V, VGS= -10V<br>~~oo~~|
|Forward Transconductance (Note 5)<br>~~oo~~|gfs<br>~~oo~~|50<br>~~oo~~|—<br>~~oo~~|—<br>~~oo~~|mS<br>~~oo~~|VDS= -25V, ID= -150mA<br>~~oo~~|
|**DYNAMIC CHARACTERISTICS(Note 7)**<br>~~|~~|||||||
|Input Capacitance<br>~~Ce~~|Ciss|—|—|50|pF<br>~~ee~~|VDS= -25V, VGS= 0V, f = 1MHz<br>~~ee~~|
|Output Capacitance|Coss|—|—|15|||
|Reverse Transfer Capacitance<br>~~—<_———~~|Crss|—|—|5<br>~~ee~~|||
|Turn-On Delay Time<br>~~—<_———~~|tD(ON)|—|—|8<br>~~ee~~|ns<br>~~ee~~|VDD= -25V, ID= -150mA<br>~~ee~~|
|Turn-On Rise Time<br>~~—<_———~~|tR|—|—|8<br>~~ee~~|||
|Turn-Off Delay Time<br>~~—<_———~~|tD(OFF)|—|—|8<br>~~ee~~|||
|Turn-Off Fall Time<br>~~—<_———~~|tF|—|—|8<br>~~ee~~|||



Notes: 5. Measured under pulsed conditions. Width = 300ms. Duty cycle <=2%. 

6. Short duration pulse test used to minimize self-heating effect. 

7. Guaranteed by design. Not subject to product testing. 

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ZVP3310F Document number: DS33406  Rev. 5 - 2 

August 2019 © Diodes Incorporated 

**ZVP3310F** 

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0<br>**----- End of picture text -----**<br>


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VGS=<br>**----- End of picture text -----**<br>


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EEE<br>ee ee<br>ID=<br>pt tt tt yy | PN<br>a<br>4 TENE<br>p{ tf | Ss<br>. Pt; PT tT te tT TT | Td<br>- Drain Source Voltage (Volts)<br>DS<br>V<br>**----- End of picture text -----**<br>


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—~ oee “(TT<br>VDS=-10V  VGS=0V<br>pe es TT TT 7 f=1MHz  7 7<br>= -EEEEETE<br>PEERS [=a<br>oS 3 EERE<br>soit} | | |\| | =Ss 4 etNS =—__| | fTt<br>Ciss<br>8 x Pe eee a "“{\7 | [| | Py<br>Sg<br>Coss<br>Ee 10 yot | tT NN vo 0 ee Crss<br>2 of | [| | [| TT ® | 9 _ oR E e<br>O 01 -02 03 -04 05 08 O07 08 0 20 0 60<br>It- Drain Current (Amps) VoOS-Drain Source Voltage (Valts)<br>Transconductance v Drain Current  Capacitance v Drain-Source Voltage<br>VGS=-10V GS=-10V =-10V<br>ID=-150mA D=-150mA =-150mA<br>3 4 TT LWA /- og<br>@ Z| | iLL)| Tt Tt<br>s EEL | Tt Tt ot TO<br>s VA A EL TT TT<br>VDS=<br>{C CE SCOOT RETO<br>gO -25V  -50V  -100V  of LT ee er TT TT VGS=VDSGS=VDS=VDSDS<br>2 “4 fe ID=-1mA D=-1mA =-1mA<br>= ID=-0.2A  RI oe<br>§ tf || 2<br>> @eccerrrer“9 o> of of O08 40 42 80606 -60  "40-20TL0TL00 2et40|et40|40|| & & 100 120 e 140 160<br>O-Charge (nC) TJ - Junction Temperature (°C) J - Junction Temperature (°C) - Junction Temperature (°C)<br>Gate Charge v Gate-Source Voltage  Normalised RDS(ON) and VGS(TH)DS(ON) and VGS(TH)and VGS(TH)GS(TH) v Temperature<br>GS(TH)<br> and V<br>DS(ON)<br>Normalised R<br>**----- End of picture text -----**<br>


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VGS=-10V GS=-10V =-10V<br>ID=-150mA D=-150mA =-150mA<br>og<br>iLL)| Tt Tt ot TO<br>EL TT TT<br>SCOOT RETO<br>of LT ee er TT TT VGS=VDSGS=VDS=VDSDS<br>fe ID=-1mA D=-1mA =-1mA<br>RI oe<br>2<br>80606 -60  "40-20TL0TL00 2et40|et40|40|| & & 100 120 e 140 160 180<br>GS(TH)<br> and V<br>DS(ON)<br>Normalised R<br>**----- End of picture text -----**<br>


**TJ - Junction Temperature (°C) J - Junction Temperature (°C) - Junction Temperature (°C) Normalised RDS(ON) and VGS(TH)DS(ON) and VGS(TH)and VGS(TH)GS(TH) v Temperature** 

3 of 5 **www.diodes.com** 

ZVP3310F Document number: DS33406  Rev. 5 - 2 

August 2019 © Diodes Incorporated 

**ZVP3310F** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT23** 

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**----- Start of picture text -----**<br>
All 7°<br>H SOT23<br>GAUGE PLANE Dim  Min  Max  Typ<br>0.25 A  0.37  0.51  0.40<br>J<br>K1 K B  1.20  1.40  1.30<br>C  2.30 2.50 2.40<br>a D  0.89 1.03 0.915<br>A M F  0.45 0.60 0.535<br>G  1.78 2.05 1.83<br>esleun L y L1 ————==== H  2.80  3.00  2.90<br>J  0.013  0.10  0.05<br>K  0.890  1.00  0.975<br>7 K1  0.903  1.10  1.025<br>C B<br>L  0.45  0.61  0.55<br>L1  0.25  0.55  0.40<br>;>L ——e<br>M  0.085 0.150 0.110<br>| a  0°  8°  --<br>TU D ——— All Dimensions in mm<br>F G<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT23** 

Y Y1 ~~sna~~ C ~~4 Ee PT~~ X ~~LT~~ X1 

|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|2.0|
|**X**|0.8|
|**X1**|1.35|
|**Y**|0.9|
|**Y1**|2.9|



4 of 5 **www.diodes.com** 

ZVP3310F Document number: DS33406  Rev. 5 - 2 

August 2019 © Diodes Incorporated 

**ZVP3310F** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

5 of 5 **www.diodes.com** 

ZVP3310F Document number: DS33406  Rev. 5 - 2 

August 2019 © Diodes Incorporated 



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- [Supplier page](https://es.farnell.com/diodes-inc/zvp3310fta/mosfet-p-ch-100v-0-075a-sot-23/dp/3577042)
---

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