# Power MOSFET, P Channel, 100 V, 230 mA, 8 ohm, TO-226AA, Through Hole ![Product image](https://novapart.co/image/farnell:9525955/) **URL**: https://novapart.co/products/ZVP2110A/power-mosfet-p-channel-100-v-230-ma-8-ohm-to-226aa **SKU**: ZVP2110A **Manufacturer**: DIODES INC. **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.3110 **Stock**: 1000+ **Lead Time**: 78 days (indicative) ## Description Transistor Polarity:P Channel; Continuous Drain Current Id:230mA; Drain Source Voltage Vds:-100V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3.5V; Power Dissipati ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | P Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 700mW | | Transistor Mounting | Through Hole | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-226AA | | Drain Source Voltage Vds | 100V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 230mA | | Drain Source On State Resistance | 8ohm | | Gate Source Threshold Voltage Max | 3.5V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:9525955/) **==> picture [361 x 141] intentionally omitted <==** **----- Start of picture text -----**
P-CHANNEL ENHANCEMENT
ZVP2110C
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94– MARCH 94 MARCH 94
FEATURES
* 100 Volt VDSDS
* R =8ΩΩ
DS(on)
G D
S
REFER TO ZVP2110A FOR GRAPHS
E-Line
TO92 Compatible
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## **P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET** ## **ISSUE 2 – MARCH 94– MARCH 94 MARCH 94** ## FEATURES - 100 Volt VDSDS - R =8ΩΩ DS(on) ## **P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94** ## FEATURES - 100 Volt VDS - R =8Ω DS(on) **==> picture [153 x 9] intentionally omitted <==** **----- Start of picture text -----**
ABSOLUTE MAXIMUM RATINGS.
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## **ZVP2110A** **==> picture [103 x 92] intentionally omitted <==** **----- Start of picture text -----**
D G
S
E-Line
TO92 Compatible
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## **ZVP2110A** ## **TYPICAL CHARACTERISTICS** **==> picture [362 x 483] intentionally omitted <==** **----- Start of picture text -----**
-1.6 VGS= VGS=
-20V -1.6 -20V
-1.4 -16V -16V
-12V -1.4
-12V
-1.2 -10V-9V -1.2 -10V
-1.0 -8V -1.0 -9V-8V
-0.8 -0.8
-7V
-7V
-0.6
-6V -0.6 -6V
-0.4 -5V -0.4
-0.2 -4.5V-4V-4V -0.2 -4.5V-5V
0 -3.5V 0 -4V-3.5V
0 -10 -20 -30 -40 -50 0 -2 -4 -6 -8 -10
VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts)
Output Characteristics Saturation Characteristics
-8 -1.6
-1.4
-6 -1.2
VDS=-10V
-1.0
-4 -0.8
ID= -0.6
-2 -0.5A -0.4
-0.25A
-0.2
-0.1A
0 0
0 -2 -4 -6 -8 -10 0 -2 -4 -6 -8 -10
VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts)
Transfer Characteristics
Voltage Saturation Characteristics
100 2.6
2.4
VGS=-4V 2.2 VGS=-10V
2.0 ID=-0.375A
-5V -7V 1.8
10 -10V 1.6
1.4
-20V 1.2 VGS=VDS
1.0 ID=-1mA
0.8
1 0.6
10 100 1000 -40 -20 0 20 40 60 80 100 120 140 160 180°C
ID-Drain Current (mA)
On-resistance v drain current Normalised RDS(on) and VGS(th) vs Temperature
Gate Threshold Voltage VGS(th)
DS(on)
Drain-Source Resistance R
Voltage (Volts)
Drain Source
DS-
V
)(Ω
-Drain Source On Resistance
DS(on)
R
- Drain Current (Amps)
- Drain Current (Amps)
D(On)
I D(On)
I
Drain Current (Amps)
ID(On)
GS(th)
and V
DS(on)
Normalised R
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## **ZVP2110A** ## **TYPICAL CHARACTERISTICS** **==> picture [361 x 322] intentionally omitted <==** **----- Start of picture text -----**
250 250
VDS=-10V
200 200
150 150 VDS=-10V
100 100
50 50
0 0
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 0 -2 -4 -6 -8 -10
ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts)
Transconductance v drain current Transconductance v gate-source voltage
0
80 -2 ID=- 0.5A
VDS=
-4 -25V -50V -100V
60
Ciss -6
-8
40
-10
20 -12
Coss -14
Crss
0 -16
0 -20 -40 -60 -80 -100 0 0.5 1.0 1.5 2.0 2.5 3.0
VDS-Drain Source Voltage (Volts) Q-Gate Charge (nC)
Capacitance v drain-source voltage Gate charge v gate-source voltage
-Transconductance (mS) -Transconductance (mS)
fs fs
g g
C-Capacitance (pF)
-Gate Source Voltage (Volts)
GS
V
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## **ZVP2110A** ## **TYPICAL CHARACTERISTICS** **==> picture [362 x 483] intentionally omitted <==** **----- Start of picture text -----**
-1.6 VGS= VGS=
-20V -1.6 -20V
-1.4 -16V -16V
-12V -1.4
-12V
-1.2 -10V-9V -1.2 -10V
-1.0 -8V -1.0 -9V-8V
-0.8 -0.8
-7V
-7V
-0.6
-6V -0.6 -6V
-0.4 -5V -0.4
-0.2 -4.5V-4V-4V -0.2 -4.5V-5V
0 -3.5V 0 -4V-3.5V
0 -10 -20 -30 -40 -50 0 -2 -4 -6 -8 -10
VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts)
Output Characteristics Saturation Characteristics
-8 -1.6
-1.4
-6 -1.2
VDS=-10V
-1.0
-4 -0.8
ID= -0.6
-2 -0.5A -0.4
-0.25A
-0.2
-0.1A
0 0
0 -2 -4 -6 -8 -10 0 -2 -4 -6 -8 -10
VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts)
Transfer Characteristics
Voltage Saturation Characteristics
100 2.6
2.4
VGS=-4V 2.2 VGS=-10V
2.0 ID=-0.375A
-5V -7V 1.8
10 -10V 1.6
1.4
-20V 1.2 VGS=VDS
1.0 ID=-1mA
0.8
1 0.6
10 100 1000 -40 -20 0 20 40 60 80 100 120 140 160 180°C
ID-Drain Current (mA)
On-resistance v drain current Normalised RDS(on) and VGS(th) vs Temperature
Gate Threshold Voltage VGS(th)
DS(on)
Drain-Source Resistance R
Voltage (Volts)
Drain Source
DS-
V
)(Ω
-Drain Source On Resistance
DS(on)
R
- Drain Current (Amps)
- Drain Current (Amps)
D(On)
I D(On)
I
Drain Current (Amps)
ID(On)
GS(th)
and V
DS(on)
Normalised R
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## **ZVP2110A** ## **TYPICAL CHARACTERISTICS** **==> picture [361 x 322] intentionally omitted <==** **----- Start of picture text -----**
250 250
VDS=-10V
200 200
150 150 VDS=-10V
100 100
50 50
0 0
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 0 -2 -4 -6 -8 -10
ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts)
Transconductance v drain current Transconductance v gate-source voltage
0
80 -2 ID=- 0.5A
VDS=
-4 -25V -50V -100V
60
Ciss -6
-8
40
-10
20 -12
Coss -14
Crss
0 -16
0 -20 -40 -60 -80 -100 0 0.5 1.0 1.5 2.0 2.5 3.0
VDS-Drain Source Voltage (Volts) Q-Gate Charge (nC)
Capacitance v drain-source voltage Gate charge v gate-source voltage
-Transconductance (mS) -Transconductance (mS)
fs fs
g g
C-Capacitance (pF)
-Gate Source Voltage (Volts)
GS
V
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