# Power MOSFET, N Channel, 200 V, 180 mA, 10 ohm, E-Line, Through Hole ![Product image](https://novapart.co/image/farnell:9525483/) **URL**: https://novapart.co/products/ZVNL120A/power-mosfet-n-channel-200-v-180-ma-10-ohm-e-line **SKU**: ZVNL120A **Manufacturer**: DIODES INC. **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: ā‚¬0.2310 **Stock**: 10+ **Lead Time**: 78 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:180mA; Drain Source Voltage Vds:200V; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:1.5V; Power Dissi ## Specifications | Parameter | Value | |---|---| | Msl | - | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 700mW | | Transistor Mounting | Through Hole | | Rds(On) Test Voltage | 5V | | Transistor Case Style | E-Line | | Drain Source Voltage Vds | 200V | | Operating Temperature Max | 150Ā°C | | Continuous Drain Current Id | 180mA | | Drain Source On State Resistance | 10ohm | | Gate Source Threshold Voltage Max | 1.5V | ## Datasheet šŸ“„ [Download PDF](https://novapart.co/datasheet/farnell:9525483/) ## **ZVNL120A** ## **TYPICAL CHARACTERISTICS** **==> picture [362 x 481] intentionally omitted <==** **----- Start of picture text -----**
VGS= VGS=
1.6 10V 1.0 10V
8V 8V
1.4 6V 6V
0.8
1.2
5V 4V
1.0 0.6
0.8
4V
0.6 0.4
3V
0.4
3V 0.2
0.2
2V 2V
0
0
0 5 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10
VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts)
Output Characteristics Saturation Characteristics
VDS=
1.6 40V 500
1.4
1.2 20V 400 VDS=25V
1.0
10V 300
0.8
0.6 200
0.4
100
0.2
0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts)
Transfer Characteristics Transconductance v gate-source voltage
500 100
400 80
VDS=25V
300 60
Ciss
200 40
100 20
Coss
0 Crss
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 10 20 30 40 50
ID- Drain Current (Amps) VDS-Drain Source Voltage (Volts)
Transconductance v drain current Capacitance v drain-source voltage
Drain Current (Amps)
Drain Current (Amps)
D(On)
I D(On)
I
Drain Current (Amps)
ID(On) -Transconductance (mS) fsg
C-Capacitance (pF)
-Transconductance (mS)
fs
g
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## **N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 ā€“ MARCH 94** ## FEATURES - 200 Volt VDS - R =10ā„¦ DS(on) - Low threshold ## APPLICATIONS - Telephone handsets ## **ZVNL120A** **==> picture [103 x 92] intentionally omitted <==** **----- Start of picture text -----**
D G
S
E-Line
TO92 Compatible
**----- End of picture text -----**
## **ZVNL120A** ## **TYPICAL CHARACTERISTICS** **==> picture [362 x 481] intentionally omitted <==** **----- Start of picture text -----**
VGS= VGS=
1.6 10V 1.0 10V
8V 8V
1.4 6V 6V
0.8
1.2
5V 4V
1.0 0.6
0.8
4V
0.6 0.4
3V
0.4
3V 0.2
0.2
2V 2V
0
0
0 5 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10
VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts)
Output Characteristics Saturation Characteristics
VDS=
1.6 40V 500
1.4
1.2 20V 400 VDS=25V
1.0
10V 300
0.8
0.6 200
0.4
100
0.2
0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts)
Transfer Characteristics Transconductance v gate-source voltage
500 100
400 80
VDS=25V
300 60
Ciss
200 40
100 20
Coss
0 Crss
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 10 20 30 40 50
ID- Drain Current (Amps) VDS-Drain Source Voltage (Volts)
Transconductance v drain current Capacitance v drain-source voltage
Drain Current (Amps)
Drain Current (Amps)
D(On)
I D(On)
I
Drain Current (Amps)
ID(On) -Transconductance (mS) fsg
C-Capacitance (pF)
-Transconductance (mS)
fs
g
**----- End of picture text -----**
## **N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 ā€“ MARCH 94** ## FEATURES - 200 Volt VDS - R =10ā„¦ DS(on) - Low threshold ## APPLICATIONS - Telephone handsets ## **ZVNL120A** **==> picture [103 x 92] intentionally omitted <==** **----- Start of picture text -----**
D G
S
E-Line
TO92 Compatible
**----- End of picture text -----**
## **ZVNL120A** ## **TYPICAL CHARACTERISTICS** **==> picture [343 x 322] intentionally omitted <==** **----- Start of picture text -----**
VGS=2V 3V 4V
16 100
14 VDS=
ID= 700mA 50V
12
100V
10 150V 5V
8 10 10V
6
4
2
0
1
0 0.4 0.8 1.2 1.6 2.0 2.4 10 100 1000
Q-Charge (nC) ID-Drain Current (mA)
Gate charge v gate-source voltage On-resistance v drain current
100 2.4
2.2
VGS=5V
2.0 ID=250mA
1.8
10 I1AD= 1.61.4 ID=VGS=125mA3V
0.5A 1.2
0.1A 1.0 VGS=VDS
ID=1mA
0.8
0.6
1 0.4
1 10 20 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS-Gate Source Voltage (Volts) Tj-Junction Temperature (CĀ°)
On-resistance vs gate-source voltage Normalised RDS(on) and VGS(th) vs Temperature
Gate Threshold Voltage VGS(th)
DS(on)
Drain-Source Resistance R
)ā„¦
-Drain Source On Resistance (
DS(on)
R
GS(th)
and V
DS(on)
Normalised R
**----- End of picture text -----**
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