# Power MOSFET, N Channel, 100 V, 900 mA, 0.65 ohm, TO-226AA, Through Hole ![Product image](https://novapart.co/image/farnell:9524991/) **URL**: https://novapart.co/products/ZVN4310A/power-mosfet-n-channel-100-v-900-ma-065-ohm-to **SKU**: ZVN4310A **Manufacturer**: DIODES INC. **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.5900 **Stock**: 10+ ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:900mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.65ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Diss ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (27-Jun-2024) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 850mW | | Transistor Mounting | Through Hole | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-226AA | | Drain Source Voltage Vds | 100V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 900mA | | Drain Source On State Resistance | 0.65ohm | | Gate Source Threshold Voltage Max | 3V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:9524991/) ## **ZVN4310A** ## **ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).** |PARAMETER|SYMBOL|MIN.|TYP.|MAX.|UNIT|CONDITIONS.| |---|---|---|---|---|---|---| |Input Capacitance (2)|Ciss|||350|pF|| |Common Source|Coss|||140|pF|VDS=25 V, VGS=0V, f=1MHz| |Output Capacitance||||||| |(2)||||||| |Reverse Transfer|Crss|||30|pF|| |Capacitance (2)
Turn-On Delay Time
(2)(3)
Rise Time (2)(3)
Turn-Off Delay Time
(2)(3)
Fall Time (2)(3)|td(on)
tr
td(off)
tf|||8
25
30
16|ns
ns
ns
ns|VDD≈25V, VGEN=10V, ID=3A
RGS=50Ω| ## **N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94** FEATURES - 100 Volt VDS - R = 0.5Ω DS(on) - Spice model available **==> picture [153 x 9] intentionally omitted <==** **----- Start of picture text -----**
ABSOLUTE MAXIMUM RATINGS.
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## **ZVN4310A** **==> picture [103 x 92] intentionally omitted <==** **----- Start of picture text -----**
D G
S
E-Line
TO92 Compatible
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## **ZVN4310A** ## **ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).** |PARAMETER|SYMBOL|MIN.|TYP.|MAX.|UNIT|CONDITIONS.| |---|---|---|---|---|---|---| |Input Capacitance (2)|Ciss|||350|pF|| |Common Source|Coss|||140|pF|VDS=25 V, VGS=0V, f=1MHz| |Output Capacitance||||||| |(2)||||||| |Reverse Transfer|Crss|||30|pF|| |Capacitance (2)
Turn-On Delay Time
(2)(3)
Rise Time (2)(3)
Turn-Off Delay Time
(2)(3)
Fall Time (2)(3)|td(on)
tr
td(off)
tf|||8
25
30
16|ns
ns
ns
ns|VDD≈25V, VGEN=10V, ID=3A
RGS=50Ω| ## **N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94** FEATURES - 100 Volt VDS - R = 0.5Ω DS(on) - Spice model available **==> picture [153 x 9] intentionally omitted <==** **----- Start of picture text -----**
ABSOLUTE MAXIMUM RATINGS.
**----- End of picture text -----**
## **ZVN4310A** **==> picture [103 x 92] intentionally omitted <==** **----- Start of picture text -----**
D G
S
E-Line
TO92 Compatible
**----- End of picture text -----**
## **ZVN4310A** ## **TYPICAL CHARACTERISTICS** **==> picture [362 x 482] intentionally omitted <==** **----- Start of picture text -----**
VGS= VGS=3V 4V 5V 6V 8V 10V
20V 10V 10
12V 9V 8V 7V
10
9
8
6V
7
6
1.0
5 5V
4
3
4V
2
1
3V
0 0.1
0 1 2 3 4 5 6 7 8 9 10 0.1 1 10 100
VDS - Drain Source Voltage (Volts) ID-Drain Current (Amps)
Saturation Characteristics On-resistance v drain current
2.6
5
2.4
2.22.0 VID=GS=3.3A10V 4 VDS=10V
1.8 3
1.6
1.4 2
1.2 VGS=VDS
1.0 I D=1mA 1
0.8
0.6 0
-50 -25 0 25 50 75 100 125 150 175 200 225 0 2 4 6 8 10 12 14 16 18 20
Tj-Junction Temperature (°C) ID(on)- Drain Current (Amps)
Normalised RDS(on) and VGS(th) v Temperature Transconductance v drain current
VDD=
16 10V
500 20V
14 ID=3A 50V
400 12 100V
10
300
8
200 Ciss 6
4
100
Coss 2
0 Crss 0
0 10 20 30 40 50
0 1 2 3 4 5 6 7 8 9 10 11 12
VDS-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage Gate charge v gate-source voltage
Gate Threshold Voltage V
GS(TH)
DS(on)
Drain-Source Resistance R
)(Ω
-Drain Source On Resistance
DS(on)
R
- Drain Current (Amps)
D
I
GS(th)
and V
DS(on)
-Transconductance (S)
fs
g
Normalised R
C-Capacitance (pF)
-Gate Source Voltage (Volts)
GS
V
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