# Power MOSFET, N Channel, 60 V, 1.1 A, 0.22 ohm, E-Line, Through Hole ![Product image](https://novapart.co/image/farnell:3943947/) **URL**: https://novapart.co/products/ZVN4306AV/power-mosfet-n-channel-60-v-11-a-022-ohm-e-line **SKU**: ZVN4306AV **Manufacturer**: DIODES INC. **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.6060 **Stock**: 1000+ **Lead Time**: 78 days (indicative) ## Specifications | Parameter | Value | |---|---| | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 850mW | | Transistor Mounting | Through Hole | | Rds(On) Test Voltage | 10V | | Transistor Case Style | E-Line | | Drain Source Voltage Vds | 60V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 1.1A | | Drain Source On State Resistance | 0.22ohm | | Gate Source Threshold Voltage Max | 3V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3943947/) ## **N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET** ## **ISSUE 1 – FEBRUARY 95** ## **ZVN4306AV** — ## FEATURES - 60 Volt VDS - R = 0.33 Ω DS(on) - Repetitive Avalanche Rating ## APPLICATIONS - Solenoids / relay drivers for automotive - Stepper Motor Drivers - DC-DC convertors **==> picture [63 x 46] intentionally omitted <==** **----- Start of picture text -----**
DGS
E-Line
TO92 Compatible
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## **ABSOLUTE MAXIMUM RATINGS.** |**ABSOLUTE MAXIMUM RATINGS.**|||| |---|---|---|---| |PARAMETER|SYMBOL|VALUE|UNIT| |Drain-Source Voltage|VDS|60|V| |Continuous Drain Current at Tamb=25°C|ID|1.1|A| |Practical Continuous Drain Current at
Tamb=25°C|IDP|1.3|A| |Pulsed Drain Current|IDM|15|A| |Gate Source Voltage|VGS|±20|V| |Power Dissipation at Tamb=25°C|Ptot|850|mW| |Practical Power Dissipation at Tamb=25°C*|Ptotp|1.13|W| |Avalanche Current-Repetitive|IAR|1|A| |Avalanche Energy-Repetitive|EAR|25|mJ| |Operating and Storage Temperature Range|Tj:Tstg|-55 to +150|°C| *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ## **ZVN4306AV** ## **ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).** |PARAMETER|SYMBOL|MIN.|TYP.|MAX.|UNIT|CONDITIONS.| |---|---|---|---|---|---|---| |Drain-Source
Breakdown Voltage|BVDSS|60|||V|ID=1mA, VGS=0V| |Gate-Source
Threshold Voltage|VGS(th)|1.3||3|V|ID=1mA, VDS= VGS| |Gate-Body Leakage|IGSS|||100|nA|VGS=± 20V, VDS=0V| |Zero Gate Voltage
Drain Current|IDSS|||10
100|µA
µA|VDS=60V, VGS=0
VDS=48V, VGS=0V, T=125°C(2)| |On-State Drain
Current(1)|ID(on)|12|||A|VDS=10V, VGS=10V| |Static Drain-Source
On-State Resistance
(1)|RDS(on)||0.22
0.32|0.33
0.45|Ω
Ω|VGS=10V,ID=3A
VGS=5V, ID=1.5A| |Forward
Transconductance
(1)(2)|gfs|700|||mS|VDS=25V,ID=3A| |Input Capacitance (2)|Ciss|||350|pF|| |Common Source
Output Capacitance (2)|Coss|||140|pF|VDS=25 V, VGS=0V, f=1MHz| |Reverse Transfer
Capacitance (2)|Crss|||30|pF|| |Turn-On Delay Time
(2)(3)|td(on)|||8|ns|V≈25VV10VI3A| |Rise Time (2)(3)|tr|||25|ns|DD , GEN=, D=| |Turn-Off Delay Time
(2)(3)|td(off)|||30|ns|| |Fall Time (2)(3)|tf|||16|ns|| (1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2% (2) Sample test. (3) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator ## **ZVN4306AV** ## **TYPICAL CHARACTERISTICS** **==> picture [362 x 482] intentionally omitted <==** **----- Start of picture text -----**
VGS=
20V 12V 10V 9V 8V VGS=3V 3.5V 5V 6V
12 10
11 7V
10
9
8
6V
7
6 1.0
5 8V
5V
4 10V
3
2 4V
1 3.5V
0 3V
0.1
0 1 2 3 4 5 6 7 8 9 10 0.1 1 10 100
V DS - Drain Source Voltage (Volts) I D- Drain Current (Amps)
Saturation Characteristics On-resistance v drain current
2.6
2.4 VGS=10V 5
2.2 ID=3A
4
2.0
1.8 3
1.6
VDS=10V
1.4 2
1.2 VGS=VDS
1.0 ID=1mA 1
0.8
0.6 Gate Threshold Voltage VGS(TH) 0
-50 -25 0 25 50 75 100 125 150 175 200 225 0 2 4 6 8 10 12 14 16 18 20
Tj-Junction Temperature (°C) ID(on)- Drain Current (Amps )
Normalised RDS(on) and VGS(th) v Temperature Transconductance v drain current
VDD=
500 16 20V
40V
14 ID=3A 60V
400
12
300 10
8
200 Ciss
6
100 4
Coss
Crss 2
0
0
0 10 20 30 40 50 60 70 80
0 1 2 3 4 5 6 7 8 9 10 11 12
VDS-Drain Source Voltage (Volts) Q-Charge (nC)
Capacitance v drain-source voltage Gate charge v gate-source voltage
DS(on)
Drain-Source Resistance R
)( Ω
-Drain Source On Resistance
DS(on)
R
- Drain Current (Amps)
D
I
GS(th)
and V
DS(on)
-Transconductance (S)
Normalised R fsg
C-Capacitance (pF)
-Gate Source Voltage (Volts)
GS
V
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BE 1.0 S 150 D.C. ;
=5- 0.75 = eS)re t1 D=t1 P
100 tP
3 On 2
9a 0.50 %,G a2)£ D=0.6
@ % 9
fa)ra Cn” 2al 50 /
0.25 D=0.2
a3 = D=0.1
=5 -40 -20 0 20 40 60 80 100 120 140 160 F2 00.0001 0.001Single PulseD=0.05 0.01 0.1 1 10 100
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