# Power MOSFET, N Channel, 60 V, 1 A, 1 ohm, SOT-223, Surface Mount ![Product image](https://novapart.co/image/farnell:9526366/) **URL**: https://novapart.co/products/ZVN4206G/power-mosfet-n-channel-60-v-1-a-ohm-sot-223 **SKU**: ZVN4206G **Manufacturer**: DIODES INC. **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.3530 **Stock**: 1000+ **Lead Time**: 78 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd: ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 2W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | SOT-223 | | Drain Source Voltage Vds | 60V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 1A | | Drain Source On State Resistance | 1ohm | | Gate Source Threshold Voltage Max | 3V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:9526366/) ## **SOT223 N-CHANNEL ENHANCEMENT** ## **ZVN4206G** ## **ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).** |PARAMETER|SYMBOL|MIN.|MAX.|UNIT|CONDITIONS.| |---|---|---|---|---|---| |Drain-Source Breakdown Voltage|BVDSS|60||V|ID=1mA, VGS=0V| |Gate-Source Threshold Voltage|VGS(th)|1.3|3|V|ID=1mA, VDS= VGS| |Gate-Body Leakage|IGSS||100|nA|VGS=±20V, VDS=0V| |Zero Gate Voltage Drain Current|IDSS||10|µA|VDS=60V, VGS=0V| ||||100|µA|VDS=48V, VGS=0V, T=125°C(2)| |On-State Drain Current (1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)|ID(on)
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf|3
300|1
1.5
100
60
20
8
12
12
15|A
Ω
Ω
mS
pF
pF
pF
ns
ns
ns
ns|VDS=25V, VGS=10V
VGS=10V, ID=1.5A
VGS=5V, ID=0.5A
VDS=25V,ID=1.5A
VDS=25V, VGS=0V, f=1MHz
VDD≈25V, ID=1.5A, VGEN=10V| ## **MODE VERTICAL DMOS FET** ## **ISSUE 3 - JANUARY 1996** % FEATURES - Compact geometry - Fast switching speeds - No secondary breakdown and Excellent temperature stability - High input impedance and low current drive - Ease of parralleling ## **ZVN4206G** **==> picture [78 x 66] intentionally omitted <==** **----- Start of picture text -----**
D
S
D
G
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## **SOT223 N-CHANNEL ENHANCEMENT** ## **ZVN4206G** ## **ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).** |PARAMETER|SYMBOL|MIN.|MAX.|UNIT|CONDITIONS.| |---|---|---|---|---|---| |Drain-Source Breakdown Voltage|BVDSS|60||V|ID=1mA, VGS=0V| |Gate-Source Threshold Voltage|VGS(th)|1.3|3|V|ID=1mA, VDS= VGS| |Gate-Body Leakage|IGSS||100|nA|VGS=±20V, VDS=0V| |Zero Gate Voltage Drain Current|IDSS||10|µA|VDS=60V, VGS=0V| ||||100|µA|VDS=48V, VGS=0V, T=125°C(2)| |On-State Drain Current (1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)|ID(on)
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf|3
300|1
1.5
100
60
20
8
12
12
15|A
Ω
Ω
mS
pF
pF
pF
ns
ns
ns
ns|VDS=25V, VGS=10V
VGS=10V, ID=1.5A
VGS=5V, ID=0.5A
VDS=25V,ID=1.5A
VDS=25V, VGS=0V, f=1MHz
VDD≈25V, ID=1.5A, VGEN=10V| ## **MODE VERTICAL DMOS FET** ## **ISSUE 3 - JANUARY 1996** % FEATURES - Compact geometry - Fast switching speeds - No secondary breakdown and Excellent temperature stability - High input impedance and low current drive - Ease of parralleling ## **ZVN4206G** **==> picture [78 x 66] intentionally omitted <==** **----- Start of picture text -----**
D
S
D
G
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## **ZVN4206G** ## **TYPICAL CHARACTERISTICS** **==> picture [348 x 462] intentionally omitted <==** **----- Start of picture text -----**
10 VGS= 10 VGS=
20V 20V
8 16V14V 8 14V16V
12V 12V
6 10V 6 10V
9V 9V
4 8V 4 8V
7V 7V
2 5V6V 2 5V6V
4.5V 4.5V
4V 4V
0 3.5V 0 3.5V
0 10 20 30 40 50 2 4 6 8 10
VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts)
Output Characteristics Saturation Characteristics
10
6
8 VDS=10V
6 4
4
ID= 2
2 3A
1.5A
0.5A 0
0
0 2 4 6 8 10 0 2 4 6 8 10
VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts)
Voltage Saturation Characteristics Transfer Characteristics
VGS=3.5V 4.5V 6V 8V 10V
10 2.6
2.4 VGS=10V
2.2 ID=1.5A
2.0
14V 1.8
1.0 1.6
1.4
20V 1.2 VGS=VDS
1.0 ID=1mA
0.8
0.1 0.6 -50 -25 0 25 50 75 100 125 150 175 200 225
0.1 1.0 10
ID-Drain Current (Amps) Tj-Junction Temperature (°C)
On-resistance v drain current Normalised RDS(on) and VGS(th) v Temperature
Gate Threshold Voltage VGS(TH)
DS(on)
Drain-Source Resistance R
Voltage (Volts)
Drain Source
DS-
V
)(Ω
-Drain Source On Resistance
DS(on)
R
- Drain Current (Amps)
D - Drain Current (Amps)
I D
I
- Drain Current (Amps)
D
I
GS(th)
and V
DS(on)
Normalised R
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## **ZVN4206G** ## **TYPICAL CHARACTERISTICS** **==> picture [347 x 310] intentionally omitted <==** **----- Start of picture text -----**
1000 1000
900 900
800 800
700 700
600 VDS=10V 600 VDS=10V
500 500
400 400
300 300
200 200
100 100
0 0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts)
Transconductance v drain current Transconductance v gate-source voltage
VDS=
20V 40V 60V
16
200
ID=1.5A
14
160 12
120 10
8
80 6
Ciss
40 4
Coss
2
0 Crss
0
0 10 20 30 40 50 60 70 80 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VDS-Drain Source Voltage (Volts) Q-Charge (nC)
Capacitance v drain-source voltage Gate charge v gate-source voltage
-Transconductance (mS) -Transconductance (mS)
fs fs
g g
C-Capacitance (pF)
-Gate Source Voltage (Volts)
GS
V
**----- End of picture text -----**
## **ZVN4206G** ## **TYPICAL CHARACTERISTICS** **==> picture [348 x 462] intentionally omitted <==** **----- Start of picture text -----**
10 VGS= 10 VGS=
20V 20V
8 16V14V 8 14V16V
12V 12V
6 10V 6 10V
9V 9V
4 8V 4 8V
7V 7V
2 5V6V 2 5V6V
4.5V 4.5V
4V 4V
0 3.5V 0 3.5V
0 10 20 30 40 50 2 4 6 8 10
VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts)
Output Characteristics Saturation Characteristics
10
6
8 VDS=10V
6 4
4
ID= 2
2 3A
1.5A
0.5A 0
0
0 2 4 6 8 10 0 2 4 6 8 10
VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts)
Voltage Saturation Characteristics Transfer Characteristics
VGS=3.5V 4.5V 6V 8V 10V
10 2.6
2.4 VGS=10V
2.2 ID=1.5A
2.0
14V 1.8
1.0 1.6
1.4
20V 1.2 VGS=VDS
1.0 ID=1mA
0.8
0.1 0.6 -50 -25 0 25 50 75 100 125 150 175 200 225
0.1 1.0 10
ID-Drain Current (Amps) Tj-Junction Temperature (°C)
On-resistance v drain current Normalised RDS(on) and VGS(th) v Temperature
Gate Threshold Voltage VGS(TH)
DS(on)
Drain-Source Resistance R
Voltage (Volts)
Drain Source
DS-
V
)(Ω
-Drain Source On Resistance
DS(on)
R
- Drain Current (Amps)
D - Drain Current (Amps)
I D
I
- Drain Current (Amps)
D
I
GS(th)
and V
DS(on)
Normalised R
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## **ZVN4206G** ## **TYPICAL CHARACTERISTICS** **==> picture [347 x 310] intentionally omitted <==** **----- Start of picture text -----**
1000 1000
900 900
800 800
700 700
600 VDS=10V 600 VDS=10V
500 500
400 400
300 300
200 200
100 100
0 0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts)
Transconductance v drain current Transconductance v gate-source voltage
VDS=
20V 40V 60V
16
200
ID=1.5A
14
160 12
120 10
8
80 6
Ciss
40 4
Coss
2
0 Crss
0
0 10 20 30 40 50 60 70 80 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VDS-Drain Source Voltage (Volts) Q-Charge (nC)
Capacitance v drain-source voltage Gate charge v gate-source voltage
-Transconductance (mS) -Transconductance (mS)
fs fs
g g
C-Capacitance (pF)
-Gate Source Voltage (Volts)
GS
V
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